scholarly journals Scaling of Measure Fluctuations on a Flapping Flag Device in the Open Channel Around a Cylinder At $Re=10^4$ : Taylor's Law Approach

2021 ◽  
Author(s):  
Samuele De Bartolo ◽  
Massimo De Vittorio ◽  
Antonio Francone ◽  
Francesco Guido ◽  
Elisa LEONE ◽  
...  
Keyword(s):  
Thin Films ◽  
Flow Field ◽  
Open Channel ◽  
Scaling Law ◽  
Time History ◽  
Cylindrical Shape ◽  
Order Analysis ◽  
Taylor’S Law ◽  
Fluctuation Scaling ◽  
First Time

Experimental evidence showed how various complex systems, characterized by a fluctuation scaling, satisfy the well-known Taylor's law. The present work aims to apply for the first time Taylor's law, given its general treatment, for a flow field at $Re$ around $10^4$, since activity of each fluid particle is highly fluctuating, especially in the context of vortex shedding. In addition, the further element of innovation is the use of an innovative thin-films based device consisting of an elastic piezoelectric flapping flag that is proposed as a measuring instrument of the flow field. The oscillations of the flapping flag, due to the vortexes release downstream to an obstacle of cylindrical shape, generate an alternating piezoelectric voltage whose time history is similar to the chaotic components of the fully developed turbulent speed. Preliminary experimental results about the use of thin-films based device in a flume channel are reported together with a second order analysis on the voltage difference and a scaling law of the exponent scale.

scholarly journals Direct Scaling of Measure on Vortex Shedding through a Flapping Flag Device in the Open Channel around a Cylinder at Re∼103: Taylor’s Law Approach

Sensors ◽  
2021 ◽  
Vol 21 (5) ◽  
pp. 1871
Author(s):  
Samuele De Bartolo ◽  
Massimo De Vittorio ◽  
Antonio Francone ◽  
Francesco Guido ◽  
Elisa Leone ◽  
...  
Keyword(s):  
Thin Films ◽  
Reynolds Number ◽  
Flow Field ◽  
Vortex Shedding ◽  
Open Channel ◽  
Constitutive Law ◽  
Direct Scaling ◽  
Taylor’S Law ◽  
Regular Flow ◽  
Over Time

The problem of vortex shedding, which occurs when an obstacle is placed in a regular flow, is governed by Reynolds and Strouhal numbers, known by dimensional analysis. The present work aims to propose a thin films-based device, consisting of an elastic piezoelectric flapping flag clamped at one end, in order to determine the frequency of vortex shedding downstream an obstacle for a flow field at Reynolds number Re∼103 in the open channel. For these values, Strouhal number obtained in such way is in accordance with the results known in literature. Moreover, the development of the voltage over time, generated by the flapping flag under the load due to flow field, shows a highly fluctuating behavior and satisfies Taylor’s law, observed in several complex systems. This provided useful information about the flow field through the constitutive law of the device.

scholarly journals Taylor’s Law of Temporal Fluctuation Scaling in Stock Illiquidity

2016 ◽  
Vol 15 (04) ◽  
pp. 1650029 ◽  
Author(s):  
Qing Cai ◽  
Hai-Chuan Xu ◽  
Wei-Xing Zhou
Keyword(s):  
Stock Exchange ◽  
Scaling Law ◽  
Convincing Evidence ◽  
Scaling Exponent ◽  
Temporal Fluctuation ◽  
Industrial Sectors ◽  
Taylor’S Law ◽  
Fluctuation Scaling ◽  
Almost All ◽  
A Share

Taylor’s law of temporal fluctuation scaling, variance [Formula: see text], is ubiquitous in natural and social sciences. We report for the first time convincing evidence of a solid temporal fluctuation scaling law in stock illiquidity by investigating the mean-variance relationship of the high-frequency illiquidity of almost all stocks traded on the Shanghai Stock Exchange (SHSE) and the Shenzhen Stock Exchange (SZSE) during the period from 1999 to 2011. Taylor’s law holds for A-share markets (SZSE Main Board, SZSE Small & Mediate Enterprise Board, SZSE Second Board, and SHSE Main Board) and B-share markets (SZSE B-share and SHSE B-share). We find that the scaling exponent [Formula: see text] is greater than 2 for the A-share markets and less than 2 for the B-share markets. We further unveil that Taylor’s law holds for stocks in 17 industry categories, in 28 industrial sectors and in 31 provinces and direct-controlled municipalities with the majority of scaling exponents [Formula: see text]. We also investigate the [Formula: see text]-min illiquidity and find that the scaling exponent [Formula: see text] increases logarithmically for small [Formula: see text] values and decreases fast to a stable level.

