High Planarization Efficiency and Wide Process Window Using Electro-chemical Mechanical Planarization (EcmpTM)

2005 ◽  
Vol 867 ◽  
Author(s):  
Feng Q Liu ◽  
Liang Chen ◽  
Alain Duboust ◽  
Stan Tsai ◽  
Antoine Manens ◽  
...  
Keyword(s):  
Applied Voltage ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Copper Film ◽  
Process Window ◽  
Factors Affecting ◽  
Profile Control ◽  
Planarization Process ◽  
Rate Controlled ◽  
Electrochemical Removal

AbstractEcmpTM is a revolutionary planarization technology uniquely combining removal rate controlled by charge with superior planarization efficiency in the near no shear regime. In addition, the electrochemical removal mechanism has excellent within-wafer profile control. Multiple electrical zones configuration combined with a precise end-point control by electric charge, make it more predictable to control the remaining thickness and profile of copper film. The factors affecting the planarization such as the concentration and the efficiency of the inhibitors will be discussed in this paper. Meanwhile a planarization mechanism for Ecmp will be proposed to match the high planarization efficiency. The effects of applied voltage on removal rate and planarization efficiency will be presented in this paper. The electrical feature allows Ecmp to be a planarization process with removal rate independent of down force, enabling a wide removal rate window based on applied voltage.

Effects of Additives in KOH Based Electrolytes on Cu ECMP

2007 ◽  
Vol 991 ◽  
Author(s):  
Tae-Young Kwon ◽  
In-Kwon Kim ◽  
Jin-Goo Park
Keyword(s):  
Citric Acid ◽  
Applied Voltage ◽  
Counter Electrode ◽  
Corrosion Potential ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Corrosion Current ◽  
Dynamic State ◽  
Static State ◽  
Potentiodynamic Curves

ABSTRACTThe purpose of this study was to characterize KOH based electrolytes and effects of additives on electro-chemical mechanical planarization. The electrochemical mechanical polisher was made to measure the potentiodynamic curve and removal rate of Cu. The potentiodynamic curves were measured in static and dynamic states in investigated electrolytes using a potentiostat. Cu disk of 2 inch was used as a working electrode and Pt electroplated platen was used as a counter electrode. KOH was used as the electrolyte. H2O2 and citric acid were used as additives for the ECMP of Cu. In static and dynamic potentiodynamic measurements, the corrosion potential decreased and corrosion current increased as a function of KOH concentration. In dynamic state, different potentiodynamic curve was obtained when compared to the static state. The current density did not decrease in passivation region by mechanical polishing effect. The static etch and removal rate were measured as function of KOH concentration and applied voltage. In ECMP system, polishing was performed at 30 rpm and 1 psi. The removal rate was about 60 nm/min at 0.3 V when 5 wt% KOH was used. Also, the effect of additive was investigated in KOH based electrolyte on removal rates. As a result, The removal rate was increased to 350 nm/min when 5wt% KOH, 5vol% H2O2, 0.3 M citric acid were used.

Corrosion Inhibiting Effect on Copper Chemical Mechanical Planarization (CMP) in Fe(NO3)3 Based Slurries

2005 ◽  
Vol 291-292 ◽  
pp. 395-400
Author(s):  
Dong Ming Guo ◽  
X.J. Li ◽  
Zhu Ji Jin ◽  
Ren Ke Kang
Keyword(s):  
Surface Roughness ◽  
Large Scale ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Etching Rate ◽  
Copper Surface ◽  
Force Microscopy ◽  
Composition Modification ◽  
Planarization Process ◽  
Analysis System

The slurry of Copper chemical mechanical planarization for ultra large-scale integrate circuit (ULSI) usually contains oxidizer, etchant, complexing reagent and corrosive inhibitor. In planarization process, the corrosive inhibitor has an important effect on the planarization. Only if the concave surface of the wafer is properly protected from corrosion by the inhibitor, the process can obtain perfect surface planarity. In this paper, with Fe(NO3)3 as an oxidant and several corrosive inhibitors selected, the corrosive efficiency of slurries are investigated. The static etching rate and the polishing material removal rate of wafer are obtained. The electrochemical behavior of the slurry is investigated by the potentiodynamic polarization studies. And the inhibitive efficiency of the related corrosive inhibitors is calculated from the polarization data. X-ray diffraction is applied to analyze the composition modification of the copper surface. Atom force microscopy is applied to measure the surface topography of corrosive copper wafer and the value of surface roughness is measured by ZYGO surface analysis system. The result shows that the benzotriazole (BTA) is a perfect corrosive inhibitor. With addition of 0.1wt% BTA into 1.5wt% Fe(NO3)3 solution, the inhibitive efficiency can reach 99.1%. The polishing test shows that if only 1.5wt% Fe(NO3)3 is added as an oxidizer without any other additive, the surface roughness of the polished wafer is 26.9Å, while with 0.1wt%BTA added in the meantime, 5.2 Å of surface roughness can be obtained.

