Synthesis and characterization of Zn100−xLixO and Zn100−x−yLixCuyO thin films for electronic and optoelectronic applications

2019 ◽  
Vol 33 (23) ◽  
pp. 1950257
Author(s):  
R. Afrose ◽  
M. Kamruzzaman ◽  
M. N. H. Liton ◽  
M. A. Helal ◽  
M. K. R. Khan ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Cost Effective ◽  
Optoelectronic Device ◽  
Point Of View ◽  
Chemical Spray Pyrolysis ◽  
Cu Doping ◽  
Type Conductivity ◽  
X Ray ◽  
P Type

p-type conductivity and the modulation of bandgap of ZnO are crucial aspects for realization of optoelectronic devices’ applications. The Li and Li-Cu could be suitable doping agents for achieving the p-type conductivity and the modulation of bandgap of ZnO. To this point of view, the Zn[Formula: see text]Li[Formula: see text]O (x = 0 to 40 at.%) and Zn[Formula: see text]Li[Formula: see text]Cu[Formula: see text]O (fixed, x = 5 at.%, and y = 0.0 to 10 at.%) thin films were prepared on the microscopic glass substrates at a temperature of 350[Formula: see text]C using cost effective chemical spray pyrolysis (CSP) technique. Field emission scanning electron microscope images show the coexistence of interconnected fibrous and flat grains on the films surface. The grain size changes as function of Li- and Li-Cu concentrations, and at a higher doping granular grains are observed. The successful incorporation of Li and Cu-Li into ZnO crystal is confirmed by X-ray photoelectron spectroscopy (XPS) measurements. The X-ray diffraction (XRD) patterns exhibit hexagonal polycrystalline structure of doped ZnO. However, the crystallinity is deteriorated at higher Li- and Li-Cu doping concentrations. The optical bandgap study exhibits direct transition type and it is red shifted from 3.21 to 2.61 eV and 2.84 to 3.56 eV for Li and Li-Cu doping in ZnO thin films, respectively. The optical conductivity enhances as a result of Li- and Li-Cu doping in ZnO. Therefore, Li- and Li-Cu can effectively be doped to tune bandgap and enhance optical properties of ZnO for electronic and optoelectronic device applications.

scholarly journals P-Type Lithium Niobate Thin Films Fabricated by Nitrogen-Doping

Materials ◽  
2019 ◽  
Vol 12 (5) ◽  
pp. 819 ◽  
Author(s):  
Wencan Li ◽  
Jiao Cui ◽  
Weiwei Wang ◽  
Dahuai Zheng ◽  
Longfei Jia ◽  
...  
Keyword(s):  
Thin Films ◽  
Lithium Niobate ◽  
Photoelectron Spectroscopy ◽  
Hole Concentration ◽  
Nitrogen Plasma ◽  
Si Substrate ◽  
Surface Appearance ◽  
Type Conductivity ◽  
X Ray ◽  
P Type

Nitrogen-doped lithium niobate (LiNbO3:N) thin films were successfully fabricated on a Si-substrate using a nitrogen plasma beam supplied through a radio-frequency plasma apparatus as a dopant source via a pulsed laser deposition (PLD). The films were then characterized using X-Ray Diffraction (XRD) as polycrystalline with the predominant orientations of (012) and (104). The perfect surface appearance of the film was investigated by atomic force microscopy and Hall-effect measurements revealed a rare p-type conductivity in the LiNbO3:N thin film. The hole concentration was 7.31 × 1015 cm−3 with a field-effect mobility of 266 cm2V−1s−1. X-ray Photoelectron Spectroscopy (XPS) indicated that the atom content of nitrogen was 0.87%; N atoms were probably substituted for O sites, which contributed to the p-type conductivity. The realization of p-type LiNbO3:N thin films grown on the Si substrate lead to improvements in the manufacturing of novel optoelectronic devices.

