Thermal Effects in Plasma Treatment of Patterned PDMS for Bonding Stacked Channels

2003 ◽  
Vol 782 ◽  
Author(s):  
Jin Zou ◽  
Peter Y. Wong
Keyword(s):  
Silicon Nitride ◽  
Hybrid Systems ◽  
Thermal Effects ◽  
Room Temperature ◽  
Work Of Adhesion ◽  
Chemical Components ◽  
Hydroxyl Groups ◽  
Processing Temperature ◽  
Plasma Oxidation ◽  
Bond Quality

ABSTRACTThis paper presents the results of a study to identify the effects of preheating for plasma oxidation (ashing) of patterned Polydimethylsiloxane (PDMS) for Bio-MEMS applications. PDMS creates an irreversible seal to itself as well as strong seals with glass, silicon, and silicon nitride. This process activates the surface by producing hydroxyl groups that last for several minutes to allow bonding. Several channels can be stacked to create 3D systems for microfluidic applications using PDMS alone or in combination with other materials to develop hybrid systems. For PDMS, bonding temperatures typically occur at room temperature. This research investigates the effect of preheating the materials prior to ashing. The investigators successfully demonstrate good bonding of PDMS to slides with a work adhesion on the order of 100 mJm-2. Preheating the samples at 65°C results in significant increase in work adhesion depending on mixture. The effects of processing temperature and chemical components on bond quality and work of adhesion are reported.

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

Electrical and Optical Properties of Si+ and P+ Implanted InP:Fe

1990 ◽  
Vol 201 ◽  
Author(s):  
Honglie Shen ◽  
Genqing Yang ◽  
Zuyao Zhou ◽  
Guanqun Xia ◽  
Shichang Zou
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
Temperature Dependence ◽  
Optimal Condition ◽  
Room Temperature ◽  
Broad Band ◽  
Photoluminescence Spectra ◽  
Electrical And Optical Properties ◽  
Spectrum Measurement ◽  
Single Implant

AbstractDual implantations of Si+ and P+ into InP:Fe were performed both at 200°C and room temperature. Si+ ions were implanted by 150keV with doses ranging from 5×1013 /cm2 to 1×1015 /cm2, while P+ ions were implanted by 110keV. 160keV and 180keV with doses ranging from 1×l013 /cm2 to 1×1015 /cm2. Hall measurements and photoluminescence spectra were used to characterize the silicon nitride encapsulated annealed samples. It was found that enhanced activation can be obtained by Si+ and P+ dual implantations. The optimal condition for dual implantations is that the atomic distribution of implanted P overlaps that of implanted si with the same implant dose. For a dose of 5×l014 /cm2, the highest activation for dual implants is 70% while the activation for single implant is 40% after annealing at 750°C for 15 minutes. PL spectrum measurement was carried out at temperatures from 11K to 100K. A broad band at about 1.26eV was found in Si+ implanted samples, of which the intensity increased with increasing of the Si dose and decreased with increasing of the co-implant P+ dose. The temperature dependence of the broad band showed that it is a complex (Vp-Sip) related band. All these results indicate that silicon is an amphoteric species in InP.

Phase Relationship Studies of Silicon Nitride System—A Key to Materials Design

1992 ◽  
Vol 287 ◽  
Author(s):  
T.S. Yen ◽  
W.Y. Sun
Keyword(s):  
Elevated Temperature ◽  
Silicon Nitride ◽  
Grain Boundary ◽  
Phase Behavior ◽  
Phase Diagrams ◽  
Room Temperature ◽  
Phase Relationship ◽  
Materials Design ◽  
Basic Approach ◽  
System A

ABSTRACTAdditions and revisions to several of the most important phase diagrams and phase behavior diagrams in the silicon nitride field are reviewed in this work, with emphasis on the Y-Si-A1-O-N system. This information is further used to make observations on the promising silicon nitride systems containing either highly refractory grain boundary phases or compatible matrix phases of desirable properties. Examples are provided to illustrate the advantage of such a basic approach to materials design. Hardness, toughness, strength at room temperature and elevated temperature and even sinterability can all be improved by adopting such an approach.

Structure determination of the 1/1 α/β mixed lactose by X-ray powder diffraction

2005 ◽  
Vol 61 (4) ◽  
pp. 455-463 ◽  
Author(s):  
Jacques Lefebvre ◽  
Jean-François Willart ◽  
Vincent Caron ◽  
Ronan Lefort ◽  
Frédéric Affouard ◽  
...  
Keyword(s):  
Powder Diffraction ◽  
Size Effects ◽  
Room Temperature ◽  
Real Space ◽  
Hydroxyl Groups ◽  
Soft Constraints ◽  
Rietveld Refinements ◽  
X Ray ◽  
Mixed Compound

The mixed form of α/β lactose was obtained by heating amorphous α-lactose at 443 K. NMR spectroscopy determined the stoichiometry of this mixed compound to be 1/1. The X-ray powder diffraction pattern was recorded at room temperature with a sensitive curved detector (CPS 120). The structure was solved by real-space methods (simulated annealing) followed by Rietveld refinements with soft constraints on bond lengths and bond angles. The H atoms of the hydroxyl groups were localized by minimization of the crystalline energy. The cell of 1/1 α/β lactose is triclinic with the space group P1 and contains two molecules (one molecule of each anomer). The crystalline cohesion is achieved by networks of O—H...O hydrogen bonds. The width of the Bragg peaks is interpreted through a microstructural approach in terms of isotropic strain effects and anisotropic size effects.

