Self And Ion Beam Annealing of P,Ar, And Kr In Silicon

1985 ◽  
Vol 51 ◽  
Author(s):  
S. Cannavo ◽  
A. La Ferla ◽  
S.U. Campisano ◽  
E. Rimini ◽  
G. Ferla ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Current Density ◽  
Ion Beam ◽  
Amorphous Layer ◽  
High Current ◽  
Tem Analysis ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Fluence Range

ABSTRACTThe damage produced by high current density ∿l0µA/cm2 implants of 120 keV P+ into <111> and <100> silicon wafers, 500 °m thick, has been investigated in the fluence range 1×l01 5/cm2-l×l016 /cm2 by ion channeling and by transmission electron microscopy. For both orientations the thickness of the damage layers increases with the fluence up to 2×1015 /cm2 and then decreases. The rate of regrowth is a factor two faster for the <100> with respect to the <111> oriented Si crystals. Similar ratios have been found in pre-amorphized samples and irradiated with Kr+ ions in the temperature range 350°C-430°C. The TEM analysis reveals the presence of hexagonal silicon and of twins in small amounts for both orientations. The beam induced epitaxial growth depends also on the species present in the amorphous layer. A comparison between self-annealing and beam annealing in Si <100> preamorphized with Ar+ or P+ shows a noticeable retardation of the growth rate in the presence of Ar+.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

A Methodology to Reduce Ion Beam Induced Damage in TEM Specimens Prepared by FIB

2002 ◽  
Author(s):  
Chin Kai Liu ◽  
Chi Jen. Chen ◽  
Jeh Yan.Chiou ◽  
David Su
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Sensitive Issue ◽  
Transmission Electron

Abstract Focused ion beam (FIB) has become a useful tool in the Integrated Circuit (IC) industry, It is playing an important role in Failure Analysis (FA), circuit repair and Transmission Electron Microscopy (TEM) specimen preparation. In particular, preparation of TEM samples using FIB has become popular within the last ten years [1]; the progress in this field is well documented. Given the usefulness of FIB, “Artifact” however is a very sensitive issue in TEM inspections. The ability to identify those artifacts in TEM analysis is an important as to understanding the significance of pictures In this paper, we will describe how to measure the damages introduced by FIB sample preparation and introduce a better way to prevent such kind of artifacts.

TEM Characterization of As-Deposited and Annealed Ni/Al Multilayer Thin Film

2010 ◽  
Vol 16 (6) ◽  
pp. 662-669 ◽  
Author(s):  
S. Simões ◽  
F. Viana ◽  
A.S. Ramos ◽  
M.T. Vieira ◽  
M.F. Vieira
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Ion Beam ◽  
Microstructural Characterization ◽  
Multilayer Thin Films ◽  
Tem Analysis ◽  
Plan View ◽  
Transmission Electron

AbstractReactive multilayer thin films that undergo highly exothermic reactions are attractive choices for applications in ignition, propulsion, and joining systems. Ni/Al reactive multilayer thin films were deposited by dc magnetron sputtering with a period of 14 nm. The microstructure of the as-deposited and heat-treated Ni/Al multilayers was studied by transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) in plan view and in cross section. The cross-section samples for TEM and STEM were prepared by focused ion beam lift-out technique. TEM analysis indicates that the as-deposited samples were composed of Ni and Al. High-resolution TEM images reveal the presence of NiAl in small localized regions. Microstructural characterization shows that heat treating at 450 and 700°C transforms the Ni/Al multilayered structure into equiaxed NiAl fine grains.

Application of Channeling Techniques and High Resolution Transmission Electron Microscopy to Ion-Beam Damaged Zircon

1994 ◽  
Vol 373 ◽  
Author(s):  
N. Bordes ◽  
R.C. Ewing
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Sections ◽  
Radiation Effects ◽  
Ion Beam ◽  
Amorphous Layer ◽  
Layer Depth ◽  
Damage Layer ◽  
Transmission Electron ◽  
Complementary Techniques

AbstractZircon (ZrSiO4) samples were irradiated at 100K with 400 keV Ar+ and Xe+ ion beams to fluences ranging from 5x1013 to 5x1015 ions/cm2. Rutherford backscattering spectroscopy (RBS) experiments were completed to study the dechanneling of He ions in the irradiated zircons. Cross-sections of some irradiated samples were prepared, and the zircon microstructure was examined by highresolution transmission electron microscopy (HRTEM). At doses greater than 8x1014 ions/cm2 or 0.8 dpa (displacements per atom), RBS channeling experiments showed the presence of a disordered or amorphous layer. The electron microscopy confirmed the presence of an amorphous layer extending over a depth of 300 to 350 nm (Ar+ irradiation) and 200 nm (Xe+ irradiation) in agreement with the damage layer depth calculated by TRIM. At depths extending beyond the damage peak, TEM reveals an amorphous layer with “islands” of crystalline material of σ 30 nm in size. These experiments show that RBS and TEM are complementary techniques in investigating radiation effects in irradiations of bulk ceramic.

Defect Analysis and Process Development of Microelectronics Devices Using Focused Ion Beam and Energy Filtering Transmission Electron Microscopy.

