Systematic Determination of The Ultrastructure of Local Faba Bean (Vicia faba L.) Seeds Using Light and Scanning Electron Microscopes

The present study was conducted to determine the seed morphologies and macromorphological characteristics of fifteen local faba bean (Vicia faba L.) genotypes collected from different region of Northern Cyprus. The characteristics in the seeds were evaluated using a light microscope (LM) and scanning electron microscope (SEM). SEM pictures were taken of the whole seed and its details. The scope of the research was examined comparatively using LM and SEM, and the seed shapes, surface ornamentation, and quantitative measurements were determined. Different characteristics for seed size and surface were found among the local faba beans accessions. Seed dimensions were between 12.44 and 24.26 mm long and between 9.49 and 17.45 mm wide, colors ranged from yellowish-brown to dark brown, and ornamentation of the seed coat varied. The local faba bean seeds were of subprolate and prolate types. We believe that using this technique to determine the differences among the seeds of different genotypes may play a role in helping to create different programs that can choose specific genotypes to improve cultivars based on the seed characteristics.

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Quantitative genetic studies of yield, yield components, and phenological and agronomic characters in spring faba bean

Genome ◽

10.1139/g87-029 ◽

1987 ◽

Vol 29 (1) ◽

pp. 169-173 ◽

Cited By ~ 4

Author(s):

H. M. Kao ◽

P. B. E. McVetty

Keyword(s):

Vicia Faba ◽

Faba Bean ◽

Yield Components ◽

Harvest Index ◽

Dry Matter ◽

Diallel Analysis ◽

Diallel Cross ◽

Agronomic Characters ◽

Vicia Faba L ◽

Faba Beans

Hayman's diallel cross analysis was employed to investigate the nature of the genetic control and heritability of yield, yield components, and phenological and agronomic characters in F1 and F2 generations of spring faba beans (Vicia faba L.). High-yielding S4 inbred lines from five open-pollinated faba bean cultivars were used as parents to generate complete F1 and F2 diallels. The S5 inbred line parents and the 20 cross combinations were planted in randomized complete block experiments with six replications. All characters in the F1 diallel and in the F2 diallel with the exception of days from planting to maturity met all of the assumptions required for Hayman's diallel analysis. Yield, total dry matter, harvest index, and pods per plant exhibited significant apparent overdominance in both the F1 and F2 diallels. It is concluded that substantial immediate increases in yield and total dry matter could be expected from exploiting the apparent overdominant gene action found for these characters in these crosses via F1 hybrids or synthetics. Key words: total dry matter, harvest index, diallel crosses, inheritance, Vicia faba L.

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Screening of Faba Bean (Vicia faba L.) Germplasm Accessions against Grey Mould Disease Caused by Botrytis fabae Sard

Agricultural Science Digest - A Research Journal ◽

10.18805/ag.d-265 ◽

2020 ◽

Author(s):

Ibrahim Elkhalil Benzohra ◽

Hakima Belaidi

Keyword(s):

Vicia Faba ◽

Faba Bean ◽

Grey Mould ◽

Grain Legume ◽

Sources Of Resistance ◽

Significant Difference ◽

Botrytis Fabae ◽

Vicia Faba L ◽

Faba Beans ◽

Chocolate Spot Disease

Background: Faba bean (Vicia faba L.) is thirst most important grain legume in the world and the first one in Algeria. The chocolate spot disease caused by Botrytis fabae Sard (BF), is the major constraint of this culture in Algeria when caused a destructive damages.Methods: The aim of this study is to find the sources of resistance for Seven varieties of faba beans (Giza 02, Giza 40, Giza 461, Sakha 02, Sakha 03, Precoce de Seville), by using the detached leaflet inoculation test for resistance to the two isolates from BF represent two different regions of northwest Algeria (Mascara and Relizane). Result: A significant difference (P less than 0.05) was observed in the reaction of the varieties which manifest themselves by a different reaction vis-à-vis the isolates of BF. Total sensitivity was observed in the four (4) varieties Giza02, Sakha01, Sakha02 and Sakha03, two (2) varieties (Giza40 and Ziban), are tolerant, while the variety named ‘Precoce de Seville’ showed significant resistance to both isolates from BF. These results showed a similar pathogenic behavior of two isolates of BF and variability in the level of reactions of the varieties of beans. The variety ‘Precoce de Seville’ showed promising results to be valued and cultivated in order to reduce the damage caused by this disease and reduce the use of chemicals.

