Mechanical Behavior of Nanocrystalline Cu Alloy Thin Film on Elastomer Substrates Under Constant Uniaxial Tensile Strain

2006 ◽  
Vol 976 ◽  
Author(s):  
Junya Inoue ◽  
Yousuke Fujii ◽  
Toshihiko Koseki

AbstractIn this study, mechanical behavior of nanocrystalline Cu alloy thin films under constant tensile strain is studied, by taking advantage of the enhanced resistance to strain localization of a thin metal film on a thick elastomer with appropriate Young's modulus. Cu and Cu alloy thin films with a thickness of 100nm were deposited on heat-resistant polyimide substrates. On the top of the Cu alloy layer, Ta thin film was further deposited to suppress the surface diffusion of Cu alloy. A uniform uniaxial tensile strain was induced to the films by applying a constant radius of curvature to the polyimide substrate. Isothermal deformation and rupture modes of the films were studied by keeping the samples at various elevated temperatures. Microstructural observation was carried out using SEM, TEM, STEM, and confocal violet laser microscope at several stages of deformation. From the observation, the evolution of damage in the sub-critical strain level and the effect of alloying elements are discussed.

Materials ◽  
2018 ◽  
Vol 11 (10) ◽  
pp. 1970 ◽  
Author(s):  
Donghyeon Ryu ◽  
Alfred Mongare

In this study, a flexible strain sensor is devised using corrugated bilayer thin films consisting of poly(3-hexylthiophene) (P3HT) and poly(3,4-ethylenedioxythiophene)-polystyrene(sulfonate) (PEDOT:PSS). In previous studies, the P3HT-based photoactive non-corrugated thin film was shown to generate direct current (DC) under broadband light, and the generated DC voltage varied with applied tensile strain. Yet, the mechanical resiliency and strain sensing range of the P3HT-based thin film strain sensor were limited due to brittle non-corrugated thin film constituents. To address this issue, it is aimed to design a mechanically resilient strain sensor using corrugated thin film constituents. Buckling is induced to form corrugation in the thin films by applying pre-strain to the substrate, where the thin films are deposited, and releasing the pre-strain afterwards. It is known that corrugated thin film constituents exhibit different optical and electronic properties from non-corrugated ones. Therefore, to design the flexible strain sensor, it was studied to understand how the applied pre-strain and thickness of the PEDOT:PSS conductive thin film affects the optical and electrical properties. In addition, strain effect was investigated on the optical and electrical properties of the corrugated thin film constituents. Finally, flexible strain sensors are fabricated by following the design guideline, which is suggested from the studies on the corrugated thin film constituents, and the DC voltage strain sensing capability of the flexible strain sensors was validated. As a result, the flexible strain sensor exhibited a tensile strain sensing range up to 5% at a frequency up to 15 Hz with a maximum gauge factor ~7.


1970 ◽  
Vol 37 (3) ◽  
pp. 765-770 ◽  
Author(s):  
A. B. Schultz

The mechanical behavior of metals subjected to uniaxial tensile impact at elevated temperatures is reported. Tests were conducted on annealed 1100 aluminum at 200, 350, 550, and 800 deg F; annealed 2024 aluminum at 200, 450, and 600 deg; and annealed C1010 steel at 430, 700, 1050, and 1400 deg F. The materials exhibit a wide range of dynamic behavior, including some in which the stress required to produce a given level of strain is significantly lowered by dynamic loading. The ratios of the dynamic ultimate stresses to the static are found to range from 0.71–6.0.


Entropy ◽  
2019 ◽  
Vol 21 (2) ◽  
pp. 146 ◽  
Author(s):  
Wei-Bing Liao ◽  
Hongti Zhang ◽  
Zhi-Yuan Liu ◽  
Pei-Feng Li ◽  
Jian-Jun Huang ◽  
...  

Recently, high-entropy alloy thin films (HEATFs) with nanocrystalline structures and high hardness were developed by magnetron sputtering technique and have exciting potential to make small structure devices and precision instruments with sizes ranging from nanometers to micrometers. However, the strength and deformation mechanisms are still unclear. In this work, nanocrystalline Al0.3CoCrFeNi HEATFs with a thickness of ~4 μm were prepared. The microstructures of the thin films were comprehensively characterized, and the mechanical properties were systematically studied. It was found that the thin film was smooth, with a roughness of less than 5 nm. The chemical composition of the high entropy alloy thin film was homogeneous with a main single face-centered cubic (FCC) structure. Furthermore, it was observed that the hardness and the yield strength of the high-entropy alloy thin film was about three times that of the bulk samples, and the plastic deformation was inhomogeneous. Our results could provide an in-depth understanding of the mechanics and deformation mechanism for future design of nanocrystalline HEATFs with desired properties.


