Aluminum-Ion Implantation into 4H-SiC (11-20) and (0001)

2004 ◽  
Vol 815 ◽  
Author(s):  
Y. Negoro ◽  
T. Kimoto ◽  
H. Matsunami
Keyword(s):  
High Temperature ◽  
Sheet Resistance ◽  
Room Temperature ◽  
Dose Dependence ◽  
High Dose ◽  
High Temperature Annealing ◽  
Aluminum Ion ◽  
Hall Effect Measurements ◽  
Short Time ◽  
Surface Morphologies

AbstractHigh-dose aluminum-ion (Al+) implantation into 4H-SiC (11-20) and (0001) has been investigated. Surface morphologies of implanted (0001) samples were improved by annealing with a graphite cap. Implant-dose dependence and annealing-time dependence of electrical properties are examined by Hall-effect measurements. A low sheet resistance of 2.3 kΩ/sq. was obtained in (0001) by high-dose Al+ implantation at 500 °C with a dose of 3.0 × 1016 cm−2 and high-temperature annealing at 1800 °C for a short time of 1 min. In the case of (11-20), even room-temperature implantation brought a low sheet resistance below 2 kΩ/sq. after annealing at 1800 °C.

Achieving Low Sheet Resistance from Implanted P-Type Layers in 4H-SiC Using High Temperature Graphite Capped Annealing

2007 ◽  
Vol 556-557 ◽  
pp. 567-570
Author(s):  
Y. Wang ◽  
Peter A. Losee ◽  
S. Balachandran ◽  
I. Bhat ◽  
T. Paul Chow ◽  
...  
Keyword(s):  
High Temperature ◽  
Sheet Resistance ◽  
Ionization Energy ◽  
Room Temperature ◽  
Arrhenius Plot ◽  
High Temperature Annealing ◽  
Graphite Layer ◽  
Low Resistance ◽  
P Type ◽  
Post Implantation

Low resistance p-layers are achieved in this paper using a graphite cap to protect SiC surface from out-diffusion of Si during high temperature post-implantation annealing, which is carried out to maximize the activation of Al dopant in 4H-SiC. With a graphite layer converted from photoresist, as high as 1700 and 1800oC post-implantation annealing is able to be used. Low RMS roughness of surface after high temperature annealing shows the effectiveness of the graphite cap. Small sheet resistance and resistivity are also achieved from the high temperature annealing. At room temperature, sheet resistances of 9.8 and 1.3 k/□, and the corresponding resistivities of 235 and 31 m-cm are obtained from 1700 and 1800oC annealed samples, respectively. The Al ionization energy extracted from Arrhenius plot is also close to the typical reported values. Therefore, it can be concluded that, using graphite cap could help to activate the Al dopant effectively during high temperature annealing.

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

An Electrical and Physical Study of Crystal Damage in High-Dose Al- and N-Implanted 4H-SiC

2017 ◽  
Vol 897 ◽  
pp. 411-414 ◽  
Author(s):  
Craig A. Fisher ◽  
Romain Esteve ◽  
Stefan Doering ◽  
Michael Roesner ◽  
Martin de Biasio ◽  
...  
Keyword(s):  
High Temperature ◽  
Room Temperature ◽  
High Dose ◽  
Stress Determination ◽  
Analysis Techniques ◽  
Physical Study ◽  
Crystal Damage ◽  
Activation Annealing ◽  
Anneal Temperature ◽  
High Dose Implantation

In this paper, an investigation into the crystal structure of Al-and N-implanted 4H-SiC is presented, encompassing a range of physical and electrical analysis techniques, with the aim of better understanding the material properties after high-dose implantation and activation annealing. Scanning spreading resistance microscopy showed that the use of high temperature implantation yields more uniform resistivity profiles in the implanted layer; this correlates with KOH defect decoration and TEM observations, which show that the crystal damage is much more severe in room temperature implanted samples, regardless of anneal temperature. Finally, stress determination by means of μRaman spectroscopy showed that the high temperature implantation results in lower tensile stress in the implanted layers with respect to the room temperature implantation samples.

The Behavior of Ion Implanted Silicon During Ultra-High Temperature Annealing

2006 ◽  
Vol 912 ◽  
Author(s):  
Amitabh Jain
Keyword(s):  
High Temperature ◽  
Time Scale ◽  
Short Time Scale ◽  
Successful Implementation ◽  
High Temperature Annealing ◽  
Promising Technique ◽  
Final Profile ◽  
Short Time ◽  
Ultra High Temperature ◽  
Ion Implanted

AbstractUltra-high temperature annealing is emerging as a promising technique for annealing ion implanted layers with a view to maximizing electrical activation while minimizing dopant diffusion. In order to ensure successful implementation, several materials-related problems have been under study. Since the time scale of the process is short, diffusion in the amorphous phase may dominate the final profile. In general, the residual disorder after anneal can be higher than with current anneal processes. However, the short time scale of the process curtails the opportunity for movement of dislocations into regions where the electrical behavior of a device would be affected. An additional effect of the limited time scale is the ability of silicon to plasto-elastically support the high strain-rates that may arise during the anneal.

Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC

2007 ◽  
Vol 556-557 ◽  
pp. 371-374 ◽  
Author(s):  
Andreas Gällström ◽  
Björn Magnusson ◽  
Patrick Carlsson ◽  
Nguyen Tien Son ◽  
Anne Henry ◽  
...  
Keyword(s):  
High Temperature ◽  
Cooling Rate ◽  
High Purity ◽  
Room Temperature ◽  
Deep Levels ◽  
High Temperature Annealing ◽  
Cooling Rates ◽  
Silicon Vacancy

The influence of different cooling rates on deep levels in 4H-SiC after high temperature annealing has been investigated. The samples were heated from room temperature to 2300°C, followed by a 20 minutes anneal at this temperature. Different subsequent cooling sequences down to 1100°C were used. The samples have been investigated using photoluminescence (PL) and IV characteristics. The PL intensities of the silicon vacancy (VSi) and UD-2, were found to increase with a faster cooling rate.

High-Temperature Compression Testing of Graphite

1953 ◽  
Vol 20 (2) ◽  
pp. 289-294
Author(s):  
Leon Green
Keyword(s):  
Tensile Strength ◽  
Compressive Strength ◽  
High Temperature ◽  
Stress Relaxation ◽  
Temperature Control ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Limited Degree ◽  
Relaxation Curves ◽  
Short Time

Abstract Experiments on the compression of graphite cylinders at elevated temperatures are described. It is found that the short-time compressive strength increases with temperature in the range from room temperature to 2000 C, a variation which is consistent with the previously reported behavior of the tensile strength. Photographs of typical modes of deformation and their corresponding stress-strain curves are presented, but a limited degree of temperature control renders the curves semiquantitative in nature. The large, mutually opposing influences of temperature and strain rate are illustrated by photographs of typical failures, and stress-relaxation curves manifest the plasticity of graphite at high temperatures.

High-Quality SOI by Oxygen Implantation into Silicon

1987 ◽  
Vol 93 ◽  
Author(s):  
A. H. van Ommen ◽  
H. J. Ligthart ◽  
J. Politiek ◽  
M. P. A. Viegers
Keyword(s):  
High Temperature ◽  
Silicon Film ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Quality ◽  
Cubic Symmetry ◽  
Buried Oxide ◽  
Simple Cubic ◽  
Precipitate Growth

ABSTRACTHigh quality Silicon-On-Insulator, with a dislocation density lower than 105cm−2, has been formed by high temperature annealing of high-dose oxygen implanted silicon. In the as-implanted state, oxygen was found to form precipitates in the top silicon film. In the upper region these precipitates were found to order into a superlattice of simple cubic symmetry. Near the interface with the buried oxide film the precipitates are larger and no ordering occurs in that region. Contrary to implants without precipitate ordering where dislocations are observed across the entire layer thickness of the top silicon film, dislocations are now only found near the buried oxide. The precipitate ordering appears to prevent the dislocations to climb to the surface. High temperature annealing results in precipitate growth in this region whereas they dissolve elsewhere. These growing precipitates pin the dislocations and elimination of precipitates and dislocations occurs simultaneously, resulting in good quality SOI material.

Dose Dependence of Defects in Silicon Produced by High Dose, High Temperature O+ Implantation

1986 ◽  
Vol 10-12 ◽  
pp. 1159-1164 ◽  
Author(s):  
A. Hobbs ◽  
R.C. Barklie ◽  
K.J. Reeson ◽  
P.L.F. Hemment
Keyword(s):  
High Temperature ◽  
Dose Dependence ◽  
High Dose

Precipitation in silicon-on-insulator material during high- temperature annealing

1987 ◽  
Vol 45 ◽  
pp. 254-255
Author(s):  
S. J. Krause ◽  
C. O. Jung ◽  
S.R. Wilson
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Annealing Time ◽  
High Speed ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
Precipitate Size ◽  
High Dose ◽  
High Temperature Annealing ◽  
Implantation Energy

Silicon-on-insulator (SOI) structure by high dose oxygen implantation (SIMOX) has excellent potential for use in radiation hardened and high speed integrated circuits. Device fabrication in SIMOX requires a high quality superficial Si layer above the buried oxide layer. Previously we reported on the effect of heater temperature, background doping, and annealing cycle on precipitate size, density, and location in the superficial Si layer. Precipitates were not eliminated with our processing conditions, but various authors have recently reported that high temperature annealing of SIMOX, from 1250°C to 1405°C, eliminates virtually all precipitates in the superficial Si layer. However, in those studies there were significant differences in implantation energy and dose and also annealing time and temperature. Here we are reporting on the effect of annealing time and temperature on the formation and changes in precipitates.

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