In-Situ Stm Studies on the Electrodeposition of Ultrathin Nickel Films

1996 ◽  
Vol 451 ◽  
Author(s):  
O. M. Magnussen ◽  
F. A. Möller ◽  
A. Lachenwitzer ◽  
R. J. Behm
Keyword(s):  
Specific Surface ◽  
Single Crystals ◽  
Complex Potential ◽  
Growth Process ◽  
Nucleation And Growth ◽  
Layer Growth ◽  
Layer By Layer ◽  
Surface Sites ◽  
In Situ Stm

ABSTRACTAn in-situ STM study of the initial stages of Ni electrodeposition on Au and Cu single-crystals is presented. On reconstructed Au(111) a complex, potential-dependent nucleation and growth process is found, involving selective Ni island formation at specific surface sites and growth of two types (compact and needle-like) of Ni monolayer islands. At higher coverages (1 ML ≤ θ ≤ 5 ML) an almost perfect layer-by-layer growth of a metallic Ni(111)-film was observed. Considerably rougher films were found on Au(100) and Cu(100).

Oblique-incidence Reflectivity Difference (OI-RD) and Leed Studies of Adsorption and Growth of Xe on Nb(110)

2003 ◽  
Vol 780 ◽  
Author(s):  
P. Thomas ◽  
E. Nabighian ◽  
M.C. Bartelt ◽  
C.Y. Fong ◽  
X.D. Zhu
Keyword(s):  
Transition Layer ◽  
Layer Growth ◽  
Flow Mode ◽  
Layer By Layer ◽  
Zeroth Order ◽  
Step Flow ◽  
Low Energy Electron Diffraction ◽  
Oriented Film ◽  
Low Energy Electron

AbstractWe studied adsorption, growth and desorption of Xe on Nb(110) using an in-situ obliqueincidence reflectivity difference (OI-RD) technique and low energy electron diffraction (LEED) from 32 K to 100 K. The results show that Xe grows a (111)-oriented film after a transition layer is formed on Nb(110). The transition layer consists of three layers. The first two layers are disordered with Xe-Xe separation significantly larger than the bulk value. The third monolayer forms a close packed (111) structure on top of the tensile-strained double layer and serves as a template for subsequent homoepitaxy. The adsorption of the first and the second layers are zeroth order with sticking coefficient close to one. Growth of the Xe(111) film on the transition layer proceeds in a step flow mode from 54K to 40K. At 40K, an incomplete layer-by-layer growth is observed while below 35K the growth proceeds in a multilayer mode.

Atomic Layer and Unit-Cell Layer Growth of (Ca,Sr)CuO2 and Bi2Sr2Can-1CunO2n+4 Thin Films by Laser Molecular Bean Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
Masaki Kanai ◽  
Tomoji Kawai ◽  
Takuya Matsumoto ◽  
Shichio Kawai
Keyword(s):  
Thin Films ◽  
Diffraction Pattern ◽  
Cell Layer ◽  
Atomic Layer ◽  
High Energy ◽  
Layer Growth ◽  
Unit Cell ◽  
Layer By Layer ◽  
Diffraction Intensity

ABSTRACTThin films of (Ca,Sr)CuO2 and Bi2Sr2Can-1CunO2n+4 are formed by laser molecular beam epitaxy with in-situ reflection high energy electron diffraction observation. The diffraction pattern shows that these materials are formed with layer-by-layer growth. The change of the diffraction intensity as well as the analysis of the total diffraction pattern makes It possible to control the grown of the atomic layer or the unit-cell layer.

Recrystallization of AA1050 Studied by 3DXRD

2006 ◽  
Vol 519-521 ◽  
pp. 1569-1578
Author(s):  
Dorte Juul Jensen
Keyword(s):  
Single Crystals ◽  
High Energy ◽  
Nucleation And Growth ◽  
X Rays ◽  
X Ray Diffraction ◽  
Orientation Relationships ◽  
X Ray ◽  
3 Dimensional ◽  
Kinetics Of

By 3 dimensional X-ray diffraction (3DXRD) using high energy X-rays from synchrotron sources it is possible to study in-situ the nucleation and growth during recrystallization. In this paper it is described and discussed how 3DXRD can supplement EBSP measurements of nucleation and growth. Three types of studies are considered: i) orientation relationships between nuclei and parent deformed matrix, ii) recrystallization kinetics of individual bulk grains and iii) filming of growing grains in deformed single crystals.

