Boron Diffusion Coefficient in Diamond

1995 ◽  
Vol 416 ◽  
Author(s):  
T. Sung ◽  
G. Popovici ◽  
M. A. Prelas ◽  
R. G. Wilson
Keyword(s):  
Diffusion Coefficients ◽  
Boron Concentration ◽  
Secondary Ion Mass Spectrometry ◽  
Hydrogen Atmosphere ◽  
Concentration Profiles ◽  
Boron Diffusion ◽  
Boron Powder ◽  
Secondary Ion ◽  
Dopant Source ◽  
Made In

ABSTRACTA study of boron diffusion into diamond lattice was performed. Diffusion was made in hydrogen atmosphere at 30 torr. Two type IIa diamonds were heated at 1200 and 1400 °C for 20 hours and 5 minutes, respectively. Boron powder was used as a dopant source. The boron concentration profiles of both samples were measured by secondary ion mass spectrometry. Based on Fick's law, the diffusion coefficients were computed.

Diffusion of Boron in Silicon and Silicon-Germanium in the Presence of Carbon

2005 ◽  
Vol 237-240 ◽  
pp. 998-1003
Author(s):  
Mudith S.A. Karunaratne ◽  
Janet M. Bonar ◽  
Jing Zhang ◽  
Peter Ashburn ◽  
Arthur F.W. Willoughby
Keyword(s):  
Mass Spectrometry ◽  
Diffusion Coefficients ◽  
Silicon Germanium ◽  
Molecular Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Concentration Profiles ◽  
Boron Diffusion ◽  
Coated Surfaces ◽  
Secondary Ion ◽  
Strained Sige

Boron diffusion in Si and strained SiGe with and without C was studied. Using gassource molecular beam epitaxy (MBE), B containing epitaxial layers of: (i) Si, (ii) Si containing 0.1% C, (iii) SiGe with 11% Ge and (iv) SiGe with 11% Ge and with a 0.1% C, were grown on substrates. These samples were then rapid thermal annealed (RTA) at 940, 1000 and 1050°C in an O2 ambient. Self-interstitial-, vacancy- and non-injection conditions were achieved by annealing bare, Si3N4- and Si3N4+SiO2-coated surfaces, respectively. Concentration profiles of B, Ge and C were obtained using Secondary-Ion Mass Spectrometry (SIMS). Diffusion coefficients of B in each type of matrix were extracted by computer simulation. We find that B diffusivity is reduced by both Ge and C. The suppression due to C is much larger. In all materials, a substantial enhancement of B diffusion was observed due to self-interstitial injection compared to non-injection conditions. These results indicate that B diffusion in all four types of layers is mediated primarily by interstitialcy type defects.

Study of BF2 ion implantation into crystalline silicon : Influence of fluorine on boron diffusion

2004 ◽  
Vol 810 ◽  
Author(s):  
Lilya Ihaddadene-Lecoq ◽  
Jerome Marcon ◽  
Kaouther Ketata
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Secondary Ion Mass Spectrometry ◽  
Crystalline Silicon ◽  
Low Energy ◽  
Concentration Profiles ◽  
Boron Diffusion ◽  
Boron Difluoride ◽  
Secondary Ion ◽  
Trap Interstitial

ABSTRACTWe have investigated and modeled the diffusion of boron implanted into crystalline silicon in the form of boron difluoride BF2+. Low energy BF2+ 1×1015 cm−2 implantations at 2.0keV were characterized using Secondary Ion Mass Spectrometry (SIMS) in order to measure dopant profiles. RTA was carried out at 950°C, 1000°C, 1050°C and 1100°C during 10s, 20s, 30s and 60s. The results show that concentration profiles for BF2+ implant are shallower than those for a direct B+ ion implantation. This could be attributed to the presence of fluorine which trap interstitial Si so that interstitial silicon supersaturation is low near the surface.

