scholarly journals Characterization of ZnO:Al deposited by co-sputtering for transparent conductive electrodes

2015 ◽  
Vol 25 (4) ◽  
pp. 341
Author(s):  
Nguyen Tran Thuat ◽  
Bui Bao Thoa ◽  
Than Thi Cuc ◽  
Nguyen Minh Hieu ◽  
Hoang Ngoc Lam Huong ◽  
...  

Aluminum doped zinc oxide was prepared by magnetron sputtering methods at room temperature using a ZnO ceramic target doped 2%wt by Al2O3. The optical transmittance of the films is higher than 80% in the visible range. A direct bandgap type was reached by controlling deposition conditions; the bandgap value was in the range between 3.2 eV and 4.2 eV. Good electrical and optical properties were obtained for the films deposited by an appropriate co-sputtering of ZnO and Al targets. These films with a resistivity, about 1.3´10-2W.cm, and a transmittance, higher than 80%, can be applicable for transparent conducting electrodes.

2020 ◽  
Vol 10 (12) ◽  
pp. 4127
Author(s):  
Jong Wook Roh ◽  
Weon Ho Shin ◽  
Hyun-Sik Kim ◽  
Se Yun Kim ◽  
Sang-il Kim

The enhancement of electrical and optical properties in transparent conducting electrodes has attracted significant interest for their application in flexible electronic devices. Herein, a method for the fabrication of transparent conducting films is proposed. In this approach, RuO2 nanosheets are synthesized by a simple chemical exfoliation method and deposited as conducting films by repeated Langmuir–Blodgett coating. For enhancing the electrical and optical properties of the films, ultraviolet-ozone irradiation is applied between the repeated coatings for the removal of residual organic materials from the chemically exfoliated nanosheets. We observe that by applying ultraviolet-ozone irradiation for 30 min, the sheet resistance of the films decreases by 10% and the optical transmittance is simultaneously enhanced. Facile ultraviolet-ozone irradiation is shown to be an effective and industrially friendly method for enhancing the electrical and optical properties of oxide nanosheets for their application as transparent conduction electrodes.


2021 ◽  
Vol 21 (4) ◽  
pp. 2185-2195
Author(s):  
Jeferson Matos Hrenechen ◽  
Celso de Araujo Duarte ◽  
Ney Pereira Mattoso Filho ◽  
Evaldo Ribeiro

The present work describes the preparation and the investigation of the room temperature electrical and optical properties of a series of liquid nanocomposites (lnC) prepared with different concentrations of multiwalled carbon nanotubes (MWCNT) in a variety of liquid matrices: glycerin, Vaseline, glucose, propylene glycol and silicone oil (SIO). Special attention is deserved to the SIO matrix, owing to its convenient electrical properties for our purposes. We verified that a small percent fraction of MWCNT dispersed along the SIO matrix is capable of improving the electrical conductivity of the matrix by orders of magnitude, indicating that the MWCNT strongly participates in the electrical conduction mechanism. Also, the application of an external electric field to this lnC resulted in large changes in the optical transmittance, that were interpreted as a consequence of the fieldinduced MWCNT alignment into the liquid matrix. The characteristics of such a new category of nanocomposite in the liquid state suggest further studies.


2018 ◽  
Vol 25 (08) ◽  
pp. 1950033
Author(s):  
SAAD AMARA ◽  
MOHAMED BOUAFIA

In this work we investigate the effect of metal layer in the Al-doped ZnO (AZO)/Al/AZO structure. AZO and Al thin films are deposed successively at room temperature using DC magnetron sputtering by rotating the substrate holder without breaking the vacuum. The optical characterization of AZO/Al/AZO structure was performed by the spectroscopic ellipsometry under different incidence angles (55[Formula: see text], 65[Formula: see text] and 75[Formula: see text]). For the AZO monolayer structure, it was found that the complex refractive index and the complex permittivity coefficient varied differently according to the incidence angle. The addition of Al layer (5[Formula: see text]nm thicknesses) in this monostructure reduces significantly this influence on the measurement, homogenizes the real refractive index variation and significantly reduces the real electrical coefficient permittivity in the visible range. In addition, the obtained depolarization values confirm the results of the AFM roughness revealing that the Al layer addition makes the surface smoother so that it meets the required conditions as the bottom electrode of organic light emitting diodes. The photoluminescence (PL) measurements indicate that the Al layer alters the PL emission. Actually, the Al layer enhances subsequently the PL emission and promotes the blue and red emission.


