scholarly journals Design of CNTFET Based Domino Wide OR Gates Using Dual Chirality for Reducing Subthreshold Leakage Current

2021 ◽  
Author(s):  
Vijay Kumar Magraiya ◽  
Tarun Kumar Gupta ◽  
Bharat Garg
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Leakage Current ◽  
Field Effect Transistors ◽  
Leakage Power ◽  
High Input ◽  
Low Input ◽  
Prime Concern ◽  
Subthreshold Leakage ◽  
Domino Circuits

Abstract The leakage current is prime concern in the modern portable battery operated device. However, various techniques are presented and performance is evaluated using MOSFET and FinFET devices. To further reduce leakage current for improved battery backup in portable devices, new devicesnamely Carbon Nano Tube Field Effect transistors (CNTFETs) can be used for design of different digital circuits. In this paper, subthreshold leakage power of dual chiral CNTFET based domino circuit is investigated and also the results are compared with single chiral CNTFET domino circuits. For better performance, threshold voltage of CNTFET in critical path is varied by changing the diameter or chirality of carbon nanotube. Subthreshold leakage power saving in dual chiral standard and LECTOR based domino circuits for OR2, OR4, OR8 & OR16 for low temperature (25°C) & low input ranges from 90.36- 95.96% and from 91.97-97.3%; for low temperature & high input ranges from 90.66-95.23% and from 92.85-96.39%; for high temperature (110°C) & low input ranges from 89.24- 99.73% and from 27.5-99.83%; for high temperature & high input ranges from 89.65-97.86% and from 91.85-99.76% when compared with single chiral standard and LECTOR based domino circuits respectively.

Profiling Different Kinds of Generated Defects at Elevated Temperature in Both SiO2 and High-k Dielectrics

2010 ◽  
Vol 1252 ◽  
Author(s):  
Sahar Sahhaf ◽  
Robin Degraeve ◽  
Mohammed Zahid ◽  
Guido Groeseneken
Keyword(s):  
High Temperature ◽  
Elevated Temperature ◽  
Low Temperature ◽  
Leakage Current ◽  
Charge Injection ◽  
Constant Voltage ◽  
High K ◽  
Voltage Stress ◽  
Stress Induced Leakage Current ◽  
High K Dielectric

AbstractIn this work, the effect of elevated temperature on the generated defects with constant voltage stress (CVS) in SiO2 and SiO2/HfSiO stacks is investigated. Applying Trap Spectroscopy by Charge Injection and Sensing (TSCIS) to 6.5 nm SiO2 layers, different kinds of generated traps are profiled at low and high temperature. Also the Stress-Induced Leakage Current (SILC) spectrum of high-k dielectric stack is different at elevated temperature indicating that degradation and breakdown at high temperature is not equivalent to that at low temperature and therefore, extrapolation of data from high to low T or vice versa is challenging.

scholarly journals Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors

2019 ◽  
Vol 10 ◽  
pp. 1125-1130 ◽  
Author(s):  
Dapeng Wang ◽  
Mamoru Furuta
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Low Temperature ◽  
Leakage Current ◽  
Thin Film Transistors ◽  
Temperature Treatment ◽  
Treatment Temperature ◽  
Negative Bias ◽  
Indium Gallium Zinc Oxide ◽  
Negative Bias Illumination Stress

This study examines the effect of the annealing temperature on the initial electrical characteristics and photo-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). The extracted electrical parameters from transfer curves suggest that a low-temperature treatment maintains a high density of defects in the IGZO bulk, whereas high-temperature annealing causes a quality degradation of the adjacent interfaces. Light of short wavelengths below 460 nm induces defect generation in the forward measurement and the leakage current increases in the reverse measurement, especially for the low-temperature-annealed device. The hysteresis after negative-bias-illumination-stress (NBIS) is quantitatively investigated by using the double-scan mode and a positive gate pulse. Despite the abnormal transfer properties in the low-temperature-treated device, the excited holes are identically trapped at the front interface irrespective of treatment temperature. NBIS-induced critical instability occurs in the high-temperature-annealed TFT.

Two Step O2/N2O Plasma Annealing for the Reduction of Leakage Current in Amorphous Ta2O5 Films

1999 ◽  
Vol 567 ◽  
Author(s):  
W.S. Lau ◽  
M.T. Chandima Perera ◽  
T. Han ◽  
N. P. Sandler ◽  
C.H. Tung ◽  
...  
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Grain Boundaries ◽  
Leakage Current ◽  
Tantalum Pentoxide ◽  
High Temperature Annealing ◽  
Voltage Range ◽  
Annealing Step ◽  
Current Reduction ◽  
Plasma Annealing

ABSTRACTAs deposited tantalum pentoxide (Ta2O5) films are amorphous. The films will remain amorphous after O2 or N2O plasma annealing at low temperature. High temperature annealing will produce polycrystalline films where grain boundaries can generate leakage current. Previously, we have shown that N2O plasma annealing is superior to O2 plasma annealing in terms of leakage current reduction for AI/Ta2O5/Si capacitors. However, for TiN/Ta2O5/Si capacitors, the leakage current tends to be higher at low bias voltage for N2O plasma annealing compared to O2 plasma annealing. By adding an 02 plasma annealing step and then comparing TiN/Ta2O5/Si capacitors with two step O2/N2O plasma annealing with respect to similar structures with two step O2/O2 plasma annealing, it can be easily seen that TiN/Ta2O5/Si capacitors with two step O2/N2O plasma annealing have lower leakage current compared to similar structures with two step O2/O2 plasma annealing throughtout the voltage range tested.

