Hydrogenated Carbon-Nitrogen Films Obtained by Pecvd using Acetylene and Nitrogen as Precursor Gases

1997 ◽  
Vol 498 ◽  
Author(s):  
L. G. Jacobsohn ◽  
D. F. Franceschini ◽  
F. L. Freire
Keyword(s):  
Nitrogen Content ◽  
Rutherford Backscattering Spectrometry ◽  
Raman Band ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Ir Absorption ◽  
Elastic Recoil ◽  
Elastic Recoil Detection ◽  
Ir Absorption Spectra ◽  
Film Deposition Rate

ABSTRACTAmorphous hydrogenated carbon-nitrogen films were deposited by plasma enhanced chemical vapor deposition (PECVD) using acetylene-nitrogen mixtures. The atomic composition and density of the films were determined by Rutherford backscattering spectrometry (RBS) and elastic recoil detection (ERDA). Raman and Infrared spectroscopies monitored their structure. The addition of nitrogen gas to the deposition atmosphere resulted in a decrease in the film deposition rate. The increase of the nitrogen content is accompanied by the reduction of the carbon content. The IR absorption spectra show an increase intensity of the C=N Raman band and the N-H and CsN stretching bands. On the other hand, the IR results show a decrease in the intensity of the C-H stretching band. Raman results suggest an increase with the nitrogen content of the fraction of carbon atoms in a sp2 state of hybridization with the nitrogen content. The internal compressive stress has been measured by the determination of the bending of the substrate; a reduction of up to 50 % has been observed depending on the nitrogen content.

scholarly journals Plasma CVD of B-C-N Thin Films Using Triethylboron in Argon-Nitrogen Plasma

2020 ◽  
Author(s):  
Laurent Souqui ◽  
Justinas Palisaitis ◽  
Hans Högberg ◽  
Henrik Pedersen
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Nitrogen Plasma ◽  
Film Deposition ◽  
Low Density ◽  
Scanning Electron Micrographs ◽  
Elastic Recoil ◽  
Plasma Cvd ◽  
Plasma Chemical Vapor Deposition

<div> <p>Amorphous boron-carbon-nitrogen (B-C-N) films with low density are potentially interesting as alternative low-dielectric-constant (low-κ) materials for future electronic devices. Such applications require deposition at temperatures below 300 °C, making plasma chemical vapor deposition (plasma CVD) a preferred deposition method. Plasma CVD of B-C-N films is today typically done with separate precursors for B, C and N or with precursors containing B–N bonds and an additional carbon precursor. We present an approach to plasma CVD of B-C-N films based on triethylboron (B(C<sub>2</sub>H<sub>5</sub>)<sub>3</sub>) a precursor with B-C bonds in an argon-nitrogen plasma. From quantitative analysis with Time-of-Flight Elastic Recoil Detection Analysis (ToF-ERDA), we find that the deposition process can afford B-C-N films with a B/N ratio between 0.98 and 1.3 and B/C ratios between 3.4 and 8.6 and where the films contain between 3.6 and 7.8 at. % H and 6.6 and 20 at. % of O. The films have low density, from 0.32 to 1.6 g/cm<sup>3</sup> as determined from cross-section scanning electron micrographs and ToF-ERDA with morphologies ranging from smooth films to separated nanowalls. Scaning transmission electron microscopy shows that C and BN does not phase seperarte in the film. The static dielectric constant κ, measured by capacitance–voltage measurements<b>,</b> varies with the Ar concentration in the range from 3.3 to 35 for low and high Ar concentrations, respectively. We suggest that this dependence is caused by the energetic bombardment of plasma species during film deposition.</p> </div> <br>

Single Source CVD of LiAlO2

1997 ◽  
Vol 495 ◽  
Author(s):  
Wonyong Koh ◽  
Su-Jin Ku ◽  
Yunsoo Kim
Keyword(s):  
Photoelectron Spectroscopy ◽  
Profile Analysis ◽  
Chemical Vapor ◽  
Single Source ◽  
Elastic Recoil ◽  
Elastic Recoil Detection ◽  
Si Substrates ◽  
Metal Contents ◽  
Deposited Film ◽  
Heterometallic Compound

