Si/Ge Strained-Layer Epitaxy: Sil−xGex Alloy Buffer Layers and Ultra-Short Period SimGen Superlattices.

1990 ◽  
Vol 198 ◽  
Author(s):  
M. Ospelt ◽  
J. Henz ◽  
E. MÜller ◽  
H. Von KÄnel
Keyword(s):  
Period Doubling ◽  
Interface Roughness ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
3 Dimensional ◽  
Annealing Temperatures ◽  
Transmission Electron ◽  
Short Period ◽  
The Individual

ABSTRACTSil−xGex alloy layers and ultra-short period SimGen superlattices on alloy buffer layers of the same concentration have been grown by MBE. The superlattices as a whole have been shown to have the lattice constant of the underlying alloy buffer layer, the individual Si and Ge layers being fully strained. Samples with a graded Ge content have been used to study the relaxation as a function of Ge content by means of X-ray diffraction and RBS and channeling.Transmission electron spectroscopy reveals that interface roughness is not simply statistical in these superlattices. Rather, electron diffraction shows additional features from a period doubling in the (111) directions, indicating that a corresponding interfacial ordering occurs. These features show 2- or 3-dimensional behavior depending on the thickness of the Si and Ge layers in the superlattices. Annealing studies show these features to persist even for annealing temperatures where the superlattices disintegrate into alloys.

Structural Characterization of Short-Period SimGEn Superlattices by Transmission Electron Microscopy and X-Ray Diffraction

1991 ◽  
Vol 220 ◽  
Author(s):  
W. Jäger ◽  
K. Leifer ◽  
P. Ehrhart ◽  
E. Kasper ◽  
H. Kibbel
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Interface Roughness ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Average Composition ◽  
X Ray ◽  
Transmission Electron ◽  
Short Period

ABSTRACTHigh resolution and analytical transmission electron microscopy (TEM) and X-ray diffraction (XRD) were used to characterize short-period strained-layer Sim-Gen superlattices ( m monolayers Si, n monolayers Ge, total number of periods N≤ 145, total thickness ≃ 200 nm). The superlattices were grown by low-temperature molecular beam epitaxy (T = 300–400°C) on different SiGe alloy buffer layers on Si (100)substrates. The combination of these two methods shows that detailed informations can be obtained about superlattice periodicity, interface roughness, strain, and average composition.

Microstructures of two-phase Ti–Cr alloys containing the TiCr2 Laves phase intermetallic

1997 ◽  
Vol 12 (6) ◽  
pp. 1472-1480 ◽  
Author(s):  
Katherine C. Chen ◽  
Samuel M. Allen ◽  
James D. Livingston
Keyword(s):  
Laves Phase ◽  
X Ray Diffraction ◽  
Orientation Relationships ◽  
Phase Growth ◽  
Two Phase ◽  
X Ray ◽  
Lattice Constants ◽  
Annealing Temperatures ◽  
Transmission Electron ◽  
Phase Intermetallic

Microstructures of two-phase Ti–Cr alloys (Ti-rich bcc + TiCr2 and Cr-rich bcc + TiCr2) are analyzed. A variety of TiCr2 precipitate morphologies is encountered with different nominal alloy compositions and annealing temperatures. Lattice constants and crystal structures are determined by x-ray diffraction (XRD) and transmission electron microscopy (TEM). Orientation relationships between the beta bcc solid solution and C15 TiCr2 Laves phase are understood in terms of geometrical packing, and are consistent with a Laves phase growth mechanism involving twinning.

InAs Quantum Dots Grown on an AlGaAsSb Strain-Relief Buffer

2000 ◽  
Vol 642 ◽  
Author(s):  
A.L. Gray ◽  
L. R. Dawson ◽  
Y. Lin ◽  
A. Stintz ◽  
Y.-C. Xin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Cross Section ◽  
Gaas Substrate ◽  
Buffer Layers ◽  
Threading Dislocations ◽  
X Ray Diffraction ◽  
Strain Relief ◽  
Inas Quantum Dots ◽  
X Ray ◽  
Transmission Electron

ABSTRACTAn In(Ga)As-based self-assembled quantum dot laser test structure grown on strain-relief Al0.5Ga0.5As1-ySby strain-relief buffer layers (0≤y ≤ 0.24) on a GaAs substrate is investigated in an effort to increase dot size and therefore extend the emission wavelength over conventional InAs quantum dots on GaAs platforms. Cross-section transmission electron microscopy, and high-resolution x-ray diffraction are used to monitor the dislocation filtering process and morphology in the buffer layers. Results show that the buffer layers act as an efficient dislocation filter by drastically reducing threading dislocations, thus providing a relaxed, low dislocation, compositionally modulated Al0.5Ga0.5Sb0.24As0.76 substrate for large (500Å height x 300Å width) defect -free InAs quantum dots. Photoluminescence shows a ground-state emission of the InAs quantum dots at 1.45 μm.

