The Effect of Thermal Prestress on the Deformation of Micromirror Chip Embedded with Through-Silicon Vias

2011 ◽  
Vol 462-463 ◽  
pp. 563-568 ◽  
Author(s):  
Meng Kao Yeh ◽  
Chun Lin Lu
Keyword(s):  
Stress Distribution ◽  
Room Temperature ◽  
Thermal Loading ◽  
Heat Transfer Analysis ◽  
Processing Temperature ◽  
Temperature Decrease ◽  
Analysis Method ◽  
The Finite Element Method ◽  
Through Silicon Vias ◽  
Silicon Vias

The thermal expansion mismatch problem for a chip due to temperature decrease from processing temperature to room temperature may cause residual stress inside the chip structure. The thermal prestress accumulated and may affect the chip reliability when the chip was subjected to the thermal loading again. In this paper, the effect of thermal prestress on the micromirror chip embedded with copper through-silicon vias (TSVs) was investigated by the finite element method. In analysis, the micromirror chip embedded with TSVs was analyzed first under thermal loading which resulted from temperature decrease between the stress free processing temperature and room temperature. This process produced a thermal prestress in the micromirror chip. The chip was then subjected to a heat source at the bottom while in operation and the heat transfer analysis was used to simulate this situation. Finally, the thermal stress analysis was carried out to obtain the deformation and the stress distribution in the chip. The results show that the thermal prestress had strong effect on the chip reliability and should be reduced as much as possible. This paper proposed a three steps analysis method to obtain the deformation and the stress distribution in the chip, in which the effect of thermal prestress on the chip reliability was evaluated effectively.

Surface activated bonding of copper through silicon vias and gold stud bumps at room temperature

2011 ◽  
Vol 29 (2) ◽  
pp. 021007 ◽  
Author(s):  
M. M. R. Howlader ◽  
F. Zhang ◽  
M. J. Deen ◽  
T. Suga ◽  
A. Yamauchi
Keyword(s):  
Room Temperature ◽  
Through Silicon Vias ◽  
Silicon Vias

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

Failure and Stress Analysis of Cu TSVs Using GHz-Scanning Acoustic Microscopy and Scanning Infrared Polariscopy

2015 ◽  
Author(s):  
Ingrid De Wolf ◽  
Ahmad Khaled ◽  
Martin Herms ◽  
Matthias Wagner ◽  
Tatjana Djuric ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Stress Analysis ◽  
Rayleigh Waves ◽  
Acoustic Microscopy ◽  
Scanning Acoustic Microscopy ◽  
Through Silicon Vias ◽  
Stress Anisotropy ◽  
Silicon Vias ◽  
Ic Technology ◽  
Detection Of Defects

Abstract This paper discusses the application of two different techniques for failure analysis of Cu through-silicon vias (TSVs), used in 3D stacked-IC technology. The first technique is GHz Scanning Acoustic Microscopy (GHz- SAM), which not only allows detection of defects like voids, cracks and delamination, but also the visualization of Rayleigh waves. GHz-SAM can provide information on voids, delamination and possibly stress near the TSVs. The second is a reflection-based photoelastic technique (SIREX), which is shown to be very sensitive to stress anisotropy in the Si near TSVs and as such also to any defect affecting this stress, such as delamination and large voids.

An LIBS quantitative analysis method for alloy steel at high temperature based on transfer learning

2018 ◽  
Vol 33 (7) ◽  
pp. 1184-1195 ◽  
Author(s):  
Jianhong Yang ◽  
Xiaomeng Li ◽  
Huili Lu ◽  
Jinwu Xu ◽  
Haixia Li
Keyword(s):  
High Temperature ◽  
Quantitative Analysis ◽  
Regression Model ◽  
Transfer Learning ◽  
Alloy Steel ◽  
Room Temperature ◽  
Analysis Method ◽  
Quantitative Analysis Method

Information learnt from spectra at room temperature is transferred to assist in building a better regression model at high temperature.

Heat Transfer Analysis of Room-Temperature Finned-Tube Evaporator for Cryogenic Nitrogen

2011 ◽  
Vol 133 (9) ◽  
Author(s):  
Shun Ching Lee ◽  
Tzu-Min Chen
Keyword(s):  
Heat Flux ◽  
Room Temperature ◽  
Integrated Model ◽  
Finned Tube ◽  
Heat Transfer Analysis ◽  
Outlet Temperature ◽  
Ambient Conditions ◽  
Governing Equations ◽  
Initial Value ◽  
Two Phase

Abstract The behavior of cryogenic nitrogen in a room-temperature evaporator six meters long is analyzed. Trapezoid fins are employed to enhance the heat flux supplied by the environment. The steady-state governing equations specified by the mixed parameters are derived from the conservations of momentum and energy. The initial value problem is solved by space integration. The fixed ambient conditions are confirmed by way of the meltback effect. An integrated model is utilized to analyze the convective effect of two-phase flow, which dominates the evaporation behavior. Another integrated model is employed to determine the total heat flux from the environment to the wet surface of the evaporator. The foundation of the formation of an ice layer surrounding the evaporator is presented. If the fin height is shorter than 0.5 m, the whole evaporator is surrounded by ice layer. If the fin height is longer than 0.5 m, the total pressure drop of nitrogen in the tube is negligible. The outlet temperature is always within the range between −12 °C and 16 °C for the evaporator with the fin height of 1.0 m. For the evaporator with dry surface, the nitrogen has the outlet temperature less than the ambient temperature at least by 5 °C.

Sign in / Sign up

Export Citation Format

Share Document