Effect of Pad Surface Micro-Texture on Removal Rate during Interlayer Dielectric Chemical Mechanical Planarization Process

2013 ◽  
Vol 52 (1R) ◽  
pp. 018001 ◽  
Author(s):  
Xiaoyan Liao ◽  
Yun Zhuang ◽  
Leonard J. Borucki ◽  
Jiang Cheng ◽  
Siannie Theng ◽  
...  
Keyword(s):  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Interlayer Dielectric ◽  
Planarization Process

Investigation of Correlation between Polishing Characteristic and Pad Roughness during Chemical Mechanical Planarization Process

2012 ◽  
Vol 488-489 ◽  
pp. 831-835
Author(s):  
Hojoong Kim ◽  
Andy Kim ◽  
Tae Sung Kim
Keyword(s):  
Integrated Circuit ◽  
Material Removal ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Life Time ◽  
Feature Size ◽  
3 Dimensional ◽  
Planarization Process ◽  
Scanning Electron

The Chemical mechanical planarization (CMP) process has become a primary planarization technique required for the manufacture of advanced integrated circuit (IC) devices. As the feature size of IC chips shrinks down to 65 nm and below, the role of CMP as a robust planarization process becomes increasingly important. In this work, we evaluated surface roughness of CMP pad to correlate the roughness with CMP performance such as material removal rate (MRR) and pad lifetime. Pad surface was analyzed by 3-dimensional profiler and scanning electron microscope (SEM). We found that MRR could be varied with the pad life time and roughness. We also found that suitable roughness range is exist to get stable CMP performance. Finally, we introduced ‘pre-conditioning’ method to manage the roughness of CMP pad to get stable CMP performance at the initial pad life time.

Fixed Abrasive Technology for STI CMP on a Web Format Tool

2001 ◽  
Vol 671 ◽  
Author(s):  
Alexander Simpson ◽  
Laertis Economikos ◽  
Fen-Fen Jamin ◽  
Adam Ticknor
Keyword(s):  
Slow Rate ◽  
Removal Rate ◽  
Deposition Process ◽  
Good Choice ◽  
Process Window ◽  
Integration Schemes ◽  
Trench Isolation ◽  
Planarization Process ◽  
Oxide Removal ◽  
Fixed Abrasive

ABSTRACTShallow trench isolation (STI) requires a high quality oxide with superior fill capability provided by High Density Plasma (HDP) oxide. Unfortunately, the HDP deposition process can create large within die topographies that are difficult to polish directly using conventional silica slurries. As a result, etch back integration schemes have traditionally been incorporated for STI polish. A more revolutionary approach is the use of Fixed Abrasive (FA) CMP [1]. FA CMP allows direct STI polish with good planarization/process stability, eliminating the need for prior etch back. The planarization efficiency is strongly dependent on the shape of the pad composites that hold the CeO2 mineral. Fixed abrasive pads with pyramid and pole shapes are available. In this work, three different fixed abrasive pads supplied by 3M corporation were evaluated for STI CMP polish performance using the Obsidian 8200C web format CMP tool. Basic polish characteristics such as planarity (dependence on sub-pad/pattern density), selectivity to topography, oxide dishing and nitride erosion are presented. The FA pads discussed here have been classified as “slow”, “medium” or “fast” depending on blanket oxide removal rate.The slow rate pad had a very high selectivity to topography and very low dishing of the down area oxide. The removal rate of blanket oxide was less than 100 Å/min. The pad was best suited to the polish of isolation trench structures with small, controlled overfill (> 200 Å) across the wafer. A large process window was demonstrated. The removal rate of the “medium” pad also decreased significantly at the onset of planarization with a blanket oxide removal rate of ca. 200 Å/min. Unlike the slow rate pad, the medium rate pad did not provide a suitable overpolish process window required for a manufacturable STI process. It is believed this pad would be a good choice for BPSG polish. In contrast to the slow and medium rate pads, the blanket oxide removal rate of the fast pad was ca. 2000 Å/min with no self-stopping capability at the onset of planarization. The removal rate was extremely center fast, such that it could not be compensated by adjustment of tool parameters. Use of a modified process developed within the DRAM development alliance (DDA) at East Fishkill (IBM/ Infineon) enabled the fast pad to polish deep STI structures that would otherwise be impossible using the slow or medium rate pads.