Author(s):  
А.Ш. Асваров ◽  
А.К. Ахмедов ◽  
А.Э. Муслимов ◽  
В.М. Каневский

Since to the stability of the functional properties of a transparent conducting three-layer structure ZnO:Ga/Ag/ZnO:Ga is important for practical application, we studied its long-term durability and thermal stability in air environment. It has been demonstrated that after prolonged interaction with the air environment at room temperature (~ 1000 h) and further heat treatment in air at temperatures up to 450 ° C (up to 10 h), the three-layer structure retains its integrity and is characterized by a low sheet resistance Rs = 2.8 Ω/sq at average transmittance in the visible range Tav of 82.1%.


2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Sin-Liang Ou ◽  
Feng-Min Lai ◽  
Lun-Wei Yuan ◽  
Da-Long Cheng ◽  
Kuo-Sheng Kao

The off-axis sputtering technique was used to deposit Al-doped ZnO (AZO) films on glass substrates at room temperature. For the illustration of the sample position in the sputtering chamber, the value ofR/ris introduced. Here,ris the radius of AZO target and R is the distance between the sample and the center of substrate holder. A systematic study for the effect of deposition parameters on structural, optical, and electrical properties of AZO films has been investigated in detail. As the sample position ofR/ris fixed at 1.8, it is found that the as-deposited AZO film has relatively low resistivity of 2.67 × 10−3 Ω-cm and high transmittance above 80% in the visible region. Additionally, after rapid thermal annealing (RTA) at 600°C with N2atmosphere, the resistivity of this AZO film can be further reduced to 1.19 × 10−3 Ω-cm. This indicates the AZO films prepared by off-axis magnetron sputtering and treated via the appropriate RTA process have great potential in optoelectronic applications.


2017 ◽  
Vol 62 (2) ◽  
pp. 1275-1279
Author(s):  
B.-R. Koo ◽  
J.-W. Bae ◽  
H.-J. Ahn

AbstractWe fabricated double-laminated antimony tin oxide/Ag nanowire electrodes by spin-coating and electrospraying. Compared to pure Ag nanowire electrodes and single-laminated antimony tin oxide/Ag nanowire electrodes, the double-laminated antimony tin oxide/Ag nanowire electrodes had superior transparent conducting electrode performances with sheet resistance ~19.8 Ω/□ and optical transmittance ~81.9%; this was due to uniform distribution of the connected Ag nanowires because of double lamination of the metallic Ag nanowires without Ag aggregation despite subsequent microwave heating at 250°C. They also exhibited excellent and superior long-term chemical and thermal stabilities and adhesion to substrate because double-laminated antimony tin oxide thin films act as the protective layers between Ag nanowires, blocking Ag atoms penetration.


2009 ◽  
Vol 79-82 ◽  
pp. 1535-1538
Author(s):  
Ling Yi Kong ◽  
Fan Yang ◽  
Jin Ma ◽  
Cai Na Luan ◽  
Zhen Zhu

Ga2xIn2(1-x)O3 thin films with different gallium content x [x = Ga/(Ga+In) atomic ratio] have been prepared on -Al2O3 (0001) substrates at 650°C by metalorganic chemical vapor deposition (MOCVD). Structural, electrical and optical properties of these films have been investigated in detail. The XRD analysis revealed that, as the gallium content increased, the crystalline quality of the films decreased. The highest Hall mobility of the films was 41.32 cm2v−1s−1. The absolute average transmittance of the Ga2xIn2(1-x)O3 thin films in the visible range exceeded 91%. The band gap could be tuned from 3.59 to 4.87 eV as gallium content increased.


2012 ◽  
Vol 189 ◽  
pp. 110-114
Author(s):  
Jian Guo Chai ◽  
Bo Zhang

Indium tin oxide (ITO) and indium tin zirconium oxide (ITZO) films were deposited on glass substrates at room temperature by magnetron sputtering technology with one or two targets. Electrical and optical properties of ITO and ITZO films by air-annealing treatment were contrastively studied. ITZO films provided with the preferential crystalline orientation change from (222) to (400) plane, as well as the increase in grain size and the decrease in surface roughness. As result, zirconium -doping remarkably improved the optical-electrical properties of the films deposited at room temperature. The resistivity of ITO and ITZO films showed the trend which includes first dropping and then rising, which was closely related with the variations of carrier concentration and mobility. ITZO films had high optical transmittance of above 80% at lower annealing temperature. ITZO films prepared by co-sputtering reveal better optical-electrical properties.


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