scholarly journals Акцепторное легирование мышьяком при осаждении слоев CdTe из диметилкадмия и диизопропилтеллура

2021 ◽  
Vol 55 (1) ◽  
pp. 9
Author(s):  
В.С. Евстигнеев ◽  
А.В. Чилясов ◽  
А.Н. Моисеев ◽  
С.В. Морозов ◽  
Д.И. Курицын
Keyword(s):  
Ionization Energy ◽  
Hole Concentration ◽  
Arsenic Concentration ◽  
Chemical Vapor ◽  
Argon Flow ◽  
Gaas Substrates ◽  
Activation Efficiency ◽  
Donor Acceptor ◽  
P Type ◽  
Arsenic Incorporation

The incorporation and activation of arsenic from tris(dimethylamino)arsine in CdTe layers grown by metalorganic chemical vapor deposition with dimethylcadmium and diisopropyltellurium on GaAs substrates are investigated. Arsenic incorporation into CdTe to depend on the crystallographic orientation of the layers and increases in the order (111)B<(100)<(310). Arsenic concentration in the CdTe layers is proportional to the tris(dimethylamino)arsine flow rate to the power of 1.4 and an increase with decrease of the diisopropyltellurium/dimethylcadmium ratio from 1.4 to 0.5. The as-grown CdTe:As layers had p-type conductivity with arsenic and hole concentrations of 1·1017–7·1018 and 2.7·1014–4.6·1015 cm–3, respectively, but the arsenic activation efficiency not exceeding 0.3%. After annealing in argon flow (250–450 ° C) the highest hole concentration and arsenic activation efficiency were 1·1017 cm–3 and ~4.5 % respectively. The ionization energy of arsenic determined from the temperature dependence of the hole concentration was in the range of 98–124 meV. Low-temperature photoluminescence spectra of the layers showed an emission peak with energy of 1.51 eV, which can be attributed to donor-acceptor recombination, where the acceptor is AsTe with ionization energy about 90 meV.

An effective and efficient approach to p-type AlN by Be2:O codoping from first-principles calculations

2016 ◽  
Vol 30 (20) ◽  
pp. 1650257
Author(s):  
Meng Zhao ◽  
Wenjun Wang ◽  
Jun Wang ◽  
Junwei Yang ◽  
Weijie Hu ◽  
...  
Keyword(s):  
First Principles ◽  
Ionization Energy ◽  
Hole Concentration ◽  
Valence Band Maximum ◽  
First Principles Calculations ◽  
Mutual Compensation ◽  
Efficient Approach ◽  
P Type ◽  
Codoping Method

Various Be:O-codoped AlN crystals have been investigated via first-principles calculations to evaluate the role of the different combinations in effectively and efficiently inducing p-type carriers. It is found that the O atom is favored to bond with two Be atoms. The formed Be2:O complexes decrease the acceptor ionization energy to 0.11 eV, which is 0.16 eV lower than that of an isolated Be in AlN, implying that the hole concentration could probably be increased by 2–3 orders of magnitude. The electronic structure of Be2:O-codoped AlN shows that the lower ionization energy can be attributed to the interaction between Be and O. The Be–O complexes, despite failing to induce p-type carriers for the mutual compensation of Be and O, introduce new occupied states on the valence-band maximum (VBM) and hence the energy needed for the transition of electrons to the acceptor level is reduced. Thus, the Be2:O codoping method is expected to be an effective and efficient approach to realizing p-type AlN.

scholarly journals Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD

Materials ◽  
2021 ◽  
Vol 14 (18) ◽  
pp. 5339
Author(s):  
Lian Zhang ◽  
Rong Wang ◽  
Zhe Liu ◽  
Zhe Cheng ◽  
Xiaodong Tong ◽  
...  
Keyword(s):  
First Principles ◽  
Metalorganic Chemical Vapor Deposition ◽  
Hole Concentration ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Nitrogen Vacancy ◽  
First Principle ◽  
Mg Doping ◽  
Limiting Condition ◽  
P Type

This work studied the regulation of hole concentration and mobility in p-InGaN layers grown by metalorganic chemical vapor deposition (MOCVD) under an N-rich environment. By adjusting the growth temperature, the hole concentration can be controlled between 6 × 1017/cm3 and 3 × 1019/cm3 with adjustable hole mobility from 3 to 16 cm2/V.s. These p-InGaN layers can meet different requirements of devices for hole concentration and mobility. First-principles defect calculations indicate that the p-type doping of InGaN at the N-rich limiting condition mainly originated from Mg substituting In (MgIn). In contrast with the compensation of nitrogen vacancy in p-type InGaN grown in a Ga-rich environment, the holes in p-type InGaN grown in an N-rich environment were mainly compensated by interstitial Mg (Mgi), which has very low formation energy.

