On the Mechanical Integrity of Ultra Low Dielectric Constant Materials for Use in Ulsi Beol Structures

2000 ◽  
Vol 612 ◽  
Author(s):  
E. O. Shaffer ◽  
K. E. Howard ◽  
M. E. Mills ◽  
P.H. Townsend
Keyword(s):  
Dielectric Constant ◽  
Material Properties ◽  
Process Integration ◽  
Effective Properties ◽  
Material Selection ◽  
Selection Process ◽  
Full Density ◽  
Interlayer Dielectric ◽  
Mechanical Integrity ◽  
Low K

AbstractAdherence to the prescript of Moore's law continues to drive materials development for new and lower dielectric constant materials for use as back-end-of-line (BEOL) interlayer dielectric in advanced logic IC's. As is the case for the current generation of low-K materials (<3.0), these ultra-low K materials (<2.2) will need to meet the variety of integration and reliability requirements for successful product development. Excluding the incorporation of fluorine to lower the material polarity, further reductions of dielectric constant can only be achieved by reduced density. Based upon the industry's experience with the current class of full density dielectrics, process integration may be challenging for ultra-low K materials. This anticipated difficulty derives from the profound differences in material properties, e.g. mechanical integrity, as one lowers the material density, which in turn confounds existing manufacturing processes that have evolved over 35 years based on silicon dioxide.Minimizing these material and processing differences by extending leveraged learning from previous technology nodes is essential for timely and cost-efficient development cycles. As a result, material selection of a full density low-K is somewhat influenced by the ability of that material to be extended into future generations. Understanding how the material properties will change as its density is lowered is vital to this selection process. In this paper, we present a summary of models for calculating effective properties as a function of density and apply these to current low-K materials with emphasis on mechanical integrity. We will also review experimental methods for measuring the mechanical integrity of ultra-low K materials and compare the results to the various models described herein.

Material Properties of a SiOC Low Dielectric Constant Film with Extendibility to k < 2.7

2000 ◽  
Vol 612 ◽  
Author(s):  
Eugene S. Lopata ◽  
Lydia Young ◽  
John T. Felts
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Material Properties ◽  
Low Dielectric Constant ◽  
Adhesion Properties ◽  
Interlayer Dielectric ◽  
Good Thermal Stability ◽  
Low Dielectric ◽  
Excellent Adhesion ◽  
Low K

AbstractA plasma deposited SiOC very low k (VLK) interlayer dielectric (ILD) film has been developed which can be tuned to 2.5 = k = 3.0, demonstrates very good thermal stability, excellent adhesion properties, acceptable hardness, and an indication that it may be extendible to k < 2.5. This paper will disclose properties of this SiOC film which are important to a VLK ILD application.

Thermal stability and structural evolution of low-K Fluorinated amorphous carbon during thermal annealing

1998 ◽  
Vol 511 ◽  
Author(s):  
Hongning Yang ◽  
Douglas J. Tweet ◽  
Yanjun Ma ◽  
Tue Nguyen ◽  
David R. Evans ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Thermal Annealing ◽  
Structural Evolution ◽  
Fluorine Concentration ◽  
Interlayer Dielectric ◽  
Profound Impact ◽  
Initial Stage ◽  
Stress Changes ◽  
Low K

ABSTRACTHighly crosslinked a-F:C films can undergo a significant change after thermal annealing, where the film expands by ∼3%, the density reduces by ∼10% and the internal stress changes from compressive to tensile. The loss of fluorine concentration and the reduction of CF. are accompanied by the transition of (C-C, sp3) to (C=C, sp2) groups. After annealing, the dielectric constant is reduced and the leakage current increases slightly. Most importantly, these changes occur only at the initial stage of annealing. After the initial annealing, the a-F:C film tends to be thermally stable and retains reasonably good electrical properties as a low-k interlayer dielectric. The profound impact of these results on Cu/a-F:C integration will be briefly discussed.

