Investigation of the Dependence of Ambipolarity on Channel Thickness for TMDC Based Field Effect Transistors

We fabricated 4H-SiC nanoribbon field effect transistors (FETs) of various channel thickness (tch) of 100∼500 nm by a “top–down” approach, using a lithography and plasma etching process. We studied the dependence of the device transfer characteristics on the channel geometry. This demonstrated that fabricated SiC nanoribbon FETs with a tch of 100 nm show normally-on characteristics, and have a threshold voltage of −12 V, and a maximum transconductance value of 8.8 mS, which shows improved drain current degradation of the SiC nanoribbon FETs with tch =100 nm at elevated temperature. This can be attributed to the improved heat dissipation, enhanced channel mobility, and together with widening of effective channel thickness depletion induced.

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Electronic Transport in Organic Ferroelectric Gate Field-Effect Transistors with ZnO Channel

MRS Proceedings ◽

10.1557/opl.2012.900 ◽

2012 ◽

Vol 1430 ◽

Cited By ~ 1

Author(s):

Hiroaki Yamada ◽

Takeshi Yoshimura ◽

Norifumi Fujimura

Keyword(s):

Hall Effect ◽

Transport Properties ◽

Carrier Concentration ◽

Electronic Transport ◽

Hall Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Hall Effect Measurement ◽

Field Effect Mobility ◽

Channel Thickness

ABSTRACTThe electronic transport properties of the organic ferroelectric gate field-effect transistors (FeFETs) with the ZnO channel were investigated. The FeFETs with the channel thickness below 100 nm show nonvolatile operation and the on/off ratio of 105. The field-effect mobility decreased with decreasing the channel thickness. From the Hall-effect measurement, it was found that the Hall mobility increases and the carrier concentration decreases after the deposition of the organic ferroelectric gate. From these results, the effect of the ferroelectric polarization on the electronic transport in the FeFETs was discussed.

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Impact of channel thickness fluctuation on performance of bilayer tunneling field effect transistors

10.7567/ssdm.2018.c-4-04 ◽

2018 ◽

Author(s):

K. Kato ◽

H. Matsui ◽

H. Tabata ◽

M. Takenaka ◽

S. Takagi

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors ◽

Channel Thickness

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Role of Layer Thickness and Field-Effect Mobility on Photoresponsivity of Indium Selenide (InSe) Based Phototransistors

Oxford Open Materials Science ◽

10.1093/oxfmat/itab010 ◽

2021 ◽

Author(s):

Milinda Wasala ◽

Prasanna Patil ◽

Sujoy Ghosh ◽

Lincoln Weber ◽

Sidong Lei ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Laser Source ◽

Field Effect Mobility ◽

Structure Property ◽

Active Layers ◽

Wide Range ◽

Conductive Channel ◽

Channel Thickness

Abstract Understanding and optimizing the properties of photoactive two-dimensional (2D) Van der Waals solids is crucial for developing optoelectronics applications. The main goal of this work is to present a detailed investigation of layer dependent photoconductive behavior of InSe based field-effect transistors (FETs). InSe based FETs with five different channel thicknesses (t, 20nm < t < 100nm) were investigated with a continuous laser source of λ = 658 nm (1.88 eV) over a wide range of illumination power (P) of 22.8 nW < P < 1.29 μW. All the devices studied showed signatures of photogating; however, our investigations suggest that the photoresponsivities are strongly dependent on the thickness of the conductive channel. A correlation between the field-effect mobility (µFE) values (as a function of channel thickness, t) and photoresponsivity (R) indicates that in general R increases with increasing µFE (decreasing t) and vice versa. Maximum responsivities of ∼ 7.84 A/W and ∼ 0.59 A/W were obtained the devices with t = 20nm and t = 100nm, respectively. These values could substantially increase under the application of a gate voltage. The structure-property correlation-based studies presented here indicate the possibility of tuning the optical properties of InSe based photo-FETs for a variety of applications related to photodetector and/or active layers in solar cells.

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Control of polarity in multilayer MoTe2 field-effect transistors by channel thickness

Low-Dimensional Materials and Devices 2018 ◽

10.1117/12.2503888 ◽

2018 ◽

Cited By ~ 1

Author(s):

Asha Rani ◽

Kyle DiCamillo ◽

Sergiy Krylyuk ◽

Albert V. Davydov ◽

Ratan Debnath ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Channel Thickness

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Channel Thickness Dependence of InGaAs Quantum-Well Field-Effect Transistors With High- $\kappa$ Gate Dielectrics

IEEE Electron Device Letters ◽

10.1109/led.2012.2205214 ◽

2012 ◽

Vol 33 (9) ◽

pp. 1255-1257 ◽

Cited By ~ 8

Author(s):

Fei Xue ◽

Aiting Jiang ◽

Han Zhao ◽

Yen-Ting Chen ◽

Yanzhen Wang ◽

...

Keyword(s):

Quantum Well ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Thickness Dependence ◽

Well Field ◽

Channel Thickness ◽

Ingaas Quantum Well

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Impact of the channel thickness on the performance of Schottky barrier metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1513657 ◽

2002 ◽

Vol 81 (16) ◽

pp. 3082-3084 ◽

Cited By ~ 92

Author(s):

J. Knoch ◽

J. Appenzeller

Keyword(s):

Metal Oxide ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Thickness ◽

Barrier Metal

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Sub-threshold-like charge transport in organic field effect transistor: A study on effective channel thickness

Modern Physics Letters B ◽

10.1142/s0217984915501729 ◽

2015 ◽

Vol 29 (28) ◽

pp. 1550172

Author(s):

A. K. Kavala ◽

A. K. Mukherjee

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Thermionic Emission ◽

Drain Current ◽

Channel Length ◽

Hole Injection ◽

Emission Model ◽

Short Channel ◽

Channel Thickness ◽

Effective Channel

A short channel organic field effect transistors (OFET) based on Pentacene, having channel length in the range of sub-micrometer, has been numerically modelled for low values of drain voltage. The output characteristics show a nonlinear concave increase of drain current for all values of gate voltages. This anomalous current-voltage behavior, which resembles sub-threshold characteristics of silicon FETs, shows a good match with earlier experimental reports on OFET at low drain voltages. The sub-threshold-like characteristics has been interpreted in light of thermionic-emission model because of the presence of hole injection barrier at drain (gold)/Pentacene interface. The associated analysis has facilitated to obtain a significant parameter, effective channel thickness [Formula: see text], for the first time in case of OFETs. It came out to be roughly 4 nm and 8 nm for experimental devices of poly(3-hexylthiophene-2,5-diyl) and Pentacene, respectively, while the numerically modelled device yielded a value of about 60 nm. Increase of [Formula: see text] with transverse gate electric field is also observed. Physical explanation of the observations is also presented.

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