scholarly journals Texture Variations in Sol-Gel Derived PZT Films on Substrates with Platinum Metallization

1994 ◽  
Vol 343 ◽  
Author(s):  
J.G.E. Gardeniers ◽  
M. Elwenspoek ◽  
C. Cobianu
Keyword(s):  
Metal Layer ◽  
Sol Gel ◽  
Annealing Treatment ◽  
X Ray Diffraction ◽  
Interface Composition ◽  
Lattice Constants ◽  
Pzt Film ◽  
Pzt Films ◽  
Pt Films ◽  
Surface Morphologies

ABSTRACTMetalorganic precursor solutions of composition Zr : Ti = 0.53 : 0.47 were used to spin-cast PZT layers on sputtered Pt films. After annealing at temperatures of 550 °C - 800 °C, the PZT films of tetragonal perovskite structure reproducibly showed different textures and surface morphologies, depending on whether or not a Ti layer was used as an adhesion layer for the Pt film. The texture differences were found to be independent of annealing treatment. It is argued that the observed texture differences are caused by a change in Pt-PZT interface composition, resulting from the diffusion of Ti into the Pt film during annealing; X-ray diffraction of an annealed Pt/Ti/SiO2/Si film combination provided evidence for a compound Pt3Ti. Annealing at 850 °C caused severe diffusion of Ti from the metal layer into the PZT film, leading to a tetragonal PZT layer with lattice constants corresponding to a Zr : Ti ratio of 30 : 70.

Preparation of PZT Ferroelectric Thin Films by Sol-Gel Process

2012 ◽  
Vol 204-208 ◽  
pp. 4207-4210 ◽  
Author(s):  
Yu Fei You ◽  
C. H. Xu ◽  
Jun Peng Wang ◽  
Yu Liang Liu ◽  
Jin Feng Xiao ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Pzt Ceramics ◽  
X Ray ◽  
Pzt Film ◽  
Sol Gel Process ◽  
Pzt Films ◽  
Pzt Ferroelectric Thin Films ◽  
Electronic Microscope

Sol-gel method is used for the formation of Pb(Zr0.63Ti0.37)O3(PZT) thin films. The initial films were formed with spin coating sol solution on silicon wafer and drying coated wet sol film at 300°C for 5min. This process was repeated for 1-4 times to obtain 4 initial films with different thicknesses. 4 initial films were annealed at 500°C for 2h to obtain PZT ceramics films. The morphologies of the surface and cross-section of PZT films were observed with a scanning electronic microscope (SEM). The phase structures of PZT films were analyzed using an X-ray diffraction meter (XRD). Experimental results show that PZT film prepared by coating wet sol on silicon once can be high smooth and compact film.

Giant Self-Polarization in FeRAM Element Based on Sol-Gel PZT Films

2015 ◽  
Vol 1729 ◽  
pp. 87-92
Author(s):  
L. A. Delimova ◽  
E. V. Guschina ◽  
V. S. Yuferev ◽  
I. V. Grekhov ◽  
N. V. Zaiceva ◽  
...  
Keyword(s):  
Bottom Electrode ◽  
Lattice Mismatch ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Polarization Switching ◽  
Driving Voltage ◽  
Lattice Constants ◽  
Modified Method ◽  
Pzt Film ◽  
Pzt Films

ABSTRACTIntegrated ferroelectric capacitors Pt/PZT/Pt/Ti/SiO2/Si with sol-gel deposited PZT films are studied. The (111) textured polycrystalline films are shown to have nonconductive PZT grain boundaries. The short-circuited photocurrents measured under illumination of the films by light with the quantum energy of 2.7 eV indicate the polarization inside the film directed from the top to the bottom electrode. Using the modified method of depolarization hysteresis loops, we found a non-switchable part of polarization which was measured to be -16 μC/cm2 and directed from the top to the bottom electrode. We consider this result to be a giant self-polarization and explain it in terms of flexoelectricity caused by lattice mismatch between the PZT and bottom Pt layers. The strain gradient across the PZT film thickness is estimated from the in-plane lattice constants measured in Pt and PZT films to be ∼103cm-1, which can produce the downward flexoelectric polarization of ∼14 μC/cm2, coinciding well with the measured one. Nonsymmetrical depolarization loops are found in the films when the polarization switching itself becomes more difficult under the negative or positive driving voltage. We show experimentally how depolarization with compensating bias or film illumination can affect the film polarization switching.