Carbon Incorporation in Gaas grown by UHVCVD Using Trimethylgallium and Arsine

1992 ◽  
Vol 281 ◽  
Author(s):  
Seong-Ju Park ◽  
Jeong-Rae Ro ◽  
Jae-Ki Sim ◽  
El-Hang Lee
Keyword(s):  
Growth Rates ◽  
Hole Concentration ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Chemical Beam Epitaxy ◽  
Hydrogen Atoms ◽  
Carbon Incorporation ◽  
Significant Drop ◽  
P Type

ABSTRACTWe present results of a study on the effect of unprecracked arsine(AsH3) and trimethylgallium(TMGa) on carbon incorporation in UHVCVD(Ultra High Vacuum Chemical Vapor Deposition) grown GaAs epilayers on GaAs(100). Three distinct temperature-dependent regions of growth rates were identified as growth temperature was increased from 570 to 690°C. The growth rates were also strongly dependent on V/III ratio in a range of 5 to 30, which clearly indicates that the growth rate is determined by the amount of arsenic adsorbed on the surface at low V/III ratio and adsorption of TMGa or decomposition process at high V/III ratio. Hall concentration measurements and low temperature photoluminescence data show that the films are all p-type and their impurity concentrations are reduced by two orders of magnitude compared to those of epilayers grown by CBE(Chemical Beam Epitaxy) which employs TMGa and arsenic(precracked arsines) as source materials. Our results indicate that the hydrogen atoms dissociated from adsorbed arsine may remove hydrocarbon species resulting in a significant drop in hole concentration.

The Properties of GaInAsSb/GaSb Heterostructure Grown by Mocvd and P-GaInAsSb/N-GaSb Photodiodes

1995 ◽  
Vol 415 ◽  
Author(s):  
Baolin Zhang ◽  
Yixin Jin ◽  
Tianming Zhou ◽  
Hong Jiang ◽  
Yongqiang Ning ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Room Temperature ◽  
Metalorganic Chemical Vapor Deposition ◽  
Hole Concentration ◽  
Chemical Vapor ◽  
Infrared Transmission ◽  
Long Wavelength ◽  
Measurement Results ◽  
P Type ◽  
Metalorganic Chemical

ABSTRACTGaInAsSb/GaSb heterostructures have been grown by metalorganic chemical vapor deposition (MOCVD). The optical properties were characterized using low temperature(71K) photoluminescence(PL) and infrared transmission spectroscopy. The FWHM of the typical PL spectrum peaked at 2.3μm is 30meV. Hall measurement results for undoped GaInAsSb layers are presented showing a p-type background and low hole concentration of 6.5 × 1015cm−3. The room temperature performances of the p-GaInAsSb/n-GaSb photodiodes are reported. Its responsivity spectrum is peaked at 2.2 5μm and cuts off at 1.7μm in the short wavelength and at 2.4μm in the long wavelength, respectively. The room temperature detectivity D* is of 1 × 109cm.Hz1/2.W−2

Manipulation of Room Temperature Ferromagnetic behavior of GaMnN Epilayers

2009 ◽  
Vol 1198 ◽  
Author(s):  
Neeraj Nepal ◽  
M. Oliver Luen ◽  
Pavel Frajtag ◽  
John Zavada ◽  
Salah M. Bedair ◽  
...  
Keyword(s):  
Room Temperature ◽  
Hole Concentration ◽  
Chemical Vapor ◽  
Multilayer Structures ◽  
Organic Chemical ◽  
Ferromagnetic Behavior ◽  
Chemical Vapor Deposition Growth ◽  
Metal Organic ◽  
P Type ◽  
Organic Chemical Vapor Deposition

AbstractWe report on metal organic chemical vapor deposition growth of GaMnN/p-GaN/n-GaN multilayer structures and manipulation of room temperature (RT) ferromagnetism (FM) in a GaMnN layer. The GaMnN layer was grown on top of a n-GaN substrate and found to be almost always paramagnetic. However, when grown on a p-type GaN layer, a strong saturation magnetization (Ms) was observed. Ms was almost doubled after annealing demonstrating that the FM observed in GaMnN film is carrier-mediated. To control the hole concentration of the p-GaN layer by depletion, GaMnN/p-GaN/n-GaN multilayer structures of different p-GaN thickness (Xp) were grown on sapphire substrates. We have demonstrated that the FM depends on the Xp and the applied bias to the GaN p-n junction. The FM of these multilayer is independent on the top GaMnN layer thickness (tGaMnN) for tGaMnN >200 nm and decreases for tGaMnN < 200 nm. Thus the room temperature FM of GaMnN i-p-n structure can also be controlled by changing Xp and tGaMnN in the GaMnN i-p-n structures.