Effect of Flow Rate of Slurry in Micro-Channels on the Consistency of Polishing Rate

2015 ◽  
Vol 645-646 ◽  
pp. 462-468
Author(s):  
Yan Li ◽  
Ming Sun ◽  
Yu Ling Liu ◽  
Ao Chen Wang ◽  
Ji Ying Tang ◽  
...  
Keyword(s):  
Removal Rate ◽  
Copper Film ◽  
Liquid Temperature ◽  
Technological Parameters ◽  
Mean Velocity ◽  
Working Pressure ◽  
Micro Channels ◽  
Planarization Process ◽  
Central Composite ◽  
Main Factor

According to the Bernoulli equation and Darcy formula, the flow model of slurry in micro-channels was established, it indicated that slurry viscosity is the main factor affecting the slurry mean velocity. According to the characteristics that liquid viscosity is mainly determined by the liquid temperature and the property that mechanical friction can improve the liquid temperature, the effects of slurry temperature, working pressure and polishing speed on the heterogeneity of polishing rate were investigated. The results showed that the effect of removal rate of each parameter on the central part of the copper film can be described as: slurry temperature > working pressure > polishing speed. In order to obtain the best planarization process, through the central composite experimental method, the technological parameters were optimized regarding the heterogeneity of polishing rate as response value. It was finally concluded that: when the slurry temperature was 21.60°C, the working pressure was 8.83kpa, the system speed was 43.92rpm, the predicted minimum value of the heterogeneity of polishing rate (HOPR) was 0.0574.

Mechanistic Understanding of Material Detachment During CMP Processing

2002 ◽  
Vol 732 ◽  
Author(s):  
Wei Che ◽  
Yongjin Guo ◽  
Ashraf Bastawros ◽  
Abhijit Chandra
Keyword(s):  
Material Removal ◽  
Defect Formation ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Copper Film ◽  
Integrated Approach ◽  
Numerical Approach ◽  
Dynamics Simulation ◽  
Continuum Scale ◽  
Deformation Patterns

AbstractA combined experimental and numerical approach has been devised to understand the abrasion aspects of material removal mechanisms of ductile copper film on silicon wafers during Chemical mechanical planarization. The experimentally observed trends of the deformation patterns and the force profiles from micro and nano-single scratch experiments are used to guide numerical simulation using finite element simulation at the continuum scale and molecular dynamics simulation at the atomistic scale. Such integrated approach has provided several plausible mechanisms for material detachments through a combination of surface plowing and shearing under the abrasive particles. The gained insights can be integrated into mechanismbased models for the material removal rate in these processes as well as addressing possible defect formation.

The Preparation of World-Class Single Crystal Silicon Carbide Wafers Using High Rate Chemical Mechanical Planarization Slurries

2008 ◽  
Vol 600-603 ◽  
pp. 839-842 ◽  
Author(s):  
Michael L. White ◽  
Stan Reggie ◽  
Nevin Naguib ◽  
Kenneth Nicholson ◽  
Jeffrey Gilliland ◽  
...  
Keyword(s):  
Activation Energy ◽  
Silicon Carbide ◽  
Kinetic Analysis ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Single Crystal Silicon ◽  
High Rate ◽  
Crystal Silicon ◽  
World Class ◽  
Planarization Process

The influence of the chemical mechanical planarization process on the 4o off-axis 4HN SiC removal rate for silicon carbide slurry produced by Cabot Microelectronics Corporation (CMC) has been studied. A detailed kinetic analysis was applied and the linearity of an Arrhenius-like activation energy plot suggests that the primary removal occurs from particles adhered to the pad surface.

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