Surface Structural Techniques Applied to Interfaces

MRS Bulletin ◽  
1990 ◽  
Vol 15 (9) ◽  
pp. 38-41 ◽  
Author(s):  
I.K. Robinson
Keyword(s):  
Internal Surface ◽  
Amorphous Solid ◽  
Interface Roughness ◽  
Misfit Dislocations ◽  
Ion Scattering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
The Subject ◽  
Medium Energy Ion Scattering

An interface is an internal surface, the boundary between two media which may be crystalline, amorphous solid, or liquid. Its close similarity with a surface, a solid-vacuum boundary, suggests that many of the powerful techniques available for studying surfaces might be applied to the interface structure problem. The extent to which this is possible is the subject of this article.The techniques to be discussed in this article include low energy electron diffraction (LEED), medium energy ion scattering (MEIS), x-ray diffraction, and x-ray reflectivity. (The most widely used method, transmission electron microscopy (TEM), is the subject of a separate article in this issue of the MRS BULLETIN.) To summarize what we will find, surface methods were developed to be nonpenetrating in order to have surface sensitivity. This works against us in the interface situation by requiring the use of extremely thin samples, at least on one side of the interface. This means special handling of samples in some cases and raises the possibility of artifac-tual results. Of the three methods, x-ray diffraction is the most penetrating and least surface sensitive; it probably has the greatest potential for widespread use in interface science.This article defines structure as “atomic structure” for this purpose: we are interested in the coordinates of atoms at the interface and their relation to bulk structures on one or both sides. For this reason, we will consider only interfaces that are crystalline on at least one side. Since crystals are by far our strongest structural reference point, much less can be said about other interfaces. We will also consider the morphology of an interface, defined as the boundary of the crystal(s) that demarcates the interface, also at the atomic level. This is most apparent in the form of interface roughness. The roles of strain and misfit dislocations in interface formation, also studied by these techniques, are outside the scope of this article.

Structural properties of molecular beam epitaxy grown Ni/Pt superlattices

1997 ◽  
Vol 12 (1) ◽  
pp. 161-174 ◽  
Author(s):  
W. Staiger ◽  
A. Michel ◽  
V. Pierron-Bohnes ◽  
N. Hermann ◽  
M. C. Cadeville
Keyword(s):  
Molecular Beam ◽  
Growth Direction ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Superlattice Peak ◽  
Diffraction Peaks ◽  
Diffraction Patterns

We find that the [Ni3.2nmPt1.6nm] × 15 and [Ni3.2nmPt0.8nm] × 15 multilayers are semicoherent and display a columnar morphology. From both the period of the moir’e fringes and the positions of the diffraction peaks in electronic (plan-view and crosssection geometries) and x-ray diffraction patterns, one deduces that the nickel is relaxed (at least in the error bars of all our measurements), whereas the platinum remains slightly strained (≈−1%). The interfaces are sharp; no intermixing takes place giving rise to neat contrasts in transmission electron microscopy (TEM) and to high intensities of the superlattice peaks in the growth direction in both diffraction techniques. The relaxation of the interfacial misfit occurs partially through misfit dislocations, partially through the strain of platinum. A quasiperiodic twinning occurs at the interfaces, the stacking fault which forms the twin being the most often located at the interface Pt/Ni, i.e., when a Pt layer begins to grow on the Ni layer. The simulation of the θ/2θ superlattice peak intensities takes into account the columnar microstructure. It shows that the roughness is predominantly at medium scale with a fluctuation of about 12.5% for Ni layers and negligible for Pt layers.

SOLID STATE AMORPHIZATION IN MECHANICALLY ALLOYED Al–Ti–Si NANOCOMPOSITES

2005 ◽  
Vol 04 (05n06) ◽  
pp. 1025-1028
Author(s):  
I. MANNA ◽  
P. NANDI ◽  
B. BANDYOPADHYAY ◽  
P. M. G. NAMBISSAN ◽  
K. GHOSHRAY ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Solid State ◽  
Amorphous Solid ◽  
Positron Annihilation Spectroscopy ◽  
Intermetallic Phases ◽  
X Ray Diffraction ◽  
Mechanically Alloyed ◽  
X Ray ◽  
Transmission Electron ◽  
State Amorphization

The microstructural evolution at different stages of milling of a ternary powder blend of Al 50 Ti 40 Si 10 composition was monitored by X-ray diffraction, high-resolution transmission electron microscopy, positron annihilation spectroscopy and 27 Al nuclear magnetic resonance. Ball-milling leads to alloying, nanocrystallization and partial solid state amorphization, either followed or accompanied by strain-induced nucleation of nanocrystalline intermetallic phases from an amorphous solid solution.

