ECR Plasma Oxidation: Dependence on Energy of Argon Ion

1999 ◽  
Vol 585 ◽  
Author(s):  
S. Matsuo ◽  
M. Yamamoto ◽  
T. Sadoh ◽  
T. Tsurushima ◽  
D. W. Gao ◽  
...  
Keyword(s):  
Growth Rate ◽  
Flow Rate ◽  
Microwave Power ◽  
Electron Cyclotron Resonance ◽  
Ion Irradiation ◽  
Oxide Films ◽  
Ecr Plasma ◽  
Second Growth ◽  
Argon Ions ◽  
Argon Ion

AbstractEffects of ion-irradiation on oxidation of silicon at low temperatures (130°C) in an argon and oxygen mixed plasma excited by electron cyclotron resonance (ECR) interaction are investigated. First, dependence of energy and flux of incident ions on the flow rate and the microwave power is evaluated. It is shown that the flow rate and the microwave power are key parameters for controlling the energy and the flux of incident ions, respectively. Second, growth kinetics of the oxide films are studied. The growth rate depends on the energy and the flux of argon ions irradiated to the substrate, and the growth thickness increases proportionally to the root square of the oxidation time. Thus, the growth rate is limited by diffusion of oxidants enhanced by irradiation with argon ions. The effect of substrate bias on oxidation characteristics is also discussed. The electrical properties of the oxide films are improved by increasing the bias. The improvement is due to the reduction of damage at the surface of the substrate induced by the irradiation.

Hydrogen in Dielectric Film Formation From an Electron Cyclotron Resonance Plasma

1991 ◽  
Vol 235 ◽  
Author(s):  
J. C. Barbour ◽  
H. J. Stein
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ion Irradiation ◽  
Film Formation ◽  
Ion Beam ◽  
Electron Cyclotron ◽  
Elastic Recoil ◽  
Elastic Recoil Detection ◽  
Ecr Plasma ◽  
The Stability

ABSTRACTThe incorporation of hydrogen into silicon nitride films grown downstream from an electron cyclotron resonance (ECR) plasma decreased rapidly with increasing substrate temperature (100–600°C). Fourier transform infra-red (FTIR) spectroscopy showed that the hydrogen in the as-grown material was primarily bonded to nitrogen. However, an applied bias of -200 V caused an increase in the number of Si-H bonds relative to N-H bonds, as a result of increased ion-beam damage. In addition, ion irradiation of an as-grown film with 175 keV Ar+ at room temperature showed that H transferred from N-H bonds to Si-H bonds without a loss of H. Elastic recoil detection (ERD) and FTIR of thermally annealed films showed that the stability of H incorporated during deposition increased with deposition temperature, and that the N-H bond was more stable than the Si-H bond above 700°C. Deuterium plasma treatments, at 600°C, of annealed films caused isotopic substitution with a conservation of bonds. Therefore, hydrogen loss from annealed films is apparently accompanied by a reduction in dangling bonds.

Irradiation Effects on the Interfacial Adhesion Between Ti Films and SiO2 Substrate

1988 ◽  
Vol 119 ◽  
Author(s):  
Guoan Cheng ◽  
Baixin Liu ◽  
Hengde Li
Keyword(s):  
Adhesive Strength ◽  
Interfacial Adhesion ◽  
Ion Irradiation ◽  
Threshold Dose ◽  
Ion Energy ◽  
Sio2 Substrate ◽  
Argon Ions ◽  
Argon Ion ◽  
Thermodynamics Of Solids ◽  
Ti Films

AbstractThe interfacial adhesion of Ti films on SiO2 substrate was studied by room temperature argon ion irradiation. Range of ion energy was chosen from 100 to 300 keV. Adhesive strength was measured by scratching test. For Ti/SiO2 pair irradiated by 100 keV argon ions, the adhesion was easier to enhance and much greater strength was obtained than that irradiated by 300 keV argon ions. The threshold dose also increased with the increasing of ion energy. The adhesive strength and the threshold dose increased when the metallizing temperatures were higher. Rutherford backscattering spectra(RBS) showed that a transition layer of about 10 nm thick was formed in Ti/SiO2 interface region after irradiation to a dose of 5X1016 Ar/cm2, indicating some chemical reaction has probably taken place. The experimental results are discussed in terms of thermodynamics of solids.

