Na Impurity Chemistry in Photovoltaic Cigs thin-Films: An Investigation with Photo- and Auger Electron Spectroscopies

1997 ◽  
Vol 485 ◽  
Author(s):  
D. W. Niles ◽  
K. Ramanathan ◽  
J. Granata ◽  
F. Hasoon ◽  
R. Noufi ◽  
...  
Keyword(s):  
Thin Films ◽  
Auger Electron ◽  
Chemical Nature ◽  
Atomic Percent ◽  
Device Performance ◽  
Type Conductivity ◽  
X Ray ◽  
P Type

AbstractThe incorporation of Na into Cu(Inl-xGax)Se2 thin-films is known to lead to an improvement in device performance. The authors use X-ray photoelectron and Auger electron spectroscopies to determine the chemical nature of Na in Cu(Inl-xGax)Se2 thin-films. The Na concentration is determined to be ∼ 0.1 atomic percent in the bulk of Cu(In1-xGax)Se2 thin-films. The Na is chemically bonded to Se. The authors propose a model invoking the replacement of column III elements by Na during the growth of Cu(Inl-xGax)Se2 thin-films. These Nain and NaGa defects act as acceptor states to increase the p-type conductivity of Cu(In1-xGax)Se2 thin-films.

Synthesis and characterization of Zn100−xLixO and Zn100−x−yLixCuyO thin films for electronic and optoelectronic applications

2019 ◽  
Vol 33 (23) ◽  
pp. 1950257
Author(s):  
R. Afrose ◽  
M. Kamruzzaman ◽  
M. N. H. Liton ◽  
M. A. Helal ◽  
M. K. R. Khan ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Cost Effective ◽  
Optoelectronic Device ◽  
Point Of View ◽  
Chemical Spray Pyrolysis ◽  
Cu Doping ◽  
Type Conductivity ◽  
X Ray ◽  
P Type

p-type conductivity and the modulation of bandgap of ZnO are crucial aspects for realization of optoelectronic devices’ applications. The Li and Li-Cu could be suitable doping agents for achieving the p-type conductivity and the modulation of bandgap of ZnO. To this point of view, the Zn[Formula: see text]Li[Formula: see text]O (x = 0 to 40 at.%) and Zn[Formula: see text]Li[Formula: see text]Cu[Formula: see text]O (fixed, x = 5 at.%, and y = 0.0 to 10 at.%) thin films were prepared on the microscopic glass substrates at a temperature of 350[Formula: see text]C using cost effective chemical spray pyrolysis (CSP) technique. Field emission scanning electron microscope images show the coexistence of interconnected fibrous and flat grains on the films surface. The grain size changes as function of Li- and Li-Cu concentrations, and at a higher doping granular grains are observed. The successful incorporation of Li and Cu-Li into ZnO crystal is confirmed by X-ray photoelectron spectroscopy (XPS) measurements. The X-ray diffraction (XRD) patterns exhibit hexagonal polycrystalline structure of doped ZnO. However, the crystallinity is deteriorated at higher Li- and Li-Cu doping concentrations. The optical bandgap study exhibits direct transition type and it is red shifted from 3.21 to 2.61 eV and 2.84 to 3.56 eV for Li and Li-Cu doping in ZnO thin films, respectively. The optical conductivity enhances as a result of Li- and Li-Cu doping in ZnO. Therefore, Li- and Li-Cu can effectively be doped to tune bandgap and enhance optical properties of ZnO for electronic and optoelectronic device applications.

scholarly journals P-Type Lithium Niobate Thin Films Fabricated by Nitrogen-Doping

Materials ◽  
2019 ◽  
Vol 12 (5) ◽  
pp. 819 ◽  
Author(s):  
Wencan Li ◽  
Jiao Cui ◽  
Weiwei Wang ◽  
Dahuai Zheng ◽  
Longfei Jia ◽  
...  
Keyword(s):  
Thin Films ◽  
Lithium Niobate ◽  
Photoelectron Spectroscopy ◽  
Hole Concentration ◽  
Nitrogen Plasma ◽  
Si Substrate ◽  
Surface Appearance ◽  
Type Conductivity ◽  
X Ray ◽  
P Type

Nitrogen-doped lithium niobate (LiNbO3:N) thin films were successfully fabricated on a Si-substrate using a nitrogen plasma beam supplied through a radio-frequency plasma apparatus as a dopant source via a pulsed laser deposition (PLD). The films were then characterized using X-Ray Diffraction (XRD) as polycrystalline with the predominant orientations of (012) and (104). The perfect surface appearance of the film was investigated by atomic force microscopy and Hall-effect measurements revealed a rare p-type conductivity in the LiNbO3:N thin film. The hole concentration was 7.31 × 1015 cm−3 with a field-effect mobility of 266 cm2V−1s−1. X-ray Photoelectron Spectroscopy (XPS) indicated that the atom content of nitrogen was 0.87%; N atoms were probably substituted for O sites, which contributed to the p-type conductivity. The realization of p-type LiNbO3:N thin films grown on the Si substrate lead to improvements in the manufacturing of novel optoelectronic devices.

Formation of p-type Cu3BiS3 absorber thin films by annealing chemically deposited Bi2S3–CuS thin films

1997 ◽  
Vol 12 (3) ◽  
pp. 651-656 ◽  
Author(s):  
P. K. Nair ◽  
L. Huang ◽  
M. T. S. Nair ◽  
Hailin Hu ◽  
E. A. Meyers ◽  
...  
Keyword(s):  
Thin Films ◽  
Visible Region ◽  
Atomic Diffusion ◽  
Optical Coatings ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cell Structures ◽  
Potential Applications ◽  
Xrd Patterns ◽  
P Type

Formation of the ternary compound Cu3BiS3 during annealing of chemically deposited CuS (∼0.3 μm) films on Bi2S3 film (∼0.1 μm on glass substrate) is reported. The interfacial atomic diffusion leading to the formation of the compound during the annealing is indicated in x-ray photoelectron depth profile spectra of the films. The formation of Cu3BiS3 (Wittichenite, JCPDS 9-488) is confirmed by the x-ray diffraction (XRD) patterns. The films are optically absorbing in the entire visible region (absorption coefficient 4 × 104 cm−1 at 2.48 eV or 0.50 μm) and are p-type with electrical conductivity of 102−103 Ω−1 cm−1. Potential applications of these films as optical coatings in the control of solar energy transmittance through glazings and as a p-type absorber film in solar cell structures are indicated.

Energy band engineering and controlled p‐type conductivity of CuAlO2 thin films by nonisovalent Cu‐O alloying

2012 ◽  
Vol 100 (6) ◽  
pp. 062102 ◽  
Author(s):  
Z. Q. Yao ◽  
B. He ◽  
L. Zhang ◽  
C. Q. Zhuang ◽  
T. W. Ng ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Band ◽  
Type Conductivity ◽  
Band Engineering ◽  
P Type

The effect of sulfur on the electrical properties of S and N co-doped ZnO thin films: experiment and first-principles calculations

2015 ◽  
Vol 17 (26) ◽  
pp. 16705-16708 ◽  
Author(s):  
Wenzhe Niu ◽  
Hongbin Xu ◽  
Yanmin Guo ◽  
Yaguang Li ◽  
Zhizhen Ye ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
First Principles ◽  
Zno Thin Films ◽  
First Principles Calculations ◽  
Type Conductivity ◽  
Doped Zno ◽  
P Type ◽  
Co Doped

The S dopants in S–N co-doped ZnO contribute to easier doping and p-type conductivity, as concluded by experiment and calculations.

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