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FABA BEAN: LOW RESISTANCE TO PEA APHIDS, ACYRTHOSIPHON PISUM (HOMOPTERA: APHIDIDAE), IN ELEVEN CULTIVARS

Canadian Journal of Plant Science ◽

10.4141/cjps76-074 ◽

1976 ◽

Vol 56 (3) ◽

pp. 451-453 ◽

Cited By ~ 4

Author(s):

B. D. FRAZER ◽

D. RAWORTH ◽

T. GOSSARD

Keyword(s):

Vicia Faba ◽

Faba Bean ◽

Acyrthosiphon Pisum ◽

Broad Bean ◽

Developmental Rate ◽

Low Resistance ◽

Pea Aphids ◽

Vicia Faba L ◽

Faba Beans

Eleven cultivars of faba beans and one of broad bean (Vicia faba L.) were bioassayed for resistance to pea aphids (Acyrthosiphon pisum (Harris)) by determining the fecundity, survival and developmental rate of the aphid on each cultivar. None of the cultivars tested, including the three licensed for production in Canada, possess any significant resistance, although they differ in susceptibility.

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RAW AND AUTOCLAVED FABA BEANS IN CHICK DIETS

Canadian Journal of Animal Science ◽

10.4141/cjas73-117 ◽

1973 ◽

Vol 53 (4) ◽

pp. 741-746 ◽

Cited By ~ 20

Author(s):

R. R. MARQUARDT ◽

L. D. CAMPBELL

Keyword(s):

Heat Treatment ◽

Weight Gain ◽

Vicia Faba ◽

Faba Bean ◽

Crude Protein ◽

Growth Response ◽

Feed Utilization ◽

Antinutritional Factor ◽

Vicia Faba L ◽

Faba Beans

Two experiments were conducted with male Leghorn chicks over 20- and 21-day periods to study the influence of heat treatment (autoclaved 15 min at 121 C) on the antinutritional factor(s) of the faba bean (Vicia faba L. var. minor). Pancreas size decreased and efficiency of feed utilization was improved in chicks fed diets containing heated as compared with raw faba beans (P < 0.01). The most pronounced effect of heat treatment occurred in diets of high (85%) faba bean content. The decreases in pancreas size and feed:gain ratio were 25 and 12%, respectively. Heat treatment resulted in a significant (P < 0.01) growth response (7.3%) in chicks fed the diet containing 85% faba beans. Weight gain in chicks, however, was not significantly (P > 0.05) affected with diets containing 57 or 28% faba beans and was the same as for chicks fed the 85% heated faba bean diet. The results of the second experiment showed that most of the antinutritional factor(s) in faba beans is associated with the hulless portion of the faba bean. It was also shown that the weight of the hull was approximately 13% of that of the whole bean and that it had a high (45%) content of crude fiber and a low (6%) content of crude protein.

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Honeybees (Apis mellifera L.) increase yields of faba beans (Vicia faba L.) in New South Wales while maintaining adequate protein requirements from faba bean pollen

Australian Journal of Experimental Agriculture ◽

10.1071/ea99023 ◽

1999 ◽

Vol 39 (8) ◽

pp. 1001 ◽

Cited By ~ 5

Author(s):

D. C. Somerville

Keyword(s):

Apis Mellifera ◽

Vicia Faba ◽

Faba Bean ◽

Honey Bees ◽

New South ◽

Protein Requirements ◽

South Wales ◽

Vicia Faba L ◽

Faba Beans ◽

The Impact

Summary. A trial was conducted to measure the impact of honeybees (Apis mellifera L.) on faba bean (Vicia faba L.) yields and to determine the value of the crop to honeybees. The seed yield in cages with bees was 25% higher than in those without bees. The pollen harvested by honey bees from the faba beans met their nutritional requirements for protein and amino acids but there was no detectable nectar crop gathered from the faba beans. Thus, there seems to be a strong case for using managed honey bees to improve pollination and hence yields of Australian faba beans where feral bee populations maybe insufficient.

