Design of Two-Stage Differential Amplifier with Stacked Transistors for Biomedical Applications

2021 ◽  
Author(s):  
Prateek Jain ◽  
Shambhu Dayal Sharma ◽  
Amit M. Joshi
Keyword(s):  
Low Noise ◽  
Differential Amplifier ◽  
Cmos Process ◽  
Ecg Signal ◽  
Signal Conditioning ◽  
Process Technology ◽  
Two Stage ◽  
Pass Filter ◽  
Rejection Ratio ◽  
Simulation Results

Abstract In this paper, CMOS based optimized two stage differential amplifier circuit for convenient biomedical signal conditioning system is presented. A low-power, low noise & high CMRR differential amplifier is designed for portable ECG signal conditioning using MOS based low pass filter with stacked transistors. The stack transistors with MOS which is connected at output terminal optimize the design for ECG signal conditioning and other biomedical device signal conditioning. The presented amplifier is designed with standard 45nm CMOS process technology at a 0.85 V supply voltage. The simulation results are derived using Cadence Analog Virtuoso Spectre Simulator. The simulation results show that the presented differential amplifier has a common-mode rejection ratio (CMRR) of 178dB at 100Hz, power supply rejection ratio (PSRR) of 68 dB and power dissipation of 1.5μW. The input referred (IR) noise is 3.83μV/√f and slew rate is 11volt/μsec. These obtained performance parameters is better and efficient compared to conventional differential amplifier. The noise performance is improved using proposed design compared to previous designed differential amplifier.

scholarly journals Design consideration in low dropout voltage regulator for batteryless power management unit

2019 ◽  
Vol 8 (4) ◽  
Author(s):  
Mohamad Khairul bin Mohd Kamel ◽  
Yan Chiew Wong
Keyword(s):  
System Development ◽  
Maximum Load ◽  
Open Loop ◽  
Low Noise ◽  
Green Technology ◽  
Voltage Regulator ◽  
Cmos Process ◽  
Process Technology ◽  
Pass Filter ◽  
Low Pass Filter

Harvesting energy from ambient Radio Frequency (RF) source is a great deal toward batteryless Internet of Thing (IoT) System on Chip (SoC) application as green technology has become a future interest. However, the harvested energy is unregulated thus it is highly susceptible to noise and cannot be used efficiently. Therefore, a dedicated low noise and high Power Supply Ripple Rejection (PSRR) of Low Dropout (LDO) voltage regulator are needed in the later stages of system development to supply the desired load voltage. Detailed analysis of the noise and PSRR of an LDO is not sufficient. This work presents a design of LDO to generate a regulated output voltage of 1.8V from 3.3V input supply targeted for 120mA load application. The performance of LDO is evaluated and analyzed. The PSRR and noise in LDO have been investigated by applying a low-pass filter. The proposed design achieves the design specification through the simulation results by obtaining 90.85dB of open-loop gain, 76.39º of phase margin and 63.46dB of PSRR respectively. The post-layout simulation shows degradation of gain and maximum load current due to parasitic issue. The measurement of maximum load regulation is dropped to 96mA compared 140mA from post-layout. The proposed LDO is designed using 180nm Silterra CMOS process technology.

scholarly journals A Four-Channel Low-Noise Readout IC for Air Flow Measurement Using Hot Wire Anemometer in 0.18 μm CMOS Technology

Sensors ◽  
2021 ◽  
Vol 21 (14) ◽  
pp. 4694
Author(s):  
Kyeongsik Nam ◽  
Hyungseup Kim ◽  
Yongsu Kwon ◽  
Gyuri Choi ◽  
Taeyup Kim ◽  
...  
Keyword(s):  
Supply Voltage ◽  
Air Flow ◽  
Low Noise ◽  
Cmos Process ◽  
Significant Information ◽  
Flow Measurements ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Op Amp ◽  
Noise Characteristics

