Rapid Themal Annealing of Shallow. Diffused Contact Regions in GaAs

1985 ◽  
Vol 52 ◽  
Author(s):  
N. J. Kepler ◽  
N. W. Cheung ◽  
P. K. Chu
Keyword(s):  
Thin Film ◽  
Rapid Thermal Annealing ◽  
High Intensity ◽  
Ohmic Contacts ◽  
Diffusion Profile ◽  
Furnace Annealing ◽  
Conventional Furnace ◽  
Specific Contact ◽  
Heavily Doped ◽  
Conventional Furnace Annealing

ABSTRACTRapid thermal annealing (RTA) is used to form shallow and heavily-doped contact regions in undoped, semi-insulating GaAs. These layers are formed by using a high-intensity tungstenhalogen lamp to diffuse germanium and selenium from a deposited GeSe thin-film. RTA reduces surface degradation and permits better control of the diffusion profile than conventional furnace annealing. Optimal 20-second RTA occurs above a diffusion threshold at 950°C but below the failure of the SiO2 encapsulant at 1100°C. The n+ regions created have peak impurity concentrations over 1020/cm3 at depths under 750 Å with sheet resistances less than 60 Ω/▩. Non-alloyed ohmic contacts exhibit specific contact resistivites of 2.2 × 10−4 Ω · cm−2.

Rapid Thermal Annealing of Ion Implanted GaAs and InP

1983 ◽  
Vol 23 ◽  
Author(s):  
K.V. Vaidyanathan ◽  
H.L. Dunlap
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Intensity ◽  
Annealing Process ◽  
Electrical Activation ◽  
High Fluence ◽  
Furnace Annealing ◽  
Conventional Furnace ◽  
Conventional Furnace Annealing ◽  
Ion Implanted

ABSTRACTThis paper discusses the properties of high intensity lamp-annealed silicon or beryllium-implanted GaAs and InP samples. We find this annealing process can result in efficient activation of dopants. Conventional furnace annealing at the same temperature does not result in increased electrical activation of the dopants. High fluence silicon implants can be activated in anneal times as short as 2 seconds, while low fluence silicon implants require more extended annealing. Activation of low fluence implants in GaAs depends strongly on the properties of the bulk semiinsulating material.

omparisons of Silicide Formation by Rapid Thermal Annealing and Conventional Furnace Annealing

1987 ◽  
Vol 92 ◽  
Author(s):  
E. Ma ◽  
M. Natan ◽  
B.S. Lim ◽  
M-A. Nicolet
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
Cross Sectional ◽  
Conventional Furnace ◽  
Diffusion Controlled ◽  
Conventional Furnace Annealing ◽  
Kinetics Of

ABSTRACTSilicide formation induced by rapid thermal annealing (RTA) and conventional furnace annealing (CFA) in bilayers of sequentially deposited films of amorphous silicon and polycrystalline Co or Ni is studied with RBS, X-ray diffraction and TEM. Particular attention is paid to the reliability of the RTA temperature measurements in the study of the growth kinetics of the first interfacial compound, Co2Si and Ni2Si, for both RTA and CFA. It is found that the same diffusion-controlled kinetics applies for the silicide formation by RTA in argon and CFA in vacuum with a common activation energy of 2.1+0.2eV for Co2Si and 1.3+0.2eV for Ni Si. Co and Ni atoms are the dominant diffusing species; during silicide formation by both RTA and CFA. The microstructures of the Ni-silicide formed by the two annealing techniques, however, differs considerably from each other, as revealed by cross-sectional TEM studies.

Quantum State in Solid-Phase Crystallization of a-Si:H by FA

2010 ◽  
Vol 44-47 ◽  
pp. 4154-4156
Author(s):  
Rui Min Jin ◽  
Ding Zhen Li ◽  
Lan Li Chen ◽  
Xiang Ju Han ◽  
Jing Xiao Lu
Keyword(s):  
Thin Film ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Quantum States ◽  
Solid Phase Crystallization ◽  
Furnace Annealing ◽  
Conventional Furnace ◽  
Different Temperatures ◽  
Conventional Furnace Annealing ◽  
Electronic Microscope

Amorphous silicon films prepared by PECVD on glass substrate has been crystallized by conventional furnace annealing (FA) at different temperatures. From the Raman spectra and scanning electronic microscope (SEM), it is found that the thin film grain size present quantum states with annealing temperature.

