scholarly journals Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics

Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 721
Author(s):  
Maksym Dub ◽  
Pavlo Sai ◽  
Maciej Sakowicz ◽  
Lukasz Janicki ◽  
Dmytro B. But ◽  
...  
Keyword(s):  
Leakage Current ◽  
Field Effect Transistors ◽  
Trap Density ◽  
Double Quantum ◽  
Frequency Noise ◽  
Large Area ◽  
Back Gate ◽  
Noise Characteristics ◽  
Noise Measurements ◽  
Subthreshold Leakage

AlGaN/GaN fin-shaped and large-area grating gate transistors with two layers of two-dimensional electron gas and a back gate were fabricated and studied experimentally. The back gate allowed reducing the subthreshold leakage current, improving the subthreshold slope and adjusting the threshold voltage. At a certain back gate voltage, transistors operated as normally-off devices. Grating gate transistors with a high gate area demonstrated little subthreshold leakage current, which could be further reduced by the back gate. The low frequency noise measurements indicated identical noise properties and the same trap density responsible for noise when the transistors were controlled by either top or back gates. This result was explained by the tunneling of electrons to the traps in AlGaN as the main noise mechanism. The trap density extracted from the noise measurements was similar or less than that reported in the majority of publications on regular AlGaN/GaN transistors.

Study of the Drain Leakage Current in Bottom-Gated Nanocrystalline Silicon Thin-Film Transistors by Conduction and Low-Frequency Noise Measurements

2007 ◽  
Vol 54 (5) ◽  
pp. 1076-1082 ◽  
Author(s):  
Argyrios T. Hatzopoulos ◽  
Nikolaos Arpatzanis ◽  
Dimitrios H. Tassis ◽  
Charalabos A. Dimitriadis ◽  
Maher Oudwan ◽  
...  
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
Nanocrystalline Silicon ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Silicon Thin Film ◽  
Noise Measurements

Low-frequency noise characteristics of AlInAs/GaInAs modulation-doped field-effect transistors

1989 ◽  
Vol 25 (16) ◽  
pp. 1039 ◽  
Author(s):  
G. Sasaki ◽  
W.-P. Hong ◽  
G.-K. Chang ◽  
R. Bhat ◽  
F.S. Turco ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Characteristics

scholarly journals AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

Micromachines ◽  
2020 ◽  
Vol 11 (12) ◽  
pp. 1131
Author(s):  
Justinas Jorudas ◽  
Artūr Šimukovič ◽  
Maksym Dub ◽  
Maciej Sakowicz ◽  
Paweł Prystawko ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Hybrid Material ◽  
Low Frequency ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Noise Characteristics ◽  
Noise Measurements

We report on the high-voltage, noise, and radio frequency (RF) performances of aluminium gallium nitride/gallium nitride (AlGaN/GaN) on silicon carbide (SiC) devices without any GaN buffer. Such a GaN–SiC hybrid material was developed in order to improve thermal management and to reduce trapping effects. Fabricated Schottky barrier diodes (SBDs) demonstrated an ideality factor n at approximately 1.7 and breakdown voltages (fields) up to 780 V (approximately 0.8 MV/cm). Hall measurements revealed a thermally stable electron density at N2DEG = 1 × 1013 cm−2 of two-dimensional electron gas in the range of 77–300 K, with mobilities μ = 1.7 × 103 cm2/V∙s and μ = 1.0 × 104 cm2/V∙s at 300 K and 77 K, respectively. The maximum drain current and the transconductance were demonstrated to be as high as 0.5 A/mm and 150 mS/mm, respectively, for the transistors with gate length LG = 5 μm. Low-frequency noise measurements demonstrated an effective trap density below 1019 cm−3 eV−1. RF analysis revealed fT and fmax values up to 1.3 GHz and 6.7 GHz, respectively, demonstrating figures of merit fT × LG up to 6.7 GHz × µm. These data further confirm the high potential of a GaN–SiC hybrid material for the development of thin high electron mobility transistors (HEMTs) and SBDs with improved thermal stability for high-frequency and high-power applications.

LOW FREQUENCY NOISE AND INTERFACE DENSITY OF TRAPS IN InGaAs MOSFETs WITH GdScO3 HIGH-K DIELECTRIC

2011 ◽  
Vol 20 (01) ◽  
pp. 105-113
Author(s):  
S. RUMYANTSEV ◽  
W. STILLMAN ◽  
M. SHUR ◽  
T. HEEG ◽  
D.G. SCHLOM ◽  
...  
Keyword(s):  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Trap Density ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Enhancement Mode ◽  
High K ◽  
High K Dielectric

Insulated gate n-channel enhancement mode InGaAs field effect transistors with the GdScO 3 high-k dielectric have been fabricated and studied. The low frequency noise was high indicating a high interface density of traps. Trap density and its dependence on the gate voltage have been extracted from the noise and conductance measurements.

scholarly journals Generation Recombination Noise in GaN Photoconducting Detectors

1999 ◽  
Vol 4 (S1) ◽  
pp. 817-822
Author(s):  
M. Misra ◽  
D. Doppalapudi ◽  
A.V. Sampath ◽  
T.D. Moustakas ◽  
P.H. McDonald
Keyword(s):  
Room Temperature ◽  
Low Frequency ◽  
Optical Excitation ◽  
Noise Spectrum ◽  
High Resistivity ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Characteristics ◽  
Deep Traps ◽  
Noise Measurements

Low frequency noise measurements are a powerful tool for detecting deep traps in semiconductor devices and investigating trapping-recombination mechanisms. We have performed low frequency noise measurements on a number of photoconducting detectors fabricated on autodoped n-GaN films grown by ECR-MBE. At room temperature, the noise spectrum is dominated by 1/f noise and thermal noise for low resistivity material and by generationrecombination (G-R) noise for high resistivity material. Noise characteristics were measured as a function of temperature in the 80K to 300K range. At temperatures below 150K, 1/f noise is dominant and at temperatures above 150K, G-R noise is dominant. Optical excitation revealed the presence of traps not observed in the dark, at room temperature.

scholarly journals Low frequency noise and trap density in GaN/AlGaN field effect transistors

2019 ◽  
Vol 115 (18) ◽  
pp. 183501 ◽  
Author(s):  
P. Sai ◽  
J. Jorudas ◽  
M. Dub ◽  
M. Sakowicz ◽  
V. Jakštas ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Trap Density ◽  
Frequency Noise ◽  
Low Frequency Noise
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