Wafer Bonding of Diamond Films to Silicon for Silicon-on-Insulator Technology

2001 ◽  
Vol 686 ◽  
Author(s):  
Gleb N. Yushin ◽  
Scott D. Wolter ◽  
Alexander V. Kvit ◽  
Ramon Collazo ◽  
John T. Prater ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Amorphous Layer ◽  
Silicon On Insulator ◽  
Acoustic Microscopy ◽  
Cross Sectional ◽  
Silicon Carbon ◽  
Transmission Electron ◽  
Silicon On Insulator Technology

AbstractPolycrystalline diamond films previously grown on silicon were polished to an RMS roughness of 15 nm and bonded to the silicon in a dedicated ultrahigh vacuum bonding chamber. Successful bonding under a uniaxial mechanical stress of 32 MPa was observed at temperatures as low as 950°C. Scanning acoustic microscopy indicated complete bonding at fusion temperatures above 1150°C. Cross-sectional transmission electron microscopy later revealed a 30 nm thick intermediate amorphous layer consisting of silicon, carbon and oxygen.

TEM study of buried cobalt disilicide layers formed by ion implantation: Identification of cobalt monosilicide inclusions

1990 ◽  
Vol 48 (4) ◽  
pp. 576-577
Author(s):  
A. De Veirman ◽  
J. Van Landuyt ◽  
K.J. Reeson ◽  
R. Gwilliam ◽  
C. Jeynes ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Annealing Treatment ◽  
Silicon On Insulator ◽  
High Dose ◽  
Nitrogen Flow ◽  
Cobalt Disilicide ◽  
Transmission Electron ◽  
Beam Heating ◽  
Co Concentration ◽  
Silicon On Insulator Technology

In analogy to the formation of SIMOX (Separation by IMplanted OXygen) material which is presently the most promising silicon-on-insulator technology, high-dose ion implantation of cobalt in silicon is used to synthesise buried CoSi2 layers. So far, for high-dose ion implantation of Co in Si, only formation of CoSi2 is reported. In this paper it will be shown that CoSi inclusions occur when the stoichiometric Co concentration is exceeded at the peak of the Co distribution. 350 keV Co+ ions are implanted into (001) Si wafers to doses of 2, 4 and 7×l017 per cm2. During the implantation the wafer is kept at ≈ 550°C, using beam heating. The subsequent annealing treatment was performed in a conventional nitrogen flow furnace at 1000°C for 5 to 30 minutes (FA) or in a dual graphite strip annealer where isochronal 5s anneals at temperatures between 800°C and 1200°C (RTA) were performed. The implanted samples have been studied by means of Rutherford Backscattering Spectroscopy (RBS) and cross-section Transmission Electron Microscopy (XTEM).

A Novel Approach for The Production of Low Dislocation Relaxed Sige Material.

1993 ◽  
Vol 319 ◽  
Author(s):  
A.R. Powell ◽  
S.S. Iyer ◽  
F.K. Legoues
Keyword(s):  
Sige Layer ◽  
Silicon On Insulator ◽  
Buffer Layers ◽  
Threading Dislocation ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Novel Approach ◽  
Transmission Electron ◽  
Silicon Thickness ◽  
Buffer Structure

AbstractIn this growth process a new strain relief mechanism operates, whereby the SiGe epitaxial layer relaxes without the generation of threading dislocations within the SiGe layer. This is achieved by depositing SiGe on an ultrathin Silicon On Insulator, SOl, substrate with a superficial silicon thickness less than the SiGe layer thickness. Initially, the thin Si layer is put under tension due to an equalization of the strain between the Si and SiGe layers. Thereafter, the strain created in the thin Si layer relaxes by plastic deformation. Since the dislocations are formed and glide in the thin Si layer, no threading dislocation is ever introduced into the upper SiGe material, which appeared dislocation free to the limit of the cross sectional Transmission Electron Microscopy (TEM) analysis. We thus have a method for producing very low dislocation, relaxed SiGe films with the additional benefit of an SO substrate. This buffer structure is significantly less than a micrometer in thickness and offers distinct advantages over the thick SiGe buffer layers presently in use.

Optimizing Contact Resistance at a Resistor/Conductor Interface via Thin Film Microanalysis and Process Design of Experiments

1999 ◽  
Author(s):  
J.H. Linn ◽  
T.K. Thompson ◽  
M.G. Shlepr
Keyword(s):  
Thin Film ◽  
Contact Resistance ◽  
Amorphous Layer ◽  
Transmission Electron Microscopy Data ◽  
Silicon Carbon ◽  
Transmission Electron ◽  
Two Factors ◽  
Designed Experiment ◽  
Thin Film Resistors ◽  
Microscopy Data

Abstract Electrical data from chromium-silicon-carbon (CrSiC) thin film resistors (tfr) consistently showed highly variable contact resistance (Rc) to the aluminum (Al) interconnect. Transmission electron microscopy data from CrSiC/Al interfaces exhibiting high Rc showed a conformal, amorphous layer sandwiched between the tfr and Al. Auger data from the tfr/Al interface showed this ‘crud’ layer to contain increased C, S, and SiOx. Auger data from CrSiC films on test wafers exposed to the process steps before Al deposition showed additional growth of the ‘crud’ layer after each photoresist (PR) operation. In addition, Rc variability was reduced on product wafers from split lots when 2x the normal PR strip time was used compared to the normal strip time. A Designed Experiment (DOE) to examine improving the removal of this ‘crud’ layer was run on product lots utilizing two factors: the standard strip and a two-step strip. Electrical results for both Rc and die yield were significantly improved using the two-step process. The variability of the Rc was also reduced.