Air flow measurements provide significant information required for understanding the characteristics of insect movement. This study proposes a four-channel low-noise readout integrated circuit (IC) in order to measure air flow (air velocity), which can be beneficial to insect biomimetic robot systems that have been studied recently. Instrumentation amplifiers (IAs) with low-noise characteristics in readout ICs are essential because the air flow of an insect’s movement, which is electrically converted using a microelectromechanical systems (MEMS) sensor, generally produces a small signal. The fundamental architecture employed in the readout IC is a three op amp IA, and it accomplishes low-noise characteristics by chopping. Moreover, the readout IC has a four-channel input structure and implements an automatic offset calibration loop (AOCL) for input offset correction. The AOCL based on the binary search logic adjusts the output offset by controlling the input voltage bias generated by the R-2R digital-to-analog converter (DAC). The electrically converted air flow signal is amplified using a three op amp IA, which is passed through a low-pass filter (LPF) for ripple rejection that is generated by chopping, and converted to a digital code by a 12-bit successive approximation register (SAR) analog-to-digital converter (ADC). Furthermore, the readout IC contains a low-dropout (LDO) regulator that enables the supply voltage to drive digital circuits, and a serial peripheral interface (SPI) for digital communication. The readout IC is designed with a 0.18 μm CMOS process and the current consumption is 1.886 mA at 3.3 V supply voltage. The IC has an active area of 6.78 mm2 and input-referred noise (IRN) characteristics of 95.4 nV/√Hz at 1 Hz.

scholarly journals A 219-µW ultra-low power low-noise amplifier for IEEE 802.15.4 based battery powered, portable, wearable IoT applications

2021 ◽  
Vol 3 (4) ◽  
Author(s):  
S. Chrisben Gladson ◽  
Adith Hari Narayana ◽  
V. Thenmozhi ◽  
M. Bhaskar
Keyword(s):  
Low Power ◽  
Ieee 802.15.4 ◽  
Low Voltage ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Cmos Process ◽  
Process Technology ◽  
Ultra Low Power ◽  
Power Mode ◽  
Noise Amplifier

AbstractDue to the increased processing data rates, which is required in applications such as fifth-generation (5G) wireless networks, the battery power will discharge rapidly. Hence, there is a need for the design of novel circuit topologies to cater the demand of ultra-low voltage and low power operation. In this paper, a low-noise amplifier (LNA) operating at ultra-low voltage is proposed to address the demands of battery-powered communication devices. The LNA dual shunt peaking and has two modes of operation. In low-power mode (Mode-I), the LNA achieves a high gain ($$S21$$ S 21 ) of 18.87 dB, minimum noise figure ($${NF}_{min.}$$ NF m i n . ) of 2.5 dB in the − 3 dB frequency range of 2.3–2.9 GHz, and third-order intercept point (IIP3) of − 7.9dBm when operating at 0.6 V supply. In high-power mode (Mode-II), the achieved gain, NF, and IIP3 are 21.36 dB, 2.3 dB, and 13.78dBm respectively when operating at 1 V supply. The proposed LNA is implemented in UMC 180 nm CMOS process technology with a core area of $$0.40{\mathrm{ mm}}^{2}$$ 0.40 mm 2 and the post-layout validation is performed using Cadence SpectreRF circuit simulator.

CMOS Amplifier for Neural Signal Recording Applications

2015 ◽  
Vol 645-646 ◽  
pp. 1279-1284
Author(s):  
Zhang Zhang ◽  
Zheng Xi Cheng ◽  
Yi Wei Zhuang
Keyword(s):  
Low Noise ◽  
Cmos Process ◽  
Differential Mode ◽  
Neural Signal ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Voltage Range ◽  
Cmos Amplifier ◽  
Signal Recording ◽  
Neural Signal Recording

A low power low noise CMOS amplifier with integrated filter for neural signal recording is designed and fabricated with CSMC 0.5 μm CMOS process. DC offsets introduced by electrode-tissue interface are rejected through a feedback low-pass filter. The bandwidth of the amplifier is in 3.5Hz-5.5KHz range, and the gain is about 48dB in the midband. AC input differential mode voltage range is 10mV, and DC input differential mode voltage range is 180mV. The amplifier can accommodate 180mV DC offsets drift and 10mV neural spikes. The neural probe array is integrated directly on the surface of the amplifier array chip, and is tested in saline solution, and also is implanted in rats in vivo , the results of the experiments show that the amplifier is suitable for neural signal recording. The power dissipation is about 14μW while consuming 0.16 mm2 of chip area, which satisfies implantable devices requirements.