Microstructure and Optical Properties of ZnO-Doped CeO2 Thin Films Using Sol-Gel Method

2012 ◽  
Vol 486 ◽  
pp. 340-344
Author(s):  
Chun Hung Lai ◽  
Ching Fang Tseng ◽  
Wen Yu Hsu
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Sol Gel ◽  
Annealing Treatment ◽  
Annealed Film ◽  
X Ray Diffraction ◽  
Gel Method ◽  
Sol Gel Method ◽  
Recording Spectrophotometer ◽  
Surface Morphologies

This paper describes microstructure and optical characteristics of ZnO-doped CeO2thin films were deposited by sol-gel method with various preheating and annealing temperatures. Particular attention will be paid to the effects of an annealing treatment in air ambient on the physical properties. The deposited films were characterized using X-ray diffraction. The surface morphologies of annealed film were examined by scanning electron microscopy. Optical properties of the ZnO-doped CeO2thin films were obtained by UV-visible recording spectrophotometer. The dependence of the optical properties and microstructure characteristics on thermal treatment was also investigated.

Fabrication of Thick, Sol Gel Pzt Films: Applications to Macroscopic Piezoelectric Devices

1994 ◽  
Vol 360 ◽  
Author(s):  
D.A. Barrow ◽  
T.E. Petroff ◽  
M. Sayer
Keyword(s):  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Low Frequency ◽  
Lead Zirconate ◽  
Resonant Vibrations ◽  
Pzt Film ◽  
Sol Gel Process ◽  
Pzt Films ◽  
High Frequency Resonance ◽  
Piezoelectric Devices

AbstractLead zirconate titanate (PZT) films of up to 60 μm in thickness have been fabricated on a wide variety of substrates using a new sol gel process. The dielectric properties (∈ = 900), ferroelectric (Ec = 16 kV/cm and Pr = 35 μC/cm 2) and piezoelectric properties are comparable to bulk values. The characteristic Curie point of these films is at 420 °C. Piezoelectric actuators have been developed by depositing thick PZT films on both planar and coaxial substrates. Stainless steel cantilevers and optical fibres coated with a PZT film exhibit flexure mode resonant vibrations observable with the naked eye. A low frequency in-line fibre optic modulator has been developed using a PZT coated optical fibre. The high frequency resonance of a 60 μm film on a aluminum substrate has been observed.

Dielectric Properties of Sol-Gel Derived MgAl2O4 Thin Films

2012 ◽  
Vol 151 ◽  
pp. 314-318
Author(s):  
Ching Fang Tseng ◽  
Cheng Hsing Hsu ◽  
Chun Hung Lai
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Dissipation Factor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Preheating Temperature ◽  
Surface Morphologies

This paper describes microstructure characteristics of MgAl2O4 thin films were deposited by sol-gel method with various preheating temperatures and annealing temperatures. Particular attention will be paid to the effects of a thermal treatment in air ambient on the physical properties. The annealed films were characterized using X-ray diffraction. The surface morphologies of treatment film were examined by scanning electron microscopy and atomic force microscopy. At a preheating temperature of 300oC and an annealing temperature of 700oC, the MgAl2O4 films with 9 μm thickness possess a dielectric constant of 9 at 1 kHz and a dissipation factor of 0.18 at 1 kHz.

Preparation of PbZrxTi1−xO3 Films on Si Substrates Using SrTiO3 Buffer Layers

1994 ◽  
Vol 361 ◽  
Author(s):  
Eisuke Tokumitsu ◽  
Kensuke Itani ◽  
Bum-Ki Moon ◽  
Hiroshi Ishiwara
Keyword(s):  
Buffer Layer ◽  
Secondary Ion Mass Spectrometry ◽  
Sol Gel ◽  
Buffer Layers ◽  
Si Substrates ◽  
Pzt Film ◽  
Pzt Films ◽  
Evaporation Technique ◽  
Gel Technique ◽  
Secondary Ion

ABSTRACTWe report the preparation of PbZrxTi1−xO3 (PZT) films on Si substrates with a SrTiO3 (STO) buffer layer. STO buffer layers and PZT films were formed on Si substrates by the electron-beam assisted vacuum evaporation technique and sol-gel technique, respectively. By evaporating a thin (8nm) metal Sr layer prior to the STO deposition, which deoxidizes the SiO2 layer at the Si surface, (100)- and (111)-oriented STO thin films can be grown on Si(100) and (111) substrates, respectively. It is shown that a strongly (100)-oriented PZT film is grown on STO(100)/Si(100), whereas a strongly (111)-oriented PZT film is obtained on STO(111)/Si(111). It is also found that the STO buffer layer remains intact even after the PZT deposition. Secondary ion mass spectrometry (SIMS) analysis showed that the STO barrier layer was effective in preventing diffusion of Pb into the Si substrate.

