Low Temperature Growth of Crystalline Silicon Thin Films by ECR Plasma CVD

1997 ◽  
Vol 485 ◽  
Author(s):  
Licai Wang ◽  
H S Reehal
Keyword(s):  
Electron Cyclotron Resonance ◽  
Secondary Ion Mass Spectrometry ◽  
Film Growth ◽  
Crystalline Silicon ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Glass Substrates ◽  
Ecr Plasma ◽  
Silicon Thin Films ◽  
Xrd Patterns

AbstractCrystalline silicon films have been deposited on silicon and metal-coated coming 7095 glass substrates at temperatures of 280 ˜ 680°C by electron cyclotron resonance (ECR) plasma assisted chemical vapor deposition (PACVD) using an ultrahigh vacuum chamber and SiH4 as the feedstock. X-ray diffraction (XRD), Raman spectroscopy, Rutherford backscattering (RBS) and secondary ion mass spectrometry (SIMS) have been used to characterize the films. At temperatures of ˜280 °C, the as-grown films are microcrystalline with crystalline fractions between 50–97%. From XRD patterns, randomly oriented crystalline silicon grains were clearly present in the films with the grain sizes estimated to be between 170 – 370Å. As the growth temperature is increased to 470°C, epitaxial growth on silicon is observed at growth rates of 240Å/min without bias or hydrogen plasma treatment before film growth. N-type doping of the layers has been achieved using PH3 as the doping gas and solar cells with ECR grown emitters fabricated on 15μm thick p-type epilayers on p+ substrates.

Post-Deposition Annealing and Hydrogenation of Hot-Wire Amorphous and Microcrystalline Silicon Films

1996 ◽  
Vol 452 ◽  
Author(s):  
J. P. Conde ◽  
P. Brogueira ◽  
V. Chu
Keyword(s):  
Electron Cyclotron Resonance ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Hot Wire ◽  
Microcrystalline Silicon ◽  
Post Deposition Annealing ◽  
Ecr Plasma ◽  
Hydrogen Plasmas ◽  
Post Deposition

AbstractAmorphous and microcrystalline silicon films deposited by hot-wire chemical vapor deposition were submitted to thermal annealing and to RF and electron-cyclotron resonance (ECR) hydrogen plasmas. Although the transport properties of the films did not change after these post-deposition treatments, the power density of a Ar+ laser required to crystallize the amorphous silicon films was significantly lowered by the exposure of the films to a hydrogen plasma. This decrease was dependent on the type of hydrogen plasma used, being the strongest for an ECR plasma with the substrate held at a negative bias, followed by an ECR hydrogen plasma with the substrate electrode grounded, and finally by an RF hydrogen plasma.

Growth of Er Doped si Films by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition

1993 ◽  
Vol 301 ◽  
Author(s):  
Jim L. Rogers ◽  
Walter J. Varhue ◽  
Edward Adams
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Electron Cyclotron ◽  
Plasma Stream ◽  
Ecr Plasma ◽  
Si Films

ABSTRACTThin Si films doped with Er have been grown at low temperature by plasma enhanced chemical vapor deposition. The Er gas source is a sublimed organo-metallic compound fed into the process chamber. High doping concentrations without precipitation are possible because of the low deposition temperatures. The process relies on the beneficial effects of low energy ion bombardment to reduce the growth temperature. The ions as well as reactive chemical species are produced by an electron cyclotron resonance (ECR) plasma stream source. A hydrogen plasma stream is used to perform an in-situ pre-deposition clean to remove oxide from the Si surface. Film crystallinity and impurity concentration are determined by Rutherford backscattering spectrometry.

Effect of RF Negative Bias on the Structure and Performance of Diamond-Like Carbon Films in ECR Plasma

2013 ◽  
Vol 423-426 ◽  
pp. 756-761
Author(s):  
Li Jun Sang ◽  
Qiang Chen ◽  
Zhong Wei Liu ◽  
Zheng Duo Wang
Keyword(s):  
Friction Coefficient ◽  
Electron Cyclotron Resonance ◽  
Crystalline Silicon ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Negative Bias ◽  
Film Property ◽  
Ecr Plasma ◽  
Peak Intensity ◽  
Stretching Vibration

Diamond-like carbon films (DLC) were deposited on single crystalline silicon surface under different RF negative bias in microwave electron cyclotron resonance (ECR) plasma source. The chemical structure and morphology were characterized by Fourier transformation infrared spectroscopy (FTIR) and atomic force microscopy (AFM). The friction coefficient of films was measured to examine the film property later. The results show that the smooth and compact deposited films were typical hydrogenated diamond-like carbon with CHn stretching vibration in 2800-3000cm-1. It is noticed that with the increase of RF bias on the substrate the peak intensity for C-H stretching vibration in spectrum between 2800cm-1~3000cm-1 increased at the beginning and then decreased, which caused the friction coefficient of the film being smaller and then larger in reverse. In 50W RF biased power one can obtain the maximum-CHn peak intensity and the minimum friction coefficient.