Effects of gas adsorbed on solid surface during gas breakdown in electron cyclotron resonance discharge

2021 ◽  
Author(s):  
Sheng Hui Fu ◽  
Zhen- Feng Ding
Keyword(s):  
Flow Rate ◽  
Gas Flow ◽  
Electron Cyclotron Resonance ◽  
Vertical Component ◽  
Plasma Source ◽  
Time Interval ◽  
Short Time Interval ◽  
Gas Flow Rate ◽  
Ecr Plasma ◽  
Long Time

Abstract The microwave breakdown power (Pwb) in an ECR plasma source was not merely determined by pressure (gas flow rate), but found to vary with the time interval between two successive breakdowns. The measured Pwb dropped rapidly from a high value at a short time interval to a low level at a long time interval. The obtained dependence of Pwb on pressure (gas flow rate) exhibited distinct features: the normal monotonicity and abnormal non-monotonicity at the short and long time intervals, respectively. The effective zone in the antenna’s surface bombarded by hot electrons heated in the ECR layer was validated by (1) masking the antenna with a film having a variable radius; (2) calculating the distribution of the vertical component of the microwave electric field with respect to the static magnetic field; (3) imaging glows of transient breakdown discharges with a fast camera. The reduction in Pwb was mainly attributed to the enhanced emission of δ-electrons from the gas-adsorbed antenna under the bombardment of energetic electrons coming from the ECR layer.. The correlation between the dynamic gas coverage and the coefficient emission of δ-electrons was established to understand the abnormal ECR breakdown features.

Hydrogen in Dielectric Film Formation from an Electron Cyclotron Resonance Plasma

1991 ◽  
Vol 236 ◽  
Author(s):  
J. C. Barbour ◽  
H. J. Stein
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ion Irradiation ◽  
Film Formation ◽  
Ion Beam ◽  
Electron Cyclotron ◽  
Elastic Recoil ◽  
Elastic Recoil Detection ◽  
Ecr Plasma ◽  
The Stability

AbstractThe incorporation of hydrogen into silicon nitride films grown downstream from an electron cyclotron resonance (ECR) plasma decreased rapidly with increasing substrate temperature (100-600°C). Fourier transform infra-red (FTIR) spectroscopy showed that the hydrogen in the as-grown material was primarily bonded to nitrogen. However, an applied bias of -200 V caused an increase in the number of Si-H bonds relative to N-H bonds, as a result of increased ion-beam damage. In addition, ion irradiation of an asgrown film with 175 keV Ar+ at room temperature showed that H transferred from N-H bonds to Si-H bonds without a loss of H. Elastic recoil detection (ERD) and FTIR of thermally annealed films showed that the stability of H incorporated during deposition increased with deposition temperature, and that the N-H bond was more stable than the Si-H bond above 700°C. Deuterium plasma treatments, at 600°C, of annealed films caused isotopic substitution with a conservation of bonds. Therefore, hydrogen loss from annealed films is apparently accompanied by a reduction in dangling bonds.

Electroplating of Fluoropolymers using ECR Plasma Deposited TiN as Interlayer

1995 ◽  
Vol 385 ◽  
Author(s):  
A. Weber ◽  
A. Dietz ◽  
R. Pöckelmann ◽  
C.-P. Klages
Keyword(s):  
Electron Cyclotron Resonance ◽  
Surface Film ◽  
Ionization Mass ◽  
Force Microscopy ◽  
Ecr Plasma ◽  
Atomic Force ◽  
Secondary Ionization Mass Spectrometry ◽  
Argon Ions ◽  
Electroplating Process ◽  
Low Temperature Process

ABSTRACTA novel low temperature process for titanium nitride (TiN) deposition by means of an electron cyclotron resonance (ECR) plasma CVD process was applied to poly(tetrafluoroethylene) (PTFE). The organometallic compound tetrakis(dimethylamido)titanium (TDMAT) introduced into the downstream region of a nitrogen ECR plasma was used as a precursor for TiN deposition at 100°C.The thin TiN films (thickness 15-30 nm) act as interlayers to activate the electroless deposition of copper followed by an electroplating process. Prior to the deposition of the interlayer, the samples were treated on a biased susceptor with argon ions to enhance the adhesion of the TiN interlayer. This metallization procedure avoids the use of toxic and pollutive etching agents and yields adherent copper layers on PTFE.The maximum adhesion of the metal film on PTFE was established to be 13 N/mm2. As shown by atomic force microscopy (AFM), TiN grains were formed on the fluoropolymer surface. Film composition was investigated by secondary ionization mass spectrometry (SIMS).

scholarly journals EFFECT OF ARGON-ION IRRADIATION ON CAVITY FORMATION AND EVOLUTION IN 18Cr10NiTi AUSTENITIC STEEL

2020 ◽  
pp. 27-32
Author(s):  
G.D. Tolstolutskaya ◽  
S.A. Karpov ◽  
A.S. Kalchenko ◽  
I.E. Kopanets ◽  
A.V. Nikitin ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Dose Range ◽  
Swelling Behavior ◽  
Transmission Electron ◽  
Formation And Evolution ◽  
Helium Implantation ◽  
Argon Ions ◽  
Lower Temperature ◽  
Average Size ◽  
Argon Ion

The swelling behavior of 18Cr10NiTi austenitic stainless steel irradiated with energetic Ar-ions in the dose range of 40…105 displacements per atom (dpa) with simultaneously implanted argon to the levels of 0.08…6.3 at.% at temperatures of 550…700 ºC was investigated. Transmission electron microscopy (TEM) has been used to study the microstructure evolution and to determine the dependence of swelling on the damage and Ar concentration. It is shown that the highest density and average size of the cavities was observed in the region of the calculated peak damage and Ar concentration. Argon was found to promote cavity swelling at lower temperature. At simultaneous creation of defects and argon implantation it was found a shift of swelling curve to higher temperatures compared to metallic-ion irradiation. The cavity swelling behavior of an austenitic 18Cr10NiTi steel irradiated with energetic argon ions are compared with those resulting from helium implantation.

