History of HgTe-based photodetectors in Poland

2010 ◽  
Vol 18 (3) ◽  
Author(s):  
A. Rogalski
Keyword(s):  
High Performance ◽  
Flicker Noise ◽  
Vapour Phase ◽  
Fast Response ◽  
Thick Wall ◽  
Vapour Phase Epitaxy ◽  
Stage Of Development ◽  
In Series ◽  
Multiple Cell ◽  
And Performance

AbstractIn Poland, the HgCdTe studies began in 1960 at the Institute of Physics, Warsaw University. The material processing laboratory was created by Giriat and later by Dziuba, Gałązka, and others. Bridgman technique with sealed thick wall quartz ampoules was used to grow material suitable for research and experimental devices. Among the first papers published in 1961 and 1963 there were the Polish works devoted to preparation, doping, and electrical properties of HgCdTe.Infrared detector’s research and development efforts in Poland were concentrated mostly on uncooled market niche. At the beginning, a modified isothermal vapour phase epitaxy has been used for research and commercial fabrication of photoconductive, photoelectromagnetic and other HgCdTe devices. Bulk growth and liquid phase epitaxy were also used. Recently, the fabrication of infrared devices relies on low temperature epitaxial technique, namely metalorganic vapour phase deposition.At present stage of development, the photoconductive and photoelectromagnetic (PEM) detectors are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, photodiodes offer high performance and very fast response. However, conventional photovoltaic uncooled detectors suffer from low quantum efficiency and very low junction resistance. The problems have been solved with advanced band gap engineered architecture, multiple cell heterojunction devices connected in series, and monolithic integration of the detectors with microoptics.In final part of the paper, the Polish achievements in technology and performance of HgMnTe and HgZnTe photodetectors are presented.

Uncooled infrared photodetectors in Poland

2006 ◽  
Vol 14 (1) ◽  
Author(s):  
J. Piotrowski ◽  
A. Piotrowski
Keyword(s):  
Band Gap ◽  
High Performance ◽  
Flicker Noise ◽  
Vapour Phase ◽  
Fast Response ◽  
Infrared Photodetectors ◽  
Vapour Phase Epitaxy ◽  
Practical Applications ◽  
Long Wavelength ◽  
In Series

AbstractThe history and present status of the middle and long wavelength Hg1-xCdxTe infrared detectors in Poland are reviewed. Research and development efforts in Poland were concentrated mostly on uncooled market niche.Technology of the infrared photodetectors has been developed by several research groups. The devices are based on mercury-based variable band gap semiconductor alloys. Modified isothermal vapour phase epitaxy (ISOVPE) has been used for many years for research and commercial fabrication of photoconductive, photoelectromagnetic and other devices. Bulk growth and liquid phase epitaxy was also used. At present, the fabrication of IR devices relies on low temperature epitaxial technique, namely metalorganic vapour phase deposition (MOCVD), frequently in combination with the ISOVPE.Photoconductive and photoelectromagnetic detectors are still in production. The devices are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, the PV devices could offer high performance and very fast response. At present, the uncooled long wavelength devices of conventional design suffer from two issues; namely low quantum efficiency and very low junction resistance. It makes them useless for practical applications. The problems have been solved with advanced 3D band gap engineered architecture, multiple cell heterojunction devices connected in series, monolithic integration of the detectors with microoptics and other improvements. Present fabrication program includes devices which are optimized for operation at any wavelength within a wide spectral range 1–15 μm and 200–300 K temperature range. Special solutions have been applied to improve speed of response. Some devices show picoseconds range response time. The devices have found numerous civilian and military applications.

scholarly journals AP-MOVPE Technology and Characterization of InGaAsN p-i-n Subcell for InGaAsN/GaAs Tandem Solar Cell

2014 ◽  
Vol 60 (2) ◽  
pp. 151-156 ◽  
Author(s):  
Wojciech Dawidowski ◽  
Beata Šciana ◽  
Iwona Zborowska-Lindert ◽  
Miroslav Mikolášek ◽  
Magdalena Latkowska ◽  
...  
Keyword(s):  
Solar Cell ◽  
Vapour Phase ◽  
Tandem Solar Cell ◽  
Vapour Phase Epitaxy ◽  
Current Voltage ◽  
Multijunction Solar Cells ◽  
Semiconductor Compounds ◽  
In Series ◽  
Metal Organic ◽  
Organic Vapour

Abstract Tandem (two p-n junctions connected by tunnel junction) and multijunction solar cells (MJSCs) based on AIIIBV semiconductor compounds and alloys are the most effective photovoltaic devices. Record efficiency of the MJSCs exceeds 44% under concentrated sunlight. Individual subcells connected in series by tunnel junctions are crucial components of these devices. In this paper we present atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE) of InGaAsN based subcell for InGaAsN/GaAs tandem solar cell. The parameters of epitaxial structure (optical and electrical), fabrication process of the test solar cell devices and current-voltage (J-V) characteristics are presented and discussed.