The Nucleation and Propagation of Misfit Dislocations aear the Critical Thickness in Ge-Si Strained Epilayers

1987 ◽  
Vol 104 ◽  
Author(s):  
E. P. Kvam ◽  
D. J. Eaglesham ◽  
D. M. Maher ◽  
C. J. Humphreys ◽  
J. C. Bean ◽  
...  
Keyword(s):  
Lattice Parameter ◽  
Dislocation Segment ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
Parameter Mismatch ◽  
Growth Interface ◽  
Edge Type ◽  
X Ray ◽  
Transmission Electron ◽  
Dislocation Behavior

ABSTRACTThe nucleation and propagation of misfit dislocations in Ge-Si strained epilayers on (100) Si have been investigated using transmission electron microscopy and X-ray diffraction topography at low lattice parameter mismatch (˜ 0.8%). Misfit dislocations nucleate as half loops which are predominantly unfaulted (> 90%) at the advancing growth interface. Under the driving force of the epilayer strain, unfaulted half loops glide and expand on inclined { 111 }planes toward the heterointerface (i.e. substrate/epilayer interface). These unfaulted half loops consist of a 60°-dislocation segment which lies along < 011> in a plane parallel to the heterointerface (i.e. (100)) and this segment is connected to the growth interface by two screw dislocation segments which both lie on the same inclined {111} glide plane. As 60° dislocations reach the heterointerface on each of the four inclined {111} variants, they form an orthogonal array of misfit dislocations which lie along [011] and [011]. At higher lattice parameter mismatch (˜ 2%), there appear to be some important changes in the dislocation behavior and these changes result in orthogonal arrays of heterointerface dislocations which are predominantly edge type (i.e. 90°dislocations).

Determination of The State of Deformation in Epitaxial Layers Using High Resolution X-Ray Diffraction

1993 ◽  
Vol 319 ◽  
Author(s):  
P.J. Dugdale ◽  
R.C. Pond ◽  
S.J. Barnett
Keyword(s):  
High Resolution ◽  
The State ◽  
Epitaxial Layers ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray ◽  
Additional Information ◽  
Transmission Electron ◽  
Dislocation Densities

AbstractThe state of deformation in epitaxial layers of InGaAs grown by MBE on GaAs substrates has been determined using high resolution X-ray diffraction. This method enables the strains and rigid body rotations which occur in the layers to be measured and these are described by means of a tensor. Layers of different thicknesses have been grown on substrates whose dislocation densities differ by three orders of magnitude in order to assess the influence of this parameter on layer relaxation through the motion of misfit dislocations to the interface. Transmission electron microscopy has also been used to provide additional information on the relaxations.

scholarly journals X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates

2013 ◽  
Vol 46 (4) ◽  
pp. 868-873 ◽  
Author(s):  
Peter Zaumseil ◽  
Grzegorz Kozlowski ◽  
Yuji Yamamoto ◽  
Markus Andreas Schubert ◽  
Thomas Schroeder
Keyword(s):  
Tensile Strain ◽  
Chemical Vapour ◽  
Grazing Incidence ◽  
Silicon On Insulator ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Soi Substrates ◽  
Nanostructured Si

On the way to integrate lattice mismatched semiconductors on Si(001), the Ge/Si heterosystem was used as a case study for the concept of compliant substrate effects that offer the vision to be able to integrate defect-free alternative semiconductor structures on Si. Ge nanoclusters were selectively grown by chemical vapour deposition on Si nano-islands on silicon-on-insulator (SOI) substrates. The strain states of Ge clusters and Si islands were measured by grazing-incidence diffraction using a laboratory-based X-ray diffraction technique. A tensile strain of up to 0.5% was detected in the Si islands after direct Ge deposition. Using a thin (∼10 nm) SiGe buffer layer between Si and Ge the tensile strain increases to 1.8%. Transmission electron microscopy studies confirm the absence of a regular grid of misfit dislocations in such structures. This clear experimental evidence for the compliance of Si nano-islands on SOI substrates opens a new integration concept that is not only limited to Ge but also extendable to semiconductors like III–V and II–VI materials.

Reduction of Structural Defects in Ge Epitaxially Grown on Nano-Structured Si Islands on SOI Substrate

2013 ◽  
Vol 205-206 ◽  
pp. 400-405
Author(s):  
Peter Zaumseil ◽  
Yuji Yamamoto ◽  
Markus Andreas Schubert ◽  
Thomas Schroeder ◽  
Bernd Tillack
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Strain State ◽  
Chemical Vapor ◽  
Structural Defects ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Nanostructured Si

One way to further increase performance and/or functionality of Si micro-and nanoelectronics is the integration of alternative semiconductors on silicon (Si). We studied the Ge/Si heterosystem with the aim to realize a Ge deposition free of misfit dislocations and with low content of other structural defects. Ge nanostructures were selectively grown by chemical vapor deposition on periodic Si nanoislands (dots and lines) on SOI substrate either directly or with a thin (about 10 nm) SiGe buffer layer. The strain state of the structures was measured by different laboratory-based x-ray diffraction techniques. It was found that a suited SiGe buffer improves the compliance of the Si compared to direct Ge deposition; plastic relaxation during growth can be prevented, and fully elastic relaxation of the structure can be achieved. Transmission electron microscopy confirms that the epitaxial growth of Ge on nanostructured Si is free of misfit dislocations.

