Inductively Coupled High-Density Plasma-Induced Etch Damage of GaN MESFETs

2000 ◽  
Vol 622 ◽  
Author(s):  
R. J. Shul ◽  
L. Zhang ◽  
A. G. Baca ◽  
C. G. Willison ◽  
J. Han ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Ion Bombardment ◽  
Critical Dimension ◽  
High Plasma ◽  
Substrate Material ◽  
Device Performance ◽  
Inductively Coupled ◽  
Profile Control ◽  
Etch Rates ◽  
Anisotropic Etch

ABSTRACTThe fabrication of a wide variety of GaN-based photonic and electronic devices depends on dry etching, which typically requires ion-assisted removal of the substrate material. Under conditions of both high plasma flux and energetic ion bombardment, GaN etch rates greater than 0.5 νm/min and anisotropic etch profiles are readily achieved in Inductively Coupled Plasma (ICP) etch systems. Unfortunately, under these conditions plasma-induced damage often occurs. Attempts to minimize such damage by reducing the ion energy or increasing the chemical activity in the plasma often result in a loss of etch rate or profile control which can limit dimensional control and reduce the utility of the process for device applications requiring anisotropic etch profiles. It is therefore necessary to develop plasma etch processes which couple anisotropy for critical dimension and sidewall profile control and high etch rates with low-damage for optimum device performance. In this study we report changes in source resistance, reverse breakdown voltage, transconductance, and drain saturation current for GaN MESFET structures exposed to an Ar ICP plasma. In general, device performance was sensitive to ion bombardment energy and ion flux.

scholarly journals High-Density Plasma-Induced Etch Damage of GaN

1999 ◽  
Vol 573 ◽  
Author(s):  
R. J. Shul ◽  
L. Zhang ◽  
A. G. Baca ◽  
C. G. Willison ◽  
J. Han ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Critical Dimension ◽  
Group Iii Nitrides ◽  
High Plasma ◽  
High Density ◽  
Plasma Flux ◽  
Plasma Etch ◽  
Critical Dimensions ◽  
Profile Control ◽  
Density Plasma

ABSTRACTAnisotropic, smooth etching of the group-Ill nitrides has been reported at relatively high rates in high-density plasma etch systems. However, such etch results are often obtained under high dc-bias and/or high plasma flux conditions where plasma induced damage can be significant. Despite the fact that the group-III nitrides have higher bonding energies than more conventional III–V compounds, plasma-induced etch damage is still a concern. Attempts to minimize such damage by reducing the ion energy or increasing the chemical activity in the plasma often result in a loss of etch rate or anisotropy which significantly limits critical dimensions and reduces the utility of the process for device applications requiring vertical etch profiles. It is therefore necessary to develop plasma etch processes which couple anisotropy for critical dimension and sidewall profile control and high etch rates with low-damage for optimum device performance. In this study we report changes in sheet resistance and contact resistance for n- and p-type GaN samples exposed to an Ar inductively coupled plasma (ICP). In general, plasma-induced damage was more sensitive to ion bombardment energies as compared to plasma flux. In addition, p-GaN was typically more sensitive to plasma-induced damage as compared to n-GaN.

Comparison Of Dry-Etch Techniques For Gan, Inn, And Ain

1997 ◽  
Vol 483 ◽  
Author(s):  
R. J. Shul ◽  
G. A. Vawter ◽  
C. G. Willison ◽  
M. M. Bridges ◽  
J. W. Lee ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
High Plasma ◽  
Group Iii ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Etch Rates ◽  
Group Iii Nitride ◽  
Dry Etch