Use of anti-solvent to enhance thermoelectric response of hybrid-halide perovskite thin films

2022 ◽  
Author(s):  
Shrikant SAINI ◽  
Izuki Matsumoto ◽  
Sakura Kishishita ◽  
Ajay Kumar Baranwal ◽  
Tomohide Yabuki ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Cost Effective ◽  
Performance Tuning ◽  
Charge Carrier Density ◽  
X Ray ◽  
Thermoelectric Energy Harvesting ◽  
Halide Perovskite

Abstract Hybrid halide perovskite has been recently focused on thermoelectric energy harvesting due to the cost-effective fabrication approach and ultra-low thermal conductivity. To achieve high performance, tuning of electrical conductivity is a key parameter that is influenced by grain boundary scattering and charge carrier density. The fabrication process allows tuning these parameters. We report the use of anti-solvent to enhance the thermoelectric performance of lead-free hybrid halide perovskite, CH3NH3SnI3, thin films. Thin films with anti-solvent show higher connectivity in grains and higher Sn+4 oxidation states which results in enhancing the value of electrical conductivity. Thin films were prepared by a cost-effective wet process. Structural and chemical characterizations were performed using x-ray diffraction, scanning electron microscope, and x-ray photoelectron spectroscopy. The value of electrical conductivity and the Seebeck coefficient were measured near room temperature. The high value of power factor (1.55 µW/m.K2 at 320 K) was achieved for thin films treated with anti-solvent.

scholarly journals X-ray Photoelectron Spectroscopy (XPS) Analysis of Undoped ZnO and ZnO:Er Thin Films

2015 ◽  
Vol 16 (1) ◽  
pp. 13
Author(s):  
Iwan Sugihartono ◽  
Esmar Budi ◽  
Agus Setyo Budi
Keyword(s):  
Thin Films ◽  
Binding Energy ◽  
Photoelectron Spectroscopy ◽  
Zno Thin Films ◽  
Xps Analysis ◽  
X Ray ◽  
Si Substrates ◽  
Ultrasonic Spray ◽  
P Type

Undoped ZnO and ZnO:Er  thin films were deposited on p-type Si substrates by ultrasonic spray pyrolisis (USP). Undoped and ZnO:Er thin films have been analyzed by using X-ray Photoelectron Spectroscopy (XPS). The results show that the XPS spectrum has two Er peak at ∼157 eV and ∼168 eV. The XPS Zn 2p spectrum of undoped ZnO and ZnO:Er thin films have binding energy for Zn 2p3/2 (~ 1021 eV) and Zn 2p1/2 (~1045eV) were found no shift in binding energy after the incorporation of Er. Meanwhile, after Er incorporates into ZnO, the O 1s spectrum is composed two peak of binding energy (BE) at ~530.5eV and the shoulder about 532.5 eV.Keywords: ZnO thin films, ZnO:Er, XPS, binding energy

scholarly journals Synthesis & characterization of nanostructure VO2 thin film

2021 ◽  
Vol 2070 (1) ◽  
pp. 012098
Author(s):  
P K Ojha ◽  
S K Mishra
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Vanadium Dioxide ◽  
Sol Gel ◽  
Cost Effective ◽  
Metallic Phase ◽  
Strongly Correlated ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sol Gel Process

Abstract Vanadium dioxides are strongly correlated systems which undergo an insulator-metal transition (IMT) from a low-temperature semiconducting phase to a high-temperature metallic phase. Among them, Vanadium dioxide (VO2) undergoes IMT close to room temperature, accompanied by a structural transition resulting change of several orders of magnitude in the electrical and optical properties. Here, we present the synthesis of VO2 by sol-gel process which employs cost-effective precursors to synthesize pure phase of VO2 thin films. The synthesized thin films were characterized using an X-ray diffraction (XRD) to confirm phase purity and high resolution scanning electron microscope (HR-SEM) to study the crystallite and particle size for the synthesized films. The film’s surface was analyzed by X-ray photoelectron spectroscopy (XPS) to determine the valence state and chemical composition of vanadium dioxide.