Microstructural Analysis of Copper Foil Etched and Annealed in ECR Plasma Reactor

2022 ◽  
Vol 1048 ◽  
pp. 121-129
Author(s):  
Samit Karmakar ◽  
Soumik Kumar Kundu ◽  
Aditya Mukherjee ◽  
Sujit Kumar Bandyopadhyay ◽  
Satyaranjan Bhattacharyya ◽  
...  
Keyword(s):  
Copper Foil ◽  
Electron Cyclotron Resonance ◽  
Plasma Reactor ◽  
Hydrogen Plasma ◽  
Microstructural Analysis ◽  
Chemical Vapour ◽  
Working Pressure ◽  
Ecr Plasma ◽  
Average Grain Size ◽  
Xrd Studies

Microstructural analysis of commercially available cold-rolled polycrystalline copper foil, etched and annealed in an in-house developed Electron Cyclotron Resonance (ECR) Plasma Enhanced Chemical Vapour Deposition (PE-CVD) reactor, have been carried out using x-ray diffraction (XRD) studies. The annealing experiments were carried out under a vacuum environment, keeping the working pressure of the reactor at 50×10-3 mbar, for three different time spans of 30 mins, 45 mins and 1 hour at 823 K (550 °C) and 923 K (650 °C) respectively in presence of hydrogen plasma. The XRD studies reveal the significance of annealing time at two different temperatures for the determination of physical and microstructural parameters such as the average grain size and micro-strain in copper lattice by Williamson-Hall (W-H) method.

tudies on Titanium Nitride Coatings - Effect of Ion Bombardment

2000 ◽  
Vol 647 ◽  
Author(s):  
K. Deenamma Vargheese ◽  
G. Mohan Rao
Keyword(s):  
Titanium Nitride ◽  
Electron Cyclotron Resonance ◽  
Film Growth ◽  
Morphological Changes ◽  
Ion Bombardment ◽  
Ion Flux ◽  
Film Properties ◽  
Ion Energy ◽  
Ecr Plasma ◽  
Plasma Sputtering

AbstractIon bombardment during thin film growth is known to cause structural and morphological changes in the deposited films and thus affecting the film properties. These effects can be due to the variation in the bombarding ion flux or their energy. We have deposited titanium nitride films by two distinctly different methods, viz. Electron Cyclotron Resonance (ECR) plasma sputtering and bias assisted reactive magnetron sputtering. The former represents low energy (typically less than 30 eV) but high density plasma (1011cm−3), whereas, in the latter case the ion energy is controlled by varying the bias to the substrate (typically a few hundred volts) but the ion flux is low (109cm−3). The deposited titanium nitride films are characterized for their structure, grain size, surface roughness and electrical resistivity.

A Study of Nucleation and Growth in MOCVD: The Growth of Thin Films of Alumina

2000 ◽  
Vol 648 ◽  
Author(s):  
M.P. Singh ◽  
S. Mukhopadhayay ◽  
Anjana Devi ◽  
S.A. Shivashankar
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Secondary Ion Mass Spectrometry ◽  
Film Growth ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
Cross Sectional ◽  
Alumina Films ◽  
Pressure Chemical

AbstractWe have studied the nucleation and growth of alumina by metalorganic chemical vapor deposition (MOCVD). The deposition of alumina films was carried out on Si(100) in a horizontal, hot-wall, low pressure chemical vapor deposition (CVD) reactor, using aluminum acetylacetonate{Al(acac)3}as the CVD precursor. We have investigated growth of alumina films as a function of different CVD parameters such as substrate temperature and total reactor pressure during film growth. Films were characterized by optical microscopy, X-ray diffractometry (XRD), scanning electron microscopy (SEM), cross-sectional SEM, and secondary ion mass spectrometry (SIMS) compositional depth profiling. The chemical analysis reveals that the carbon is present throughout the depth of the films.

Hydrogen in Ultralow Temperature SiO2for Nanocrystalline Silicon Thin Film Transistors

2004 ◽  
Vol 814 ◽  
Author(s):  
Alex Kattamis ◽  
I-Chun Cheng ◽  
Steve Allen ◽  
Sigurd Wagner
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Current Density ◽  
Thin Film Transistors ◽  
Secondary Ion Mass Spectrometry ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Film Deposition ◽  
Silicon Thin Film