Spontaneous Lateral Modulations in InAlAs Buffer Layers Grown by MBE on InP Substrates

1995 ◽  
Vol 417 ◽  
Author(s):  
F. Peiró ◽  
A. Cornet ◽  
J. C. Ferrer ◽  
J. R. Morante ◽  
G. Halkias ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Single Quantum ◽  
X Ray Diffraction ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
X Ray ◽  
Transmission Electron ◽  
Inp Substrates

AbstractTransmission Electron Microscopy (TEM) and X-ray Diffraction (XRD) have been used to analyze the spontaneous appearance of lateral composition modulations in InyAl1−yAs (yIn.≅ 50%) buffer layers of single quantum well structures grown by molecular beam epitaxy on exact and vicinal (100) InP substrates, at growth temperatures in the range of 530°C–580°C. The influence of the growth temperature, substrate misorientation and epilayer mismatch on the InAlAs lateral modulation is discussed. The development of a self-induced quantum-wire like morphology in the In0.53Ga0.47As single quantum wells grown over the modulated buffers is also commented on.

Hardness evolution of Al–Cr–N coatings under thermal load

2008 ◽  
Vol 23 (11) ◽  
pp. 2880-2885 ◽  
Author(s):  
Herbert Willmann ◽  
Paul H. Mayrhofer ◽  
Lars Hultman ◽  
Christian Mitterer
Keyword(s):  
Thermal Load ◽  
Structural Changes ◽  
Single Phase ◽  
Volume Fraction ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Al Content ◽  
Annealing Temperatures ◽  
Transmission Electron

Microstructure and hardness evolution of arc-evaporated single-phase cubic Al0.56Cr0.44N and Al0.68Cr0.32N coatings have been investigated after thermal treatment in Ar atmosphere. Based on a combination of differential scanning calorimetry and x-ray diffraction studies, we can conclude that Al0.56Cr0.44N undergoes only small structural changes without any decomposition for annealing temperatures Ta ⩽ 900 °C. Consequently, the hardness decreases only marginally from the as-deposited value of 30.0 ± 1.1 GPa to 29.4 ± 0.9 GPa with Ta increasing to 900 °C, respectively. The film with higher Al content (Al0.68Cr0.32N) exhibits formation of hexagonal (h) AlN at Ta ⩾ 700 °C, which occurs preferably at grain boundaries as identified by analytical transmission electron microscopy. Hence, the hardness increases from the as-deposited value of 30.1 ± 1.3 GPa to 31.6 ± 1.4 GPa with Ta = 725 °C. At higher temperatures, where the size and volume fraction of the h-AlN phase increases, the hardness decreases to 27.5 ± 1.0 GPa with Ta = 900 °C.

THE INVESTIGATION ON STABILITY AND STRUCTURAL PROPERTIES OF COHESION-BASED NANOSTRUCTURES MATERIAL

2013 ◽  
Vol 27 (27) ◽  
pp. 1350153 ◽  
Author(s):  
ALI BAHARI ◽  
REZA GHOLIPUR ◽  
MARYAM DERAKHSHI
Keyword(s):  
Annealing Temperature ◽  
Sol Gel ◽  
Growth Mode ◽  
X Ray Diffraction ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
X Ray ◽  
Annealing Temperatures ◽  
Atomic Force ◽  
Transmission Electron

Styrene-doped ZrLaO y nanostructures were obtained by sol–gel method low-temperature synthesis. The nanostructures were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM) and transmission electron microscopy (TEM) techniques. The observation using SEM and TEM revealed that the ring-shaped nanostructures were very uniform. Further characterization using XRD disclosed that the cohesion of the samples was controllable with annealing temperatures in the range of 800–1500°C. Cohesion property was investigated for the samples. The cohesion increased when increasing the annealing temperature. This was linked to the reinforcement of the oxygen bound on the ZrLaO y nanostructures The shape of nanostructures showed a transformation from a ring-shaped growth mode to a hole-surfaced growth mode with increasing annealing temperature. The styrene-doped ZrLaO y nanostructures with controllable crystallinity will have great potential for various applications in fuel, cells, batteries, electronics devices and chemical sensors.

