Microstructural Analysis of Copper Foil Etched and Annealed in ECR Plasma Reactor

2022 ◽  
Vol 1048 ◽  
pp. 121-129
Author(s):  
Samit Karmakar ◽  
Soumik Kumar Kundu ◽  
Aditya Mukherjee ◽  
Sujit Kumar Bandyopadhyay ◽  
Satyaranjan Bhattacharyya ◽  
...  
Keyword(s):  
Copper Foil ◽  
Electron Cyclotron Resonance ◽  
Plasma Reactor ◽  
Hydrogen Plasma ◽  
Microstructural Analysis ◽  
Chemical Vapour ◽  
Working Pressure ◽  
Ecr Plasma ◽  
Average Grain Size ◽  
Xrd Studies

Microstructural analysis of commercially available cold-rolled polycrystalline copper foil, etched and annealed in an in-house developed Electron Cyclotron Resonance (ECR) Plasma Enhanced Chemical Vapour Deposition (PE-CVD) reactor, have been carried out using x-ray diffraction (XRD) studies. The annealing experiments were carried out under a vacuum environment, keeping the working pressure of the reactor at 50×10-3 mbar, for three different time spans of 30 mins, 45 mins and 1 hour at 823 K (550 °C) and 923 K (650 °C) respectively in presence of hydrogen plasma. The XRD studies reveal the significance of annealing time at two different temperatures for the determination of physical and microstructural parameters such as the average grain size and micro-strain in copper lattice by Williamson-Hall (W-H) method.

In Situ Diagnostics of Methane/Hydrogen Plasma Interactions with Si(100)

1999 ◽  
Vol 569 ◽  
Author(s):  
H. L. Duan ◽  
Stacey F. Bent
Keyword(s):  
Silicon Surface ◽  
Electron Cyclotron Resonance ◽  
Hydrogen Plasma ◽  
Film Deposition ◽  
Diagnostic Study ◽  
Methane Pressure ◽  
Plasma Interactions ◽  
Ecr Plasma ◽  
Hydrogen Dilution

ABSTRACTMethane/hydrogen plasmas have been reported to be sources both for a-C:H film deposition and for compound semiconductor etching. In this work, an in situ diagnostic study of methane/hydrogen plasma interactions with a silicon surface is carried out, focusing on the effect of hydrogen dilution. A remote electron cyclotron resonance (ECR) plasma using a H2/Ar mixture excites methane gas near a Si(l 00) substrate. In situ multiple internal reflection Fourier transform infrared (MIR-FTIR) spectroscopy is used to probe the surface species at different hydrogen dilution ratios. We find that at low methane pressure without hydrogen dilution, a-C:H films are deposited. With H2 dilution, the results suggests that some sputter/etching of the silicon surface occurs. Hence, methyl groups are identified as potential etchants for silicon materials. The data suggest that there is a competition between etching and deposition chemistry which depends strongly upon the methane pressure and hydrogen ratio in the plasma.

Post-Deposition Annealing and Hydrogenation of Hot-Wire Amorphous and Microcrystalline Silicon Films

1996 ◽  
Vol 452 ◽  
Author(s):  
J. P. Conde ◽  
P. Brogueira ◽  
V. Chu
Keyword(s):  
Electron Cyclotron Resonance ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Hot Wire ◽  
Microcrystalline Silicon ◽  
Post Deposition Annealing ◽  
Ecr Plasma ◽  
Hydrogen Plasmas ◽  
Post Deposition

AbstractAmorphous and microcrystalline silicon films deposited by hot-wire chemical vapor deposition were submitted to thermal annealing and to RF and electron-cyclotron resonance (ECR) hydrogen plasmas. Although the transport properties of the films did not change after these post-deposition treatments, the power density of a Ar+ laser required to crystallize the amorphous silicon films was significantly lowered by the exposure of the films to a hydrogen plasma. This decrease was dependent on the type of hydrogen plasma used, being the strongest for an ECR plasma with the substrate held at a negative bias, followed by an ECR hydrogen plasma with the substrate electrode grounded, and finally by an RF hydrogen plasma.

