scholarly journals Evaluation of De-Embedding Methods for Impedance Characterization of Magnetic Nanoparticles

2021 ◽  
Vol 16 (1) ◽  
pp. 1-4
Author(s):  
Rafael Cortês De Medeiros ◽  
Marcos V. Puydinger dos Santos ◽  
Leandro Manera
Keyword(s):  
Data Storage ◽  
Electrical Characterization ◽  
Ferromagnetic Nanoparticles ◽  
Platinum Electrodes ◽  
Digital Information ◽  
Storage Devices ◽  
Technological Issue ◽  
Impedance Characterization ◽  
Embedding Methods

Data storage and memory access has been, over the years, a technological issue due to the big volume of digital information. High-frequency magneto-transport in ferromagnetic nanoparticles may be used to deal with nanoscale storage devices, which requires an adequate electrical and magnetic characterization in the frequency domain. In this work, we fabricate ferromagnetic nanoparticles on top of platinum electrodes using focused-electron-beam induced +deposition (FEBID) method. Electrical characterization was performed using a Vector Network Analyzer (VNA). After these measurements, three de-embedding methods were applied: Open De-Embedding (OPD), Open-Short De-Embedding (OSD) and the Thru-Short-Open De-Embedding (TSOD) methods. We could observe that Thru-Short-Open De-Embedding provides good accuracy for evaluating the scattering parameters and to compensate the electrodes (fixture) signal due to the high frequencies behavior of ferromagnetic nanoparticles. The results will be useful to characterize ferromagnetic nanodisks used in data storage devices.

Electrical characterization of functionalized platinum electrodes and ISFET sensors for metal ion detection

2006 ◽  
Vol 26 (1) ◽  
pp. 149-153 ◽  
Author(s):  
M. Ben Ali ◽  
T. Homri ◽  
Y. Korpan ◽  
A. Abdelgani ◽  
M. Ali Maaref ◽  
...  
Keyword(s):  
Metal Ion ◽  
Electrical Characterization ◽  
Platinum Electrodes ◽  
Ion Detection ◽  
Metal Ion Detection

Temperature-Dependent Electrical Characterization of Multiferroic BiFeO3 Thin Films

2010 ◽  
Vol 4 (1) ◽  
Author(s):  
D. Hitchen ◽  
S. Ghosh
Keyword(s):  
Thin Films ◽  
Bismuth Ferrite ◽  
Electrical Characterization ◽  
Deposition Process ◽  
Memory Storage ◽  
Storage Devices ◽  
Contact Points ◽  
Multiferroic Bifeo3 ◽  
Polarization Characteristics

The polarization hysteresis and current leakage characteristics of bismuth ferrite, BiFeO3 (BFO) thin films deposited by pulsed laser deposition was measured while varying the temperature from 80 - 300 K in increments of 10 K, to determine the feasibility of BFO for capacitive applications in memory storage devices. Data is compared to the performance of prototypic ferroelectric barium strontium titanate, BaxSr1-xTiO3 (BST) under similar conditions. Finding contacts on the BFO samples that exhibited acceptable dielectric properties was challenging; and once identified, the polarization characteristics between them varied greatly. However, the non-uniformity among the contact points within each sample suggests that either the samples were defective (by contamination or growth process), or that the deposition process of the contacts may have undermined the functionality of the devices. Subjected to increasing temperatures, BFO's polarization improved, and though its polarizability was shown to be inferior to BST, the dielectric loss was less.

Electrical Characterization of Nano Structured Energy Storage Devices

2019 ◽  
Vol 2 (8) ◽  
pp. 121-127
Author(s):  
Jaeheon Lee ◽  
Kenneth L. Bartley ◽  
Olgierd A. Palusinski
Keyword(s):  
Energy Storage ◽  
Electrical Characterization ◽  
Energy Storage Devices ◽  
Storage Devices

scholarly journals An automatic test environment for microelectronics education and research

2008 ◽  
Vol 6 (01) ◽  
Author(s):  
Federico Sandoval-Ibarra
Keyword(s):  
Experimental Data ◽  
Integrated Circuits ◽  
Data Storage ◽  
Graduate Program ◽  
Electrical Characterization ◽  
Mos Transistors ◽  
Automatic Test ◽  
Test Environment ◽  
Current Voltage

An automatic test environment (ATE) based on a PSoC has been developed to perform electrical characterization of integrated circuits (ICs). The ICs are designed for academic and research purposes as part of the Electronic Design graduate program at NVESTAV-Guadalajara Unit; these ICs are manufactured in standard N-well, 5-V, 1.5μm/0.5μm CMOS technologies. The ATE offers programmable capabilities to develop master-slave architectures, memory for data storage, functions generator to stimulate circuits and systems, current/voltage sources for several purposes, current-voltage measurements, and ports to download experimental data to a PC. To date, several ICs have been tested with the help of the ATE. In this paper, however, examples based on MOS Transistors only are presented in order to describe the ATE performance and also to show how experimental data of the devices under characterization were validated through SPICE simulations, experimental data given by manufacturers, and using commercial equipment as well.

Structural and Electrical Characterization of Shaped Beam Laser Recrystallized Polysilicon on Amorphous Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
T. J. Stultz ◽  
J. F. Gibbons
Keyword(s):  
Grain Size ◽  
Electrical Characterization ◽  
Grain Structure ◽  
Electrical Characteristics ◽  
Shaped Beam ◽  
Beam Laser ◽  
Cw Laser ◽  
Amorphous Substrates ◽  
Circular Beam

ABSTRACTStructural and electrical characterization of laser recrystallized LPCVD silicon films on amorphous substrates using a shaped cw laser beam have been performed. In comparing the results to data obtained using a circular beam, it was found that a significant increase in grain size can be achieved and that the surface morphology of the shaped beam recrystallized material was much smoother. It was also found that whereas circular beam recrystallized material has a random grain structure, shaped beam material is highly oriented with a <100> texture. Finally the electrical characteristics of the recrystallized film were very good when measured in directions parallel to the grain boundaries.

Vapor Deposition Polymerization and Electrical Characterization of TPD Thin Films

2011 ◽  
Vol E94-C (2) ◽  
pp. 157-163 ◽  
Author(s):  
Masakazu MUROYAMA ◽  
Ayako TAJIRI ◽  
Kyoko ICHIDA ◽  
Seiji YOKOKURA ◽  
Kuniaki TANAKA ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Electrical Characterization

Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

2009 ◽  
Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
J. Sudijono ◽  
P.K. Tan ◽  
H. Tan ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Nickel Silicide ◽  
Fault Isolation ◽  
Technology Nodes ◽  
Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

Case Studies in Atomic Force Probe Analysis

2006 ◽  
Author(s):  
Randal Mulder ◽  
Sam Subramanian ◽  
Tony Chrastecky
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Light Emission ◽  
Electrical Characterization ◽  
Logic Circuits ◽  
Contrast Imaging ◽  
Atomic Force ◽  
Measuring Surface ◽  
Analysis Environment

Abstract The use of atomic force probe (AFP) analysis in the analysis of semiconductor devices is expanding from its initial purpose of solely characterizing CMOS transistors at the contact level with a parametric analyzer. Other uses found for the AFP include the full electrical characterization of failing SRAM bit cells, current contrast imaging of SOI transistors, measuring surface roughness, the probing of metallization layers to measure leakages, and use with other tools, such as light emission, to quickly localize and identify defects in logic circuits. This paper presents several case studies in regards to these activities and their results. These case studies demonstrate the versatility of the AFP. The needs and demands of the failure analysis environment have quickly expanded its use. These expanded capabilities make the AFP more valuable for the failure analysis community.

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