Low Temperature Tungsten Deposition by Arf-Laser Induced Photo-CVD

1990 ◽  
Vol 181 ◽  
Author(s):  
Rutger L. Krans ◽  
Arjan Berntsen ◽  
Wim C. Sinke
Keyword(s):  
High Vacuum ◽  
Chemical Vapor ◽  
Vacuum System ◽  
Nuclear Reaction Analysis ◽  
Direct Relation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Arf Excimer Laser ◽  
Thick Layers ◽  
Better Than

ABSTRACTLaser-induced Chemical Vapor Deposition of tungsten on Si(100) using WF6 and H2 has been investigated using a high-vacuum system comprising a cold-wall reactor. The activation source is a pulsed ArF-excimer laser. The deposition rate depends linearly on the repetition rate, when H2 is used as a reducing agent. When no H2 is used the laser radiation suppresses deposition.At deposition temperatures down to 200 °C laser deposited layers have resistivities better than 20 μΩ cm. Thick layers have resistivities down to 8 μΩ cm. There is a direct relation between layer thickness and resistivity. X-ray diffraction revealed the layers to consist of α-tungsten. β-tungsten was only obtained for those thermally deposited layers where growth was slower than expected.Nuclear reaction analysis of fluorine showed that most fluorine is present near the W-Si interface, and that the amount of fluorine relative to the amount of tungsten in the layer decreases markedly with deposition temperature.

Analysis Of Sige Fet Device Structures On Silicon-on-sapphire Substrates by X-Ray Diffraction

1998 ◽  
Vol 533 ◽  
Author(s):  
P. M. Mooney ◽  
J. O. Chu ◽  
J. A. Ott ◽  
J. L. Jordan-Sweet ◽  
B. S. Meyerson ◽  
...  
Keyword(s):  
Field Effect Transistors ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Device Fabrication ◽  
Ultra High Vacuum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Wafer Cleaning ◽  
Device Structures

AbstractSi/Si1-xGex, heterostructures on improved silicon-on-sapphire substrates were grown epitaxially by ultra-high vacuum chemical vapor deposition for application as p-channel field effect transistors. High-resolution triple-axis x-ray diffraction was used to analyze these structures quantitatively and to evaluate the effects of device fabrication processes on them. Out-;diffusion of Ge from the Si1-xGex, quantum well was observed after fabrication as was the change in thickness of the Si cap layer due to wafer cleaning and gate oxidation at 875 °C

STUDY OF SUPERCONDUCTING Y-BA-CU-O THIN FILMS WITH ZERO RESISTANCE TEMPERATURE AT 77K

1987 ◽  
Vol 01 (02) ◽  
pp. 571-574
Author(s):  
Jia-qi Zheng ◽  
Guo-guang Zheng ◽  
Dong-qi Li ◽  
Wei Wang ◽  
Jin-min Xue ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Electron Beam ◽  
High Vacuum ◽  
Vacuum System ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zero Resistance

Y-Ba-Cu-O thin films are deposited onto severval kinds of substrates by electron beam evaporating in a high vacuum system. After the heat treatment at 850–890°c for 1hr the Y-Ba-Cu-O films on the BaF2 substrates show superconducting behaviors with the midpoint Tc around 87K and zero resistance temperature at 77K. The composition and stucture analysis of these films have been studied by AES, XRFS and x-ray diffraction.

Investigation of Ti3SiC2 MAX Phase Formation onto N-Type 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 845-848 ◽  
Author(s):  
Alexia Drevin-Bazin ◽  
Jean François Barbot ◽  
Thierry Cabioc’h ◽  
Marie France Beaufort
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
High Vacuum ◽  
Max Phase ◽  
Vacuum System ◽  
X Ray Diffraction ◽  
X Ray ◽  
Annealing Temperatures ◽  
Transmission Electron

In this study, investigations on MAX phase Ti3SiC2 formation to n-type 4H-SiC substrates and its ohmic-behaved are reported. Ti-Al layers were deposited onto SiC substrates at room temperature by magnetron sputtering in high vacuum system. Thermal annealing at 1000°C in Ar atmosphere were performed to allow interdiffusion processes. X-ray diffraction and High Resolution Transmission Electron Microscopy reveal that a Ti3SiC2 contact, in perfect epitaxy with 4H-SiC substrate, is so-obtained. In situ annealing experiment underlines the evolution of Ti-Al contact microstructure versus temperature. The evolution of contact system from Schottky to Ohmic behaved is observed by I-V measurements for annealing temperatures larger than 700°C.