scholarly journals Influence of Nd and Ce doping on the structural, optical and electrical properties of V2O5 thin films

2019 ◽  
Vol 14 (30) ◽  
pp. 73-82
Author(s):  
I. K. Jassim
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis Technique ◽  
Chemical Spray Pyrolysis ◽  
X Ray Diffraction ◽  
Transition Band ◽  
X Ray ◽  
Chemical Spray ◽  
V2o5 Thin Films ◽  
P Type ◽  
Nano Grains

Nano-structural of vanadium pentoxide (V2O5) thin films weredeposited by chemical spray pyrolysis technique (CSPT). Nd and Cedoped vanadium oxide films were prepared, adding Neodymiumchloride (NdCl3) and ceric sulfate (Ce(SO4)2) of 3% in separatesolution. These precursor solutions were used to deposit un-dopedV2O5 and doped with Nd and Ce films on the p-type Si (111) andglass substrate at 250°C. The structural, optical and electricalproperties were investigated. The X-ray diffraction study revealed apolycrystalline nature of the orthorhombic structure with thepreferred orientation of (010) with nano-grains. Atomic forcemicroscopy (AFM) was used to characterize the morphology of thefilms. Un-doped V2O5 and doped with 3% concentration of Nd andCe films have direct allowed transition band gap. The mechanisms ofdc-conductivity of un-doped V2O5 and doped with Nd and Ce filmsat the range 303 K to 473 K have been discussed.

X-ray photoelectron spectroscopy study of Al- and N- co-doped p-type ZnO thin films

2009 ◽  
Vol 311 (8) ◽  
pp. 2341-2344 ◽  
Author(s):  
G.D. Yuan ◽  
Z.Z. Ye ◽  
J.Y. Huang ◽  
Z.P. Zhu ◽  
C.L. Perkins ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Zno Thin Films ◽  
Spectroscopy Study ◽  
X Ray ◽  
P Type ◽  
Co Doped

scholarly journals Titanium-Doped P-Type WO3 Thin Films for Liquefied Petroleum Gas Detection

Nanomaterials ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 727 ◽  
Author(s):  
Yuzhenghan He ◽  
Xiaoyan Shi ◽  
Kyle Chen ◽  
Xiaohong Yang ◽  
Jun Chen
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Hole Concentration ◽  
Liquefied Petroleum Gas ◽  
Sem Images ◽  
X Ray ◽  
Glass Substrates ◽  
P Type ◽  
Wo3 Thin Films

Gas sensors are an important part of smart homes in the era of the Internet of Things. In this work, we studied Ti-doped P-type WO3 thin films for liquefied petroleum gas (LPG) sensors. Ti-doped tungsten oxide films were deposited on glass substrates by direct current reactive magnetron sputtering from a W-Ti alloy target at room temperature. After annealing at 450 °C in N2 ambient for 60 min, p-type Ti-doped WO3 was achieved for the first time. The measurement of the room temperature Hall-effect shows that the film has a resistivity of 5.223 × 103 Ωcm, a hole concentration of 9.227 × 1012 cm−3, and mobility of 1.295 × 102 cm2V−1s−1. X-Ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses reveal that the substitution of W6+ with Ti4+ resulted in p-type conductance. The scanning electron microscope (SEM) images show that the films consist of densely packed nanoparticles. The transmittance of the p-type films is between 72% and 84% in the visible spectra and the optical bandgap is 3.28 eV. The resistance increased when the films were exposed to the reducing gas of liquefied petroleum gas, further confirming the p-type conduction of the films. The p-type films have a quick response and recovery behavior to LPG.