Novel Growth Techniques for the Fabrication of Photonic Integrated Circuits

1991 ◽  
Vol 240 ◽  
Author(s):  
G. Coudenys ◽  
G. Vermeire ◽  
Y. Zhu ◽  
I. Moerman ◽  
L. Buydens ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Photonic Integrated Circuits ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Integration Schemes ◽  
Recent Developments ◽  
Laser Waveguide ◽  
Special Growth ◽  
And Performance ◽  
Balanced Photodetector

INTRODUCTION:The fabrication of Photonic Integrated Circuits (PIC) requires the development of advanced growth and processing techniques. One of the major problems in the fabrication of PICs is the monolithic integration of passive and active waveguiding structures with a different bandgap. This is schematically shown in figure 1 where a laser, waveguide and detector are integrated on the same substrate. The following relationship between the different bandgaps is required : Eg (detector) < Eg (laser) < Eg (waveguide). One of the most advanced PICs is certainly a coherent receiver chip where a local DFB laser oscillator is integrated with a Y-junction, 3-dB splitter and balanced photodetector pair [1,2,3]. Current integration schemes are mostly based on the use of different epitaxial growth steps to obtain the different bandgap materials on the same substrate. In order to improve yield and performance it is required to reduce the number of growth steps by using special growth techniques. In this paper we will briefly describe some of the recent developments in advanced growth techniques. A more detailed description will be given of our recent work based on selective growth and shadow masked growth using Metal Organic Vapour Phase Epitaxy (MOVPE).

scholarly journals Recent Development of Nanocomposite Membranes for Vanadium Redox Flow Batteries

2015 ◽  
Vol 2015 ◽  
pp. 1-12 ◽  
Author(s):  
Sang-Ho Cha
Keyword(s):  
High Performance ◽  
Large Scale ◽  
Electrolyte Solutions ◽  
Fast Response ◽  
Vanadium Redox Flow Battery ◽  
Nanocomposite Membranes ◽  
Long Cycle Life ◽  
And Performance ◽  
Exchange Membrane ◽  
Vanadium Redox

The vanadium redox flow battery (VRB) has received considerable attention due to its long cycle life, flexible design, fast response time, deep-discharge capability, and low pollution emissions in large-scale energy storage. The key component of VRB is an ion exchange membrane that prevents cross mixing of the positive and negative electrolytes by separating two electrolyte solutions, while allowing the conduction of ions. This review summarizes efforts in developing nanocomposite membranes with reduced vanadium ion permeability and improved proton conductivity in order to achieve high performance and long life of VRB systems. Moreover, functionalized nanocomposite membranes will be reviewed for the development of next-generation materials to further improve the performance of VRB, focusing on their properties and performance of VRB.

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

Trace nanoanalysis

1994 ◽  
Vol 52 ◽  
pp. 940-941
Author(s):  
D. E. Newbury ◽  
R. D. Leapman
Keyword(s):  
High Performance ◽  
Secondary Ion Mass Spectrometry ◽  
Detection Efficiency ◽  
Volume Element ◽  
And Performance ◽  
Trace Constituents ◽  
Secondary Ion ◽  
Concentration Levels ◽  
Structure Properties

Trace constituents, which can be very loosely defined as those present at concentration levels below 1 percent, often exert influence on structure, properties, and performance far greater than what might be estimated from their proportion alone. Defining the role of trace constituents in the microstructure, or indeed even determining their location, makes great demands on the available array of microanalytical tools. These demands become increasingly more challenging as the dimensions of the volume element to be probed become smaller. For example, a cubic volume element of silicon with an edge dimension of 1 micrometer contains approximately 5×1010 atoms. High performance secondary ion mass spectrometry (SIMS) can be used to measure trace constituents to levels of hundreds of parts per billion from such a volume element (e. g., detection of at least 100 atoms to give 10% reproducibility with an overall detection efficiency of 1%, considering ionization, transmission, and counting).

https://imsciences.edu.pk/files/journals/vol12_2/New%201%20MA.864.pdf

2020 ◽  
Vol 12 (2) ◽  
pp. 19-50 ◽  
Author(s):  
Muhammad Siddique ◽  
Shandana Shoaib ◽  
Zahoor Jan
Keyword(s):  
Organizational Performance ◽  
Structural Equation ◽  
High Performance ◽  
Service Sector ◽  
Performance Outcomes ◽  
Theory And Practice ◽  
Relational Coordination ◽  
Multiple Sources ◽  
And Performance ◽  
High Level

