scholarly journals Initial Interaction of Crystalline Al/Amorphous Si Bilayer during Annealing

2004 ◽  
Vol 808 ◽  
Author(s):  
Yonghao Zhao ◽  
Jiangyong Wang ◽  
Eric J. Mittemeijer
Keyword(s):  
Auger Electron ◽  
Focused Ion Beam ◽  
Imaging Techniques ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Initial Interaction ◽  
Magnetron Sputter ◽  
Amorphous Si ◽  
Sputter Deposited

ABSTRACTInitial interaction of a magnetron sputter deposited Al(100 nm, {111} fibre textured)/Si(150 nm, amorphous) bilayer, induced by isothermally annealing at 523 K for 60 min in a vacuum of 2.0×10−4 Pa, was studied by X-ray diffraction, Auger electron microscopy and focused-ion beam imaging techniques. Upon annealing, the crystalline Si had grown into the grain boundaries of the Al layer with a {111} texture, a crystallite size of approximate 12 nm and a tensile stress of +138 MPa. Simultaneously, the Al grains had grown into the Si layer from the original interface of the a-Si and Al sublayers with the lateral grain growth. The stress parallel to the surface of the Al layer had changed from +27 MPa to +232 MPa after annealing.

Oxidation of Alloy-X in Subcritical, Transition, and Supercritical Water

CORROSION ◽  
10.5006/3881 ◽  
2021 ◽  
Author(s):  
Zachary Karmiol ◽  
Dev Chidambaram
Keyword(s):  
Supercritical Water ◽  
Photoelectron Spectroscopy ◽  
Focused Ion Beam ◽  
Elevated Temperatures ◽  
Subcritical Water ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nickel Based Superalloy ◽  
Before And After

This work investigates the oxidation of a nickel based superalloy, namely Alloy X, in water at elevated temperatures: subcritical water at 261°C and 27 MPa, the transition between subcritical and supercritical water at 374°C and 27 MPa, and supercritical water at 380°C and 27 MPa for 100 hours. The morphology of the sample surfaces were studied using scanning electron microscopy coupled with focused ion beam milling, and the surface chemistry was investigated using X-ray diffraction, Raman spectroscopy, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy before and after exposure studies. Surfaces of all samples were identified to comprise of a ferrite spinel containing aluminum.

The Effect of Self-Implantation on the Interdiffusion in Amorphous Si/Ge Multilayers

1986 ◽  
Vol 74 ◽  
Author(s):  
B. Park ◽  
F. Spaepen ◽  
J. M. Poate ◽  
D. C. Jacobson
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Average Composition ◽  
X Ray ◽  
Composition Modulation ◽  
Beam Sputtering ◽  
Mixing Distance ◽  
Diffraction Peaks ◽  
Amorphous Si

AbstractArtificial amorphous Si/Ge multilayers of equiatomic average composition with a repeat length around 60 Å have been prepared by ion beam sputtering. Implantation with 29Si led to a decrease in the intensity of the X-ray diffraction peaks arising from the composition modulation, which could be used for an accurate measurement of the implantation-induced mixing distance. Subsequent annealing showed no difference between the interdiffusivity in an implanted and unimplanted sample.

scholarly journals Annealing of focused ion beam damage in gold microcrystals: an in situ Bragg coherent X-ray diffraction imaging study

2021 ◽  
Vol 28 (2) ◽  
pp. 550-565 ◽  
Author(s):  
David Yang ◽  
Nicholas W. Phillips ◽  
Kay Song ◽  
Ross J. Harder ◽  
Wonsuk Cha ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Imaging Study ◽  
X Ray Diffraction ◽  
Multiple Reflections ◽  
X Ray ◽  
Self Diffusion ◽  
Diffraction Imaging ◽  
Gold Microcrystals