Effects of Erbium alloying on the structural and piezoelectric properties of Aluminum Nitride thin films annealed under extreme thermal conditions

2013 ◽  
Vol 1519 ◽  
Author(s):  
V. Narang ◽  
D. Korakakis
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Thermal Conditions ◽  
Silicon Substrates ◽  
X Ray ◽  
Er Doping ◽  
Sputtering Power ◽  
P Type

ABSTRACTEffects of adding Erbium(Er) to Aluminum Nitride thin films on their structural and piezoelectric are reported along with stability of the films after annealing them at temperatures up to 600° C. The thin films samples were deposited on the (001) p-type silicon substrates by reactive magnetron sputtering, using the Er alloyed Aluminum targets with Er atomic concentrations of 0, 1, 3 and 4% and the magnetron sputtering power of 200 W. The samples were characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). XPS analysis was used to confirm the stoichiometry of AlN phase, Er atomic content and its possible chemical state in the films. Results show that alloying with Er results in higher piezoelectric coefficient d33 as compared to that in Er-free AlN thin films. Structural analysis of the films by XRD shows the shift of (0002) AlN peak to lower 2θ values upon Er doping, indicating the presence of uniform internal compressive stress.

scholarly journals Growth of the Electrodeposited NiX2 (X= Te, Se) Thin Films

2020 ◽  
pp. 55-69
Author(s):  
T. Joseph Sahaya Anand ◽  
Rajes K. M. Rajan ◽  
Md Radzai Said ◽  
Lau Kok Tee
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Compositional Analysis ◽  
Cost Effective ◽  
Xrd Analysis ◽  
Potential Range ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
P Type

Thin films of nickel chalcogenide, NiX2 (X= Te, Se) have been electrosynthesized on indium-tin-oxide (ITO) coated glass substrates. The films were characterized for their structural, morphological and compositional characteristics. Consisting of transition metals and chalcogenides (S, Se and Te), they show promising solar absorbent properties such as semiconducting band gap, well adhesion to substrate and good conversion with better cost-effective. Cyclic voltammetry experiments have been done prior to electrodeposition in order to get the electrodeposition potential range where the observable reduction range is between -0.9-(-1.1) V. Their optical and semiconducting parameters were also analysed in order to determine the suitability of the thin films for photoelectrochemical (PEC) / solar cell applications. Structural analysis via X-ray diffraction (XRD) analysis reveals that the films are polycrystalline in nature. Scanning electron microscope (SEM) studies reveals that the films were adherent to the substrate with uniform and pin-hole free. Compositional analysis via energy dispersive X-ray (EDX) technique confirms the presence of Ni, Te, and Se elements in the films. The optical studies show that the films are of direct bandgap. Results on the semiconductor parameters analysis of the films showed that the nature of the Mott-Schottky plots indicates that the films obtained are of p-type material.

Na Impurity Chemistry in Photovoltaic Cigs thin-Films: An Investigation with Photo- and Auger Electron Spectroscopies

1997 ◽  
Vol 485 ◽  
Author(s):  
D. W. Niles ◽  
K. Ramanathan ◽  
J. Granata ◽  
F. Hasoon ◽  
R. Noufi ◽  
...  
Keyword(s):  
Thin Films ◽  
Auger Electron ◽  
Chemical Nature ◽  
Atomic Percent ◽  
Device Performance ◽  
Type Conductivity ◽  
X Ray ◽  
P Type

AbstractThe incorporation of Na into Cu(Inl-xGax)Se2 thin-films is known to lead to an improvement in device performance. The authors use X-ray photoelectron and Auger electron spectroscopies to determine the chemical nature of Na in Cu(Inl-xGax)Se2 thin-films. The Na concentration is determined to be ∼ 0.1 atomic percent in the bulk of Cu(In1-xGax)Se2 thin-films. The Na is chemically bonded to Se. The authors propose a model invoking the replacement of column III elements by Na during the growth of Cu(Inl-xGax)Se2 thin-films. These Nain and NaGa defects act as acceptor states to increase the p-type conductivity of Cu(In1-xGax)Se2 thin-films.

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