Simultaneous Effects on Topography, Composition and Texture in Ion Assisted Deposition of Thin Films

2004 ◽  
Vol 843 ◽  
Author(s):  
James M.E. Harper
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Crystallographic Texture ◽  
Crystallographic Orientation ◽  
Ion Bombardment ◽  
Metal Alloys ◽  
Polycrystalline Materials ◽  
Nanoscale Structures ◽  
Patterned Materials ◽  
Deposition Conditions

ABSTRACTIon bombardment during deposition may simultaneously affect thin film topography, composition and crystallographic texture. Ion etching can produce periodic ripples that depend on the angle of ion incidence and surface temperature. When applied during deposition, ion bombardment can produce in-plane crystallographic orientation in polycrystalline materials for specific angles of incidence. In addition, ion bombardment changes the composition of multicomponent thin films according to the local angles of ion incidence and ion/atom ratios. Therefore, these three mechanisms may be linked under certain deposition conditions to generate novel topographically patterned materials with locally controlled composition and texture. Examples include metal alloys, oxides and nitrides, and recommendations for specific nanoscale structures are given.

Reactive Phase Formation in Thin Films: Evolution of Grain Structure

1995 ◽  
Vol 403 ◽  
Author(s):  
K. Barmak ◽  
C. Michaelsent ◽  
J. Rickman ◽  
M. Dahmstt
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Formation ◽  
Experimental Studies ◽  
Grain Structure ◽  
Structure Evolution ◽  
Future Research ◽  
Polycrystalline Materials ◽  
Product Phase ◽  
Nucleation Kinetics

AbstractIt is a well known fact that the properties and performance of polycrystalline materials, including polycrystalline thin films, are strongly affected by the grain structure. Therefore, in treating reactive phase formation in these films, it is (or it will inevitably be) necessary to quantify the grain structure of reactant and product phases and its evolution during the course of the reaction. Theoretical models and the conventional view of thin film reactions, however, have been largely extensions, to small and finite dimensions, of theories and descriptions developed for bulk diffusion couples. These models and descriptions primarily focus on the growth stage and to a much lesser extent on the nucleation stage. Consequently, these models and descriptions are not able to treat the development of product phase grain structure. Recent calorimetric investigations of several thin film systems demonstrate the importance of nucleation kinetics (and hence nucleation barriers) in product phase formation and provide quantitative measures of the thermodynamics and kinetics of formation of the product phases, thereby allowing some degree of comparison with reaction models. Furthermore, microstructural investigations of thin-film reactions demonstrate the non-planarity of the growth front and highlight the role of reactant-phase grain boundaries. In this paper, a summary of these experimental studies and recent theoretical treatments, which combine nucleation and growth in an integrated manner, is presented, with particular emphasis on the Nb/Al system. These experiments and models lead to a new view of reactive phase formation and grain structure evolution as one in which the latter is an integral part of the former. Based on this view, directions for future research are discussed.

Ion Beam Processing of Optical Thin Films

1989 ◽  
Vol 152 ◽  
Author(s):  
U. J. Gibson
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Sensitive Function ◽  
Deposition Conditions

ABSTRACTThe microstructure and optical properties of vacuum evaporated coatings are a sensitive function of the deposition conditions. In recent years, ion bombardment has been used increasingly for the production of denser, more stable coatings of oxides and other materials. In addition to modifying the microstructure, ion bombardment is emerging as a valuable tool for altering the composition (and hence the optical properties) of thin films. A discussion of the effects of ion beam processing and the methods used to analyze the changes in these films is presented.

Crystallographic Texture of MgO and its Effect on the Growth of BaTiO3 Thin Films by RF Sputtering

2007 ◽  
Vol 546-549 ◽  
pp. 2175-2178
Author(s):  
Liang Qiao ◽  
Xiao Fang Bi
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Crystallographic Texture ◽  
Great Influence ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
High Substrate Temperature ◽  
Argon Pressure ◽  
Structure And Microstructure ◽  
Deposition Conditions