Enhanced Boron Diffusion in Amorphous Silicon

2004 ◽  
Vol 810 ◽  
Author(s):  
J.M. Jacques ◽  
N. Burbure ◽  
K.S. Jones ◽  
M.E. Law ◽  
L.S. Robertson ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Solid Phase ◽  
Amorphous Layer ◽  
Boron Diffusion ◽  
Cross Sectional ◽  
Enhanced Diffusion ◽  
Transmission Electron ◽  
Variable Angle Spectroscopic Ellipsometry ◽  
Secondary Ion

ABSTRACTIn prior works, we demonstrated the phenomenon of fluorine-enhanced boron diffusion within self-amorphized silicon. Present studies address the process dependencies of low temperature boron motion within ion implanted materials utilizing a germanium amorphization. Silicon wafers were preamorphized with either 60 keV or 80 keV Ge+ at a dose of 1×1015 atoms/cm2. Subsequent 500 eV, 1×1015 atoms/cm211B+ implants, as well as 6 keV F+ implants with doses ranging from 1×1014 atoms/cm2 to 5×1015 atoms/cm2 were also done. Furnace anneals were conducted at 550°C for 10 minutes under an inert N2 ambient. Secondary Ion Mass Spectroscopy (SIMS) was utilized to characterize the occurrence of boron diffusion within amorphous silicon at room temperature, as well as during the Solid Phase Epitaxial Regrowth (SPER) process. Amorphous layer depths were verified through Cross-Sectional Transmission Electron Microscopy (XTEM) and Variable Angle Spectroscopic Ellipsometry (VASE). Boron motion within as-implanted samples is observed at fluorine concentrations greater than 1×1020 atoms/cm3. The magnitude of the boron motion scales with increasing fluorine dose and concentration. During the initial stages of SPER, boron was observed to diffuse irrespective of the co-implanted fluorine dose. Fluorine enhanced diffusion at room temperature does not appear to follow the same process as the enhanced diffusion observed during the regrowth process.

Comparative fractography of chemical vapor and combustion deposited diamond films

1990 ◽  
Vol 5 (11) ◽  
pp. 2572-2588 ◽  
Author(s):  
H. A. Hoff ◽  
A. A. Morrish ◽  
J. E. Butler ◽  
B. B. Rath
Keyword(s):  
Electron Microscopy ◽  
Diamond Films ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Ambient Atmosphere ◽  
Transmission Electron ◽  
Controlled Environments ◽  
Inherent Strength ◽  
Low Pressures

Polycrystalline diamond films of several thicknesses have been fractured by manual bending and examined by scanning electron microscopy. These films have been deposited in controlled environments at low pressures by chemical vapor deposition and in ambient atmosphere with an oxygen-acetylene torch. Fracture surfaces in the low pressure depositions exhibit cleavage steps across the grains. These surfaces, independent of thickness, are primarily transgranular, attesting to the inherent strength of the deposits. However, the ambient deposited diamond has primarily intergranular fracture indicative of weak grain boundaries. Internal defects, observed with transmission electron microscopy, such as twins, stacking faults, and dislocations, occur generally in both types of deposition with no apparent preference for location or type of deposition.

Strain Relaxation of Ion-implanted Strained Silicon on Relaxed SiGe

2004 ◽  
Vol 810 ◽  
Author(s):  
R. T. Crosby ◽  
K. S. Jones ◽  
M. E. Law ◽  
A. F. Saavedra ◽  
J. L. Hansen ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Sample Surface ◽  
Amorphous Layer ◽  
Strained Silicon ◽  
Relaxation Processes ◽  
X Ray Diffraction ◽  
Strained Si ◽  
Cross Sectional ◽  
Molecular Beam Epitaxial ◽  
Transmission Electron

ABSTRACTThe relaxation processes of strained silicon films on silicon-rich relaxed SiGe alloys have been studied. Experimental structures were generated via Molecular Beam Epitaxial (MBE) growth techniques and contain a strained silicon capping layer of approximately 50 nm. The relaxed SiGe alloy compositions range from 0 to 30 atomic% germanium. Samples received two distinct types of silicon implants. A 12 keV Si+ implant at a dose of 1×1015 atoms/cm2 was used to generate an amorphous layer strictly confined within the strained Si cap. An alternate 60 keV Si+ implant at a dose of 1×1015 atoms/cm2 was employed to create a continuous amorphous layer extending from the sample surface to a position 50 nm into the bulk SiGe material. The strain relaxation and regrowth processes are quantified through High Resolution X-Ray Diffraction (HRXRD) rocking curves and Cross-sectional Transmission Electron Microscopy (XTEM). The role of injected silicon interstitials upon the strain relaxation processes at the Si/SiGe interface after annealing at 600°C is investigated.

