Characterization of ZnO:Al deposited by co-sputtering for transparent conductive electrodes
Keyword(s):
Aluminum doped zinc oxide was prepared by magnetron sputtering methods at room temperature using a ZnO ceramic target doped 2%wt by Al2O3. The optical transmittance of the films is higher than 80% in the visible range. A direct bandgap type was reached by controlling deposition conditions; the bandgap value was in the range between 3.2 eV and 4.2 eV. Good electrical and optical properties were obtained for the films deposited by an appropriate co-sputtering of ZnO and Al targets. These films with a resistivity, about 1.3´10-2W.cm, and a transmittance, higher than 80%, can be applicable for transparent conducting electrodes.
2021 ◽
Vol 21
(4)
◽
pp. 2185-2195
2011 ◽
Vol 158
(8)
◽
pp. D495
◽
2009 ◽
Vol 79-82
◽
pp. 1535-1538
Keyword(s):
2012 ◽
Vol 189
◽
pp. 110-114
2010 ◽
Vol 94
(3)
◽
pp. 725-728
◽