Strain Relaxation of Ion-implanted Strained Silicon on Relaxed SiGe

2004 ◽  
Vol 810 ◽  
Author(s):  
R. T. Crosby ◽  
K. S. Jones ◽  
M. E. Law ◽  
A. F. Saavedra ◽  
J. L. Hansen ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Sample Surface ◽  
Amorphous Layer ◽  
Strained Silicon ◽  
Relaxation Processes ◽  
X Ray Diffraction ◽  
Strained Si ◽  
Cross Sectional ◽  
Molecular Beam Epitaxial ◽  
Transmission Electron

ABSTRACTThe relaxation processes of strained silicon films on silicon-rich relaxed SiGe alloys have been studied. Experimental structures were generated via Molecular Beam Epitaxial (MBE) growth techniques and contain a strained silicon capping layer of approximately 50 nm. The relaxed SiGe alloy compositions range from 0 to 30 atomic% germanium. Samples received two distinct types of silicon implants. A 12 keV Si+ implant at a dose of 1×1015 atoms/cm2 was used to generate an amorphous layer strictly confined within the strained Si cap. An alternate 60 keV Si+ implant at a dose of 1×1015 atoms/cm2 was employed to create a continuous amorphous layer extending from the sample surface to a position 50 nm into the bulk SiGe material. The strain relaxation and regrowth processes are quantified through High Resolution X-Ray Diffraction (HRXRD) rocking curves and Cross-sectional Transmission Electron Microscopy (XTEM). The role of injected silicon interstitials upon the strain relaxation processes at the Si/SiGe interface after annealing at 600°C is investigated.

Solid Phase Recrystallization and Strain Relaxation in Ion-Implanted Strained Si on SiGe Heterostructures

2005 ◽  
Vol 864 ◽  
Author(s):  
M.S. Phen ◽  
R. T. Crosby ◽  
V. Craciun ◽  
K. S. Jones ◽  
M.E. Law ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Solid Phase ◽  
Strain Relaxation ◽  
Amorphous Layer ◽  
Strained Silicon ◽  
X Ray Diffraction ◽  
Strained Si ◽  
Mbe Growth ◽  
Capping Layer ◽  
X Ray

AbstractThe relaxation process of strained silicon films on silicon-rich relaxed SiGe alloys has been studied. Experimental structures were grown via Molecular Beam Epitaxy (MBE) growth techniques and contain a strained silicon capping layer approximately 50 nm thick. The relaxed SiGe alloy compositions range from 0 to 30 at.% germanium. A 12 keV Si+ implant at a dose of 1×1015 atoms/cm2 was used to generate an amorphous layer ∼30 nm thick, which was confined within the strained silicon capping layer. Upon annealing at 500 °C, it was found that the solid phase epitaxial regrowth process of the amorphous silicon breaks down for high strain levels and regrowth related defects were observed in the regrown layer. In addition, high-resolution X-Ray diffraction results indicate a reduction in strain for the silicon capping layer. This study addresses the critical strain regime necessary for the breakdown of solid phase epitaxial recrystallization in silicon.

Influence of Substrate Miscut on the Island Formation Process in In0.2Ga0.8As/GaAs Multilayers

2003 ◽  
Vol 10 (02n03) ◽  
pp. 263-270
Author(s):  
E. Gartstein ◽  
D. Mogilyanski ◽  
D. Barlam
Keyword(s):  
Strain Relaxation ◽  
Relaxation Processes ◽  
X Ray Diffraction ◽  
Element Analysis ◽  
Island Nucleation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Initial Substrate ◽  
Influence Of Substrate

LPOMVPE-grown In0.2Ga0.8As/GaAs multilayers on GaAs substrates with miscut values of 0°, 0.3° and 2° around the [100] azimuthal direction were investigated by employing X-ray diffraction techniques complemented by atomic force microscopy (AFM) and transmission electron microscopy (TEM). The step-terrace structure evolving on the interfaces upon deposition strongly depends on the initial substrate morphology. The initiation of island nucleation, and both lateral and vertical ordering are related to the interfacial morphological parameters. Finite element analysis (FEA) is performed to elucidate the interplay between structural and strain relaxation processes.

