Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers

Nanoscale ◽  
2017 ◽  
Vol 9 (32) ◽  
pp. 11504-11510 ◽  
Author(s):  
Dezhong Cao ◽  
Hongdi Xiao ◽  
Qingxue Gao ◽  
Xiaokun Yang ◽  
Caina Luan ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Quartz Substrate ◽  
Photoelectrochemical Properties ◽  
Si Substrate ◽  
Photoelectrochemical Performance ◽  
Si Substrates

The mesoporous GaN-based thin films were transferred onto quartz and n-Si substrates. Compared to the film on quartz substrate, the film on n-Si substrate exhibited better photoelectrochemical performance.

scholarly journals Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Integrated Circuits ◽  
Film Thickness ◽  
Depth Range ◽  
Micro Electro Mechanical Systems ◽  
Si Substrates ◽  
Sio2 Thin Film ◽  
Average Grain Size

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

Interfacial adhesion of nanoporous zeolite thin films

2006 ◽  
Vol 21 (2) ◽  
pp. 505-511 ◽  
Author(s):  
Lili Hu ◽  
Junlan Wang ◽  
Zijian Li ◽  
Shuang Li ◽  
Yushan Yan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Interfacial Adhesion ◽  
Interfacial Strength ◽  
Future Generation ◽  
In Situ Growth ◽  
Seeded Growth ◽  
Si Substrates ◽  
Film Substrate

Nanoporous silica zeolite thin films are promising candidates for future generation low-dielectric constant (low-k) materials. During the integration with metal interconnects, residual stresses resulting from the packaging processes may cause the low-k thin films to fracture or delaminate from the substrates. To achieve high-quality low-k zeolite thin films, it is important to carefully evaluate their adhesion performance. In this paper, a previously reported laser spallation technique is modified to investigate the interfacial adhesion of zeolite thin film-Si substrate interfaces fabricated using three different methods: spin-on, seeded growth, and in situ growth. The experimental results reported here show that seeded growth generates films with the highest measured adhesion strength (801 ± 68 MPa), followed by the in situ growth (324 ± 17 MPa), then by the spin-on (111 ± 29 MPa). The influence of the deposition method on film–substrate adhesion is discussed. This is the first time that the interfacial strength of zeolite thin films-Si substrates has been quantitatively evaluated. This paper is of great significance for the future applications of low-k zeolite thin film materials.

PREPARATION AND FERROELECTRIC PROPERTY OF (100)-ORIENTED Ca0.4Sr0.6Bi4Ti4O15 THIN FILM ON Pt/Ti/SiO2/Si SUBSTRATE

2010 ◽  
Vol 17 (05n06) ◽  
pp. 445-449 ◽  
Author(s):  
SUHUA FAN ◽  
QUANDE CHE ◽  
FENGQING ZHANG
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Property ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Xrd Analysis ◽  
Sem Analysis ◽  
Si Substrate ◽  
Degree Of Orientation ◽  
Equiaxed Grains

The (100)-oriented Ca0.4Sr0.6Bi4Ti4O15(C0.4S0.6BTi ) thin film was successfully prepared by a sol-gel method on Pt/Ti/SiO2/Si substrate. The orientation and formation of thin films under different annealing schedules were studied using XRD and SEM. XRD analysis indicated that (100)-oriented C0.4S0.6BTi thin film with degree of orientation of I(200)/I(119) = 1.60 was prepared by preannealing the film at 400°C for 3 min followed by rapid thermal annealing at 800°C for 5 min. SEM analysis further indicated that the (100)-oriented C0.4S0.6BTi thin film with a thickness of about 800 nm was mainly composed of equiaxed grains. The remanent polarization and coercive field of the film were 16.1 μC/cm2 and 85 kV/cm, respectively.

High-Resolution Quadrature Photopyroelectric Spectroscopy of a-Si:H Thin Films Deposited on Silicon Wafers

1995 ◽  
Vol 49 (6) ◽  
pp. 819-824 ◽  
Author(s):  
Jun Shen ◽  
Andreas Mandelis ◽  
Andreas Othonos ◽  
Joseph Vanniasinkam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Wave ◽  
Incident Radiation ◽  
Surface Films ◽  
Si Substrates ◽  
Wafer Substrate ◽  
Ir Transmission ◽  
Ft Ir ◽  
Lock In

The recently developed photothermal technique of quadrature photopyroelectric spectroscopy (Q-PPES) has been applied to measurements of amorphous Si thin films deposited on crystalline Si substrates. Direct, meaningful comparisons have been made between purely optical transmission in-phase (IP-PPES) spectra, and purely thermal-wave sub-gap spectra with the use of a novel noncontacting PPES instrument to record lock-in in-phase and quadrature spectra, respectively. FT-IR transmission spectra have also been obtained for a comparison with this IP-PPES optical method. The results of the present work showed that the FT-IR method performs the worst in terms of spectral resolution of thin films and sub-bandgap defect/impurity absorptions inherent in the Si wafer substrate. The optical IP-PPES channel, however, albeit more sensitive than the FT-IR technique, fails to resolve spectra from surface films thinner than 2100 Å, but is sensitive to sub-bandgap absorptions. The thermal-wave Q-PPES channel is capable of resolving thin-film spectra well below 500 Å thick and exhibits strong signal levels from the crystalline Si sub-bandgap absorptions. Depending on the surface thin-film orientation toward, or away from, the direction of the incident radiation, the estimated minimum mean film thickness resolvable spectroscopically by Q-PPES is either 40 Å or 100 Å, respectively.