MOCVD Growth of GaAs on Si with Low Temperature Preheating Process

1992 ◽  
Vol 259 ◽  
Author(s):  
N. Takagi ◽  
T. Eshita ◽  
S. Miyagaki ◽  
M. Kimura ◽  
K. Takasaki
Keyword(s):  
Low Temperature ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Mocvd Growth ◽  
Atomic Force ◽  
Preheating Temperature ◽  
Wet Chemical ◽  
Better Than

ABSTRACTA low temperature preheating process is developed for metalorganic chemical vapor deposition (MOCVD) growth of GaAs on wet chemical pretreated Si substrates. NH4 OH/H2 O2 is found to be most effective in decreasing the preheating temperature among the chemicals we tried: NH4 OH/H2 O2, H2SO4 /H2O2, or hot HNO3. By using NH4OH/H2 O2, the preheating temperature is reduced from 1000°C to 875°C. X-ray diffraction measurements and surface observations with an atomic force microscope (AFM) show that the GaAs film quality obtained with the 875 °C preheating process is better than that obtained with 1000°C preheating.

Influence of High Current Pulsed Electron Beam Irradiation on Ni-P Electroless Plating

2011 ◽  
Vol 299-300 ◽  
pp. 77-81
Author(s):  
Yang Xu ◽  
Sheng Zhi Hao ◽  
Xiang Dong Zhang ◽  
Min Cai Li ◽  
Chuang Dong
Keyword(s):  
Electroless Plating ◽  
Electron Beam Irradiation ◽  
Xrd Analysis ◽  
High Current ◽  
X Ray Diffraction ◽  
X Ray ◽  
Pulsed Electron Beam ◽  
6063 Aluminum Alloy ◽  
Pre Treatment ◽  
Better Than

The surface irradiation of 6063 aluminum alloy by high current pulsed electron was conducted with the aim of replacing the complicated pre-treatment in the processes of electroless plating. To explore the microstructure changes, optical metallography, SEM (scanning electron microscope), XRD (X-ray diffraction) analyses were carried out, and the sliding tests were used for the detection of wear resistance. It was concluded that the HCPEB irradiation could replace the pre-treatment of aluminum substrate as required in conventional electroless plating with a decreased surface roughness of Ni-P alloy plating layer. The plates exhibited an amorphous microstructure as demonstrated by XRD analysis. The plates, produced with the routine of HCPEB irradiation, activation and electroless plating possess, also exhibited good quality, even better than that of conventional electroless plating technique.

scholarly journals Purification, crystallization and preliminary X-ray diffraction analysis of a hydroxycinnamoyl-CoA shikimate/quinate hydroxycinnamoyltransferase (HCT) fromCoffea canephorainvolved in chlorogenic acid biosynthesis

2012 ◽  
Vol 68 (7) ◽  
pp. 824-828 ◽  
Author(s):  
Laura A. Lallemand ◽  
James G. McCarthy ◽  
Sean McSweeney ◽  
Andrew A. McCarthy
Keyword(s):  
Structural Data ◽  
Coffea Canephora ◽  
Molecular Replacement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cell Parameters ◽  
Key Enzyme ◽  
Substrate Specifities ◽  
Drop Technique ◽  
Better Than

Chlorogenic acids (CGAs) are a group of soluble phenolic compounds that are produced by a variety of plants, includingCoffea canephora(robusta coffee). The last step in CGA biosynthesis is generally catalysed by a specific hydroxycinnamoyl-CoA quinate hydroxycinnamoyltransferase (HQT), but it can also be catalysed by the more widely distributed hydroxycinnamoyl-CoA shikimate/quinate hydroxycinnamoyltransferase (HCT). Here, the cloning and overexpression of HCT fromC. canephorainEscherichia colias well as its purification and crystallization are presented. Crystals were obtained by the sitting-drop technique at 293 K and X-ray diffraction data were collected on the microfocus beamline ID23-2 at the ESRF. The HCT crystals diffracted to better than 3.0 Å resolution, belonged to space groupP42212 with unit-cell parametersa=b= 116.1,c= 158.9 Å and contained two molecules in the asymmetric unit. The structure was solved by molecular replacement and is currently under refinement. Such structural data are needed to decipher the molecular basis of the substrate specifities of this key enzyme, which belongs to the large plant acyl-CoA-dependent BAHD acyltransferase superfamily.