Temperature Dependence of Damage in Boron-Implanted Silicon

1989 ◽  
Vol 147 ◽  
Author(s):  
G. Ottaviani ◽  
F. Nava ◽  
R. Tonini ◽  
S. Frabboni ◽  
G. F. Cerofolini ◽  
...  
Keyword(s):  
Room Temperature ◽  
Amorphous Layer ◽  
Systematic Investigation ◽  
Vacuum Furnace ◽  
Cross Sectional ◽  
Ion Channeling ◽  
Projected Range ◽  
Transmission Electron ◽  
Boron Implantation ◽  
Residual Damage

AbstractWe have performed a systematic investigation of boron implantation at 30 keV into <100> n-type silicon in the 77 –300 K temperature range and mostly at 9×1015 cm−2 fluence. The analyses have been performed with ion channeling and cross sectional transmission electron microscopy both in as-implanted samples and in samples annealed in vacuum furnace at 500 °C and 850 °C for 30 min. We confirm the impossibility of amorphization at room temperature and the presence of residual damage mainly located at the boron projected range. On the contrary, a continuous amorphous layer can be obtained for implants at 77 K and 193 K; the thickness of the implanted layer is increased by lowering the temperature, at the same time the amorphous-crystalline interface becomes sharper. Sheet resistance measurements performed after isochronal annealing shows an apparent reverse annealing of the dopant only in the sample implanted at 273 K. The striking differences between light and heavy ions observed at room temperature implantation disappears at 77 K and full recovery with no residual damage of the amorphous layer is observed.

Mechanisms of Low-Temperature Ti/Si-Based Wafer Bonding

2005 ◽  
Vol 863 ◽  
Author(s):  
Jian Yu ◽  
Yinmin Wang ◽  
Arthur W. Haberl ◽  
Hassa Bakhru ◽  
Jian-Qiang Lu ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Wafer Bonding ◽  
Rutherford Backscattering Spectrometry ◽  
Three Dimensional ◽  
Amorphous Layer ◽  
Bonding Interface ◽  
Native Oxide ◽  
Wafer Level ◽  
Transmission Electron ◽  
Strong Adhesion

AbstractThree-dimensional (3D) wafer-level integration is receiving increased attention with various wafer bonding approaches being evaluated. Recently, we explored an alternative lowtemperature Ti/Si-based wafer bonding, in which an oxidized silicon wafer was successfully bonded with a prime silicon wafer at 400°C using 30 nm sputtered Ti as adhesive. The bonded pairs show excellent bonding uniformity and mechanical integrity. Rutherford backscattering spectrometry (RBS) was applied to confirm the interdiffusion occurred in the interlayer. The bonding interface was examined by high-resolution transmission electron microscopy (HRTEM) assisted with electron energy loss spectroscopy (EELS) elemental mapping and energy dispersive X-ray spectroscopy (EDX). Characterization of the bonding interface indicates the strong adhesion achieved is attributed to an amorphous layer formed by interdiffusion of Si and oxygen into Ti interlayer and the unique ability to reduce native oxide (SiO2) by Ti even at low temperatures.

A Novel Process to Form Epitaxial Si Structures With Buried Silicide

1991 ◽  
Vol 235 ◽  
Author(s):  
YU. N. Erokhin ◽  
R. Grotzschel ◽  
S. R. Oktyabrski ◽  
S. Roorda ◽  
W. Sinke ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thermal Annealing ◽  
Crystalline Silicon ◽  
Rutherford Backscattering Spectrometry ◽  
Amorphous Layer ◽  
Cross Sectional ◽  
X Ray ◽  
Metal Atoms ◽  
Transmission Electron ◽  
High Metal

ABSTRACTThe interaction during low temperature thermal annealing of metal atoms from a Ni film evaporated on top of Si structures with a buried amorphous layer formed by ion implantation has been investigated. Rutherford Backscattering Spectrometry (RBS)/channeling, cross-sectional transmission electron microscopy (XTEM) and X-ray microanalysis were used to determine structures and compositions. It is shown that the combination of such silicon properties as the increased rate of silicidation reaction for amorphous silicon with respect to the crystalline one in combination with high metal atom diffusivity leads to formation of buried epitaxial Ni silicide islands at the interface between the amorphous and the top crystalline silicon layers. During thermal annealing at temperatures as low as 350° C, these islands move through the a-Si layer leaving behind epitaxially recrystallized Si.

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