The Effects of Cu on Field Aided Lateral Crystallization (FALC) of Amorphous Silicon (a-Si) Films

2001 ◽  
Vol 664 ◽  
Author(s):  
Jae-Bok Lee ◽  
Chul-Ho Kim ◽  
Se-Youl Kwon ◽  
Duck-Kyun Choi
Keyword(s):  
Electric Field ◽  
Amorphous Silicon ◽  
Applied Field ◽  
Polycrystalline Silicon ◽  
Annealing Temperature ◽  
Negative Electrode ◽  
Free Region ◽  
Lateral Crystallization ◽  
Novel Concept ◽  
Si Films

ABSTRACTA novel concept of field aided lateral crystallization (FALC) and the effects of Cu on FALC of amorphous silicon (a-Si) were investigated. Cu was found to induce the lateral crystallization toward a metal-free region as well as the crystallization of a-Si in contact with Cu. In particular, the lateral crystallization caused by Cu was noticeably accelerated at the negative electrode side in every pattern with an aid of electric field, while it was retarded at the positive electrode side. The occurrence of Cu-FALC phenomenon was interpreted in terms of dominant diffusing species (DDS) in the reaction between metal and Si. The FALC velocity increased with the applied field intensity and the annealing temperature. The crystallization of a-Si was achieved at temperatures as low as 375°C when the annealing time increased in the presence of high electric field, above 30V/cm. Therefore, we could demonstrate the possibility of low temperature (<500°C) polycrystalline silicon (poly-Si) crystallization using Cu as a mediator in FALC technology.

A New Field-Aided Germanium-Induced Lateral Crystallization of Silicon

2001 ◽  
Vol 664 ◽  
Author(s):  
Kianoush Naeli ◽  
Shamsoddin Mohajerzadeh ◽  
Ali Khakifirooz ◽  
Saber Haji ◽  
Ebrahim A. Soleimani
Keyword(s):  
Electric Field ◽  
Grain Growth ◽  
Negative Electrode ◽  
Crystallization Rate ◽  
Lateral Growth ◽  
Annealing Temperatures ◽  
Lateral Crystallization ◽  
Si Films ◽  
First Time ◽  
Induced Crystallization

ABSTRACTThe effect of an electric field on germanium-seeded lateral crystallization of a-Si is studied for the first time and compared to this effect in Ni-induced lateral growth. While the crystallization rate is lower when Ge is used as the nucleation seed and annealing should be done at higher temperatures, filed-aided crystallization shows a similar behavior to that observed for Ni-induced crystallization. Optical microscopy results indicate that grain growth starting from the negative electrode occurs in Si films at annealing temperatures higher than 480°C, while the applied electric field ranges form 200 to 1400V/cm. SEM was also used to confirm the crystallinity of the films.

Effect of Ni and Al on the Low-Temperature Field Aided Lateral Crystallization (FALC)

1998 ◽  
Vol 508 ◽  
Author(s):  
Sang-Hyun Park ◽  
Seung-Ik Jun ◽  
Chan-Jae Lee ◽  
Yong-Ho Yang ◽  
Duck-Kyun Choi
Keyword(s):  
Low Temperature ◽  
Electric Field ◽  
Crystallization Temperature ◽  
Metal Induced Crystallization ◽  
Crystallization Method ◽  
Free Region ◽  
Lateral Crystal ◽  
Lateral Crystallization ◽  
Si Films ◽  
Temperature Crystallization

AbstractThere have been many reports on the low temperature crystallization of amorphous silicon films by introducing a trace amount of metal impurity for low temperature poly-Si TFTs applications. MIC (Metal Induced Crystallization) uses various metals, to lower crystallization temperature. In this study, a new crystallization method called FALC (Field Aided Lateral Crystallization) in which an electric field is applied during the crystallization was explored. Among possible alloying elements with Si, Ni and Al were selected to compare the effects of these impurities on the FALC.A trace of Ni lowered the crystallization temperature of a-Si down to 5001C and induced lateral crystal growth along the electric field into the metal free region. But Al exhibited no such effect. A new crystallization method, FALC, showed considerably enhanced speed of lateral crystallization and a strong preferred orientation in crystallized Si-films.

