Irradiation Effects on the Interfacial Adhesion Between Ti Films and SiO2 Substrate

1988 ◽  
Vol 119 ◽  
Author(s):  
Guoan Cheng ◽  
Baixin Liu ◽  
Hengde Li
Keyword(s):  
Adhesive Strength ◽  
Interfacial Adhesion ◽  
Ion Irradiation ◽  
Threshold Dose ◽  
Ion Energy ◽  
Sio2 Substrate ◽  
Argon Ions ◽  
Argon Ion ◽  
Thermodynamics Of Solids ◽  
Ti Films

AbstractThe interfacial adhesion of Ti films on SiO2 substrate was studied by room temperature argon ion irradiation. Range of ion energy was chosen from 100 to 300 keV. Adhesive strength was measured by scratching test. For Ti/SiO2 pair irradiated by 100 keV argon ions, the adhesion was easier to enhance and much greater strength was obtained than that irradiated by 300 keV argon ions. The threshold dose also increased with the increasing of ion energy. The adhesive strength and the threshold dose increased when the metallizing temperatures were higher. Rutherford backscattering spectra(RBS) showed that a transition layer of about 10 nm thick was formed in Ti/SiO2 interface region after irradiation to a dose of 5X1016 Ar/cm2, indicating some chemical reaction has probably taken place. The experimental results are discussed in terms of thermodynamics of solids.

ECR Plasma Oxidation: Dependence on Energy of Argon Ion

1999 ◽  
Vol 585 ◽  
Author(s):  
S. Matsuo ◽  
M. Yamamoto ◽  
T. Sadoh ◽  
T. Tsurushima ◽  
D. W. Gao ◽  
...  
Keyword(s):  
Growth Rate ◽  
Flow Rate ◽  
Microwave Power ◽  
Electron Cyclotron Resonance ◽  
Ion Irradiation ◽  
Oxide Films ◽  
Ecr Plasma ◽  
Second Growth ◽  
Argon Ions ◽  
Argon Ion

AbstractEffects of ion-irradiation on oxidation of silicon at low temperatures (130°C) in an argon and oxygen mixed plasma excited by electron cyclotron resonance (ECR) interaction are investigated. First, dependence of energy and flux of incident ions on the flow rate and the microwave power is evaluated. It is shown that the flow rate and the microwave power are key parameters for controlling the energy and the flux of incident ions, respectively. Second, growth kinetics of the oxide films are studied. The growth rate depends on the energy and the flux of argon ions irradiated to the substrate, and the growth thickness increases proportionally to the root square of the oxidation time. Thus, the growth rate is limited by diffusion of oxidants enhanced by irradiation with argon ions. The effect of substrate bias on oxidation characteristics is also discussed. The electrical properties of the oxide films are improved by increasing the bias. The improvement is due to the reduction of damage at the surface of the substrate induced by the irradiation.

scholarly journals Quantifying the Order of Spontaneous Ripple Patterns on Ion-Irradiated Si(111)

2005 ◽  
Vol 908 ◽  
Author(s):  
H. Bola George ◽  
Ari-David Brown ◽  
Matthew R. McGrath ◽  
Jonah D. Erlebacher ◽  
Michael J. Aziz
Keyword(s):  
Figure Of Merit ◽  
Defect Density ◽  
Ion Irradiation ◽  
Topological Defects ◽  
Morphological Instability ◽  
Ion Energy ◽  
Lithographic Patterning ◽  
Ripple Patterns ◽  
Argon Ion ◽  
Degree Of Order

AbstractUniform keV ion irradiation causes a morphological instability known to result in the spontaneous formation of topographic ripple and dot patterns. The degree of order of these patterns, which has important implications for non-lithographic patterning applications, varies markedly with fabrication conditions. We investigate the influence of systematic variations of fabrication conditions, including current density, ion fluence and ion energy, on the degree of order of argon ion bombarded Si(111) surfaces. For quantifying order in sputter rippled topographic images, we develop an algorithm that evaluates the density of topological defects, such as ripple bifurcations and terminations, and suitably normalizes the result in order to present a scalar figure of merit: the normalized defect density. We discuss fabrication conditions that lead to extremely well ordered dot and ripple patterns upon irradiation.