In this work, MgO thin films were prepared by rf magnetron sputtering technique on two different substrates of Si (100) wafers and amorphous glasses. The influence of different deposition conditions such as substrate temperature, Ar pressure, film thicknesses on the crystal structure of MgO thin films were studied. BaTiO3 ferroelectric thin films were subsequently deposited on the MgO films. The XRD results showed that the orientation of MgO films was dependent greatly on the substrate temperature. A highly (100) oriented MgO thin films were obtained at the temperature of 800°C. The crystallographic texture has been deteriorated rapidly as the argon pressure decreased to 1.0 Pa. It has been also found that the film thickness has a great influence on the film orientation. High substrate temperature, high argon pressure and a certain thickness appear to be favorable for formation of a good texture for the MgO films. The structure and microstructure of the BaTiO3 films were various both with deposition conditions and with the crystallographic texture of the MgO. A highly (001) oriented ferroelectric BTO film was obtained on the MgO films with an optimized deposition conditions.

EFFECT OF ENERGETIC ION BOMBARDMENT DURING THE GROWTH OF HYDROGENATED AMORPHOUS CARBON THIN FILMS

2015 ◽  
Vol 7 (2) ◽  
pp. 1823-1828
Author(s):  
Asim Aijaz ◽  
Zaheer Uddin
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Amorphous Carbon ◽  
Film Growth ◽  
Ion Bombardment ◽  
High Density ◽  
Thin Film Growth ◽  
Buffer Gas ◽  
Hydrogenated Amorphous Carbon ◽  
Hydrogenated Amorphous

Hydrogenated amorphous carbon (a-C:H) thin film growth using plasma-assisted deposition is studied using Monte Carlo based simulation. The effect of energetic bombardment of the ionized depositing species as well as ionized buffer gas species on the film growth and the resulting film properties is investigated. The ion energies that assist the a-C:H film growth from low density structures to high density structures such as diamond-like carbon (DLC) are used and the effect of energy and composition of the depositing species on the C-C and C-H bonding and the film structure are analyzed. It is found that the ion bombardment favors the formation of a-C:H films with low H contents, high density and superior mechanical strength of the resulting thin films and is therefore an effective way to tailor-made a-C:H thin film growth for specific applications.

Physical properties of spinel iron oxide thin films

1988 ◽  
Vol 3 (2) ◽  
pp. 344-350 ◽  
Author(s):  
C. Ortiz ◽  
G. Lim ◽  
M. M. Chen ◽  
G. Castillo
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Physical Properties ◽  
Room Temperature ◽  
Lattice Parameter ◽  
Infrared Transmission ◽  
Transmission Properties ◽  
Annealing Conditions ◽  
Deposition Conditions

This paper describes the complexity of the spinel iron oxides in thin-film configuration. First, the experimental deposition conditions are determined for the parameters of substrate temperature and oxygen flow such that only the “Fe3O4” phase is formed. Then a study is made of how the structural (grain size, lattice parameter, texture), magnetic (M), and optical (visible and infrared transmission) properties of the films depend on the deposition and postdeposition (air annealing) conditions. The experimental deposition region is defined where the films have the most similar physical properties to bulk Fe3O4 and subsequently, after annealing, to bulk gamma Fe2O3. Finally, a discussion is presented of a model that accounts for the anomalous, low values of the magnetic moment for the samples deposited at room temperature. The model proposes an overpopulation of the iron tetrahedral A sites.

Ferroelastic Domains and Anisotropy in Lead Free Piezoelectrics

2011 ◽  
Vol 702-703 ◽  
pp. 995-998
Author(s):  
Bin Zhi Li ◽  
Chris Fancher ◽  
John E. Blendell ◽  
R. Edwin Garcia ◽  
Keith J. Bowman
Keyword(s):  
Thin Film ◽  
Crystallographic Texture ◽  
Piezoelectric Materials ◽  
Ferroelectric Domain ◽  
Lead Free ◽  
Polycrystalline Materials ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ferroelastic Domains ◽  
2D And 3D