Behaviour of Implanted Hydrogen in Gallium Phosphide Single Crystals

1988 ◽  
Vol 144 ◽  
Author(s):  
J. M. Zavada ◽  
R. G. Wilson ◽  
S. W. Novak ◽  
S. J. Pearton ◽  
A. R. Von Neida
Keyword(s):  
Mass Spectrometry ◽  
Single Crystals ◽  
Diffusion Coefficients ◽  
Gallium Phosphide ◽  
Secondary Ion Mass Spectrometry ◽  
Furnace Annealing ◽  
Higher Temperature ◽  
Redistribution Of Hydrogen ◽  
Secondary Ion ◽  
Post Implantation

ABSTRACTIn this paper we report on the depth distributions of implanted hydrogen in GaP crystals and the subsequent changes produced by post- implantation furnace annealing. A sulfur doped n+ GaP wafer has been implanted with 333 keV protons to a fluence of 5E15/cm+2. A similar wafer was implanted with 350 keV deuterons to the same fluence. Portions of each wafer have been furnace annealed at temperatures up to 500°C. The implanted hydrogen and the dopant S atoms were then depth profiled using secondary ion mass spectrometry (SIMS). The measurements show that the redistribution of hydrogen begins with annealing at about 300°C and proceeds both towards the surface and deeper into the substrate. The overall behavior is similar to that found previously for hydrogen in GaAs. However, in GaP crystals this redistribution begins at a higher temperature and proceeds more slowly in the implanted region. Based on the SIMS profiles, diffusion coefficients for hydrogen migrating into substrate are obtained.

Determination of the Distribution of Ion Implantation Boron in Silicon

2000 ◽  
Vol 650 ◽  
Author(s):  
Te-Sheng Wang ◽  
A.G. Cullis ◽  
E.J.H. Collart ◽  
A.J. Murrell ◽  
M.A. Foad
Keyword(s):  
Electron Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Low Energy ◽  
Concentration Profiles ◽  
Impurity Profile ◽  
Transmission Electron ◽  
Device Applications ◽  
P Type ◽  
Secondary Ion

ABSTRACTBoron is the most important p-type dopant in Si and it is essential that, especially for low energy implantation, both as-implanted B distributions and those produced by annealing should be characterized in very great detail to obtain the required process control for advanced device applications. While secondary ion mass spectrometry (SIMS) is ordinarily employed for this purpose, in the present studies implant concentration profiles have been determined by direct B imaging with approximately nanometer depth and lateral resolution using energy-filtered imaging in the transmission electron microscopy. The as-implanted B impurity profile is correlated with theoretical expectations: differences with respect to the results of SIMS measurements are discussed. Changes in the B distribution and clustering that occur after annealing of the implanted layers are also described.

Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor Deposition

2006 ◽  
Vol 527-529 ◽  
pp. 625-628
Author(s):  
Hun Jae Chung ◽  
Sung Wook Huh ◽  
A.Y. Polyakov ◽  
Saurav Nigam ◽  
Qiang Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Boron Concentration ◽  
Secondary Ion Mass Spectrometry ◽  
Nitrogen Concentration ◽  
Chemical Vapor ◽  
Bulk Crystals ◽  
Hall Effect Measurements ◽  
Site Competition ◽  
Secondary Ion

Undoped 6H- and 4H-SiC crystals were grown by Halide Chemical Vapor Deposition (HCVD). Concentrations of impurities were measured by various methods including secondary-ion-mass spectrometry (SIMS). With increasing C/Si ratio, nitrogen concentration decreased and boron concentration increased as expected for the site-competition effect. Hall-effect measurements on 6H-SiC crystals showed that with the increase of C/Si ratio from 0.06 to 0.7, the Fermi level was shifted from Ec-0.14 eV (nitrogen donors) to Ev+0.6 eV (B-related deep centers). Crystals grown with C/Si > 0.36 showed high resistivities between 1053 and 1010 4cm at room temperature. The high resistivities are attributed to close values of the nitrogen and boron concentrations and compensation by deep defects present in low densities.