The Effect of Thermal Prestress on the Deformation of Micromirror Chip Embedded with Through-Silicon Vias

2011 ◽  
Vol 462-463 ◽  
pp. 563-568 ◽  
Author(s):  
Meng Kao Yeh ◽  
Chun Lin Lu
Keyword(s):  
Stress Distribution ◽  
Room Temperature ◽  
Thermal Loading ◽  
Heat Transfer Analysis ◽  
Processing Temperature ◽  
Temperature Decrease ◽  
Analysis Method ◽  
The Finite Element Method ◽  
Through Silicon Vias ◽  
Silicon Vias

The thermal expansion mismatch problem for a chip due to temperature decrease from processing temperature to room temperature may cause residual stress inside the chip structure. The thermal prestress accumulated and may affect the chip reliability when the chip was subjected to the thermal loading again. In this paper, the effect of thermal prestress on the micromirror chip embedded with copper through-silicon vias (TSVs) was investigated by the finite element method. In analysis, the micromirror chip embedded with TSVs was analyzed first under thermal loading which resulted from temperature decrease between the stress free processing temperature and room temperature. This process produced a thermal prestress in the micromirror chip. The chip was then subjected to a heat source at the bottom while in operation and the heat transfer analysis was used to simulate this situation. Finally, the thermal stress analysis was carried out to obtain the deformation and the stress distribution in the chip. The results show that the thermal prestress had strong effect on the chip reliability and should be reduced as much as possible. This paper proposed a three steps analysis method to obtain the deformation and the stress distribution in the chip, in which the effect of thermal prestress on the chip reliability was evaluated effectively.

Enhanced Thermal Stability of Esterified Lignin in Different Solvent Mediums

2018 ◽  
Vol 9 (1) ◽  
pp. 39-49 ◽  
Author(s):  
Sharifah Nurul Ain Syed Hashim ◽  
Sarani Zakaria ◽  
Chin Hua Chia ◽  
Sharifah Nabihah Syed Jaafar
Keyword(s):  
Thermal Stability ◽  
Alkaline Solution ◽  
Room Temperature ◽  
Hydroxyl Groups ◽  
Aqueous Alkaline Solution ◽  
Alkali Lignin ◽  
Weight Percentage ◽  
H Nmr ◽  
Ft Ir ◽  
Thermal Stability Of

In this study, soda alkali lignin from oil palm empty fruit bunch (EFB-AL) and kenaf core (KC-AL) are esterified with maleic anhydride under two different conditions, namely i) pyridine at temperature of 120°C for 3h and ii) aqueous alkaline solution at room temperature for 4h. As a result, the weight percentage gain (WPG) of the esterified EFB-AL (EFB-EL) and esterified KC-AL (KC-EL) in pyridine demonstrated a higher compared to aqueous alkaline solution. The FT-IR results of EFB-EL and KC-EL in both solvents exhibited some changes at the carbonyl and hydroxyl groups. Furthermore, the esterification process induced the carboxylic peak to appear in both alkali lignin samples. The outcome is confirmed by conducting H-NMR analysis, which demonstrated ester and carboxylic acid peaks within the spectral analysis. Finally, the TGA results showed both EFB-EL and KC-EL that are exposed to aqueous alkaline actually possessed better thermal stability and higher activation energy (Ea) compared to the esterified samples in pyridine.

Structure determination of the stable anhydrous phase of α-lactose from X-ray powder diffraction

2005 ◽  
Vol 61 (2) ◽  
pp. 185-191 ◽  
Author(s):  
Cyril Platteau ◽  
Jacques Lefebvre ◽  
Frederic Affouard ◽  
Jean-François Willart ◽  
Patrick Derollez ◽  
...  
Keyword(s):  
Powder Diffraction ◽  
Room Temperature ◽  
Structural Model ◽  
Hydroxyl Groups ◽  
Rietveld Refinements ◽  
X Ray ◽  
Hydrogen Bond Networks ◽  
Monte Carlo Simulated Annealing ◽  
Annealing Method

The stable anhydrous form of α-lactose has been obtained by the dehydration of α-lactose monohydrate in methanol. An X-ray powder diffraction pattern was recorded at room temperature with a laboratory diffractometer equipped with an INEL curved sensitive detector CPS120. The starting structural model of this form was found by a Monte-Carlo simulated annealing method. The structure was obtained through Rietveld refinements and the minimization of crystalline energy for the localization of the H atoms of the hydroxyl groups. Soft restraints were applied to bond lengths and angles. Networks of O—H...O hydrogen bonds account for the crystalline cohesion. A comparison is made between the hydrogen-bond networks of this form and those of the monohydrate and hygroscopic anhydrous forms of α-lactose.

Silicon nitride deposited by ECR–CVD at room temperature for LOCOS isolation technology

2003 ◽  
Vol 212-213 ◽  
pp. 388-392 ◽  
Author(s):  
Marcus A Pereira ◽  
José A Diniz ◽  
Ioshiaki Doi ◽  
Jacobus W Swart
Keyword(s):  
Silicon Nitride ◽  
Room Temperature
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