Our research investigates the correlations between domain texture and microstructural features, including crystallographic texture in bulk and thin film polycrystalline materials to understand the development of piezoelectric and other anisotropic properties in a number of rapidly evolving lead free piezoelectric materials. We investigate approaches to understanding polarization distributions by starting from polarization measurements. In addition, 2D and 3D microstructural simulations are carried out in all types of ferroelectrics to rationalize and then engineer their equilibrium and kinetic response. This paper discusses recent findings associated with bulk piezoelectricity, phase stability, and ferroelastic and ferroelectric domain motion for materials such as Ba(Ti0.8Zr0.2)O3-x(Ba0.7Ca0.3)TiO3 (BZT-BCT) and Bi0.5Na0.5TiO3 (BNT). Conventional and synchrotron-based x-ray diffraction, electron and optical microscopy and piezoelectric characterization techniques are employed to assess texture, both as a function of poling and temperature. The coupling between microstructure and the inherent directional biases fundamental to piezoelectric and ferroelectric performance enable consideration of orientation and anisotropy in systems with unique constraints.

Effect of Deposition Conditions on TiO2 Thin Film on Silica Glass Fibers by Liquid Phase Deposition

2007 ◽  
Vol 336-338 ◽  
pp. 1921-1923
Author(s):  
Shun Li ◽  
Jia Chen Liu ◽  
Chao Liang Cui ◽  
Li Bin Liu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silica Glass ◽  
Glass Fibers ◽  
Growth Patterns ◽  
Liquid Phase Deposition ◽  
Tio2 Thin Films ◽  
Experimental Conditions ◽  
Nano Crystalline ◽  
Deposition Conditions

Crystalline TiO2 thin films coated on silica glass fibers and nano-powders were prepared by adding H3BO3 into an (NH4)2TiF6 solution supersaturated with anatase nano-crystalline TiO2 at 40°C. The effect of the deposition conditions on the surface morphology, section morphology, growth patterns, thicknesses of the deposited TiO2 thin films were investigated. Growth rate and particle size of the thin films were controlled by the deposition conditions. As a result, a well-combined and durable TiO2 thin films on silica glass fibers surface obtained under definite optimizing experimental conditions and parameters.

The Deposition of Aluminum and Aluminum Boride Thin Films by Aluminaborane Cluster Compounds

1990 ◽  
Vol 204 ◽  
Author(s):  
John A. Glass ◽  
Shreyas Kher ◽  
Stephen D. Hersee ◽  
G. Ramseyer ◽  
James T. Spencer
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Cluster Compounds ◽  
Semiconductor Materials ◽  
Aluminum Boride ◽  
Borane Cluster ◽  
Active Investigation ◽  
Deposition Conditions

ABSTRACTThe preparation of aluminum-containing thin film materials by MOCVD and MOMBE for use in III-V semiconductor materials, such as HEMT devices, is currently under active investigation. The preparation of uniform, conformal aluminum and boron containing thin film materials from the chemical vapor deposition (CVD) of aluminum borane cluster precursor compounds has been studied. A variety of substrates, deposition conditions and aluminaborane precursors have been explored and their effect on film composition, growth rate and thin film morphology has been investigated. The thermal depositions of aluminum and boron-containing thin films from aluminum borohydride, AI(BH4)3, on copper, SiO2 and GaAs are reported. Boron incorporation in the films vary depending on substrate temperature, aluminaborane flow and the presence or absence of a H2 carrier. These films have been characterized by SEM, AES and XES.

scholarly journals Grain Size and Phase Transformation Behavior of TiNi Shape-Memory-Alloy Thin Film under Different Deposition Conditions

Materials ◽  
2020 ◽  
Vol 13 (14) ◽  
pp. 3229
Author(s):  
Joohyeon Bae ◽  
Hyunsuk Lee ◽  
Duckhyeon Seo ◽  
Sangdu Yun ◽  
Jeonghyeon Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Shape Memory Alloy ◽  
Substrate Temperature ◽  
Shape Memory ◽  
High Speed ◽  
Alloy Thin Film ◽  
Bulk Alloys ◽  
Deposition Conditions

TiNi shape-memory-alloy thin films can be used as small high-speed actuators or sensors because they exhibit a rapid response rate. In recent years, the transformation temperature of these films, manufactured via a magnetron sputtering method, was found to be lower than that of the bulk alloys owing to the small size of the grain. In this study, deposition conditions (growth rate, film thickness, and substrate temperature) affecting the grain size of thin films were investigated. The grain size of the thin film alloys was found to be most responsive to the substrate temperature.

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