scholarly journals A 0.5 V 68 nW ECG Monitoring Analog Front-End for Arrhythmia Diagnosis

2018 ◽  
Vol 8 (3) ◽  
pp. 27 ◽  
Author(s):  
Avish Kosari ◽  
Jacob Breiholz ◽  
NingXi Liu ◽  
Benton Calhoun ◽  
David Wentzloff
Keyword(s):  
Low Power ◽  
Power Efficiency ◽  
Low Noise ◽  
Signal Acquisition ◽  
Cmos Process ◽  
Ecg Signal ◽  
Ecg Monitoring ◽  
Power Circuit ◽  
Front End ◽  
Analog Front End

This paper presents a power efficient analog front-end (AFE) for electrocardiogram (ECG) signal monitoring and arrhythmia diagnosis. The AFE uses low-noise and low-power circuit design methodologies and aggressive voltage scaling to satisfy both the low power consumption and low input-referred noise requirements of ECG signal acquisition systems. The AFE was realized with a three-stage fully differential AC-coupled amplifier, and it provides bio-signal acquisition with programmable gain and bandwidth. The AFE was implemented in a 130 nm CMOS process, and it has a measured tunable mid-band gain from 31 to 52 dB with tunable low-pass and high-pass corner frequencies. Under only 0.5 V supply voltage, it consumes 68 nW of power with an input-referred noise of 2.8 µVrms and a power efficiency factor (PEF) of 3.9, which makes it very suitable for energy-harvesting applications. The low-noise 68nW AFE was also integrated on a self-powered physiological monitoring System on Chip (SoC) that is used to capture ECG bio-signals. Heart rate extraction (R-R) detection algorithms were implemented and utilized to analyze the ECG data received by the AFE, showing the feasibility of <100 nW AFE for continuous ECG monitoring applications.

The Design of Gm-C Low-Pass Filter for Micromachined Gyroscope

2014 ◽  
Vol 609-610 ◽  
pp. 1072-1076
Author(s):  
Qiu Ye Lv ◽  
Chong He ◽  
Wen Jie Fan ◽  
Yu Feng Zhang ◽  
Xiao Wei Liu
Keyword(s):  
Process Model ◽  
Stop Band ◽  
Cutoff Frequency ◽  
Harmonic Distortion ◽  
Cmos Process ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Low Pass ◽  
Simulation Results ◽  
Micromachined Gyroscope

In this Paper, a 4th-Order Low-Pass Gm-C Filter is Presented. for the Design of Operational Tranconductance Amplifier(OTA), it Adopts the Techniques of Current Division and Current Cancellation. these Techniques can Help to Achieve a Low Transconductance Value. for the Architecture of the 4th-Order Gm-C Filter, it Consists of Two Biquads. the Two Biquads are Cascade Connected. the Gm-C Low-Pass Filter has been Implemented under 0.5 μm CMOS Process Model. the Final Simulation Results Show the Cutoff Frequency of the Filter is 100Hz and the Stop-Band Attenuation is Larger than 60dB. the Power Consumption is Lower than 1mW and the Total Harmonic Distortion(THD) is -55dB.

scholarly journals Noise-Cancelling CMOS Active Inductor and Its Application in RF Band-Pass Filter Design

2010 ◽  
Vol 2010 ◽  
pp. 1-8 ◽  
Author(s):  
Santosh Vema Krishnamurthy ◽  
Kamal El-Sankary ◽  
Ezz El-Masry
Keyword(s):  
Filter Design ◽  
Low Noise ◽  
Total Power ◽  
Active Inductor ◽  
Cmos Process ◽  
Band Pass Filter ◽  
Pass Filter ◽  
Noise Cancelling ◽  
Total Power Consumption ◽  
Band Pass