Dynamical X-ray diffraction analysis of Solid Phase Epitaxy growth of Si1-yCy heterostructures

2000 ◽  
Vol 647 ◽  
Author(s):  
J. Rodriguez-Viejo ◽  
Zakia el-Felk
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Solid Phase ◽  
Strain Relaxation ◽  
Liquid Nitrogen Temperature ◽  
Amorphous Layer ◽  
Epitaxial Films ◽  
High Dose ◽  
X Ray Diffraction ◽  
Strained Si ◽  
X Ray

AbstractThe strain and damage produced on Si substrates by high-dose ion implantation of Si and C is investigated after thermal treatments by double and triple crystal X-ray diffraction, high ressolution transmission electron microscopy (HRTEM) and Secondary Ion Mass Spectrometry (SIMS). Si implantation (180 keV, 5×1015 Si at cm−2) at liquid nitrogen temperature forms a buried amorphous layer. Annealing at temperatures close to 650°C results in epitaxial films with significant defect recovery. X-ray rocking curves show the existence of interference fringes on the left hand side of the 004 Si peak indicating the presence of tensile strained Si layers due to the generation of Si interstitials during the implantation process. C implantation, at 60 keV, 7×1015 cm−2 and 450°C, in the preamorphized Si wafers results in the growth of Si1-yCy epitaxial films with a low amount of substitutional carbon (y≍ 0.1%). Rapid thermal annealing at 750°C results in highly defective epitaxial films with a maximum carbon content close to 0.4%.The high density of defects is responsible for the partial strain relaxation observed in those layers. The amount of substitutional Si also decreases drastically with increasing temperature. Profile fitting of rocking curves using dynamical X-ray theory is used to estimate the C concentration and the strain and disorder profiles of the heterostructures.

Comparison of Ion-Milling Techniques For Cross-Sectional TEM of Semiconductors

1985 ◽  
Vol 43 ◽  
pp. 166-167
Author(s):  
Julia T. Luck ◽  
C. W. Boggs ◽  
S. J. Pennycook
Keyword(s):  
Analytical Techniques ◽  
Sample Surface ◽  
Ion Milling ◽  
Cross Sectional ◽  
Reliable Technique ◽  
Near Surface ◽  
Transmission Electron ◽  
Thin Region ◽  
Transient Thermal

The use of cross-sectional Transmission Electron Microscopy (TEM) has become invaluable for the characterization of the near-surface regions of semiconductors following ion-implantation and/or transient thermal processing. A fast and reliable technique is required which produces a large thin region while preserving the original sample surface. New analytical techniques, particularly the direct imaging of dopant distributions, also require good thickness uniformity. Two methods of ion milling are commonly used, and are compared below. The older method involves milling with a single gun from each side in turn, whereas a newer method uses two guns to mill from both sides simultaneously.

scholarly journals Dual Electrochemical Treatments to Improve Properties of Ti6Al4V Alloy

Materials ◽  
2020 ◽  
Vol 13 (11) ◽  
pp. 2479
Author(s):  
Stefano Rossi ◽  
Luciana Volgare ◽  
Carine Perrin-Pellegrino ◽  
Carine Chassigneux ◽  
Erick Dousset ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Combined Treatment ◽  
Amorphous Film ◽  
Amorphous Layer ◽  
Good Alternative ◽  
Surface Treatments ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Fluid Environment

Surface treatments are considered as a good alternative to increase biocompatibility and the lifetime of Ti-based alloys used for implants in the human body. The present research reports the comparison of bare and modified Ti6Al4V substrates on hydrophilicity and corrosion resistance properties in body fluid environment at 37 °C. Several surface treatments were conducted separately to obtain either a porous oxide layer using nanostructuration (N) in ethylene glycol containing fluoride solution, or bulk oxide thin films through heat treatment at 450 °C for 3 h (HT), or electrochemical oxidation at 1 V for 3 h (EO), as well as combined treatments (N-HT and N-EO). In-situ X-ray diffraction and ex-situ transmission electron microscopy have shown that heat treatment gave first rise to the formation of a 30 nm thick amorphous layer which crystallized in rutile around 620 °C. Electrochemical oxidations gave rise to a 10 nm thick amorphous film on the top of the surface (EO) or below the amorphous nanotube layer (N-EO). Dual treated samples presented similar results with a more stable behavior for N-EO. Finally, for both corrosion and hydrophilicity points of view, the new combined treatment to get a total amorphous N-EO sample seems to be the best and even better than the partially crystallized N-HT sample.

Effect of Au distribution in NiO/Au film on the ohmic contact formation to p-type GaN

2005 ◽  
Vol 20 (2) ◽  
pp. 456-463 ◽  
Author(s):  
Jiin-Long Yang ◽  
J.S. Chen ◽  
S.J. Chang
Keyword(s):  
Electron Microscopy ◽  
Ohmic Contact ◽  
Incident Angle ◽  
Specific Contact Resistance ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Ohmic Behavior ◽  
Transmission Electron ◽  
Specific Contact ◽  
P Type

The distribution of Au and NiO in NiO/Au ohmic contact on p-type GaN was investigated in this work. Au (5 nm) films were deposited on p-GaN substrates by magnetron sputtering. Some of the Au films were preheated in N2 ambient to agglomerate into semi-connected structure (abbreviated by agg-Au); others were not preheated and remained the continuous (abbreviated by cont-Au). A NiO film (5 nm) was deposited on both types of samples, and all samples were subsequently annealed in N2 ambient at the temperatures ranging from 100 to 500 °C. The surface morphology, phases, and cross-sectional microstructure were investigated by scanning electron microscopy, glancing incident angle x-ray diffraction, and transmission electron microscopy. I-V measurement on the contacts indicates that only the 400 °C annealed NiO/cont-Au/p-GaN sample exhibits ohmic behavior and its specific contact resistance (ρc) is 8.93 × 10−3 Ω cm2. After annealing, Au and NiO contact to GaN individually in the NiO/agg-Au/p-GaN system while the Au and NiO layers become tangled in the NiO/cont-Au/p-GaN system. As a result, the highly tangled NiO-Au structure shall be the key to achieve the ohmic behavior for NiO/cont-Au/p-GaN system.