Orientation Selection in Sol-Gel Derived PZT Thin Films

2000 ◽  
Vol 655 ◽  
Author(s):  
G. J. Norga ◽  
Laura Fé
Keyword(s):  
Film Thickness ◽  
Sol Gel ◽  
Electrode System ◽  
Film Properties ◽  
Orientation Selection ◽  
Pzt Film ◽  
Pzt Films ◽  
Basic Studies ◽  
Excessive Oxygen ◽  
Real Temperature

AbstractMotivated by the growing impact of PZT film orientation on ferroelectric film properties as film thickness is scaled down, we present basic studies on orientation selection in sol-gel derived PZT films, using pre-annealed Pt/Ti electrode layers as a model electrode system. FTIR was used to study, on a real temperature scale, chemical reactions in the films during the initial thermal steps prior to crystallization. We found that the chemical structure of the pyrolyzed film has a much larger impact on orientation selection than has previously been realized. In addition to pyrolysis conditions, the ambient used for the crystallization step was found to play a crucial role in orientation selection. As film thickness decreases, excessive oxygen incorporation in the films is seen to result in the loss of the preferential (111) texture when crystallization is performed in air. By performing crystallizations in N2, 40 nm thick PZT films with a strongly preferential (111) orientation could be obtained.

The Influence of the Post-Annealing Temperature on the Crystalline Orientation and the Crystallinity of PZT Films

2012 ◽  
Vol 490-495 ◽  
pp. 3845-3849
Author(s):  
Jing Wan ◽  
Cheng Tao Yang ◽  
Yang Gao
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Process ◽  
Process Conditions ◽  
X Ray Diffraction ◽  
Rapid Thermal Annealing Process ◽  
Pzt Film ◽  
Pzt Films ◽  
Thermal Annealing Process ◽  
Nucleation And Growth Mechanism

In this article, based on nucleation and growth mechanism of films, different process conditions of rapid thermal annealing (RTA) had been investigated to attain different orientation and the crystallinity of PZT film. At first, the PZT films had been fabricated by magnetron sputtering on Si/SiO2/Ti/Pt substrates, then crystallized by different stepped rapid thermal annealing process. X-ray diffraction (XRD) was used to analyze the crystal structures of the films and scanning electron microscope (SEM) was used to analyze the surface morphology of the films. As a conclusion about the research is that it is good for controlling the crystallographic orientation and enhancing the crystallinity of PZT film by different stepped rapid thermal annealing process

Growth of the Sol-Gel Based ZnO:Al Thin Films with High Doping Concentration

2012 ◽  
Vol 485 ◽  
pp. 144-148
Author(s):  
Jian Lin Chen ◽  
Yan Jie Ren ◽  
Jian Chen ◽  
Jian Jun He ◽  
Ding Chen
Keyword(s):  
Thin Films ◽  
Doping Concentration ◽  
Sol Gel ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
High Doping Concentration ◽  
Doped Zno ◽  
Surface Morphologies

Preferentially oriented Al-doped ZnO thin films with doping concentration of 1, 2, 3, 5 and 10 mol% respectively were prepared on glass substrates via sol-gel route. The crystallinity of films was characterized by X-ray diffraction and the surface morphologies were observed by scanning electron microscopy. The results show that ZnO:Al films at low doping concentration (1, 2 mol%) grow into dense homogenous microstructure. However, as for high doping concentration (3, 5, 10 mol%), Al3+ precipitate in the form of amorphous Al2O3 and ZnO:Al films exhibit heterogeneous nucleation and exceptional growth of the big plate-like crystals at the interface of the amorphous Al2O3 and ZnO:Al matrix.

Fabrication and electrical properties of 0.7BiFeO3-0.3PbTiO3 films on stainless steel by the sol-gel method

2012 ◽  
Vol 1449 ◽  
Author(s):  
Chen Zhao ◽  
Dan Jiang ◽  
Shundong Bu ◽  
Jinrong Cheng
Keyword(s):  
Stainless Steel ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Sem Images ◽  
Gel Method ◽  
X Ray ◽  
Sol Gel Method ◽  
Pt Films ◽  
Steel Substrates

ABSTRACTFerroelectric 0.7BiFeO3-0.3PbTiO3 (BFO-PT) films were deposited on stainless steel substrates by the sol-gel method. A thin layer of PbTiO3 (PT) was introduced between the substrates and BFO-PT films in order to decrease the annealing temperature of BFO-PT films. X-ray diffraction analysis reveals that BFO-PT films could be well crystallized into the perovskite structure at about 575 oC. Scanning electron microscope (SEM) images show that BFO-PT thin films have grain size of about 50∼60 nm. Our results indicated BFO-PT films deposited on stainless steel substrates maintained the excellent ferroelectric properties with remnant polarization of about 40∼50 μC/cm2.

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