scholarly journals Surface Morphology and Microstructure of Al-O Alloys Grown by ECR Plasma Deposition

1995 ◽  
Vol 403 ◽  
Author(s):  
D. A. Marshall ◽  
J. C. Barbour ◽  
D. M. Follstaedt ◽  
A. J. Howard ◽  
R. J. Lad
Keyword(s):  
Surface Roughness ◽  
Deposition Temperature ◽  
Electron Cyclotron Resonance ◽  
Ion Irradiation ◽  
Plasma Deposition ◽  
Processing Parameters ◽  
Second Phase ◽  
Applied Bias ◽  
Force Microscopy ◽  
Ecr Plasma

AbstractThe growth of polycrystalline and amorphous aluminum-oxygen alloy films using electronbeam evaporation of Al in the presence of an O2 electron-cyclotron-resonance (ECR) plasma was investigated for film compositions varying from 40% Al (A12O3) to near 100% Al (A1Ox). Processing parameters such as deposition temperature and ion energy were varied to study their effects on surface texture and film microstructure. The Al-rich films (AlOx) contain polycrystalline fcc Al grains with finely dispersed second-phase particles of γ-A12O3 (1–2 nm in size). The surface roughness of these films was measured by atomic force microscopy and found to increase with sample bias and deposition temperature. Stoichiometric A12O3 films grown at 100°C and 400°C without an applied bias were amorphous, while an applied bias of -140 V formed a nanocrystalline γ-A12O3 film at 400°C. The surface roughness of the A12O3 increased with temperature while ion irradiation produced a smoother surface

Retention coefficients and thermal release profiles of ion-injected argon from silicates and iron

1970 ◽  
Vol 48 (12) ◽  
pp. 1472-1479
Author(s):  
Harry C. Lord III
Keyword(s):  
Volume Diffusion ◽  
Ion Irradiation ◽  
Defect Diffusion ◽  
Substrate Composition ◽  
Retention Coefficient ◽  
Thermal Release ◽  
Argon Concentration ◽  
Cold Rolled ◽  
Argon Ions ◽  
Release Profiles

Thermal release profiles and retention coefficients of injected argon ions were investigated as functions of substrate composition and prior ion-irradiation history. Samples of forsterite, enstatite, oligoclase, obsidian, and cold-rolled steel were irradiated with various sequences of 1 keV H+, 4 keV He+, and 40 keV Ar+. The release temperature of the maximum argon concentration was found to be a function of incident Ar+ dose and pre-irradiation history but not substrate composition. The hydrogen or helium pre-irradiation converted the volume diffusion argon release to a low temperature defect diffusion release. An increase in the incident dose of Ar+ ions resulted in increasing the percentage of the argon released by defect diffusion, and also decreased the argon retention coefficient.

Measurements of Microwave Power Absorbed during ECR Plasma Heating at the L-2M Stellarator

2019 ◽  
Vol 45 (11) ◽  
pp. 1059-1065
Author(s):  
S. E. Grebenshchikov ◽  
N. K. Kharchev ◽  
D. G. Vasilkov
Keyword(s):  
Microwave Power ◽  
Plasma Heating ◽  
Ecr Plasma

Low Temperature Silicon Oxidation With Electron Cyclotron Resonance Oxygen Plasma

1991 ◽  
Vol 235 ◽  
Author(s):  
K. T. Sung ◽  
S. W. Pang
Keyword(s):  
Low Temperature ◽  
Microwave Power ◽  
Cyclotron Resonance ◽  
Oxygen Plasma ◽  
Permanent Magnets ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Rf Power ◽  
Source Distance ◽  
Ecr Source

ABSTRACTSilicon was oxidized at low temperature with an oxygen plasma generated by an electron cyclotron resonance (ECR) source. The ECR source utilized a multicusp magnetic field formed by permanent magnets. Microwave power at 2.45 GHz was applied to the source and if power at 13.56 MHz was applied to the sample stage. Si oxidation was studied as a function of source distance, pressure, microwave power, and rf power. The oxide thickness increases with microwave and rf power but decreases with source distance. The oxidation rate increases with pressure up to 12 mTorr, men decreases at higher pressure. The relative emission intensities in the plasma monitored using optical emission spectroscopy showed similar dependence on the source distance and microwave power. Oxidation temperature was estimated to be <100°C. Using ellipsometry and X-ray photoelectron spectroscopy, the oxidized films were found to be close to that of thermal oxide with refractive index at 1.45 and oxygen to silicon ratio of 2. From the current-voltage and capacitance-voltage measurements, the breakdown fields of these oxide films were 6.3 MV/cm and the fixed charge densities were 7×1010 cm−2.

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