GROWTH AND CHARACTERIZATION OF p-Type GaAs LAYERS USING ATOMIC HYDROGEN AS A REAGENT

2001 ◽  
Vol 15 (17n19) ◽  
pp. 809-812 ◽  
Author(s):  
F. SILVA-ANDRADE ◽  
F. CHÁVEZ ◽  
F. TENORIO ◽  
N. MORALES ◽  
J. I. BECERRA PONCE DE LEON ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Atomic Hydrogen ◽  
Hole Concentration ◽  
Chemical Vapor ◽  
Conductivity Type ◽  
Technological Field ◽  
Vapor Deposition Technique ◽  
P Type ◽  
Residual Impurities

Atomic hydrogen has been found to have a great number of useful applications in the technological field of semiconducting materials. It has been used as a reagent in the epitaxial growth processes to control the incorporation of residual impurities. Atomic hydrogen can react with GaAs thus producing Ga- and As- hydrogen volatile species in controlled conditions. The atomic hydrogen can be produced in a chemical vapor deposition chamber using a hot tungsten filament. In this work we report the results of a study on GaAs layers grown using the close space vapor deposition technique with atomic hydrogen as a reagent. The conductivity type of the grown layers is closely related to the conductivity type of the GaAs source. We have grown p-type GaAs layers with l×1018 cm-3 hole concentration using GaAs sources with the same acceptor concentration. 10 K photoluminesence measurements were nlade on the source and the epitaxial GaAs layers. The PL spectra revealed that the residual impurities in the GaAs layers were originated from the source. The mirror like appearance of the grown layers as well as their electrical and optical characteristics demonstrate they can be used in the manufacture of GaAs semiconductor devices.

High quality p-type ZnO film grown on ZnO substrate by nitrogen and tellurium co-doping

2009 ◽  
Vol 1201 ◽  
Author(s):  
Seunghwan Park ◽  
Tsutomu Minegishi ◽  
jinsub Park ◽  
Hyunjae Lee ◽  
Toshinori Taishi ◽  
...  
Keyword(s):  
Electron Concentration ◽  
Hole Concentration ◽  
Nitrogen Concentration ◽  
Zno Film ◽  
Acceptor Pair ◽  
High Quality ◽  
Co Doping ◽  
Donor Acceptor ◽  
Doped Zno ◽  
P Type

AbstractNitrogen and tellurium co-doped ZnO (ZnO:[N+Te]) films have been grown on (0001) ZnO substrate by plasma-assisted molecular beam epitaxy. The electron concentration of tellurium doped ZnO (ZnO:Te) gradually increases, compared that of undoped ZnO (u-ZnO). On the other hand, conductivity of ZnO:[N+Te] changes from n-type to p-type characteristic with a hole concentration of 4×1016 cm-3. However, nitrogen doped ZnO film (ZnO:N) still remain as n-type conductivity with a electron concentration of 2.5×1017 cm-3. Secondary ion mass spectroscopy reveals that nitrogen concentration ([N]) of ZnO:[N+Te] film (2×1021 cm-3) is relatively higher than that of ZnO:N film (3×1020 cm-3). 10 K photoluminescence spectra shows that considerable improvement of emission properties of ZnO:[N+Te] with an emergence of narrow acceptor bound exciton (A°X, 3.359 eV) and donor-acceptor pair (DAP, 3.217 eV), compared with those of u-ZnO. Consequently, high quality p-type ZnO with high N concentration is realized by using Te and N co-doping technique due to reduction of Madelung energy.