ABSTRACTWe successfully deposited LiAlO2 films on Si substrates at 400–600 °C by single source chemical vapor deposition using a heterometallic compound, Li(O'Pr)2Al(CH3)2, which contains Li, Al, and O at the same 1:1:2 ratio as LiAlO2. Li(O'Pr)2Al(CH3)2 is sufficiently volatile to be vapor-transported at 50 °C. Elastic recoil detection and Rutherford backscattering spectroscopy analyses of a deposited film indicate that the film is stoichiometric (Li:Al:O = 1.0:1.0:2.0) and contains a few atomic percent hydrogen (5 %) and carbon (2 %). Depth profile analysis of X-ray photoelectron spectroscopy also confirms the 1:1 ratio of metal contents in the films. As-deposited films were amorphous, however, crystallized to β- or γ-LiA1O2 after annealing at 950 °C.

High Quality P-Doped μc-Si:H Films as Obtained by low Temperature Lpcvd of Disilane

1992 ◽  
Vol 283 ◽  
Author(s):  
C. Manfredotti ◽  
F. Fizzotti ◽  
G. Amato ◽  
L. Boarino ◽  
M. Abbas
Keyword(s):  
Chemical Vapor ◽  
Elastic Recoil ◽  
Volume Percentage ◽  
Elastic Recoil Detection ◽  
Detection Analysis ◽  
Transmission Electron ◽  
Pressure Chemical ◽  
Convergent Beam ◽  
P Type ◽  
High Degree

ABSTRACTBoth B- and P- doped silicon films deposited by Low Pressure Chemical Vapor Deposition (LPCVD) at 300 °C (p-type) and 420 °C (n-type) have been characterized by optical absorption, Photothermal Deflection Spectroscopy (PDS), resistivity, Elastic Recoil Detection Analysis (ERDA), Transmission Electron Microscopy (TEM), Convergent-Beam Electron Diffraction (CBED) and Raman spectroscopy measurements. P-doped films, deposited at large PH3 flux rates, show a high degree of microcrystallinity, indicating that P activates the nucleation process even at low temperatures. In this case, values of activation energy of resistivity as low as 0.007 eV were obtained. Both TEM and RAMAN results confirm a volume percentage of micro crystallinity above 30%. On the contrary, B-doped samples are not microcrystalline at least in the doping range investigated, and show a behaviour not different from samples deposited by PECVD.

Characterization of SiC Thin Film Obtained by Magnetron Reactive Sputtering: IBA, IR and Raman Studies

2005 ◽  
Vol 483-485 ◽  
pp. 287-290
Author(s):  
H. Colder ◽  
M. Morales ◽  
Richard Rizk ◽  
I. Vickridge
Keyword(s):  
Nuclear Reaction ◽  
Hydrogen Content ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Nuclear Reaction Analysis ◽  
Elastic Recoil ◽  
Crystalline Fraction ◽  
Elastic Recoil Detection ◽  
Beam Analysis

Co-sputtering of silicon and carbon in a hydrogenated plasma (20%Ar-80%H2) at temperatures, Ts, varying from 200°C to 600°C has been used to grow SiC thin films. We report on the influence of Ts on the crystallization, the ratio Si/C and the hydrogen content of the grown films. Film composition is determined by ion beam analysis via Rutherford backscattering spectrometry, nuclear reaction analysis via the 12C(d,p0)13C nuclear reaction and elastic recoil detection analysi(ERDA) for hydrogen content. Infrared absorption (IR) has been used to determine the crystalline fraction of the films and the concentration of the hydrogen bonded to Si or to C. Complementary to IR, bonding configuration has been also characterized by Raman spectroscopy. As Ts is increased, the crystalline fraction increases and the hydrogen content decreases, as observed by both ERDA and IR. It also appears that some films contain a few Si excess, probably located at the nanograin boundaries.