Focused ion beam (FIB) techniques are commonly used to machine, analyse and image materials at the micro- and nanoscale. However, FIB modifies the integrity of the sample by creating defects that cause lattice distortions. Methods have been developed to reduce FIB-induced strain; however, these protocols need to be evaluated for their effectiveness. Here, non-destructive Bragg coherent X-ray diffraction imaging is used to study the in situ annealing of FIB-milled gold microcrystals. Two non-collinear reflections are simultaneously measured for two different crystals during a single annealing cycle, demonstrating the ability to reliably track the location of multiple Bragg peaks during thermal annealing. The thermal lattice expansion of each crystal is used to calculate the local temperature. This is compared with thermocouple readings, which are shown to be substantially affected by thermal resistance. To evaluate the annealing process, each reflection is analysed by considering facet area evolution, cross-correlation maps of the displacement field and binarized morphology, and average strain plots. The crystal's strain and morphology evolve with increasing temperature, which is likely to be caused by the diffusion of gallium in gold below ∼280°C and the self-diffusion of gold above ∼280°C. The majority of FIB-induced strains are removed by 380–410°C, depending on which reflection is being considered. These observations highlight the importance of measuring multiple reflections to unambiguously interpret material behaviour.

Morphological and Electrical Properties of Silver Thin Films Sputter Deposited on LTCC Substrates

2008 ◽  
Vol 5 (4) ◽  
pp. 169-173 ◽  
Author(s):  
A. Bittner ◽  
T. Bohnenberger ◽  
R. Engel ◽  
H. Seidel ◽  
U. Schmid
Keyword(s):  
Thin Films ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Plasma Power ◽  
X Ray Diffraction ◽  
Deposition Parameters ◽  
Mean Grain Size ◽  
Agglomeration Effects ◽  
Ag Deposition ◽  
Sputter Deposited

Screen printed noble metal thick films are commonly used as metallization on LTCC (low temperature cofired ceramics) substrates. When, however, geometries with a lateral resolution below 20 μm are needed for the realization of devices, alternative techniques are needed, and they are provided by standard thin film technology. To minimize conduction losses, silver (Ag) is favored due to a low bulk resistivity. To evaluate the potential of Ag as metallization, thin films are sputter deposited on glass and LTCC substrates under varying conditions (i.e., plasma power) with different film thicknesses ranging up to 1.75 μm. The microstructure of the Ag films is analyzed applying techniques such as scanning electron microscopy, focused ion beam, and x-ray diffraction. With the latter approach, a mean grain size of about 33 nm is measured independent of plasma power used for Ag deposition. In contrast, the texture strongly varies with deposition parameters resulting in an enhanced generation of (111) planes at higher plasma powers due to an increased adatom mobility. Furthermore, a higher degree in (111) orientation results in a lower resistivity of the Ag films. When the Ag films are postdeposition annealed at 500°C, the resistivity decreases by a factor of 2 compared with the “as deposited” state due to grain growth. Further, sublimation and agglomeration effects dominate leading to an increase in surface roughness and resistivity above average.

Contamination Effects in Mo/Ni Superlattices

1991 ◽  
Vol 229 ◽  
Author(s):  
Steven M. Hues ◽  
John L. Makous
Keyword(s):  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ion Beam ◽  
Bilayer Thickness ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Impurity Incorporation ◽  
X Ray ◽  
Beam Sputtering ◽  
Deposited Films

AbstractA softening of the shear elastic constant c44 has been observed previously in Mo/Ni superlattices as a function of decreasing bilayer thickness below approximately 100 Å.[1] We have prepared a series of Mo/Ni superlattice films by ion beam sputtering doped with varying concentrations of either aluminum or oxygen. The chemical and structural properties of these films were then determined using x-ray diffraction (XRD) and Auger electron spectroscopy (AES). The shear elastic properties were characterized by measuring the surface acoustic wave (SAW) velocity of the deposited films. We demonstrate structural and elastic property effects resulting from Al and O impurity incorporation in Mo/Ni multilayers.