Metalorganic Chemical Vapor Deposition of High Quality GaAs and AlGaAs Using Tertiarybutylarsine

1989 ◽  
Vol 145 ◽  
Author(s):  
G. Haacke ◽  
S. P. Watkins ◽  
H. Burkhard ◽  
C. J. Calbick ◽  
J. Quick
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
High Quality ◽  
Donor Acceptor ◽  
Line Widths ◽  
P Type ◽  
Low Temperature Photoluminescence ◽  
Undoped Gaas ◽  
Metalorganic Chemical

AbstractThis paper discusses recent improvements achieved in the growth of epitaxial layers of GaAs and AlGaAs using the liquid arsine substitute tertiarybutylarsine (TBA) and metal alkyls. The high purity TBA now available yields undoped GaAs with residual donor/acceptor concentrations in the low 1014 cm−3 range. Under optimized growth conditiorp the layers are either n-type and have 77*K mobilities up to 85,000 cm2 //Vs or they are compensated or p-type. For aluminum gallium arsenide, layers grown with TBA have properties similar to arsine-grown material as demonstrated by low temperature photoluminescence (PL). The PL efficiencies and line widths of the TBA-grown AlGaAs samples are comparable to those prepared with arsine.

Properties Of Inp Simultaneously Doped With Zinc And Sulfur Grown By Mocvd

1996 ◽  
Vol 442 ◽  
Author(s):  
C. M. Alavanja ◽  
C. J. Pinzone ◽  
S. K. Sputz ◽  
M. Geva
Keyword(s):  
Energy Levels ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Group V ◽  
Zn Diffusion ◽  
Group Iii ◽  
Donor Acceptor ◽  
And Performance ◽  
P Type ◽  
Secondary Ion

AbstractAs the p-type dopant most often used in metalorganic chemical vapor deposition (MOCVD) of Group III - Group V compound semiconductors, Zn presents problems in device design and performance because of its high diffusivity in these materials. While Zn diffusion into n-type layers such as InP:S has been observed frequently, there is little known as to the electronic and optical properties of the resultant material. We have grown InP samples by MOCVD which are doped with both Zn and S to levels as high as 3×1018 cm−3. These samples were analyzed by electrochemical C-V profiling, van der Pauw-Hall analysis, secondary ion mass spectroscopy (SIMS), and low temperature (10K) photoluminescence spectroscopy (PL). We have determined that good hole mobility is maintained in InP:Zn samples that are simultaneously doped with S up to a level of 4×1017 cm−3. PL analysis of co-doped samples shows peaks between 0.91 and 0.92 μm which are indicative of donor-acceptor transitions, and broad peaks with energy levels of approximately 1.0 μm which may be indicative of ZnS complexes or precipitates. SIMS analysis of Zn diffusion into Fe doped substrates shows that Zn diffusion is reduced in the presence of S in the lattice.

Photocurrent Spectroscopy Investigations of Mg-Related Defects Levels in p-Type GaN

1999 ◽  
Vol 595 ◽  
Author(s):  
S. J. Chung ◽  
O. H. Cha ◽  
H. K. Cho ◽  
M. S. Jeong ◽  
C-H. Hong ◽  
...  
Keyword(s):  
Hole Concentration ◽  
Chemical Vapor ◽  
Nitrogen Atmosphere ◽  
Organic Chemical ◽  
Substitutional Site ◽  
Photocurrent Spectroscopy ◽  
Metal Organic ◽  
P Type ◽  
Two Peaks ◽  
Mg Doped

AbstractThe defect levels associated with Mg impurity in p-type GaN films were systematically investigated in terms of doping concentration by photocurrent spectroscopy. Mg-doped GaN samples were grown on sapphire substrate by metal organic chemical vapor deposition and annealed in nitrogen atmosphere at 850 for 10 minutes. At room temperature, PC spectra showed two peaks at 3.31 and 3.15 eV associated with acceptor levels formed at 300 and 142 meV above valence band in as grown samples. But, after the thermal annealing, PC spectra exhibited various additional peaks depending on the Mg concentration. In the GaN samples with Mg concentration around 6 7 1017 cm−3, we have observed PC peaks related to Mg at 3.31 as well as 3.02 eV and carbon acceptor at 3.17 eV. For moderately Mg doped GaN samples, i.e., the hole concentration p=3 4 1017 cm−3, additional peak was observed at around 0.9 eV which can be attributed to defects related to Ga vacancy. For relatively low Mg doped samples whose hole concentrations are 1 2 1017 cm−3, additional broad peak was observed at around 1.3 eV. This peak may be related to the yellow band luminescence. As the Mg concentration is increased, the concentration of Ga vacancies can be reduced because Mg occupies the substitutional site of Ga in GaN lattice. When the hole concentration is above 6 7 1017 cm−3, the yellow luminescence and Ga vacancy related peaks disappeared completely.

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