Effects of Supercritical CO2 Drying and Photoresist Strip on Low-k Films

2003 ◽  
Vol 766 ◽  
Author(s):  
R.F. Reidy ◽  
Zhengping Zhang ◽  
R.A. Orozco-Teran ◽  
B.P. Gorman ◽  
D.W. Mueller
Keyword(s):  
Dielectric Constant ◽  
Porous Materials ◽  
Transport Properties ◽  
Supercritical Co2 ◽  
Polar Molecule ◽  
Interlayer Dielectric ◽  
Highly Porous Materials ◽  
Supercritical Co2 Drying ◽  
Low K ◽  
Highly Porous

AbstractFuture interlayer dielectric (ILD) requirements necessitate reductions in dielectric constant to 2.1 within four years. Due to gaseous-like transport properties and near liquid-like densities, supercritical methods have been developed to dry and strip resist from these highly porous materials. Although a non-polar molecule, the solvating capability of supercritical CO2 (SCCO2) can be tailored by varying pressure, temperature, and co-solvents. This flexibility has been employed to remove photoresist and moisture from porous low-k films. The results of these experiments have been characterized using FTIR, ellipsometry, and SEM.

scholarly journals The Evolution of Organosilicon Precursors for Low-k Interlayer Dielectric Fabrication Driven by Integration Challenges

Materials ◽  
2021 ◽  
Vol 14 (17) ◽  
pp. 4827
Author(s):  
Nianmin Hong ◽  
Yinong Zhang ◽  
Quan Sun ◽  
Wenjie Fan ◽  
Menglu Li ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Data Storage ◽  
Integrated Circuit ◽  
Porous Silica ◽  
Dielectric Materials ◽  
Interlayer Dielectric ◽  
Damascene Process ◽  
Key Issues ◽  
Deposition Processes ◽  
Low K

Since the application of silicon materials in electronic devices in the 1950s, microprocessors are continuously getting smaller, faster, smarter, and larger in data storage capacity. One important factor that makes progress possible is decreasing the dielectric constant of the insulating layer within the integrated circuit (IC). Nevertheless, the evolution of interlayer dielectrics (ILDs) is not driven by a single factor. At first, the objective was to reduce the dielectric constant (k). Reduction of the dielectric constant of a material can be accomplished by selecting chemical bonds with low polarizability and introducing porosity. Moving from silicon dioxide, silsesquioxane-based materials, and silica-based materials to porous silica materials, the industry has been able to reduce the ILDs’ dielectric constant from 4.5 to as low as 1.5. However, porous ILDs are mechanically weak, thermally unstable, and poorly compatible with other materials, which gives them the tendency to absorb chemicals, moisture, etc. All these features create many challenges for the integration of IC during the dual-damascene process, with plasma-induced damage (PID) being the most devastating one. Since the discovery of porous materials, the industry has shifted its focus from decreasing ILDs’ dielectric constant to overcoming these integration challenges. More supplementary precursors (such as Si-C-Si structured compounds), deposition processes (such as NH3 plasma treatment), and post porosity plasma protection treatment (P4) were invented to solve integration-related challenges. Herein, we present the evolution of interlayer dielectric materials driven by the following three aspects, classification of dielectric materials, deposition methods, and key issues encountered and solved during the integration phase. We aim to provide a brief overview of the development of low-k dielectric materials over the past few decades.

Novel Materials as Interlayer Low-K Dielectrics for CMOS Interconnect Applications

2011 ◽  
Vol 110-116 ◽  
pp. 5380-5383
Author(s):  
Tejas R. Naik ◽  
Veena R. Naik ◽  
Nisha P. Sarwade
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuits ◽  
Dielectric Materials ◽  
Low Dielectric Constant ◽  
Interlayer Dielectric ◽  
Novel Materials ◽  
Low Dielectric ◽  
Processing Properties ◽  
New Generation ◽  
Low K

Scaling down the integrated circuits has resulted in the arousal of number of problems like interaction between interconnect, crosstalk, time delay etc. These problems can be overcome by new designs and by use of corresponding novel materials, which may be a solution to these problems. In the present paper we try to put forward very recent development in the use of novel materials as interlayer dielectrics (ILDs) having low dielectric constant (k) for CMOS interconnects. The materials presented here are porous and hybrid organo-inorganic new generation interlayer dielectric materials possessing low dielectric constant and better processing properties.