Properties of Al2O3 films prepared by argon ion assisted deposition

1994 ◽  
Vol 9 (10) ◽  
pp. 2688-2694 ◽  
Author(s):  
Mansour S. Al-Robaee ◽  
Ghanashyam M. Krishna ◽  
G.N. Subanna ◽  
Narasimha K. Rao ◽  
S. Mohan
Keyword(s):  
Refractive Index ◽  
Current Density ◽  
Ion Beam ◽  
Ion Energy ◽  
Argon Ions ◽  
Beam Parameters ◽  
Substrate Temperatures ◽  
Argon Ion ◽  
Al2o3 Films ◽  
Deposited Films

Aluminum oxide films have been prepared by ion assisted deposition using argon ions with energy in the range 300 to 1000 eV and current density in the range 50 to 220 μA/cm2. The influence of ion energy and current density on the optical and structural properties has been investigated. The refractive index, packing density, and extinction coefficient are found to be very sensitive to the ion beam parameters and substrate temperatures. The as-deposited films were found to be amorphous and could be transformed into crystalline phase on annealing. However, the crystalline phases were different in films prepared at ambient and elevated substrate temperatures.

scholarly journals EFFECT OF ARGON-ION IRRADIATION ON CAVITY FORMATION AND EVOLUTION IN 18Cr10NiTi AUSTENITIC STEEL

2020 ◽  
pp. 27-32
Author(s):  
G.D. Tolstolutskaya ◽  
S.A. Karpov ◽  
A.S. Kalchenko ◽  
I.E. Kopanets ◽  
A.V. Nikitin ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Dose Range ◽  
Swelling Behavior ◽  
Transmission Electron ◽  
Formation And Evolution ◽  
Helium Implantation ◽  
Argon Ions ◽  
Lower Temperature ◽  
Average Size ◽  
Argon Ion

The swelling behavior of 18Cr10NiTi austenitic stainless steel irradiated with energetic Ar-ions in the dose range of 40…105 displacements per atom (dpa) with simultaneously implanted argon to the levels of 0.08…6.3 at.% at temperatures of 550…700 ºC was investigated. Transmission electron microscopy (TEM) has been used to study the microstructure evolution and to determine the dependence of swelling on the damage and Ar concentration. It is shown that the highest density and average size of the cavities was observed in the region of the calculated peak damage and Ar concentration. Argon was found to promote cavity swelling at lower temperature. At simultaneous creation of defects and argon implantation it was found a shift of swelling curve to higher temperatures compared to metallic-ion irradiation. The cavity swelling behavior of an austenitic 18Cr10NiTi steel irradiated with energetic argon ions are compared with those resulting from helium implantation.

Retention coefficients and thermal release profiles of ion-injected argon from silicates and iron

1970 ◽  
Vol 48 (12) ◽  
pp. 1472-1479
Author(s):  
Harry C. Lord III
Keyword(s):  
Volume Diffusion ◽  
Ion Irradiation ◽  
Defect Diffusion ◽  
Substrate Composition ◽  
Retention Coefficient ◽  
Thermal Release ◽  
Argon Concentration ◽  
Cold Rolled ◽  
Argon Ions ◽  
Release Profiles

Thermal release profiles and retention coefficients of injected argon ions were investigated as functions of substrate composition and prior ion-irradiation history. Samples of forsterite, enstatite, oligoclase, obsidian, and cold-rolled steel were irradiated with various sequences of 1 keV H+, 4 keV He+, and 40 keV Ar+. The release temperature of the maximum argon concentration was found to be a function of incident Ar+ dose and pre-irradiation history but not substrate composition. The hydrogen or helium pre-irradiation converted the volume diffusion argon release to a low temperature defect diffusion release. An increase in the incident dose of Ar+ ions resulted in increasing the percentage of the argon released by defect diffusion, and also decreased the argon retention coefficient.