OMCVD of thin films from metal diketonates and triphenylbismuth

1990 ◽  
Vol 5 (6) ◽  
pp. 1169-1175 ◽  
Author(s):  
A. D. Berry ◽  
R. T. Holm ◽  
M. Fatemi ◽  
D. K. Gaskill
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Strontium Barium ◽  
X Ray ◽  
Scanning Electron

Films containing the metals copper, yttrium, calcium, strontium, barium, and bismuth were grown by organometallic chemical vapor deposition (OMCVD). Depositions were carried out at atmospheric pressure in an oxygen-rich environment using metal beta-diketonates and triphenylbismuth. The films were characterized by Auger electron spectroscopy, Nomarski and scanning electron microscopy, and x-ray diffraction. The results show that films containing yttrium consisted of Y2O3 with a small amount of carbidic carbon, those with copper and bismuth were mixtures of oxides with no detectable carbon, and those with calcium, strontium, and barium contained carbonates. Use of a partially fluorinated barium beta-diketonate gave films of BaF2 with small amounts of BaCO3.

Composition Analysis of Ge/Si1-xGex: C Buffer on Silicon Measured by Planar Scanning Energy Dispersive Spectroscopy

2011 ◽  
Vol 383-390 ◽  
pp. 7619-7623
Author(s):  
Z Z Lu ◽  
F. Yu ◽  
L. Yu ◽  
L. H. Cheng ◽  
P. Han
Keyword(s):  
Energy Dispersive Spectroscopy ◽  
Chemical Vapor ◽  
Energy Dispersive ◽  
Composition Analysis ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Composition Distribution ◽  
X Ray ◽  
Cvd Method ◽  
Substrate Structure

In this work, Si, Ge element composition distribution in Ge /Si1-xGex:C /Si substrate structure has been characterized and modified by planar scanning energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD). The Ge /Si1-xGex:C /Si substrate samples are grown by chemical vapor deposition (CVD) method. The accuracy of EDS value can be improved by ~ 32%. And the modified EDS results indicate the Ge distribution in the Ge/Si1-xGex:C/Si sub structure.

scholarly journals MSMEG_6292, a Mycobacterium smegmatis RNA polymerase secondary channel-binding protein: purification, crystallization and X-ray diffraction analysis

2018 ◽  
Vol 74 (9) ◽  
pp. 543-548
Author(s):  
Abyson Joseph ◽  
Valakunja Nagaraja ◽  
Ramanathan Natesh
Keyword(s):  
Rna Polymerase ◽  
Mycobacterium Smegmatis ◽  
Transcriptional Activity ◽  
Molecular Replacement ◽  
X Ray Diffraction ◽  
Secondary Channel ◽  
X Ray ◽  
Cell Parameters ◽  
Crystallization Method ◽  
Better Than

The transcriptional activity of RNA polymerase (RNAP) is controlled by a diverse set of regulatory factors. A subset of these regulators modulate the activity of RNAP through its secondary channel. Gre factors reactivate stalled elongation complexes by enhancing the intrinsic cleavage activity of RNAP. In the present study, the protein MSMEG_6292, a Gre-factor homologue from Mycobacterium smegmatis, was expressed heterologously in Escherichia coli and purified using standard chromatographic techniques. The hanging-drop vapour-diffusion crystallization method yielded diffraction-quality crystals. The crystals belonged to the trigonal space group P3121 (or its enantiomorph P3221), with unit-cell parameters a = b = 83.15, c = 107.07 Å, α = β = 90, γ = 120°. The crystals diffracted to better than 3.0 Å resolution. Molecular-replacement attempts did not yield any phasing models; hence, platinum derivatization was carried out with K2PtCl4 and derivative data were collected to 3.4 Å resolution.

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