Process Integration issues for Interlevel Dielectric Materials for Sub-quarter Micron Silicon Integrated Circuits

1998 ◽  
Vol 511 ◽  
Author(s):  
Vijay Parihar ◽  
R. Singh
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Process Integration ◽  
Dielectric Materials ◽  
New Approach ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
Silicon Integrated Circuits ◽  
Processing Techniques ◽  
Low K

ABSTRACTThe continued miniaturization towards sub-quarter micron feature size mandates the search for low dielectric constant interlayer dielectric materials. A large number of materials and processing techniques has been suggested, but so far none of the proposed dielectric materials as well as processing techniques have been integrated into standard integrated circuit processing. In this paper, a new approach has been formulated for integration of low-k dielectric materials for future integrated circuits.

Low Dielectric Constant Fluorinated Polyimides for Interlayer Dielectric Applications

1997 ◽  
Vol 476 ◽  
Author(s):  
John Pellerin ◽  
Robert Fox ◽  
Huei-Min Ho
Keyword(s):  
Dielectric Constant ◽  
Electrical Performance ◽  
Low Dielectric Constant ◽  
Interlayer Dielectric ◽  
Metal Structures ◽  
Single Level ◽  
Low Dielectric ◽  
Fluorinated Polyimide ◽  
Fluorinated Polyimides ◽  
Low K

AbstractThis paper presents the results of development, characterization and integration screening of low dielectric constant (low k) fluorinated polyimides for interlayer dielectric applications. Evolution of these materials has progressed with the intent of improving fundamental thin film properties, such as thermal stress behavior, modulus, CTE, and dielectric constant. Further refinements to fluorinated polyimides have been to improve their process compatibility and integration characteristics, primarily in the area of deep sub-micron gap filling. The avenues taken to attain these objectives will be illustrated.Subsequent integration of low k fluorinated polyimides has been achieved for a completed single-level metal BEOL test vehicle to highlight the impacts of the film's adhesion, mechanical and thermomechanical properties. In addition, the completed fluorinated polyimide single-level metal structures have been used to characterize electrical performance in contrast to single-level metal structures with TEOS dielectric. Intralevel capacitance and leakage current have been measured with dual comb and serpentine structures. Modeling has been applied to verify dielectric constant in submicron geometries from the capacitance measurements.

Integration Issues for Low Dielectric Constant Materials in each Generation of ULSI'S

1999 ◽  
Vol 565 ◽  
Author(s):  
Hideki Gomi ◽  
Koji Kishimoto ◽  
Tatsuya Usami ◽  
Ken-ichi Koyanagi ◽  
Takashi Yokoyama ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Silicon Oxide ◽  
Process Integration ◽  
Low Dielectric Constant ◽  
Next Generation ◽  
Hydrogen Silsesquioxane ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials ◽  
Fluorinated Silicon Oxide ◽  
Low K

AbstractThe technologies utilizing Fluorinated Silicon Oxide (FSG, k=3.6) and Hydrogen Silsesquioxane (HSQ, k=3.0) have been established for 0.25-μm and 0.18-μm generation ULSIs. However, low-k materials for the next generation ULSIs, which have a dielectric constant of less than 3.0, have not become mature yet. In this paper, we review process integration issues in applying FSG and HSQ, and describe integration results and device performance using Fluorinated Amorphous Carbon (a-C:F, k=2.5) as one of the promising low-k materials for the next generation ULSIs.

Integration Issues for Low Dielectric Constant Materials in each Generation of ULSI's

1999 ◽  
Vol 564 ◽  
Author(s):  
Hideki Gomi ◽  
Koji Kishimoto ◽  
Tatsuya Usami ◽  
Ken-ichi Koyanagi ◽  
Takashi Yokoyama ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Silicon Oxide ◽  
Process Integration ◽  
Low Dielectric Constant ◽  
Next Generation ◽  
Hydrogen Silsesquioxane ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials ◽  
Fluorinated Silicon Oxide ◽  
Low K

AbstractThe technologies utilizing Fluorinated Silicon Oxide (FSG, k=3.6) and Hydrogen Silsesquioxane (HSQ, k=3.0) have been established for 0.25-µm and 0.1 8-µm generation ULSIs. However, low-k materials for the next generation ULSIs, which have a dielectric constant of less than 3.0, have not become mature yet. In this paper, we review process integration issues in applying FSG and HSQ, and describe integration results and device performance using Fluorinated Amorphous Carbon (a-C:F, k=2.5) as one of the promising low-k materials for the next generation ULSIs.

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