Disordering behavior and helium diffusion in He+ irradiated 6H–SiC

2002 ◽  
Vol 17 (2) ◽  
pp. 271-274 ◽  
Author(s):  
W. Jiang ◽  
W. J. Weber ◽  
C. M. Wang ◽  
Y. Zhang
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Elastic Recoil ◽  
Transmission Electron Microscopy Study ◽  
Cross Sectional ◽  
Elastic Recoil Detection ◽  
Ion Channeling ◽  
Detection Analysis ◽  
Transmission Electron

Single-crystal 6H–SiC wafers were irradiated at 300 K with 50 keV He+ ions to fluences ranging from 7.5 to 250 He+/nm2. Ion-channeling experiments with 2.0 MeV He+ Rutherford backscattering spectrometry were performed to determine the depth profile of Si disorder. The measured profiles are consistent with SRIM-97 simulations at and below 45 He+/nm2 but higher than the SRIM-97 prediction at both 100 and 150 He+/nm2. Cross-sectional transmission electron microscopy study indicated that the volume expansion of the material is not significant at intermediate damage levels. Results from elastic recoil detection analysis suggested that the implanted He atoms diffuse in a high-damage regime toward the surface.

Microstructure and He Bubble Effects on Al-Cu Thin Films

2003 ◽  
Vol 792 ◽  
Author(s):  
C.S. Camacho ◽  
P.F.P. Fichtner ◽  
F.C. Zawislak ◽  
G. Feldmann
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Microelectronic Device ◽  
Elastic Recoil ◽  
Elastic Recoil Detection ◽  
Detection Analysis ◽  
Grain Structures ◽  
Transmission Electron ◽  
Device Reliability ◽  
Improve Device ◽  
Post Implantation

ABSTRACTThe effects of film morphology (mosaic- or bamboo-like grain structures) and of He bubbles on the redistribution of Cu, as well as on the formation of Al-Cu precipitates in 200 nm thick Al/SiO2 films similar to microelectronic device interconnects, are investigated using Rutherford backscattering spectrometry, elastic recoil detection analysis and transmission electron microscopy. As-deposited and pre-annealed Al films were implanted with Cu and/or He ions forming concentration profiles located 100 nm below the surface and with peak concentrations of about 3 at.%. It is shown that grain boundaries and/or He bubbles can affect the vacancy fluxes inside the grains and reduce or even inhibit the Cu redistribution as well as the nucleation and growth of θ and θ′ Al-Cu precipitates during post-implantation annealings at temperatures from 473 to 553 K. It is also shown that mosaic-like grain structures allow the control of grain size distribution within the 25 to 1500 nm size range, thus providing an additional microstructure engineering tool to improve device reliability against electromigration failures.

Multi-Technique Characterization of WSix films

1994 ◽  
Vol 337 ◽  
Author(s):  
S.M. Baumann ◽  
C.J. Hitzman ◽  
I.C. Ivanov ◽  
AY. Craig ◽  
P.M. Lindley
Keyword(s):  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Barrier Properties ◽  
Oxide Thickness ◽  
Grain Structure ◽  
Elastic Recoil ◽  
X Ray ◽  
Elastic Recoil Detection ◽  
Surface And Interface

ABSTRACTWSix films are used extensively for contact, interconnect, and, in some cases, diffusion and Schottky barriers in semiconductor devices1. The electrical and barrier properties of these films are affected by a variety of factors, such as film stoichiometry, morphology, impurities, etc. This paper will address the capabilities and limitations of a variety of techniques which are frequently used to characterize WSix films. Techniques which were studied include: Dynamic and Static Secondary Ion Mass Spectrometry (SIMS), Rutherford Backscattering Spectrometry and Elastic Recoil Detection (RBS/ERD), Auger Electron Spectroscopy (AES), Field Emission Scanning Electron Microscopy (FE-SEM), Total Reflection X-ray Fluorescence (TXRF), Atomic Force Microscopy (AFM), and X-Ray Photoelectron Spectroscopy (XPS). Film characteristics which were studied included surface morphology; grain structure; film stoichiometry; surface and interface oxide thickness and composition; and surface, bulk, and interface impurity concentrations including metallic, atmospheric, and dopant impurities. Cross correlation between the techniques was performed whenever possible in order to compare the relative accuracy of the techniques as well.

Sign in / Sign up

Export Citation Format

Share Document