AbstractNanocrystalline silicon is a candidate material for fabricating thin film transistors with high carrier mobilities on plastic substrates. A major issue in the processing of nanocrystalline silicon thin film transistors (nc-Si:H TFTs) at ultralow temperatures is the quality of the SiO2gate dielectric. SiO2deposited at less than 250°C by radio frequency plasma enhanced chemical vapor deposition (rf-PECVD), and not annealed at high temperature after deposition, exhibits high leakage current and voltage shifts when incorporated into TFT's. Secondary ion mass spectrometry (SIMS) measurements show that the hydrogen concentration (NH) in PECVD oxide deposited at 150°C on crystalline silicon (x-Si) is ∼ 0.8 at. %. This is much higher than in thermal oxides on x-Si, which display concentrations of less than 0.003 at. %. The leakage current density for thermal oxides on x-Si at a bias of 10 V is ∼9×10−6A/cm2whereas for 200°C PECVD oxides on nc-Si:H the current is ∼1×10−4A/cm2. As the temperature of the SiO2deposition is reduced to 150°C the current density rises by up to two orders of magnitude more. The H which is suspected to cause the leakage current across the PECVD oxide originates from the nc-Si:H substrate and the SiH4source gas. We analyzed the 300-nm gate oxide in capacitor structures of Al / SiO2/n+nc-Si:H / Cr / glass, Al / SiO2/ n+nc-Si:H / x-Si, and Al / SiO2/ x-Si. Vacuum annealing the nc-Si:H prior to PECVD of the oxide drives H out of the nc-Si:H film and reduces the amount of H incorporated into the oxide that is deposited on top. SiO2film deposition from SiH4and N2O at high He dilution has a still greater effect on lowering NH. The leakage current at a 10 V bias dropped from ∼1×10−4A/cm2to about ∼2×10−6A/cm2using He dilution at 250°C, and the vacuum anneal of the nc-Si:H lowered it by an additional factor of two. Thus we observe that both the nc-Si:H anneal and the SiO2deposition at high He dilution lessen the gate leakage current.

Large Grained, Low Defect Density Polycrystalline Silicon on Glass Substrates by Large-area Diode Laser Crystallisation

2012 ◽  
Vol 1426 ◽  
pp. 251-256 ◽  
Author(s):  
Bonne Eggleston ◽  
Sergey Varlamov ◽  
Jialiang Huang ◽  
Rhett Evans ◽  
Jonathon Dore ◽  
...  
Keyword(s):  
Diode Laser ◽  
Polycrystalline Silicon ◽  
Crystalline Silicon ◽  
Defect Density ◽  
Open Circuit ◽  
Large Area ◽  
High Quality ◽  
Glass Substrates ◽  
Silicon Thin Films ◽  
Open Circuit Voltages

ABSTRACTA new method to form high quality crystalline silicon thin films on cheap glass substrates is developed using a single pass of a line-focus cw diode laser in air. The laser process results in the formation of large high-quality crystals as they grow laterally in the scan direction – seeded by the previously crystallised region. Grains 10 μm in thickness, up to millimetres in length and hundreds of microns in width have been grown with virtually zero detectable intragrain defects. Another mode is found which results in much smaller crystals grown by partial melting. The dominant grain boundaries identified are Σ3 <111> 60° twins. Hall mobilities as high as 470 cm2/Vs have been recorded. A diffused emitter is used to create a p-n junction at the rear of the films which produces open-circuit voltages as high as 539 mV.

Afm/Tem Investigation of Low Temperature Polycrystalline Silicon Grown by ECR-CVD

1995 ◽  
Vol 406 ◽  
Author(s):  
H. L. Hsiao ◽  
K. C. Wang ◽  
L. W. Cheng ◽  
A. B. Yang ◽  
T. R. Yew ◽  
...  
Keyword(s):  
Low Temperature ◽  
Polycrystalline Silicon ◽  
Electron Cyclotron Resonance ◽  
Film Growth ◽  
Chemical Vapor ◽  
Plan View ◽  
3 Dimensional ◽  
High Resolution Tem ◽  
Si Films ◽  
Polycrystalline Silicon Films

AbstractThe polycrystalline silicon films were deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD) with hydrogen dilution at 250°C and without any thermal annealing. The surface morphology and the microstructure of the poly-Si films are investigated by atomic force microscopy (AFM), plan-view transmission electron microscopy (TEM), crosssectional TEM and high resolution TEM (HRTEM). The low temperature poly-Si films deposited by ECR-CVD show a special leaf-like grain shape (plan-view) and an upside-down cone shape (3-dimensional view). The grains in the poly-Si films have preferred orientation of <112> and the longer side of the leaf-like grain is direction and the shorter side is direction. Lattice bending and interruption are found in the films. The arrangement of the atoms on the grains are well ordered, while atoms in the interfacial regions are randomly distributed. A simple grain formation model based on growth rate differences between different planes and etching effect can explain the film growth mechanism and the formation of the special grain geometry.

Deposition of Diamond using an Electron Cyclotron Resonance Plasma System

1994 ◽  
Vol 339 ◽  
Author(s):  
Donald R. Gilbert ◽  
Rajiv Singh ◽  
W. Brock Alexander ◽  
Dong Gu Lee ◽  
Patrick Doering
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Electron Cyclotron ◽  
Plasma System ◽  
Electron Cyclotron Resonance Plasma ◽  
Ecr Plasma ◽  
Low Pressures ◽  
Substrate Temperatures ◽  
Resonance Plasma

ABSTRACTWe have used an electron cyclotron resonance plasma system to perform chemical vapor deposition experiments on single-crystal, (110) oriented diamond substrates. The depositions were carried out at 0.060 Torr using mixtures of methanol in hydrogen. Substrate temperatures were varied from approximately 620 to 800 °C The film morphology was examined using SEM and microstructural phase determination was attempted using micro-Raman spectroscopy. Based on the results of these experiments, we have determined general trends for the characteristics of films deposited on diamond from the ECR plasma at low pressures and temperatures.

Sign in / Sign up

Export Citation Format

Share Document