AbstractFabrication of group-III nitride devices relies on the ability to pattern features to depths ranging from ∼1000 Å to > 5 μm with anisotropic profiles, smooth morphologies, selective etching of one material over another, and a low degree of plasma-induced damage. In this study, GaN etch rates and etch profiles are compared using reactive ion etch (RIE), reactive ion beam etching (RIBE), electron cyclotron resonance (ECR), and inductively coupled plasma (ICP) etch systems. RIE yielded the slowest etch rates and sloped etch profiles despite dc-biases > −900 V. ECR and ICP etching yielded the highest rates with anisotropic profiles due to their high plasma flux and the ability to control ion energies independently of plasma density. RIBE etch results also showed anisotropic profiles with slower etch rates than either ECR or ICP possibly due to lower ion flux. InN and AIN etch characteristics are also compared using ICP and RIBE.

scholarly journals Synthesis of carbon nanowalls from a single-source metal-organic precursor

2018 ◽  
Vol 9 ◽  
pp. 1895-1905 ◽  
Author(s):  
André Giese ◽  
Sebastian Schipporeit ◽  
Volker Buck ◽  
Nicolas Wöhrl
Keyword(s):  
Surface Diffusion ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Single Source ◽  
Organic Precursor ◽  
Inductively Coupled ◽  
Deposition Parameters ◽  
Metal Organic ◽  
Carbon Nanowalls

In this work, the deposition of carbon nanowalls (CNWs) by inductively coupled plasma enhanced chemical vapor deposition (ICP-PECVD) is investigated. The CNWs are electrically conducting and show a large specific surface area, which is a key characteristic to make them interesting for sensors, catalytic applications or energy-storage systems. It was recently discovered that CNW films can be deposited by the use of the single-source metal-organic precursor aluminium acetylacetonate. This precursor is relatively unknown in combination with the ICP-PECVD deposition method in literature and, thus, based on our previous publication is further investigated in this work to better understand the influence of the various deposition parameters on the growth. Silicon, stainless steel, nickel and copper are used as substrate materials. The CNWs deposited are characterized by scanning electron microscopy (SEM), Raman spectroscopy and Auger electron spectroscopy (AES). The combination of bias voltage, the temperature of the substrate and the substrate material had a strong influence on the morphology of the graphitic carbon nanowall structures. With regard to these results, a first growth model for the deposition of CNWs by ICP-PECVD and aluminium acetylacetonate is proposed. This model explains the formation of four different morphologies (nanorods as well as thorny, straight and curled CNWs) by taking the surface diffusion into account. The surface diffusion depends on the particle energies and the substrate material and thus explains the influence of these parameters.

Low Bias Dry Etching of Sic and Sicn in ICP NF3 Discharges

1998 ◽  
Vol 512 ◽  
Author(s):  
J. J. Wang ◽  
Hyun Cho ◽  
E. S. Lambers ◽  
S. J. Peartont ◽  
M. Ostling ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Ion Flux ◽  
Pattern Transfer ◽  
Plasma Composition ◽  
Source Power ◽  
Ion Energy ◽  
Trade Off ◽  
Inductively Coupled ◽  
Extensive Surface ◽  
Etch Rates

ABSTRACTA parametric study of the etching characteristics of 6H p+ and n+ SiC and thin film SiC0.8N0.2 in Inductively Coupled Plasma NF3/O2 and NF3/Ar discharges has been performed. The etch rates in both chemistries increase monotonically with NF3 percentage and rf chuck power reaching 3500Å·min−1 for SiC and 7500 Å·min−1 for SiCN. The etch rates go through a maximum with increasing ICP source power, which is explained by a trade-off between the increasing ion flux and the decreasing ion energy. The anisotropy of the etched features is also a function of ion flux, ion energy and atomic fluorine neutral concentration. Indium-tinoxide( ITO) masks display relatively good etch selectivity over SiC(maximum of 70:1) while photoresist etches more rapidly than SiC. The surface roughness of SiC is essentially independent of plasma composition for NF3/O2 discharges, while extensive surface degradation occurs for SiCN under high NF3:O2 conditions. The high ion flux available in the ICP tool allows etching even at very low dc self-biases, ≤ −10V, leading to very low damage pattern transfer.