Synthesis of Crystallized TiNi Films by Ion Irradiation

2012 ◽  
Vol 78 ◽  
pp. 87-91
Author(s):  
Noriaki Ikenaga ◽  
Yoichi Kishi ◽  
Zenjiro Yajima ◽  
Noriyuki Sakudo
Keyword(s):  
Shape Memory ◽  
Crystallization Temperature ◽  
Ion Irradiation ◽  
Deposition Process ◽  
Plasma Potential ◽  
Micro Electro Mechanical Systems ◽  
Ion Energy ◽  
Crystal Film ◽  
Irradiation Energy ◽  
New Apparatus

TiNi is well known as a typical shape-memory alloy, and is expected to be a promising material for micro actuators. In order to realize micro electro mechanical systems (MEMS) with this material, we have to get thin crystal film of the material, since the shape-memory property appears only when the structure is crystalline. In our previous studies we developed a new apparatus as well as a new deposition process for lowering the crystallization temperature by using ion irradiation. In addition, we have found that the deposited film by the process can be crystallized at very low temperature (below 473 K) without annealing but with simultaneous irradiation of Ar ions during sputter-deposition. In this study, we aim for the realization of crystallized TiNi film, which is deposited on Si substrate below 373 K substrate temperature. In order to realization the purpose, we have revealed the effect of Ar ion energy on lowering the crystallization temperature. The ion energy is measured with a quadrupole mass spectrometer (QMS) having an ion energy analyzer. The deposited TiNi films are examined with an X-ray diffraction (XRD). We found the plasma potential against the reactor chamber is important to be considered in the ion irradiation energy. The effects of ion energy for the crystallization of TiNi film are discussed.

The effect of argon ion irradiation on the internal friction of gold

1968 ◽  
Vol 16 (8) ◽  
pp. 997-1008 ◽  
Author(s):  
D.C Loebach ◽  
P Bowden ◽  
H.K Birnbaum
Keyword(s):  
Internal Friction ◽  
Ion Irradiation ◽  
Argon Ion

Dry Etching of Indium Phosphide

1992 ◽  
Vol 262 ◽  
Author(s):  
P. Bond ◽  
P. Sengupta ◽  
Kevin G. Orrman-Rossiter ◽  
G. K. Reeves ◽  
P. J. K. Paterson
Keyword(s):  
Indium Phosphide ◽  
Etch Rate ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Building Blocks ◽  
Photonic Devices ◽  
Ion Energy ◽  
Growth Area ◽  
Argon Ion ◽  
Main Growth

ABSTRACTIndium Phosphide (InP) based multilayer structures are becoming increasingly important in the semiconductor industry with optoelectronic applications being the main growth area. Mesa type structures with finely controlled width and etch angle, often form the building blocks for many of these photonic devices. Traditional wet etching techniques have often proved to be inadequate for the required anisotropie removal of material. This paper presents the results of etching semi-insulating InP (100) using a combination of an Argon ion beam and a reactive gas, CCl2F2 (Freon 12). It was found that the etch rate was enhanced by increasing the ion energy and by the addition of CCl2F2. Auger electron spectroscopy revealed that the increased etch rate was accompanied by an increase in the surface indium concentration and at low ion beam energies carbon build-up retarded the etch rate. The optimum etch angle to fabricate 3μm waveguides was found to be 22° to the surface normal, however Schottky contacts to these structures were unsuccessful.

Anatase TiO2-based two-dimensional electron gases generated by low-energy argon-ion irradiation

2018 ◽  
Vol 112 (24) ◽  
pp. 241601
Author(s):  
Xi Yan ◽  
Hongrui Zhang ◽  
Hui Zhang ◽  
Tahira Khan ◽  
Jine Zhang ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Anatase Tio2 ◽  
Low Energy ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases ◽  
Argon Ion
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