Pulsed Laser Deposited Oxide Green Emitting Thin Film Phosphors : Optimization of Growth Conditions

2006 ◽  
Vol 988 ◽  
Author(s):  
P. Thiyagarajan ◽  
M. Kottaismay ◽  
M S Ramachandra Rao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Diffuse Reflectance Spectroscopy ◽  
Quartz Substrate ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Ex Situ ◽  
Morphological Studies

AbstractStructural and photoluminescence (PL) properties of Zn2(1-x)MnxSiO4 (1 ≤ x ≤ 5) and diffuse reflectance spectroscopy (DRS) and morphological studies of ZnGa2O4:Mn thin film green emitting phosphors grown using pulsed laser deposition (PLD) technique have been investigated. Zn2(1-x)MnxSiO4 thin films grown on Si substrate at 700°C in 300 mTorr of oxygen partial pressure, upon ex-situ annealing at higher temperatures exhibit superior PL intensity. ZnGa2O4:Mn phosphor thin films grown on quartz substrate at 650oC and in-situ annealed in 300mTorr of oxygen partial pressure show better emission intensity. For both Zn2SiO4:Mn and ZnGa2O4:Mn phosphors, luminescence can be assigned to 4T1 – 6A1 transition of Mn2+ within the 3d orbital giving rise to emission at 525 and 503 nm, respectively.

scholarly journals The Effect of Strontium Doping on LaFeO3 Thin Films Deposited by the PLD Method

Catalysts ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 954
Author(s):  
Anna Cyza ◽  
Łukasz Cieniek ◽  
Tomasz Moskalewicz ◽  
Wojciech Maziarz ◽  
Jan Kusiński ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Catalytic Properties ◽  
Pulsed Laser ◽  
Grain Morphology ◽  
Laser Deposition ◽  
Si Substrate ◽  
Tem Analysis ◽  
Small Grains

The aim of the presented investigations was to deposit the thin films La1−xSrxFeO3 (x = 0, 0.1, 0.2) on (100) Si substrate by using the Pulsed Laser Deposition (PLD) method. Structure was exanimated by using XRD, SEM, AFM, TEM and XPS methods. The catalytic properties were analyzed in 4 ppm acetone atmosphere. The doping of Sr thin films La1−xSrxFeO3 (x = 0, 0.1, 0.2) resulted in a decrease in the size of the crystallites, the volume of the elemental cell and change in the grain morphology. In the LaFeO3 and La0.9Sr0.1FeO3, clusters around which small grains grow are visible in the structure, while in the layer La0.8Sr0.2FeO3, the visible grains are elongated. The TEM analysis has shown that the obtained thin films had a thickness in the range 150–170 nm with triangular or flat column ends. The experiment performed in the presence of gases allowed us to conclude that the surfaces (101/020) in the triangle-shaped columns and the plane (121/200) faces in flat columns were exposed to gases. The best properties in the presence of CH3COCH3 gas were noted for LaFeO3 thin film with triangle columns ending with orientation (101/020).

Effects of Buffer Layer on the Fabrication and Characteristics of Ferroelectric Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
Han Wook Song ◽  
Joon Sung Lee ◽  
Dae-Weon Kim ◽  
Kwang Ho Kim ◽  
Tae-Hyun Sung ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Buffer Layer ◽  
Sol Gel ◽  
Optimum Thickness ◽  
Si Substrate ◽  
Barrier Effects ◽  
Pzt Thin Film ◽  
Different Temperatures ◽  
Gel Technique

ABSTRACTMgO thin films were deposited on Si(100) substrate with different temperatures from 500 °C to 800 °C and different e-beam powers from 25W to 100W using e-beam evaporation method. Pb(Zr0.53Ti0.47)O3(PZT) thin films were deposited on MgO/Si(100) substrates with different drying temperatures from 190 °C to 310 °C using sol-gel technique. If there were no buffer layer between the PZT thin film and Si substrate, the peaks corresponding to perovskite PZT phase were not observed. However the buffer layer were inserted between the PZT thin film and Si substrate, it was possible to fabricate perovskite PZT phase. The barrier effects of MgO thin film to the interdiffusion of Pb were investigated by AES study. Optimum thickness of MgO at which PZT/MgO/Si structure shows P-E hysteresis was calculated, and the hysteresis was tested for PZT/MgO/Si structures with different MgO thicknesses.

scholarly journals The Effect of Oxygen Mixing Percentage on Structural, Optical and Electrical Properties of ZnTiO3 Thin-films Grown by Rf Magnetron Sputtering.