A key aspect of work processes in service sector firms is the interconnection between tasks and performance. Relational coordination can play an important role in addressing the issues of coordinating organizational activities due to high level of interdependence complexity in service sector firms. Research has primarily supported the aspect that well devised high performance work systems (HPWS) can intensify organizational performance. There is a growing debate, however, with regard to understanding the “mechanism” linking HPWS and performance outcomes. Using relational coordination theory, this study examines a model that examine the effects of subsets of HPWS, such as motivation, skills and opportunity enhancing HR practices on relational coordination among employees working in reciprocal interdependent job settings. Data were gathered from multiple sources including managers and employees at individual, functional and unit levels to know their understanding in relation to HPWS and relational coordination (RC) in 218 bank branches in Pakistan. Data analysis via structural equation modelling, results suggest that HPWS predicted RC among officers at the unit level. The findings of the study have contributions to both, theory and practice.

scholarly journals Study on strong spinning preparation method and mechanism of the industrial pure titanium ultrafine crystallization

2019 ◽  
Vol 14 ◽  
pp. 155892501989525
Author(s):  
Yu Yang ◽  
Yanyan Jia
Keyword(s):  
Heat Treatment ◽  
High Performance ◽  
Pure Titanium ◽  
Grain Structure ◽  
Theoretical Research ◽  
Ultrafine Grain ◽  
Forming Process ◽  
Spinning Process ◽  
And Performance ◽  
Material Utilization

Ultrafine crystallization of industrial pure titanium allowed for higher tensile strength, corrosion resistance, and thermal stability and is therefore widely used in medical instrumentation, aerospace, and passenger vehicle manufacturing. However, the ultrafine crystallizing batch preparation of tubular industrial pure titanium is limited by the development of the spinning process and has remained at the theoretical research stage. In this article, the tubular TA2 industrial pure titanium was taken as the research object, and the ultrafine crystal forming process based on “5-pass strong spin-heat treatment-3 pass-spreading-heat treatment” was proposed. Based on the spinning process test, the ultimate thinning rate of the method is explored and the evolution of the surface microstructure was analyzed by metallographic microscope. The research suggests that the multi-pass, medium–small, and thinning amount of spinning causes the grain structure to be elongated in the axial and tangential directions, and then refined, and the axial fiber uniformity is improved. The research results have certain scientific significance for reducing the consumption of high-performance metals improving material utilization and performance, which also promote the development of ultrafine-grain metals’ preparation technology.

scholarly journals Dual-Cation Electrolytes Crosslinked with MXene for High-Performance Electrochromic Devices

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 874
Author(s):  
Soyoung Bae ◽  
Youngno Kim ◽  
Jeong Min Kim ◽  
Jung Hyun Kim
Keyword(s):  
Ionic Conductivity ◽  
Response Time ◽  
Indium Tin Oxide ◽  
High Performance ◽  
Fast Response ◽  
High Ionic Conductivity ◽  
Electrochromic Device ◽  
Fast Response Time ◽  
Coloration Efficiency ◽  
Conduction Pathway

MXene, a 2D material, is used as a filler to manufacture polymer electrolytes with high ionic conductivity because of its unique sheet shape, large specific surface area and high aspect ratio. Because MXene has numerous -OH groups on its surface, it can cause dehydration and condensation reactions with poly(4-styrenesulfonic acid) (PSSA) and consequently create pathways for the conduction of cations. The movement of Grotthuss-type hydrogen ions along the cation-conduction pathway is promoted and a high ionic conductivity can be obtained. In addition, when electrolytes composed of a conventional acid or metal salt alone is applied to an electrochromic device (ECD), it does not bring out fast response time, high coloration efficiency and transmittance contrast simultaneously. Therefore, dual-cation electrolytes are designed for high-performance ECDs. Bis(trifluoromethylsulfonyl)amine lithium salt (LiTFSI) was used as a source of lithium ions and PSSA crosslinked with MXene was used as a source of protons. Dual-Cation electrolytes crosslinked with MXene was applied to an indium tin oxide-free, all-solution-processable ECD. The effect of applying the electrolyte to the device was verified in terms of response time, coloration efficiency and transmittance contrast. The ECD with a size of 5 × 5 cm2 showed a high transmittance contrast of 66.7%, fast response time (8 s/15 s) and high coloration efficiency of 340.6 cm2/C.

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