Thermal Stability of Strained Si on Relaxed Si1−xGex Buffer Layers

2001 ◽  
Vol 686 ◽  
Author(s):  
P.M. Mooney ◽  
S.J. Koester ◽  
J.A. Ott ◽  
J.L. Jordan-Sweet ◽  
J.O. Chu ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Layer Thickness ◽  
Buffer Layers ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
Strained Si ◽  
X Ray ◽  
Dislocation Glide ◽  
Transmission Electron ◽  
Thermal Stability Of

AbstractThe thermal stability of strained Si on relaxed Si1−xGex structures annealed at 1000 °C was investigated using high-resolution x-ray diffraction, Raman spectroscopy and transmission electron microscopy. Interdiffusion at the Si/Si1−xGex interface is negligible for annealing times <30 sec and is independent of the initial Si layer thickness and the composition of the Si1−xGex layer. In all cases the Si layers remained nearly fully strained, but a significant density of misfit dislocations was seen in layers that exceeded the critical thickness for dislocation glide. The Si layer thickness could be measured for layers as thin as 7 nm.

A superlattice approach to the synthesis of ferroelectric Strontium Bismuth Tantalate thin films using liquid-injection-MOCVD

2005 ◽  
Vol 902 ◽  
Author(s):  
Richard Potter ◽  
Ahmed Awad ◽  
Paul R. Chalker ◽  
Peng Wang ◽  
Anthony C. Jones ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Scattering ◽  
X Ray Diffraction ◽  
Strontium Bismuth Tantalate ◽  
X Ray ◽  
Polycrystalline Layer ◽  
Liquid Injection ◽  
High Resolution Tem ◽  
Medium Energy Ion Scattering ◽  
Post Deposition

AbstractThe synthesis of SrBi2Ta2O9 (SBT) thin films has been investigated using a superlattice approach. Thin films were deposited on silicon by independent injection of each source to produce Bi2O3/SrTa2O6 superlattices. The effects of post-deposition annealing have been investigated using high-resolution TEM and medium energy ion scattering (MEIS) to depth profile the superlattices. X-ray diffraction has also been used to characterize the conversion of the superlattices from distinct layers of Bi2O3 and SrTa2O6 into a polycrystalline layer of strontium bismuth tantalate.

Si/Ge Strained-Layer Epitaxy: Sil−xGex Alloy Buffer Layers and Ultra-Short Period SimGen Superlattices.

1990 ◽  
Vol 198 ◽  
Author(s):  
M. Ospelt ◽  
J. Henz ◽  
E. MÜller ◽  
H. Von KÄnel
Keyword(s):  
Period Doubling ◽  
Interface Roughness ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
3 Dimensional ◽  
Annealing Temperatures ◽  
Transmission Electron ◽  
Short Period ◽  
The Individual

ABSTRACTSil−xGex alloy layers and ultra-short period SimGen superlattices on alloy buffer layers of the same concentration have been grown by MBE. The superlattices as a whole have been shown to have the lattice constant of the underlying alloy buffer layer, the individual Si and Ge layers being fully strained. Samples with a graded Ge content have been used to study the relaxation as a function of Ge content by means of X-ray diffraction and RBS and channeling.Transmission electron spectroscopy reveals that interface roughness is not simply statistical in these superlattices. Rather, electron diffraction shows additional features from a period doubling in the (111) directions, indicating that a corresponding interfacial ordering occurs. These features show 2- or 3-dimensional behavior depending on the thickness of the Si and Ge layers in the superlattices. Annealing studies show these features to persist even for annealing temperatures where the superlattices disintegrate into alloys.

Structural Characterization of Epitaxial Si / Pr2O3 / Si(111) Heterostructures

2005 ◽  
Vol 108-109 ◽  
pp. 741-748 ◽  
Author(s):  
P. Zaumseil ◽  
T. Schroeder ◽  
G. Weidner
Keyword(s):  
Structural Characterization ◽  
Hexagonal Phase ◽  
Grazing Incidence ◽  
Interface Roughness ◽  
X Ray Diffraction ◽  
X Ray ◽  
Crystal Perfection ◽  
Transmission Electron ◽  
Control Layer

The use of heteroepitaxial Si / Pr2O3 / Si(111) systems as semiconductor-insulatorsemiconductor (SIS) stacks in future applications requires a detailed structural characterization. We used X-ray reflectivity (XRR) to control layer thickness and interface roughness, standard X-ray diffraction (XRD) to analyze the Pr2O3 phase, orientation and crystal perfection, and grazing incidence XRD to study the thin epitaxial Si top layer. Transmission electron microscopy (TEM) was used to prove the results by direct imaging on a microscopic scale. Pr2O3 grows epitaxially in its hexagonal phase and (0001) orientation on Si(111) substrates. An epitaxial Si overgrowth in (111) orientation and good perfection is possible, but such Si layers exhibit two stacking twins, one with the same in-plane orientation as the substrate and one rotated by 180° around the Si [111] direction.

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