Electron Cyclotron Resonance CVD of Silicon Oxynitride for Optoelectronic Applications

1993 ◽  
Vol 300 ◽  
Author(s):  
M. Boudreau ◽  
M. Boumerzoug ◽  
R. V. Kruzelecky ◽  
P. Mascher ◽  
P. E. Jessop ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Organic Liquid ◽  
Chemical Vapour ◽  
Optical Emission ◽  
Electron Cyclotron ◽  
Silicon Oxynitride ◽  
Ecr Plasma ◽  
Trade Name ◽  
Low Levels

ABSTRACTSilicon oxynitrides with compositions varying from Si3N4 to SiO2 were deposited on silicon substrates by electron cyclotron resonance plasma enhanced chemical vapour deposition (ECRPECVD). The silicon source used is an organic liquid, Tris Dimethyl Amino Silane (trade name SiN – 1000TM). Optical emission spectroscopy is used to characterize the ECR plasma, this information then is correlated with the optical properties of the deposited film, as determined by in situ ellipsometry. Auger electron spectroscopy showed that only low levels of carbon (< 3 at%) are present. The SiO2 and Si3N4 films are close to stoichiometric, with low levels of bonded hydrogen as determined by infrared absorption spectroscopy.Planar waveguide structures were fabricated and tested using the prism coupling technique to determine the mode effective indices. These are compared to those expected from the ellipsometry measurements.

Optical and electrical properties of electron cyclotron resonance chemical vapour-deposited SiNx:H films

1992 ◽  
Vol 70 (10-11) ◽  
pp. 1104-1108 ◽  
Author(s):  
Marcel Boudreau ◽  
Mohamed Boumerzoug ◽  
Roman V. Kruzelecky ◽  
Peter Mascher ◽  
Paul E. Jessop ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapour ◽  
Electron Cyclotron ◽  
Dielectric Constants ◽  
Silicon Source ◽  
Si Substrates ◽  
Ecr Plasma ◽  
Deposition Parameters

Silicon nitride (SiNx:H) films were deposited on both InP and Si substrates at temperatures ranging from room temperature to 400 °C by electron cyclotron resonance (ECR) plasma chemical-vapour deposition. The silicon source used was ditertiary butyl silane (SiH2(C4H9)2) that was activated by ECR plasmas composed of nitrogen alone or in combination with hydrogen or argon. The effects of various deposition parameters on the film properties are reported. The film indices of refraction ranged from 1.85 to 2.0, while the buffered HF etch rates were as low as 6 Å min−1 (1 Å = 10−10 m). Si/N ratios of the films ranged from 0.70 to 2.5, while the total hydrogen content was found to be approximately 20 to 25 at.%. Incorporation of carbon from the organic silicon source was efficiently suppressed (< 1%) by the addition of a small amount of H2 to the ECR plasma gas. To study the electrical properties of the SiNx:H films, metal–insulator–semiconductor structures were fabricated. Film resistivities as high as 2 × 1015 Ω cm and insulator dielectric constants from 4 to 5 were measured.

Growth of Er Doped si Films by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition

1993 ◽  
Vol 301 ◽  
Author(s):  
Jim L. Rogers ◽  
Walter J. Varhue ◽  
Edward Adams
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Electron Cyclotron ◽  
Plasma Stream ◽  
Ecr Plasma ◽  
Si Films

ABSTRACTThin Si films doped with Er have been grown at low temperature by plasma enhanced chemical vapor deposition. The Er gas source is a sublimed organo-metallic compound fed into the process chamber. High doping concentrations without precipitation are possible because of the low deposition temperatures. The process relies on the beneficial effects of low energy ion bombardment to reduce the growth temperature. The ions as well as reactive chemical species are produced by an electron cyclotron resonance (ECR) plasma stream source. A hydrogen plasma stream is used to perform an in-situ pre-deposition clean to remove oxide from the Si surface. Film crystallinity and impurity concentration are determined by Rutherford backscattering spectrometry.

Low Temperature Growth of Crystalline Silicon Thin Films by ECR Plasma CVD

1997 ◽  
Vol 485 ◽  
Author(s):  
Licai Wang ◽  
H S Reehal
Keyword(s):  
Electron Cyclotron Resonance ◽  
Secondary Ion Mass Spectrometry ◽  
Film Growth ◽  
Crystalline Silicon ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Glass Substrates ◽  
Ecr Plasma ◽  
Silicon Thin Films ◽  
Xrd Patterns

AbstractCrystalline silicon films have been deposited on silicon and metal-coated coming 7095 glass substrates at temperatures of 280 ˜ 680°C by electron cyclotron resonance (ECR) plasma assisted chemical vapor deposition (PACVD) using an ultrahigh vacuum chamber and SiH4 as the feedstock. X-ray diffraction (XRD), Raman spectroscopy, Rutherford backscattering (RBS) and secondary ion mass spectrometry (SIMS) have been used to characterize the films. At temperatures of ˜280 °C, the as-grown films are microcrystalline with crystalline fractions between 50–97%. From XRD patterns, randomly oriented crystalline silicon grains were clearly present in the films with the grain sizes estimated to be between 170 – 370Å. As the growth temperature is increased to 470°C, epitaxial growth on silicon is observed at growth rates of 240Å/min without bias or hydrogen plasma treatment before film growth. N-type doping of the layers has been achieved using PH3 as the doping gas and solar cells with ECR grown emitters fabricated on 15μm thick p-type epilayers on p+ substrates.