Taylor's law, via ratios, for some distributions with infinite mean

2017 ◽  
Vol 54 (3) ◽  
pp. 657-669 ◽  
Author(s):  
Mark Brown ◽  
Joel E. Cohen ◽  
Victor H. de la Peña
Keyword(s):  
Population Density ◽  
Probability Distributions ◽  
Branching Processes ◽  
Population Variance ◽  
Classical Probability ◽  
Birth And Death Processes ◽  
Taylor’S Law ◽  
The Mean ◽  
Fluctuation Scaling ◽  
First Time

Abstract Taylor's law (TL) originated as an empirical pattern in ecology. In many sets of samples of population density, the variance of each sample was approximately proportional to a power of the mean of that sample. In a family of nonnegative random variables, TL asserts that the population variance is proportional to a power of the population mean. TL, sometimes called fluctuation scaling, holds widely in physics, ecology, finance, demography, epidemiology, and other sciences, and characterizes many classical probability distributions and stochastic processes such as branching processes and birth-and-death processes. We demonstrate analytically for the first time that a version of TL holds for a class of distributions with infinite mean. These distributions, a subset of stable laws, and the associated TL differ qualitatively from those of light-tailed distributions. Our results employ and contribute to the methodology of Albrecher and Teugels (2006) and Albrecher et al. (2010). This work opens a new domain of investigation for generalizations of TL.

scholarly journals Influence of a Standing Wave Flow-Field on the Dynamics of a Spray Diffusion Flame

Fluids ◽  
2021 ◽  
Vol 6 (1) ◽  
pp. 27
Author(s):  
J. Barry Greenberg ◽  
David Katoshevski
Keyword(s):  
Liquid Phase ◽  
Flow Field ◽  
Standing Wave ◽  
Diffusion Flame ◽  
Stokes Number ◽  
Flame Height ◽  
Wave Flow ◽  
Two Dimensional ◽  
Governing Equations ◽  
First Time

A theoretical investigation of the influence of a standing wave flow-field on the dynamics of a laminar two-dimensional spray diffusion flame is presented for the first time. The mathematical analysis permits mild slip between the droplets and their host surroundings. For the liquid phase, the use of a small Stokes number as the perturbation parameater enables a solution of the governing equations to be developed. Influence of the standing wave flow-field on droplet grouping is described by a specially constructed modification of the vaporization Damkohler number. Instantaneous flame front shapes are found via a solution for the usual Schwab–Zeldovitch parameter. Numerical results obtained from the analytical solution uncover the strong bearing that droplet grouping, induced by the standing wave flow-field, can have on flame height, shape, and type (over- or under-ventilated) and on the existence of multiple flame fronts.

scholarly journals A novel and potentially scalable CVD-based route towards SnO2:Mo thin films as transparent conducting oxides

2021 ◽  
Author(s):  
Tianlei Ma ◽  
Marek Nikiel ◽  
Andrew G. Thomas ◽  
Mohamed Missous ◽  
David J. Lewis
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Mixed Valence ◽  
Chemical Vapour ◽  
X Ray Diffraction ◽  
X Ray ◽  
Conducting Oxides ◽  
Valence States ◽  
3 Omega ◽  
First Time

AbstractIn this report, we prepared transparent and conducting undoped and molybdenum-doped tin oxide (Mo–SnO2) thin films by aerosol-assisted chemical vapour deposition (AACVD). The relationship between the precursor concentration in the feed and in the resulting films was studied by energy-dispersive X-ray spectroscopy, suggesting that the efficiency of doping is quantitative and that this method could potentially impart exquisite control over dopant levels. All SnO2 films were in tetragonal structure as confirmed by powder X-ray diffraction measurements. X-ray photoelectron spectroscopy characterisation indicated for the first time that Mo ions were in mixed valence states of Mo(VI) and Mo(V) on the surface. Incorporation of Mo6+ resulted in the lowest resistivity of $$7.3 \times 10^{{ - 3}} \Omega \,{\text{cm}}$$ 7.3 × 10 - 3 Ω cm , compared to pure SnO2 films with resistivities of $$4.3\left( 0 \right) \times 10^{{ - 2}} \Omega \,{\text{cm}}$$ 4.3 0 × 10 - 2 Ω cm . Meanwhile, a high transmittance of 83% in the visible light range was also acquired. This work presents a comprehensive investigation into impact of Mo doping on SnO2 films synthesised by AACVD for the first time and establishes the potential for scalable deposition of SnO2:Mo thin films in TCO manufacturing. Graphical abstract