On radiation damage in FIB-prepared softwood samples measured by scanning X-ray diffraction

2015 ◽  
Vol 22 (2) ◽  
pp. 267-272 ◽  
Author(s):  
Selina Storm ◽  
Malte Ogurreck ◽  
Daniel Laipple ◽  
Christina Krywka ◽  
Manfred Burghammer ◽  
...  
Keyword(s):  
Cell Wall ◽  
Radiation Damage ◽  
Focused Ion Beam ◽  
Complex Geometry ◽  
Ion Beam ◽  
Wall Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
First Time ◽  
Interesting System

The high flux density encountered in scanning X-ray nanodiffraction experiments can lead to severe radiation damage to biological samples. However, this technique is a suitable tool for investigating samples to high spatial resolution. The layered cell wall structure of softwood tracheids is an interesting system which has been extensively studied using this method. The tracheid cell has a complex geometry, which requires the sample to be prepared by cutting it perpendicularly to the cell wall axis. Focused ion beam (FIB) milling in combination with scanning electron microscopy allows precise alignment and cutting without splintering. Here, results of a scanning X-ray diffraction experiment performed on a biological sample prepared with a focused ion beam of gallium atoms are reported for the first time. It is shown that samples prepared and measured in this way suffer from the incorporation of gallium atoms up to a surprisingly large depth of 1 µm.

Reaction Kinetics of Sputter-Deposited Ti On SiO2 Substrates during Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
E.J. Yun ◽  
H.G. Chun ◽  
K. Jung ◽  
D.L. Kwong ◽  
S. Lee
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Kinetics Of

ABSTRACTIn this paper, the interactions of sputter-deposited Ti on SiO2 substrates during rapid thermal annealing in nitrogen at 550°C - 900°C for 10 - 60 s have been systematically studied using X-ray diffraction, Auger electron spectroscopy, transmission electron diffraction, TEM & cross-sectional TEM, and sheet resistance measurements.

Effect of Current Density on Anodised Titanium in Mixture of β-Glycerophosphate (β-GP) and Calcium Acetate (CA)

2015 ◽  
Vol 1087 ◽  
pp. 212-217 ◽  
Author(s):  
Hasan Zuhudi Abdullah ◽  
Te Chuan Lee ◽  
Maizlinda Izwana Idris ◽  
Charles Christopher Sorrell
Keyword(s):  
Current Density ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ceramic Coatings ◽  
Disodium Salt ◽  
Calcium Acetate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ceramic Films ◽  
Glancing Angle

Anodic oxidation is an electrochemical method for the production of ceramic films on a metallic substrate. It had been widely used to deposit the ceramic coatings on the metals surface. In this study, the surface morphology and crystallinity of titanium foil was modified by anodising in mixture of β-glycerophosphate disodium salt pentahydrate (β-GP) and calcium acetate monohydrate (CA). The experiments were carried out at high voltage (350 V), different anodising time (1, 3, 5 and 10 min) and current density (10 and 20 mA.cm-2) at room temperature. Anodised titanium was characterised by using glancing angle X-ray diffraction (GAXRD), field emission scanning electron microscope (FESEM) and focused ion beam (FIB) milling. The result of the experiment show that colour, porosity, crystallinity and thickness of the titanium films depended strongly on the current density. More porous surface and large amount of anatase was produced at higher current density. FIB results indicated that the thickness of oxide layer increased as increasing of current density.

Thermodynamic and Structural Properties of Mev Ion Beam Amorphized Silicon

1989 ◽  
Vol 157 ◽  
Author(s):  
S. Roorda ◽  
W.C. Sinke ◽  
J.M. Poate ◽  
D.C. Jacobson ◽  
P. Fuoss ◽  
...  
Keyword(s):  
Differential Scanning Calorimetry ◽  
Raman Spectroscopy ◽  
Structural Properties ◽  
Atomic Structure ◽  
Structural Relaxation ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Amorphous Si

ABSTRACTThermodynamic and structural properties of amorphous Si (a-Si), prepared by MeV 28Si+-ion implantation are investigated by differential scanning calorimetry, Raman spectroscopy and X-ray diffraction. The influence of thermal annealing below 500 °C on a-Si is investigated with these different probes. The observed changes result from structural relaxation. Raman spectroscopy and X-ray diffraction show that structural relaxation is accompanied by changes in the average atomic structure.

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