Rapid Thermal Annealing of High Energy Si Implants Into GaAs

1987 ◽  
Vol 92 ◽  
Author(s):  
Ronald N. Legge ◽  
Wayne M. Paulson
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ohmic Contacts ◽  
Low Dose ◽  
High Energy ◽  
Low Noise ◽  
Furnace Annealing ◽  
Conventional Furnace ◽  
Capacitance Voltage ◽  
Lec Gaas

ABSTRACTRapid thermal annealing (RTA) technology offers potential advantages for the processing of ion implanted GaAs. High energy implants of 300 keV or above are used for power MESFETs as well as in the ohmic contacts for low noise devices. The purpose of this paper is to investigate and characterize the RTA of Si implants into LEC GaAs using implant energies of 300keV and above, and a range of doses from 2.3 ×1012 to 3×1014 /cm2. The wafers were analyzed using capacitance-voltage and Hall measurements. Factors which cause variability in pinchoff voltage are identified and an RTA process comparable to conventional furnace annealing is presented for low dose implants. Superior implant activation is observed for higher dose implants through the use of higher annealing temperature.

scholarly journals Microwave Annealing of Ion Implanted 6H-SiC

1996 ◽  
Vol 430 ◽  
Author(s):  
J. A. Gardner ◽  
M. V. Rao ◽  
Y. L. Tian ◽  
O. W. Holland ◽  
G. Kelner ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Rapid Thermal Annealing ◽  
Photoluminescence Spectra ◽  
Furnace Annealing ◽  
Microwave Annealing ◽  
Conventional Furnace ◽  
Good Lattice ◽  
Lattice Damage ◽  
Conventional Furnace Annealing ◽  
Van Der Pauw

AbstractMicrowave rapid thermal annealing has been utilized to remove the lattice damage caused by nitrogen (N) ion-implantation as well as to activate the dopant in 6H-SiC. Samples were annealed at temperatures as high as 1400 °C, for 10 min. Van der Pauw Hall measurements indicate an implant activation of 36%, which is similar to the value obtained for the conventional furnace annealing at 1600 °C. Good lattice quality restoration was observed in the Rutherford backscattering and photoluminescence spectra.

Scalable nanoparticle assembly on carbon nanotubes using flash-induced dewetting

2016 ◽  
Vol 51 (9) ◽  
pp. 1299-1305
Author(s):  
Taylor Espich ◽  
Eduardo Salcedo ◽  
Ameya Kulkarni ◽  
Daniel Sung Choi ◽  
Jong Eun Ryu
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
The Other ◽  
Nanoparticle Assembly ◽  
Furnace Annealing ◽  
P Values ◽  
Au Nps ◽  
Conventional Furnace ◽  
Macro Scale ◽  
Conventional Furnace Annealing

Nanoparticle assembly through a novel photothermal dewetting was demonstrated on a macro-scale carbon nanotube (CNT) film. Intense pulsed Xe-light (IPL) was applied to transform a gold (Au) thin-film on CNT into nanoparticles (NPs). Au films measuring 3, 6, and 9 nm were completely dewetted by 10, 20, and 35 J/cm2 of IPL intensities, respectively. The means of NP diameters after dewetting were 7.25 nm (standard deviation, σ = 2.23 nm), 13.07 nm ( σ = 2.38 nm), and 21.02 nm ( σ = 5.86 nm) for the 3, 6, and 9 nm of Au films, respectively. On the other hand, the means of Au NPs formed by furnace annealing were 13.16 nm ( σ = 1.78 nm) and 20.98 nm ( σ = 15.60 nm) for 6 and 9 nm of Au films, respectively. The 6 and 9 nm of Au films on CNTs were annealed in a furnace at 300 and 400℃, respectively. The distributions of NPs induced by IPL were not significantly different from the result of conventional furnace annealing ( p values = 0.45 and 0.96 for 6 and 9 nm Au films, respectively). Finally, thermodynamic stability of IPL dewetted NPs was evaluated by comparing the samples treated with multiple IPL up to five times and with extended thermal annealing up to 10 h.