Double Periodicity Formation in EuTe/PbTe Superlattices

1995 ◽  
Vol 399 ◽  
Author(s):  
M. Shima ◽  
L. Salamanca-Riba ◽  
G. Springholz ◽  
G. Bauer
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Short Period ◽  
Short Period Superlattices

ABSTRACTMolecular beam epitaxy was used to grow EuTe(x)/PbTe(y) short period superlattices with x=1-4 EuTe(111) monolayers alternating with y≈3x PbTe monolayers. The superlattices were characterized by transmission electron microscopy and high resolution x-ray diffraction. Regions with double periodicity were observed coexisting with areas of nominal periodicity. The sample with x=3.5 and y=9, for example, contains regions with double periodicity of x=7 and y=17. X-ray diffraction measurements confirm the formation of the double periodicity in these samples by the appearance of weak satellites in between the satellites of the nominal periodicity. The double periodicity in the superlattice is believed to result from interdiffusion during the growth. A model for this process is presented.

Investigation of Ti3SiC2 MAX Phase Formation onto N-Type 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 845-848 ◽  
Author(s):  
Alexia Drevin-Bazin ◽  
Jean François Barbot ◽  
Thierry Cabioc’h ◽  
Marie France Beaufort
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
High Vacuum ◽  
Max Phase ◽  
Vacuum System ◽  
X Ray Diffraction ◽  
X Ray ◽  
Annealing Temperatures ◽  
Transmission Electron

In this study, investigations on MAX phase Ti3SiC2 formation to n-type 4H-SiC substrates and its ohmic-behaved are reported. Ti-Al layers were deposited onto SiC substrates at room temperature by magnetron sputtering in high vacuum system. Thermal annealing at 1000°C in Ar atmosphere were performed to allow interdiffusion processes. X-ray diffraction and High Resolution Transmission Electron Microscopy reveal that a Ti3SiC2 contact, in perfect epitaxy with 4H-SiC substrate, is so-obtained. In situ annealing experiment underlines the evolution of Ti-Al contact microstructure versus temperature. The evolution of contact system from Schottky to Ohmic behaved is observed by I-V measurements for annealing temperatures larger than 700°C.

Interdiffusion Kinetics and Magnetic Properties of TA-Permalloy Multilayers

1991 ◽  
Vol 232 ◽  
Author(s):  
I. Hashim ◽  
H. A. Atwater ◽  
K. T. Y. Kung ◽  
R. M. Valletta
Keyword(s):  
Magnetic Properties ◽  
Isothermal Annealing ◽  
Lattice Diffusion ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Short Period ◽  
Interface Roughening ◽  
Interdiffusion Kinetics ◽  
Kinetics Of

ABSTRACTThe interdiffusion kinetics of ultrahigh vacuum deposited Ta/Ni81Fe19 short-period multilayers films have been investigated, and changes in microstructure were related to magnetic properties. Small angle X-ray diffraction and transmission electron microscopy were used to study layer morphology evolution and interdiffusion during post-growth isothermal annealing in the temperature range 300 – 600°C. The kinetic analysis suggests that interface roughening due to grain growth, and grain-boundary mediated diffusion of Ta occurs concurrently at early anneal times in the Ni81Fe19 films. Subsequent grainboundary and lattice diffusion of Ta lead to a reduction of magnetization and increase in coercivity of Ni81Fe19.

Surface Structural Techniques Applied to Interfaces

MRS Bulletin ◽  
1990 ◽  
Vol 15 (9) ◽  
pp. 38-41 ◽  
Author(s):  
I.K. Robinson
Keyword(s):  
Internal Surface ◽  
Amorphous Solid ◽  
Interface Roughness ◽  
Misfit Dislocations ◽  
Ion Scattering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
The Subject ◽  
Medium Energy Ion Scattering

An interface is an internal surface, the boundary between two media which may be crystalline, amorphous solid, or liquid. Its close similarity with a surface, a solid-vacuum boundary, suggests that many of the powerful techniques available for studying surfaces might be applied to the interface structure problem. The extent to which this is possible is the subject of this article.The techniques to be discussed in this article include low energy electron diffraction (LEED), medium energy ion scattering (MEIS), x-ray diffraction, and x-ray reflectivity. (The most widely used method, transmission electron microscopy (TEM), is the subject of a separate article in this issue of the MRS BULLETIN.) To summarize what we will find, surface methods were developed to be nonpenetrating in order to have surface sensitivity. This works against us in the interface situation by requiring the use of extremely thin samples, at least on one side of the interface. This means special handling of samples in some cases and raises the possibility of artifac-tual results. Of the three methods, x-ray diffraction is the most penetrating and least surface sensitive; it probably has the greatest potential for widespread use in interface science.This article defines structure as “atomic structure” for this purpose: we are interested in the coordinates of atoms at the interface and their relation to bulk structures on one or both sides. For this reason, we will consider only interfaces that are crystalline on at least one side. Since crystals are by far our strongest structural reference point, much less can be said about other interfaces. We will also consider the morphology of an interface, defined as the boundary of the crystal(s) that demarcates the interface, also at the atomic level. This is most apparent in the form of interface roughness. The roles of strain and misfit dislocations in interface formation, also studied by these techniques, are outside the scope of this article.

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