The Nucleation of Crystalline TiSi2 Phases from Amorphous TiSix Layers and Interfacial Layers
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AbstractSilicide reaction between co-deposited TiSix layers and Si was studied. It was shown that an amorphous TiSix layer, with x − 0.5–1, deposited between amorphous Si and the Ti film led to a significant reduction in the observed C49→C54 TiSis transformation temperature. Amorphous TiSix layers generated by the pre-deposition of Ti and pre-annealing also enhanced the nucleation of the C54-TiSi2 phase. The efficacy of the interfacial TiSix layer was demonstrated on undoped and heavily doped n- and p-type α-Si, but was found to be absent on single crystal Si. Possible mechanisms of these phenomena are discussed.