Single Crystal Silicon Carbide On Silicon Using A Supersonic Gas Jet Of Methylsilane

1997 ◽  
Vol 483 ◽  
Author(s):  
S. A. Ustin ◽  
C. Long ◽  
L. Lauhon ◽  
W. Ho
Keyword(s):  
Growth Rate ◽  
Growth Rates ◽  
Single Crystal Silicon ◽  
Maximum Growth ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
Cross Sectional ◽  
Supersonic Molecular Beam ◽  
Transmission Electron

AbstractCubic SiC films have been grown on Si(001) and Si(111) substrates at temperatures between 600 °C and 900 °C with a single supersonic molecular beam source. Methylsilane (H3SiCH3) was used as the sole precursor with hydrogen and nitrogen as seeding gases. Optical reflectance was used to monitor in situ growth rate and macroscopic roughness. The growth rate of SiC was found to depend strongly on substrate orientation, methylsilane kinetic energy, and growth temperature. Growth rates were 1.5 to 2 times greater on Si(111) than on Si(001). The maximum growth rates achieved were 0.63 μm/hr on Si(111) and 0.375μm/hr on Si(001). Transmission electron diffraction (TED) and x-ray diffraction (XRD) were used for structural characterization. In-plane azimuthal (ø-) scans show that films on Si(001) have the correct 4-fold symmetry and that films on Si(111) have a 6-fold symmetry. The 6-fold symmetry indicates that stacking has occurred in two different sequences and double positioning boundaries have been formed. The minimum rocking curve width for SiC on Si(001) and Si(111) is 1.2°. Fourier Transform Infrared (FTIR) absorption was performed to discern the chemical bonding. Cross Sectional Transmission Electron Microscopy (XTEM) was used to image the SiC/Si interface.

Epitaxial Si1-xGex Films and Superlattice Structures Grown by CVD for Infrared Photodetectors

2003 ◽  
Vol 770 ◽  
Author(s):  
L. Maddiona ◽  
S. Coffa ◽  
S. Lorenti ◽  
C. Bongiorno
Keyword(s):  
Near Infrared ◽  
Chemical Vapor ◽  
Local Area ◽  
Strained Si ◽  
Cross Sectional ◽  
Active Layers ◽  
Transmission Electron ◽  
Photo Response ◽  
Superlattice Structures ◽  
On Chip

AbstractIntegration of photodetectors with high responsitivity in the near infrared (1.3-1.55 μm) on standard Si electronic circuits is important for a variety of applications in the field of on-chip, local area and long haul optical communications. In this work we report on a detailed structural and optical characterization of epitaxial Si1-xGex films and Si1-xGex /Si multilayers grown by chemical vapor deposition on (100) Si wafers. Cross-sectional transmission electron microscopy analyses show that metastable strained Si1-xGex films of few nanometer with x>40% can be deposited at low growth temperature and pressure. Absorption measurements on these films demonstrate the extension of the photo-response to 1.55 μm. Using these films as active layers Schottky integrated photodetectors have been fabricated.

The Characterization Of Chemical Bath Deposited Cds On Single Crystal InP Substrates

1997 ◽  
Vol 485 ◽  
Author(s):  
G. M. Riker ◽  
M. M. Al-Jassim ◽  
F. S. Hasoon
Keyword(s):  
Electron Microscopy ◽  
Single Crystal ◽  
Surface Cleaning ◽  
Film Morphology ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Fine Grained ◽  
Transmission Electron ◽  
Cds Thin Films ◽  
Inp Substrates

AbstractWe have investigated CdS thin films as possible passivating window layers for InP. The films were deposited on single crystal InP by chemical bath deposition (CBD). The film thickness, as optically determined by ellipsometry, was varied from 500 to 840Å. The film morphology was investigated by high resolution scanning electron microscopy (SEM), whereas the film microstructure was studied by X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM). Most of the films were fine-grained polycrystalline CdS, with some deposition conditions resulting in epitaxial growth. Cross-sectional TEM examination revealed the presence of interface contaminants. The effect of such contaminants on the film morphology and microstructure was studied, and various approaches for InP surface cleaning/treatment were investigated. The epitaxial films were determined to be hexagonal on both the (111) and (100) InP substrates; however, they were heavily faulted.

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