Abnormal Subthreshold Leakage Current at High Temperature in InGaZnO Thin-Film Transistors

2012 ◽  
Vol 33 (4) ◽  
pp. 540-542 ◽  
Author(s):  
Geng-Wei Chang ◽  
Ting-Chang Chang ◽  
Jhe-Ciou Jhu ◽  
Tsung-Ming Tsai ◽  
Yong-En Syu ◽  
...  
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Leakage Current ◽  
Thin Film Transistors ◽  
Subthreshold Leakage

Low Temperature Tantalum Pentoxide Thin Films

1992 ◽  
Vol 284 ◽  
Author(s):  
Kee-Won Kwon ◽  
Chang-Seok Kang ◽  
Tai-su Park ◽  
Yong-Bin Sun ◽  
Neal Sandler ◽  
...  
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Leakage Current ◽  
Single Phase ◽  
High Reliability ◽  
Current Source ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Temperature Deposition ◽  
Post Deposition

ABSTRACTTa2O5 films of high reliability and low leakage current density were obtained by low temperature deposition and subsequent high temperature oxygen anneal. At higher temperatures than 410°C, growth was governed by the formation of radicals in gas phase and oxidation on the surface, while at lower temperatures by the dissociation of reactant on the surface of substrates. As a result, the films deposited at lower temperatures had undensified structures, and contained more carbon that might be a leakage current source in Ta2O5 film. During post-deposition heat treatment in 800°C oxidating ambient, carbon was removed away and silicon was diffused from the substrate into the Ta2O5 film efficiently for its as-grown porous structure. After oxygen anneal, low temperature films get denser and are crystallized to mixed phase of orthorhombic and hexagonal Ta2O5, while high temperature films crystallized to orthorhombic single phase. Ta2O5 capacitor with low temperature films showed superior leakage characteristics applicable to sub-half micron memory devices.

scholarly journals Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics

Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 721
Author(s):  
Maksym Dub ◽  
Pavlo Sai ◽  
Maciej Sakowicz ◽  
Lukasz Janicki ◽  
Dmytro B. But ◽  
...  
Keyword(s):  
Leakage Current ◽  
Field Effect Transistors ◽  
Trap Density ◽  
Double Quantum ◽  
Frequency Noise ◽  
Large Area ◽  
Back Gate ◽  
Noise Characteristics ◽  
Noise Measurements ◽  
Subthreshold Leakage

AlGaN/GaN fin-shaped and large-area grating gate transistors with two layers of two-dimensional electron gas and a back gate were fabricated and studied experimentally. The back gate allowed reducing the subthreshold leakage current, improving the subthreshold slope and adjusting the threshold voltage. At a certain back gate voltage, transistors operated as normally-off devices. Grating gate transistors with a high gate area demonstrated little subthreshold leakage current, which could be further reduced by the back gate. The low frequency noise measurements indicated identical noise properties and the same trap density responsible for noise when the transistors were controlled by either top or back gates. This result was explained by the tunneling of electrons to the traps in AlGaN as the main noise mechanism. The trap density extracted from the noise measurements was similar or less than that reported in the majority of publications on regular AlGaN/GaN transistors.

Exsolution and inversion in pigeonite from the Whin Sill, Northern England

1978 ◽  
Vol 36 (1) ◽  
pp. 474-475
Author(s):  
P.P.K. Smith
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Homogeneous Nucleation ◽  
Silicate Mineral ◽  
Antiphase Boundaries ◽  
Two Phase ◽  
Primitive Form ◽  
The Core ◽  
Nucleation Mechanisms ◽  
And Inversion

Grains of pigeonite, a calcium-poor silicate mineral of the pyroxene group, from the Whin Sill dolerite have been ion-thinned and examined by TEM. The pigeonite is strongly zoned chemically from the composition Wo8En64FS28 in the core to Wo13En34FS53 at the rim. Two phase transformations have occurred during the cooling of this pigeonite:- exsolution of augite, a more calcic pyroxene, and inversion of the pigeonite from the high- temperature C face-centred form to the low-temperature primitive form, with the formation of antiphase boundaries (APB's). Different sequences of these exsolution and inversion reactions, together with different nucleation mechanisms of the augite, have created three distinct microstructures depending on the position in the grain.In the core of the grains small platelets of augite about 0.02μm thick have farmed parallel to the (001) plane (Fig. 1). These are thought to have exsolved by homogeneous nucleation. Subsequently the inversion of the pigeonite has led to the creation of APB's.

Superconducting Wind Generators with Capacities of 10 MW and Larger

2020 ◽  
Vol 10 (10) ◽  
pp. 59-67
Author(s):  
Victor N. ANTIPOV ◽  
◽  
Andrey D. GROZOV ◽  
Anna V. IVANOVA ◽  
◽  
...  
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Wind Power ◽  
State Of The Art ◽  
Superconducting Materials ◽  
Commercial Application ◽  
Synchronous Generators ◽  
High Temperature Superconducting ◽  
Wind Generators ◽  
Main Factor

The overall dimensions and mass of wind power units with capacities larger than 10 MW can be improved and their cost can be decreased by developing and constructing superconducting synchronous generators. The article analyzes foreign conceptual designs of superconducting synchronous generators based on different principles: with the use of high- and low-temperature superconductivity, fully superconducting or only with a superconducting excitation system, and with the use of different materials (MgB2, Bi2223, YBCO). A high cost of superconducting materials is the main factor impeding commercial application of superconducting generators. In view of the state of the art in the technology for manufacturing superconductors and their cost, a conclusion is drawn, according to which a synchronous gearless superconducting wind generator with a capacity of 10 MW with the field winding made of a high-temperature superconducting material (MgB2, Bi-2223 or YBCO) with the «ferromagnetic stator — ferromagnetic rotor» topology, with the stator diameter equal to 7—9 m, and with the number of poles equal to 32—40 has prospects for its practical use in the nearest future.

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