Formation of Large, Orientation-Controlled, Nearly Single Crystalline Si Thin Films on SiO2 Using Contact Printing of Rolled and Annealed Nickel Tapes

2003 ◽  
Vol 762 ◽  
Author(s):  
Hwang Huh ◽  
Jung H. Shin
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
Amorphous Silicon ◽  
Tem Analysis ◽  
Contact Printing ◽  
Single Crystalline ◽  
High Resolution Tem ◽  
Lateral Crystallization ◽  
Si Films

AbstractAmorphous silicon (a-Si) films prepared on oxidized silicon wafer were crystallized to a highly textured form using contact printing of rolled and annealed nickel tapes. Crystallization was achieved by first annealing the a-Si film in contact with patterned Ni tape at 600°C for 20 min in a flowing forming gas (90 % N2, 10 % H2) environment, then removing the Ni tape and further annealing the a-Si film in vacuum for2hrsat600°C. An array of crystalline regions with diameters of up to 20 μm could be formed. Electron microscopy indicates that the regions are essentially single-crystalline except for the presence of twins and/or type A-B formations, and that all regions have the same orientation in all 3 directions even when separated by more than hundreds of microns. High resolution TEM analysis shows that formation of such orientation-controlled, nearly single crystalline regions is due to formation of nearly single crystalline NiSi2 under the point of contact, which then acts as the template for silicide-induced lateral crystallization. Furthermore, the orientation relationship between Si grains and Ni tape is observed to be Si (110) || Ni (001)

A Study on the Metal Induced Lateral Crystallization Behavior of Amorphous Silicon Thin Films

1996 ◽  
Vol 441 ◽  
Author(s):  
Byung-Il Lee ◽  
Kwang-Ho Kim ◽  
Won-Cheol Jeong ◽  
Pyung-Su Ahn ◽  
Jin-Wook Shin ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Crystallization Behavior ◽  
Crystallization Rate ◽  
External Stress ◽  
Tem Analysis ◽  
Silicon Thin Films ◽  
Amorphous Si ◽  
Lateral Crystallization ◽  
Si Films

AbstractBasic mechanisms for both Ni- and Pd-metal induced lateral crystallization (MILC) are investigated. For both cases, tiny silicides were formed under the metal deposited area, and propagated toward amorphous Si films leaving crystallized Si behind at temperatures as low as 500 °C. Ni-MILC was influenced by Pd such that the lateral crystallization rate was enhanced, and the temperature for the lateral crystallization was lowered to 450 °C. Through TEM analysis and external stress experiments, it was found that the enhancement of the lateral crystallization rate was closely related to the compressive stress generated by the formation of nearby Pd2Si.

Dopant Segregation at Polycrystalline Silicon Grain Boundaries in Device Fabrication Processes

1989 ◽  
Vol 164 ◽  
Author(s):  
M. Itoh ◽  
I. Aikawa ◽  
N. Hirashita ◽  
T. Ajioka
Keyword(s):  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
Annealing Temperature ◽  
Segregation Ratio ◽  
Device Fabrication ◽  
Phosphorus Concentration ◽  
Cross Sectional ◽  
Dopant Segregation ◽  
Linear Relationships ◽  
Si Films

AbstractThe dopant segregation at the polycrystalline silicon grain boundaries in device fabrication processes has been studied with a new approach using spreading resistance(SR) measurement, SIMS and cross-sectional TEM(XTEM). Phosphorus implanted LPCVD poly-Si films were annealed at 900°C-1000°C in N2 for 30min. Electrically active dopant concentrations obtained from SR measurements are constant in depth within the poly-Si films. On the other hand, the phosphorus concentration measured by SIMS is found to increase with increasing depth and to have linear relationships to reciprocal grain sizes observed by XTEM for all poly-Si films. The linear relationship indicates that the number of segregated phosphorus atoms per unit grain surface area at the grain boundaries is uniform throughout poly-Si films. Both phosphorus concentrations in the grains and at the grain boundaries are evaluated. The heat of segregation of 1.7eV is obtained from the annealing temperature dependence of the segregation ratio. Our results indicate that carrier concentration in the poly-Si film is more sensitive to annealing temperature in device fabrication processes. The carries concentration is determined by kinetics rather than by equilibrium segregation of dopants.

Nickel Induced Lateral Crystallization of Amorphous Silicon Film by Electroless Planting

2009 ◽  
Vol 66 ◽  
pp. 147-150
Author(s):  
Wei Li ◽  
Dong Lin Xia ◽  
Ming Xia Song ◽  
Zhen Zhong Zhang ◽  
Jia Miao Ni ◽  
...  
Keyword(s):  
Electric Field ◽  
Amorphous Silicon ◽  
Silicon Film ◽  
Electroless Nickel ◽  
Nitrogen Atmosphere ◽  
Nickel Film ◽  
Glass Substrates ◽  
Amorphous Silicon Film ◽  
Lateral Crystallization ◽  
Nickel Distribution