Diffusion of ion-implanted Boron and Silicon in Germanium

2004 ◽  
Vol 809 ◽  
Author(s):  
Suresh Uppal ◽  
A. F. W. Willoughby ◽  
J. M. Bonar ◽  
N. E. B. cowern ◽  
R. J. H. Morris ◽  
...  
Keyword(s):  
Activation Energy ◽  
High Resolution ◽  
Diffusion Coefficients ◽  
Doping Concentration ◽  
Diffusion Mechanism ◽  
Concentration Profiles ◽  
Furnace Annealing ◽  
Temperature Range ◽  
Self Diffusion ◽  
Secondary Ion

ABSTRACTThe diffusion of B and Si in Ge is studied using implantation doping. Concentration profiles after furnace annealing in the temperature range 800–900 °C were obtained using high resolution secondary ion mass spectroscopy (SIMS). Diffusion coefficients are calculated by fitting the annealed profiles. For B, we obtain diRusivity values which are two orders of magnitude slower than previously reported in literature. An activation energy of 4.65(±0.3) eV is calculated for B diffusion in Ge. The results suggest that diffusion mechanism other than vacancy should be considered for B diffusion in Ge. For Si diffusion in Ge, the diffusivity values calculated in the temperature range 750–875 °C are in agreement with previous work. The activation energy of 3.2(±0.3) eV for Si diffusion is closer to that for Ge self-diffusion which suggests that Si diffusion in Ge occurs via the same mechanism as in Ge self-diffusion.

Lateral Boron Distribution in Polycrystalline SiC Source Materials

2013 ◽  
Vol 740-742 ◽  
pp. 397-400 ◽  
Author(s):  
Margareta K. Linnarsson ◽  
Michl Kaiser ◽  
Rickard Liljedahl ◽  
Valdas Jokubavicius ◽  
Yi Yu Ou ◽  
...  
Keyword(s):  
Boron Concentration ◽  
Secondary Ion Mass Spectrometry ◽  
Nitrogen Concentration ◽  
Vapor Transport ◽  
White Leds ◽  
Depth Profiles ◽  
Boron Distribution ◽  
Secondary Ion ◽  
Source Materials ◽  
Co Doped

Polycrystalline SiC containing boron and nitrogen are used in growth of fluorescent SiC for white LEDs. Two types of doped polycrystalline SiC have been studied in detail with secondary ion mass spectrometry: sintered SiC and poly-SiC prepared by sublimation in a physical vapor transport setup. The materials are co-doped materials with nitrogen and boron to a concentration of 1x1018 cm-3 and 1x1019 cm-3, respectively. Depth profiles as well as ion images have been recorded. According to ocular inspection, the analyzed poly-SiC consists mainly of 4H-SiC and 6H-SiC grains. In these grains, the boron concentration is higher and the nitrogen concentration is lower in the 6H-SiC compared to the 4H-SiC polytype. No inter-diffusion between grains is observed.

Grain Boundary Diffusion in Cation-Doped Superplastic 3Y-TZP

2006 ◽  
Vol 45 ◽  
pp. 1626-1631
Author(s):  
Marek Boniecki ◽  
Rafał Jakieła ◽  
Zdzislaw Librant ◽  
Wladyslaw Wesolowski ◽  
Danuta Dabrowska ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Thin Films ◽  
Grain Boundary ◽  
Diffusion Coefficients ◽  
Boundary Diffusion ◽  
Secondary Ion Mass Spectrometry ◽  
Tetragonal Zirconia ◽  
Grain Boundary Diffusion ◽  
Depth Profiles ◽  
Secondary Ion

The superplastic flow in tetragonal zirconia polycrystals stabilised 3mol% Y2O3 (3YTZP) is strongly affected by the dopant cations, which segregate at the grain boundary. It is proposed that this flow is controlled by grain boundary diffusion of Zr4+ ions and therefore the dopant cations should change the grain boundary diffusion. In order to prove this thesis the measurements of grain boundary diffusion coefficients were made using Hf4+ ions as tracer. Zirconia samples were doped with 1mol% of Al2O3, SiO2, MgO, MgAl2O4, GeO2 and TiO2. The tracer was deposited on the surface of the zirconia specimens by placing several drops of hafnium nitrate and then drying at 373 K. In this way, thin films of HfO 2 were obtained. The samples were heated in the range 1553 – 1773 K for 1 to 24 h. The concentration versus depth profiles were measured using secondary ion mass spectrometry (SIMS). Calculated hence grain boundary diffusion coefficients were several times bigger for doped samples than for pure 3Y-TZP samples.

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