2021 ◽  
Author(s):  
srinivasa varaprsad H ◽  
sridevi P. V ◽  
Satya Anuradha M ◽  
Srinivas Pattipaka ◽  
pamu D
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Magnetron Sputtering ◽  
Thermionic Emission ◽  
Rf Magnetron Sputtering ◽  
Si Substrates ◽  
Atomic Force ◽  
Excitation Coefficient ◽  
Effect Of Oxygen

Abstract Perovskites are important composites in the area of multidisciplinary applications. It is achieved by carefully choosing and tuning the properties of the thin-film at the deposition. In this paper, ZnTiO3 (ZTO) thin-films were being deposited on quartz and N-Si substrates by RF magnetron sputtering. The thin-films were developed at room temperature, oxygen percentage levels varying from 0 to 100, and annealed at 600oC. The electrical, optical, morphological, and structural properties were analyzed as a function of oxygen mixing percentage (OMP). The crystallinity of the cubic structured ZTO thin-film is found to be high at 25 OMP, and it is gradually decreased with increased OMP. The surface morphology of the thin-film is observed, and roughness is measured from the atomic force microscope. Raman Spectroscopy investigated the phase formation and the vibrational modes of the thin-film with their spectral de-convolution. The ZTO thin-films optical properties were investigated using transmittance spectra. The ZTO thin-film indicated the highest refractive index of 2.46, at 633nm with optical bandgap values of 3.57 eV, with a thickness of 145nm and 25 OMP. The refractive index, thin-film thickness, and excitation coefficient were analyzed using the Swanepoel envelope technique. Electrical characteristics of ZTO thin-film are measured from the optimized conditions of the thin-film with conventional thermionic emission (TE) technique.

scholarly journals Narrowband Spontaneous Emission Amplification from a Conjugated Oligomer Thin Film

Polymers ◽  
2020 ◽  
Vol 12 (1) ◽  
pp. 232
Author(s):  
Mohamad S. AlSalhi ◽  
Mamduh J. Aljaafreh ◽  
Saradh Prasad
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Absorption Spectrum ◽  
Spontaneous Emission ◽  
Spin Coating ◽  
Quartz Substrate ◽  
Pump Energy ◽  
Laser Induced Fluorescence ◽  
Time Resolved

In this paper, we studied the laser and optical properties of conjugated oligomer (CO) 1,4-bis(9-ethyl-3-carbazo-vinylene)-9,9-dihexyl-fluorene (BECV-DHF) thin films, which were cast onto a quartz substrate using a spin coating technique. BECV-DHF was dissolved in chloroform at different concentrations to produce thin films with various thicknesses. The obtained results from the absorption spectrum revealed one sharp peak at 403 nm and two broads at 375 and 428 nm. The photoluminescence (PL) spectra were recorded for different thin films made from different concentrations of the oligomer solution. The threshold, laser-induced fluorescence (LIF), and amplified spontaneous emission (ASE) properties of the CO BECV-DHF thin films were studied in detail. The ASE spectrum was achieved at approximately 482.5 nm at a suitable concentration and sufficient pump energy. The time-resolved spectroscopy of the BECV-DHF films was demonstrated at different pump energies.

Growth and Characterizations of Electrochemically Deposited ZnO Thin Films

2007 ◽  
Vol 124-126 ◽  
pp. 135-138 ◽  
Author(s):  
Yumeji Takashige ◽  
Takuya Nebiki ◽  
Tadashi Narusawa
Keyword(s):  
Thin Films ◽  
Bath Temperature ◽  
Zno Thin Films ◽  
Si Substrate ◽  
Cell Temperature ◽  
Cathodic Potential ◽  
Si Substrates ◽  
Similar Tendency ◽  
Electrochemical Deposition Method ◽  
Electrochemically Deposited

In this study,Wepresent ZnO thin films using electrochemical deposition method. ZnO thin films are deposited onto metal(Cu) and semiconductor (n-type Si) substrates. The electrolyte consists of a 0.1M Zn(NO3)2 solution, and we applied various potentials at different bath temperatures. XRD shows preferential orientation to (002) that increases with the applied cathodic potential and the bath temperature. Similar tendency is shown on both Cu and n-type Si substrates. SEM micrographs show ZnO surface morphology is greatly affected by the applied cathodic potentials. The RBS analysis reflects the rough morphology of ZnO thin film. The composition ratio Zn:O on n-type Si substrate is determined to be 1.0:1.3 ± 0.3 at the cathodic potential of -1.0[V] and the cell temperature of 70.

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