A novel deposition way of nickel film for crystallization amorphous silicon film is introduced. Electroless nickel planting is a convenient and inexpensive way to deposit nickel without using the electric field or any large facility. A 200 nm nickel film is deposited on the glass substrates and then a 300nm a-Si film is deposited on the nickel film with a horizontal electric field assisted to enhance amorphous silicon crystallization. The bi-layer film is annealed at 500°C for several hours in the nitrogen atmosphere. The crystallized Si thin films were characterized by Raman spectroscopy, Field emission scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). The Raman demonstrates that the a-Si has been crystallized. Furthermore the FE-SEM shows the lateral crystalline morphology, the length of grain is up to 5µm and the EDS reveals the nickel distribution in the MILC and MIC area.

scholarly journals Erratum: “Polycrystalline silicon produced by Ni-silicide mediated crystallization of amorphous silicon in an electric field” [J. Appl. Phys. 88, 3099 (2000)]

2007 ◽  
Vol 101 (10) ◽  
pp. 109901 ◽  
Author(s):  
Jin Jang ◽  
Seong Jin Park ◽  
Kyun Ho Kim ◽  
Bong Rae Cho ◽  
Won Kyu Kwak ◽  
...  
Keyword(s):  
Electric Field ◽  
Amorphous Silicon ◽  
Polycrystalline Silicon

Two-Step Annealing for Solution-Based Metal Induced Crystallization of Amorphous Silicon Films

2014 ◽  
Vol 1052 ◽  
pp. 109-114
Author(s):  
Jing Jin ◽  
Xiao Lei Qu ◽  
Wei Min Shi
Keyword(s):  
Amorphous Silicon ◽  
Salt Solution ◽  
Annealing Temperature ◽  
Chemical Vapor ◽  
Metal Induced Crystallization ◽  
Annealing Conditions ◽  
Eds Analysis ◽  
Metal Atoms ◽  
Si Films ◽  
Induced Crystallization

Solution-based nickel (Ni)-induced crystallization (S-MIC) of amorphous silicon (a-Si) films has been studied with a two-step annealing process. We especially introduced Ethyl cellulose (EC) into the Ni-salt solution, so the viscous Ni-salt solution can be uniformly spin-coated on the a-Si film prepared by plasma enhanced chemical vapor deposition (PECVD). The annealing temperature can be first set from room temperature (RT) to 400°C and kept at 400°C for 2 h in nitrogen ambience. And then, it is increased from 500°C to 550°C and kept for several hours in the following annealing. The correlations among crystallization, the concentrations of Ni-salt solution and annealing conditions can be discussed. The experimental results show that with the help of the two-step annealing, the a-Si films can be crystallized at a low temperature of 500°C. The crystalline fraction gets up to 81.2% after annealing at 520°C for 2 h and the grain size of the polycrystalline Si film is approximately 0.2 μm. Energy dispersive spectroscopy (EDS) analysis shows that very little Ni metal atoms reside in the crystallized Si film for S-MIC.

scholarly journals Crystallization of optically thick amorphous silicon films by near-IR femtosecond laser processing

2020 ◽  
Author(s):  
Kirill Bronnikov ◽  
Alexander Dostovalov ◽  
Artem Cherepakhin ◽  
Eugeny Mitsai ◽  
Alexander Nepomniaschiy ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Amorphous Silicon ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Visible Spectral Range ◽  
Ir Radiation ◽  
Optical Elements ◽  
Near Ir ◽  
Lateral Crystallization ◽  
Si Films

Amorphous silicon (&alpha;-Si) film present an inexpensive and promising material for optoelectronic and nanophotonic applications. Its basic optical and optoelectronic properties are known to be improved via phase transition from amorphous to polycrystalline phase. Infrared femtosecond laser radiation can be considered as a promising nondestructive and facile way to drive uniform in-depth and lateral crystallization of &alpha;-Si films that are typically opaque in UV-visible spectral range. However, so far only a few studies reported on utilization of near-IR radiation for laser-induced crystallization of &alpha;-Si providing no information regarding optical properties of the resultant polycrystalline Si films. The present work demonstrates efficient and gentle single-pass crystallization of &alpha;-Si films induced by their direct irradiation with near-IR femtosecond laser pulses coming at sub-MHz repetition rate. Comprehensive analysis of morphology and composition of laser-annealed films by atomic-force microscopy, optical, micro-Raman and energy-dispersive X-ray spectroscopy, as well as numerical modeling of optical spectra, confirmed efficient crystallization of &alpha;-Si and high-quality of the obtained films. Moreover, we highlight localized laser-driven crystallization of &alpha;-Si as a promising way for optical information encryption, anti-counterfeiting and fabrication of micro-optical elements.

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