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

scholarly journals 2D weak anti-localization in thin films of the topological semimetal Pd$$_{3}$$Bi$$_{2}$$S$$_{2}$$

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Shama ◽  
R. K. Gopal ◽  
Goutam Sheet ◽  
Yogesh Singh
Keyword(s):  
Thin Films ◽  
Phonon Scattering ◽  
Surface States ◽  
Relaxation Mechanism ◽  
Transport Studies ◽  
Bulk Carriers ◽  
Topological Semimetal ◽  
Topological Surface ◽  
First Time ◽  
Electron Phonon Scattering

AbstractPd$$_{3}$$ 3 Bi$$_{2}$$ 2 S$$_{2}$$ 2 (PBS) is a recently proposed topological semimetal candidate. However, evidence for topological surface states have not yet been revealed in transport measurements due to the large mobility of bulk carriers. We report the growth and magneto-transport studies of PBS thin films where the mobility of the bulk carriers is reduced by two orders of magnitude, revealing for the first time, contributions from the 2-dimensional (2D) topological surface states in the observation of the 2D weak anti-localization (WAL) effect in magnetic field and angle dependent conductivity measurements. The magnetotransport data is analysed within the 2D Hikami-Larkin-Nagaoka (HLN) theory. The analysis suggests that multiple conduction channels contribute to the transport. It is also found that the temperature dependence of the dephasing length can’t be explained only by electron-electron scattering and that electron-phonon scattering also contributes to the phase relaxation mechanism in PBS films.

scholarly journals Nanoscale Transition Metal Thin Films: Growth Characteristics and Scaling Law for Interlayer Formation

2019 ◽  
Vol 11 (49) ◽  
pp. 46311-46326 ◽  
Author(s):  
Anirudhan Chandrasekaran ◽  
Robbert W. E. van de Kruijs ◽  
Jacobus M. Sturm ◽  
Andrey A. Zameshin ◽  
Fred Bijkerk
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Scaling Law ◽  
Growth Characteristics ◽  
Metal Thin Films

scholarly journals Detection of nitroaromatic vapours with diketopyrrolopyrrole thin films: exploring the role of structural order and morphology on thin film properties and fluorescence quenching efficiency

2015 ◽  
Vol 51 (6) ◽  
pp. 1143-1146 ◽  
Author(s):  
Monika Warzecha ◽  
Jesus Calvo-Castro ◽  
Alan R. Kennedy ◽  
Alisdair N. Macpherson ◽  
Kenneth Shankland ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Fluorescence Quenching ◽  
Optical Detection ◽  
Film Properties ◽  
Structural Order ◽  
Quenching Efficiency ◽  
First Time

Sensitive optical detection of nitroaromatic vapours with diketopyrrolopyrrole thin films is reported for the first time.

YBa2Cu3O7 Thin Films on Polycrystalline Diamond Films with Buffer Layers

1992 ◽  
Vol 275 ◽  
Author(s):  
G. Cui ◽  
C. P. Beetz ◽  
B. A. Lincoln ◽  
P. S. Kirlin
Keyword(s):  
Thin Films ◽  
Diamond Films ◽  
Rf Sputtering ◽  
Polycrystalline Diamond ◽  
Fast Response ◽  
Buffer Layers ◽  
Multichip Modules ◽  
Ir Detectors ◽  
Ybco Films ◽  
First Time

ABSTRACTThe deposition of in-situ YBa2CU3O7-δ Superconducting films on polycrystalline diamond thin films has been demonstrated for the first time. Three different composite buffer layer systems have been explored for this purpose: (1) Diamond/Zr/YSZ/YBCO, (2) Diamond/Si3N4/YSZ/YBCO, and (3) Diamond/SiO2/YSZ/YBCO. The Zr was deposited by dc sputtering on the diamond films at 450 to 820 °C. The YSZ was deposited by reactive on-axis rf sputtering at 680 to 750 °C. The Si3N4 and SiO2 were also deposited by on-axis rf sputtering at 400 to 700 °C. YBCO films were grown on the buffer layers by off-axis rf sputtering at substrate temperatures between 690 °C and 750 °C. In all cases, the as-deposited YBCO films were superconducting above 77 K. This demonstration enables the fabrication of low heat capacity, fast response time bolometric IR detectors and paves the way for the use of HTSC on diamond for interconnect layers in multichip modules.

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