1999 ◽  
Vol 5 (S2) ◽  
pp. 900-901
Author(s):  
R. Pantel ◽  
G. Mascarin ◽  
G. Auvert
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Focused Ion Beam ◽  
Process Development ◽  
Ion Beam ◽  
Preparation Technique ◽  
Defect Analysis ◽  
Tem Analysis ◽  
Energy Filtering ◽  
Transmission Electron

1. Introduction.With continuing reductions in semiconductor device dimensions high spatial resolution physical and chemical analysis techniques will be more and more required for defect analysis and process development in the microelectronics field. Transmission Electron Microscopy (TEM) analysis is now extensively used thanks to the fast Focused Ion Beam (FIB) specimen preparation technique which has furthered its development. Recently, we have shown the advantages of adding Electron Energy Loss Spectroscopy (EELS) to FIB-TEM analysis for semiconductor process characterization. In this paper we extend the EELS technique using FIB sample preparation to Energy Filtering TEM (EFTEM) observations. The EFTEM analysis allows high-resolution compositional mapping using spectroscopic imaging of core level ionization edges3. We show some applications of FIB-EFTEM to defect analysis and process development.2. Experimental details.The FIB system is a MICRION model 9500 EX using a gallium ion beam of 50 keV maximum energy with a 5 nm minimum spot diameter.

scholarly journals Amorphization and Nano-Crystallization of Ni-Nb Coating on GH3039 Alloys by High Current Pulsed Electron Beam

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 347
Author(s):  
Conglin Zhang ◽  
Xuesu Ji ◽  
Jiahong Wang ◽  
Lingfan Lu ◽  
Zirun Yang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Beam ◽  
Amorphous Layer ◽  
Pulse Number ◽  
Nano Particles ◽  
High Current ◽  
Pulsed Electron Beam ◽  
Transmission Electron ◽  
Pulsed Irradiation

In this paper, the Ni-Nb coatings were successfully prepared onto the GH3039 alloys by High current pulsed electron beam (HCPEB). The transmission electron microscopy (TEM) results confirmed that the Ni-Nb layer of 10-pulsed samples exhibited partial amorphization, which was consisted of γ-Ni particles, rod-like Ni3Nb particles and nano Ni3Nb with 30 nm in size. After 20-pulsed irradiation, the results show that only Ni3Nb clusters with around 3 nm in size were dispersed in fully amorphization layer. With increased pulse number to 30, the nano-particles embedded into the amorphous layer were grown up, the size of which was about 8 nm. The microstructure evolution during HCPEB irradiation was from the partial amorphous to fully amorphous and then to nano-crystallization. The 20-pulsed samples possessed the best hardness and corrosion resistance. The ultrafine clusters uniformly embedded into amorphous layer were main reason for improving properties.

Evolution of microstructure in TiC/NiCr cermet induced by electropulsing

2003 ◽  
Vol 18 (7) ◽  
pp. 1543-1550 ◽  
Author(s):  
W. Zhang ◽  
M. L. Sui ◽  
Y. Z. Zhou ◽  
J. D. Guo ◽  
G. H. He ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Current Density ◽  
High Current ◽  
X Ray Diffraction ◽  
X Ray ◽  
Deformation Twins ◽  
Transmission Electron ◽  
Transient Rise ◽  
Evolution Of Microstructure

Microstructures of a TiC/Ni80Cr20 cermet, subjected to single high-current-density electropulsing, were characterized by x-ray diffraction, transmission electron microscopy, and high-resolution transmission electron microscopy. Under the electropulsing, the shift of NiCr peaks versus the reverse change of TiC counterparts illustrates that the treatment gives rise to strong thermal stress impacting on the cermet. The stress, accompanied by the transient rise of temperature, led to microstructural evolutions of the cermet. Some nanostructured TiC grains, consisting of many nanocrystallites with small-angle grain boundaries, developed during electropulsing. Also, many regions teemed with coexisting nanosized TiC and NiCr crystallites, which possessed good bonding. Within the NiCr regions, large amounts of deformation twins were produced by the electropulsing.

Ion Beam Synthesis of Buried CoSi2 Layers in SiGe Alloys

1992 ◽  
Vol 279 ◽  
Author(s):  
R. Jebasinski ◽  
S. Mantl ◽  
Chr. Dieker ◽  
H. Dederichs ◽  
L. Vescan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Single Crystal ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Channeling ◽  
Transmission Electron

ABSTRACTSynthesis of buried, epitaxial CoSi2 layers in Si1−xGex alloys (x =0.48 and x = 0.09) by 100 and 150 keV Co+ ion implantation and subsequent rapid thermal annealing was studied by X-Ray diffraction, Rutherford backscattering spectroscopy, He ion channeling, Auger Eectron Spectroscopy and Transmission Electron Microscopy. Buried single-crystal CoSi2 layers in the Si0.91Ge0.09 alloy containing ≈ 1 at% Ge were formed. The suicide formation causes an outdiffusion of Ge leading to an increase in the Ge concentration of the adjacent SiGe layers. In contrast, in the Si0.52Ge0.48 alloy no buried suicide layers could be produced.

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