Monitoring of Silicon Nano-Crystal Dots Formation on SiO2 and on Si3N4 in an UHV-CVD System

2001 ◽  
Vol 704 ◽  
Author(s):  
Takayuki Kawashima ◽  
Supika Mashiro ◽  
Junro Sakai ◽  
Rajesh Rao ◽  
R. Muralidhar ◽  
...  
Keyword(s):  
Growth Process ◽  
Irradiation Time ◽  
Nucleation And Growth ◽  
Si Nanocrystals ◽  
Si Nanocrystal ◽  
Good Repeatability ◽  
Nanocrystal Formation ◽  
Nano Crystal

AbstractApplicability of SPA (Surface Photo Absorption) as an in-situ monitor of Si nanocrystal formation was comparatively studied to a monitoring with pyrometer.Although both SPA and pyrometer provide a signature of the Si nanocrystals nucleation and growth process as a function of irradiation time, SPA was found to be more sensitive to detect formation of desired nanocrystals on both SiO2 and Si3N4 surfaces. By using SPA as an in-situ monitor of nanocrystal formation, good repeatability of both nanocrystals' density and size was obtained on SiO2 and Si3N4 surfaces.

Layer-by-layer growth in solution deposition of monocrystalline lead sulfide thin films on GaAs(111)

2019 ◽  
Vol 3 (8) ◽  
pp. 1538-1544 ◽  
Author(s):  
Tzvi Templeman ◽  
Maayan Perez ◽  
Ofir Friedman ◽  
Ran Eitan Abutbul ◽  
Michael Shandalov ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Sulfide ◽  
Layer Growth ◽  
Layer By Layer ◽  
Solution Deposition

In situ synchrotron GIXD showed layer-by-layer growth in solution deposited monocrystalline thin films of lead sulfide on GaAs(111).

scholarly journals Controlling the growth mode of para-sexiphenyl (6P) on ZnO by partial fluorination

2014 ◽  
Vol 16 (47) ◽  
pp. 26084-26093 ◽  
Author(s):  
M. Sparenberg ◽  
A. Zykov ◽  
P. Beyer ◽  
L. Pithan ◽  
C. Weber ◽  
...  
Keyword(s):  
Growth Process ◽  
Layer Growth ◽  
Phase Coexistence ◽  
Growth Mode ◽  
Layer By Layer

Partial fluorination of para-sexiphenyl significantly alters the growth process on ZnO(101̄0) avoiding the phase coexistence of unsubstituted para-sexiphenyl and leading to smooth layer-by-layer growth.

An In-Situ Oblique-Incidence Optical Reflectance Difference Study of Co Electrodeposition on a Polycrystalline Au(111) Surface

2002 ◽  
Vol 721 ◽  
Author(s):  
J. Gray ◽  
W. Schwarzacher ◽  
X.D. Zhu
Keyword(s):  
Oblique Incidence ◽  
Three Dimensional ◽  
Oscillatory Behavior ◽  
Layer Growth ◽  
Deposition Condition ◽  
Layer By Layer ◽  
Optical Reflectance ◽  
Growth Modes ◽  
Highly Sensitive

AbstractWe studied submonolayer and multilayer deposition of Co on Au(111) using in-situ oblique-incidence optical reflectance difference (OI-RD). We show that the optical technique is highly sensitive and accurate in determining the electrodeposited film thickness and growth mode. We found that the optically determined thickness of the ultrathin Co film is in very good agreement with that deduced from the integration of the anodic current during cyclic voltammetry (CV). From a weak oscillatory behavior of the optical reflectance difference signal, it seems that the growth of electrodeposited Co on Au(111) under pulsed deposition condition proceeds by a combination of three dimensional island and quasi layer-by-layer growth modes.

A compact UHV X-ray diffractometer for studying surfaces and interfaces

1998 ◽  
Vol 5 (3) ◽  
pp. 887-889
Author(s):  
Yoshikazu Fujii ◽  
Takeshi Nakamura ◽  
Mutsumi Kai ◽  
Kentaroh Yoshida
Keyword(s):  
High Vacuum ◽  
Layer Growth ◽  
Ultra High Vacuum ◽  
Layer By Layer ◽  
Crystal Surfaces ◽  
X Ray ◽  
Surfaces And Interfaces ◽  
Optical Table ◽  
Specimen Orientation

A compact ultra-high-vacuum (UHV) X-ray diffractometer for surface glancing X-ray scattering has been constructed. All the equipment, including a rotating-anode source of 18 kW and a UHV specimen chamber, is arranged on one optical table of dimensions 70 × 90 cm. The specimen chamber is 14 cm in diameter and 20 cm high and can be evacuated up to 3 × 10−8 Pa. It is equipped with two Be windows of thicknesses 0.2 and 0.4 mm. Specimen orientation in the vacuum is controlled from the outside. The specimen can be heated up to 773 K. The chamber has two evaporation cells and can be used for in situ observations of growing crystal surfaces. Using this instrument, we observed a mechanically polished Ag surface and successfully made an in situ observation of the layer-by-layer growth of a PbSe(111) surface. The instrument will be useful for preliminary experiments using laboratory sources, prior to final measurements at synchrotron radiation facilities.

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