Investigating GaSb(001) Dry Etching by ICP-RIE on a non-Silicon Containing Sample Holder with no Organic Gases

2012 ◽  
Vol 1396 ◽  
Author(s):  
Hamad A. Albrithen ◽  
Gale S. Petrich ◽  
Leslie A. Kolodziejski ◽  
Abdelmajid Salhi ◽  
Abdulrahman A. Almuhanna
Keyword(s):  
Inductively Coupled Plasma ◽  
Silicon Oxide ◽  
Etching Rate ◽  
Sample Holder ◽  
Inductively Coupled ◽  
Solid Films ◽  
Mask Layer ◽  
Organic Gases ◽  
Dry Etch ◽  
Anisotropic Etch

ABSTRACTWe report the dry etch of GaSb(001) by inductively coupled plasma reactive ion etcher. Silicon Oxide, deposited by PECVD, was used as a mask. The oxide layer proved to be almost unaffected compared to the GaSb, when using chlorine compound gases as etchants (Cl2, BCl3, and SiCl4) as well as argon. This provides high selectivity for GaSb to the mask layer. The sample holder has no silicon that may contribute to the etching process. Etching using Cl2 + Ar showed increase in the etching rate as the chlorine ratio increases; however, the process led to grassy surface and chemical like reaction. The use of SiCl4+Cl2+Ar mixture with low chlorine ratio resulted in anisotropic etch with smooth sides. It has been found for this case that the increase of the chlorine ratio led to an increased etching rate as well. The repeat of previously reported result by Swaminathan et al. [Thin Solid Films 516 (2008) 8712.] yet with a sample holder not having silicon, proved the effect of Si-contribution in producing vertical profile etch with smooth surfaces.

Feature Evolution During Sub 100NM Gap-Fill and Etch

2005 ◽  
Author(s):  
Hemant Mungekar ◽  
Young S. Lee ◽  
Shankar Venkataraman
Keyword(s):  
Inductively Coupled Plasma ◽  
Scale Up ◽  
High Plasma ◽  
Inductively Coupled ◽  
Positive Ions ◽  
Aspect Ratios ◽  
High Plasma Density ◽  
Semiconductor Fabrication ◽  
Wafer Size ◽  
Feature Evolution

Inductively coupled plasma (ICP) reactors are being used at low gas pressure (<100mTorr) and high plasma density ([e] > 1013/cm2) processes in semiconductor fabrication. In these reactors plasma is generated by inductively coupled electric field while positive ions are accelerated anisotropically by applying a negative bias RF to the substrate. Semiconductor manufacturers face many challenges as wafer size increases while device geometries decrease. Two key challenges for both process design and electronics processing equipment design are (a) scale up of process from 200mm to 300mm diameter substrate, and (b) deposition and etching features with high aspect ratios. A unified phenomenological model to explain profile evolution trend as a function of aspect ratio for deposition (gap fill) and trench etch using ICP reactors is presented. Trends for feature evolution as a function of pressure for gap fill and trench etch are reviewed and explained. The article emphasizes importance of low pressure for sub-100nm gap-fill and trench-etch applications in ICP processing reactors.

scholarly journals ICP Dry Etching of III-V Nitrides

1997 ◽  
Vol 468 ◽  
Author(s):  
C. B. Vartuli ◽  
J. W. Lee ◽  
J. D. MacKenzie ◽  
S. M. Donovan ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Rf Power ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
Dc Bias ◽  
Etch Rates ◽  
Icp Dry Etching

ABSTRACTInductively coupled plasma etching of GaN, AlN, InN, InGaN and InAlN was investigated in CH4/H2/Ar plasmas as a function of dc bias, and ICP power. The etch rates were generally quite low, as is common for III-nitrides in CH4 based chemistries. The etch rates increased with increasing dc bias. At low rf power (150W), the etch rates increased with increasing ICP power, while at 350W rf power, a peak was found between 500 and 750 W ICP power. The etched surfaces were found to be smooth, while selectivities of etch were ≤ 6 for InN over GaN, AlN, InGaN and InAlN under all conditions.

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