High Quality Growth of SiO2 at 80° C by Electron Cyclotron Resonance (ECR) for Thin Film Transistors

2001 ◽  
Vol 685 ◽  
Author(s):  
Riyaz Rashid ◽  
A. J. Flewitt ◽  
D. Grambole ◽  
U. Kreiβig ◽  
J. Robertson ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Breakdown Strength ◽  
Plasma Reactor ◽  
Interface State ◽  
Electron Cyclotron ◽  
Ecr Plasma ◽  
Ion Energies ◽  
Phase Combination ◽  
State Densities

AbstractSilicon dioxide (SiO2) films have been deposited at 80°C in an Electron Cyclotron Resonance (ECR) plasma reactor from a gas phase combination of He, O2 and SiH4. The ECR configuration provides a highly ionised plasma (∼1016 m−3) with low ion energies (∼10eV) that gives efficient dehydrogenation of the growing material whilst minimizing defect creation. The physical characterisation of the material gives a refractive index of 1.46, an etch rate in buffered HF below 3 nm/s and a hydrogen content of less than 2 at.%. Electrical tests reveal a resistivity in excess of 1014Ωcm, an average breakdown strength of 5 MV/cm, and fixed charge and interface state densities of 1011 cm−2 and 1012 eV−1cm−2 respectively. This has been achieved using a O2:SiH4 flow ratio ≍ 2:1.

Interaction of Atomic Oxygen Species Generated Using Electron Cyclotron Resonance (ECR) Plasma with Thermal Protecting System (TPS) Material

2015 ◽  
Vol 830-831 ◽  
pp. 561-564
Author(s):  
A.S. Bansode ◽  
S.E. More ◽  
Sudha V. Bhoraskar ◽  
M.R. Ajit ◽  
Vikas L. Mathe
Keyword(s):  
Metal Complex ◽  
Cyclotron Resonance ◽  
Atomic Oxygen ◽  
Electron Cyclotron Resonance ◽  
Plasma Reactor ◽  
Space Vehicle ◽  
Electron Cyclotron ◽  
X Ray Diffraction ◽  
Ecr Plasma ◽  
Microscopy Technique

Thermal Protecting System (TPS) material, consisted of silica reinforced fibres and coated with transtion metal complex was exposed to atomic oxygen produced in Electron Cyclotron Resonance (ECR) plasma reactor. The choice of atomic oxygen is based on the necessity of investigating its inteaction with transition metal complex during the re-entry of the space vehicle. The experiments were carried out at different temperature in the range of 30-500°C. The surface morphology of the tile material was investigated with and without exposure to oxygen plasma as a function of temperature using scanning electron microscopy technique, whereas structural analysis of the same samples was carried out using x-ray diffraction technique. Prior to this, ECR plasma reactor was charectorised for electron energy and plasma density using Langmuir probe so as to know the plasma parameter during the interaction.

scholarly journals Light Emission from Rare-Earth Doped Silicon Nanostructures

2008 ◽  
Vol 2008 ◽  
pp. 1-10 ◽  
Author(s):  
J. Li ◽  
O. H. Y. Zalloum ◽  
T. Roschuk ◽  
C. L. Heng ◽  
J. Wojcik ◽  
...  
Keyword(s):  
Rare Earth ◽  
Electron Cyclotron Resonance ◽  
Light Emission ◽  
Chemical Vapour ◽  
Annealing Conditions ◽  
Lighting Conditions ◽  
Deposition Parameters ◽  
Doped Silicon ◽  
Rare Earth Doped ◽  
Resonance Plasma

Rare earth (Tb or Ce)-doped silicon oxides were deposited by electron cyclotron resonance plasma-enhanced chemical vapour deposition (ECR-PECVD). Silicon nanocrystals (Si-ncs) were formed in the silicon-rich films during certain annealing processes. Photoluminescence (PL) properties of the films were found to be highly dependent on the deposition parameters and annealing conditions. We propose that the presence of a novel sensitizer in the Tb-doped oxygen-rich films is responsible for the indirect excitation of the Tb emission, while in the Tb-doped silicon-rich films the Tb emission is excited by the Si-ncs through an exciton-mediated energy transfer. In the Ce-doped oxygen-rich films, an abrupt increase of the Ce emission intensity was observed after annealing at 1200∘C. This effect is tentatively attributed to the formation of Ce silicate. In the Ce-doped silicon-rich films, the Ce emission was absent at annealing temperatures lower than 1100∘C due to the strong absorption of Si-ncs. Optimal film compositions and annealing conditions for maximizing the PL intensities of the rare earths in the films have been determined. The light emissions from these films were very bright and can be easily observed even under room lighting conditions.

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