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PRELIMINARY ASSESSMENT OF SMALL FABA BEANS GROWN IN MANITOBA

Canadian Journal of Plant Science ◽

10.4141/cjps75-012 ◽

1975 ◽

Vol 55 (1) ◽

pp. 89-93 ◽

Cited By ~ 6

Author(s):

E. CANDLISH ◽

K. W. CLARK

Keyword(s):

Nitrogen Content ◽

Vicia Faba ◽

Total Nitrogen ◽

Faba Bean ◽

Ethylene Production ◽

Nitrogenase Activity ◽

Preliminary Assessment ◽

Plant Nitrogen ◽

Vicia Faba L ◽

Faba Beans

The growth, nitrogen content and nitrogenase activity of Diana and Ackerperle cultivars of faba beans (Vicia faba L. var. minor) were studied in the greenhouse and field. All inoculated seeds produced well nodulated plants. The total nitrogen fixed was 840 mg/plant in the second greenhouse experiment. The faba bean continued to fix nitrogen after pod formation. Application of nitrogen suppressed nitrogenase activity. Where no inoculum was applied to farmers’ fields in Manitoba, nodulation of faba beans was spotty, plant nitrogen was lower, and ethylene production was less than with plants from fields where inoculum was applied.

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Current State of Biological High-Resolution Scanning Electron Microscopy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100102985 ◽

1988 ◽

Vol 46 ◽

pp. 180-181 ◽

Cited By ~ 1

Author(s):

Klaus-Ruediger Peters

Keyword(s):

High Performance ◽

Low Voltage ◽

Backscattered Electrons ◽

Lens Position ◽

Low Voltage Operation ◽

Signal Collection ◽

Probe Size ◽

Electron Microscopes ◽

Scanning Electron Microscopes ◽

Scanning Electron

A new generation of high performance field emission scanning electron microscopes (FSEM) is now commercially available (JEOL 890, Hitachi S 900, ISI OS 130-F) characterized by an "in lens" position of the specimen where probe diameters are reduced and signal collection improved. Additionally, low voltage operation is extended to 1 kV. Compared to the first generation of FSEM (JE0L JSM 30, Hitachi S 800), which utilized a specimen position below the final lens, specimen size had to be reduced but useful magnification could be impressively increased in both low (1-4 kV) and high (5-40 kV) voltage operation, i.e. from 50,000 to 200,000 and 250,000 to 1,000,000 x respectively.At high accelerating voltage and magnification, contrasts on biological specimens are well characterized1 and are produced by the entering probe electrons in the outmost surface layer within -vl nm depth. Backscattered electrons produce only a background signal. Under these conditions (FIG. 1) image quality is similar to conventional TEM (FIG. 2) and only limited at magnifications >1,000,000 x by probe size (0.5 nm) or non-localization effects (%0.5 nm).

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Observation of GaAs/AlAs Superlattice Structures in both Secondary and Backscattcred Electron Imaging Modes with an Ultrahigh Resolution Scanning Electron Microscope

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010018077x ◽

1990 ◽

Vol 48 (1) ◽

pp. 404-405

Author(s):

K. Ogura ◽

A. Ono ◽

S. Franchi ◽

P.G. Merli ◽

A. Migliori

Keyword(s):

Gaas Layer ◽

Objective Lens ◽

Superlattice Structure ◽

Backscattered Electron ◽

Instrumental Resolution ◽

Electron Microscopes ◽

Superlattice Structures ◽

Electron Imaging ◽

Scanning Electron Microscopes ◽

Scanning Electron

In the last few years the development of Scanning Electron Microscopes (SEM), equipped with a Field Emission Gun (FEG) and using in-lens specimen position, has allowed a significant improvement of the instrumental resolution . This is a result of the fine and bright probe provided by the FEG and by the reduced aberration coefficients of the strongly excited objective lens. The smaller specimen size required by in-lens instruments (about 1 cm, in comparison to 15 or 20 cm of a conventional SEM) doesn’t represent a serious limitation in the evaluation of semiconductor process techniques, where the demand of high resolution is continuosly increasing. In this field one of the more interesting applications, already described (1), is the observation of superlattice structures.In this note we report a comparison between secondary electron (SE) and backscattered electron (BSE) images of a GaAs / AlAs superlattice structure, whose cross section is reported in fig. 1. The structure consist of a 3 nm GaAs layer and 10 pairs of 7 nm GaAs / 15 nm AlAs layers grown on GaAs substrate. Fig. 2, 3 and 4 are SE images of this structure made with a JEOL JSM 890 SEM operating at an accelerating voltage of 3, 15 and 25 kV respectively. Fig. 5 is a 25 kV BSE image of the same specimen. It can be noticed that the 3nm layer is always visible and that the 3 kV SE image, in spite of the poorer resolution, shows the same contrast of the BSE image. In the SE mode, an increase of the accelerating voltage produces a contrast inversion. On the contrary, when observed with BSE, the layers of GaAs are always brighter than the AlAs ones , independently of the beam energy.

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