Si Ion Implantation in InAlAs/InGaAs Heterostructures

1989 ◽  
Vol 147 ◽  
Author(s):  
B. Descouts ◽  
N. Duhamel ◽  
E. V. K. Rao ◽  
Y. Gao ◽  
J. P. Praseuth
Keyword(s):  
Contact Resistivity ◽  
Electrical Parameters ◽  
Furnace Annealing ◽  
Conventional Furnace ◽  
Activation Efficiency ◽  
Specific Contact ◽  
Conventional Furnace Annealing ◽  
Specific Contact Resistivity ◽  
Good Homogeneity ◽  
Si Ion Implantation

AbstractSi29 implants have been performed in InGaAs and InAlAs single layers as well as in InGaAs/InAlAs heterostructures. Nearly 100% activation has been obtained in InGaAs after conventional furnace annealing or rapid thermal annealing. On the other hand, a low activation efficiency (30%) has been observed in InAlAs. A preliminary photoluminescence measurements study shows that an appreciable fraction of Si exists in the form of complex centers. Hall effect and specific contact resistivity maps carried out in the heterostructures indicate a very good homogeneity of the electrical parameters over a 4 cm2 sample and give a satisfactory value of the specific contact resistivity (10−7 ω.cm2)

Rapid Thermal Annealing of III–V Compound Materials

1983 ◽  
Vol 23 ◽  
Author(s):  
M. Kuzuhara ◽  
H. Kohzu ◽  
Y. Takayama
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Dose ◽  
Furnace Annealing ◽  
Promising Alternative ◽  
Gaas Mesfet ◽  
Annealing Conditions ◽  
Conventional Furnace ◽  
Conventional Furnace Annealing ◽  
Compound Materials

ABSTRACTRapid thermal process utilizing radiation from halogen lamps has been used to post-anneal ion-implanted GaAs. Annealing conditions for Si implants in GaAs are discussed from the view point of applying this technique to GaAs MESFET fabrication. Also, the properties of S and Mg implants in GaAs followed by rapid thermal annealing are comparatively studied with the results after conventional furnace annealing. High electrical activation and minimized implant diffusion for both low and high dose implants are the principal features of this technique. The fabricated MESFET showed much higher transconductance without any anomalous characteristics, indicating this technique to be a promising alternative to conventional furnace annealing.

Diffusion of A Deposited GeSe Film in GaAs using Ion-Beam Mixing

1985 ◽  
Vol 45 ◽  
Author(s):  
N. J. Kepler ◽  
N. W. Cheung
Keyword(s):  
Integrated Circuits ◽  
Ohmic Contacts ◽  
Ion Beam ◽  
Threshold Temperature ◽  
Electrical Characteristics ◽  
Electrical Measurements ◽  
Furnace Annealing ◽  
Ion Beam Mixing ◽  
Heavily Doped ◽  
And Diffusion

ABSTRACTIon-beam mixing and rapid thermal annealing (RTA) techniques are used to form shallow and heavily-doped n+ layers in undoped GaAs. RTA reduces surface degradation and improves crystalline quality compared to lengthy thermal cycles, although furnace annealing producesidentical electrical characteristics. Ion-beam mixing has only a small effect on the diffusion of a deposited GeSe film, because the damage created by implantation is repaired during RTA before significant diffusion occurs. We define a threshold temperature representing the onset of significant electrical activation and/or diffusion, and propose a model relating the annealing, activation, and diffusion temperatures for the GeSe/GaAs system. RBS. SIMS, and electrical measurements show that extremely shallow layers with a sheet resistivity as low as 1480/El can be formed in GaAs by diffusion from a GeSe source. This technique has potential application to the formation of shallow ohmic contacts for GaAs integrated circuits.

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