A CMOS active inductor with thermal noise cancelling is proposed. The noise of the transistor in the feed-forward stage of the proposed architecture is cancelled by using a feedback stage with a degeneration resistor to reduce the noise contribution to the input. Simulation results using 90 nm CMOS process show that noise reduction by 80% has been achieved. The maximum resonant frequency and the quality factor obtained are 3.8 GHz and 405, respectively. An RF band-pass filter has been designed based on the proposed noise cancelling active inductor. Tuned at 3.46 GHz, the filter features total power consumption of 1.4 mW, low noise figure of 5 dB, and IIP3 of −10.29 dBm.

scholarly journals A New CMOS Controllable Impedance Multiplier with Large Multiplication Factor

2017 ◽  
Vol 2017 ◽  
pp. 1-6 ◽  
Author(s):  
Munir A. Al-Absi
Keyword(s):  
Cmos Technology ◽  
Cmos Process ◽  
Multiplication Factor ◽  
Process Technology ◽  
Subthreshold Region ◽  
Low Pass ◽  
Simulation Results ◽  
High Pass

This paper presents a new compact controllable impedance multiplier using CMOS technology. The design is based on the use of the translinear principle using MOSFETs in subthreshold region. The value of the impedance will be controlled using the bias currents only. The impedance can be scaled up and down as required. The functionality of the proposed design was confirmed by simulation using BSIM3V3 MOS model in Tanner Tspice 0.18 μm TSMC CMOS process technology. Simulation results indicate that the proposed design is functioning properly with a tunable multiplication factor from 0.1- to 100-fold. Applications of the proposed multiplier in the design of low pass and high pass filters are also included.

100 MS/s, 10-BIT ADC USING PIPELINED SUCCESSIVE APPROXIMATION

2014 ◽  
Vol 23 (05) ◽  
pp. 1450057
Author(s):  
SAHAR SARAFI ◽  
KHEYROLLAH HADIDI ◽  
EBRAHIM ABBASPOUR ◽  
ABU KHARI BIN AAIN ◽  
JAVAD ABBASZADEH
Keyword(s):  
Successive Approximation ◽  
Sar Adc ◽  
Cmos Process ◽  
Pipelined Adc ◽  
Analog To Digital Converter ◽  
Digital Converter ◽  
Process Technology ◽  
Total Conversion ◽  
Analog To Digital ◽  
Simulation Results

This paper presents an analog-to-digital converter (ADC), using pipelined successive approximation register (SAR) architecture. The structure which is a combination of SAR-ADC and pipelined ADC benefits from each of their advantages. A new synchronization method is proposed to improve the pipelined SAR-ADC's speed. The proposed method reduces the total conversion without limiting the ADC performance. To evaluate the proposed method a 10-bit 100 MS/s is designed in 0.5 μm CMOS process technology. According to the obtained simulation results, the designed ADC digitizes a 9-MHz input with 54.19 dB SNDR while consuming 57.3 mw from a 5-V supply.

MOS Only Grounded Active Inductor Circuits and Their Filter Applications

2017 ◽  
Vol 26 (06) ◽  
pp. 1750098 ◽  
Author(s):  
Mustafa Konal ◽  
Firat Kacar
Keyword(s):  
Low Noise ◽  
Active Inductor ◽  
Cmos Process ◽  
Band Pass Filter ◽  
Mos Transistors ◽  
Pass Filter ◽  
Chip Area ◽  
Active Inductors ◽  
Band Pass ◽  
Filter Structures

This paper presents two grounded MOS only active inductor circuits. Both circuits have only two MOS transistors and two biasing currents. Thus, the proposed active inductors provide small chip area, tunability, low power consumption with 150[Formula: see text][Formula: see text]W and 90[Formula: see text][Formula: see text]W, respectively. To analyze their performance, a second-order band-pass filter and a third-order high-pass filter structures are presented with low noise as 7.5[Formula: see text]nV/[Formula: see text] and 9.14[Formula: see text]nV/[Formula: see text], respectively. The designed active inductors and filters are simulated in 0.18[Formula: see text][Formula: see text]m CMOS process parameters using LTSPICE.

Sign in / Sign up

Export Citation Format

Share Document