2013 ◽  
Vol 80 (2) ◽  
Author(s):  
Yong Wang ◽  
Xue Feng ◽  
Bingwei Lu ◽  
Gangfeng Wang

The buckling of thin films with natural nonlinearity can provide a useful tool in many applications. In the present paper, the mechanical properties of controllable buckling of thin films are investigated by accounting for both geometric nonlinearity and surface effects at nanoscale. The effects of surface elasticity and residual surface tension on both static and dynamic behaviors of buckled thin films are discussed based on the surface-layer-based model. The dynamic design strategy for buckled thin films as interconnects in flexible electronics is proposed to avoid resonance in a given noise environment based on the above analysis. Further discussion shows that the thermal and piezoelectric effects on mechanical behavior of buckled thin film are equivalent to that of residual surface tension.


2005 ◽  
Vol 141 (2) ◽  
pp. 286-292 ◽  
Author(s):  
Lianbang Wang ◽  
Shingo Kitamura ◽  
Keigo Obata ◽  
Shigeo Tanase ◽  
Tetsuo Sakai

2011 ◽  
Vol 17 (6) ◽  
pp. 886-888
Author(s):  
Zsolt Czigány

AbstractA simple plan-view sample preparation technique for transmission electron microscopy (TEM) specimens is proposed for thin films by tearing-off the film with adhesive tape. The demand for very thin samples is highest for nanostructured materials where the structure of 2–5 nm sized features (grains) needs to be resolved; therefore, overlapping of nanometer-sized features should be avoided. The method provides thin areas at the fracture edges of plan-view specimens with thickness in the range of the grain size in the film allowing for artifact free high-resolution TEM imaging. Nanostructured materials typically fracture between the grains providing areas with the thickness of the grain size. Besides the swiftness of the method, the samples are free of surface amorphization artifacts, which can occur in ion beam milling up to 1 nm depth even at low energy ion bombardment. The thin film tear-off technique is demonstrated on a CuMn alloy thin film with grain size of 2 nm.


Author(s):  
C.C. Chama

Substantiation of a technique earlier employed in determining stress in Copper-Silver thin films at very low temperatures is presented. It is shown that the stress measured at elevated temperatures using Stoney’s equation can be utilized in the determination of stress at very low temperatures. To demonstrate the application of this technique, a case study has been conducted by utilizing stress hysteresis curves obtained from the Cu-6at%Ag thin film heated from room temperature to 400°C and cooled back to room temperature in two cycles. The stresses in the Cu-6at%Ag thin film at various low temperatures up to-197°C have been determined by utilizing data from high temperature stress hysteresis curves.


2000 ◽  
Vol 623 ◽  
Author(s):  
Chang-Tai Xia ◽  
V. M. Fuenzalida ◽  
R. A. Zarate

AbstractBa(Ti,Zr)O3 thin films were grown hydrothermally on silicon substrates coated with sputtered a Ti-34 at.%Zr metallic alloy thin film. To ensure the formation of Ba(Ti,Zr)O3 under the hydrothermal conditions at 150°C, the concentration of the Ba(OH)2 had to be greater than 0.25 M. Preliminary capacitance measurement revealed a dielectric constant of 200 in Ba(Ti,Zr)O3 films of approximately 320 nm. The formation mechanism is discussed.


1989 ◽  
Vol 167 ◽  
Author(s):  
Peter Madakson ◽  
Joyce C. Liu

AbstractA detailed study of the interdiffusion and resistivity of Cu/Au, Cu/Co/ Co/Au and Cu/Co/Au thin film structures was carried out at temperatures ranging from 25 to 550°C1. Both Cu and Au, in the Cu/Au structure, intermix readily even at temperatures as low as 150°C and the interdiffusion is accompanied by rapid increase in resistivity. Very little interdiffusion occurs in the Cu/Co, Co/Au or Cu/Co/Au thin film structures up to about 400°C, after which the resistivity increases. The very rapid increase in resistivity observed at 250°C for the Cu/Au system and at 450°C for Cu/Co/Au, is associated with recrystallization of the films into large grains and the formation of AuCu, Cu3Au and Cu3Au2 compounds. The Cu/Co/Au structure recrystallizes at a higher temperature because of the time needed for Cu and Au to diffuse through the Co layer, which did not react significantly with either Au or Cu.


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