scholarly journals Influence of substrates on the properties of cerium -doped CdO nanocrystalline thin films

2018 ◽  
Vol 16 (38) ◽  
pp. 112-123
Author(s):  
Abubaker S. Mohammed
Keyword(s):  
Thin Films ◽  
Glass Substrate ◽  
Spray Pyrolysis Technique ◽  
Xrd Analysis ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Cerium Content ◽  
Atomic Force ◽  
Cdo Films

Transparent thin films of CdO:Ce has been deposited on to glass and silicon substrates by spray pyrolysis technique for various concentrations of cerium (2, 4, and 6 Vol.%). CdO:Ce films were characterized using different techniques such as X-ray diffraction (XRD), atomic force microscopy(AFM) and optical properties. XRD analysis show that CdO films exhibit cubic crystal structure with (1 1 1) preferred orientation and the intensity of the peak increases with increasing's of Ce contain when deposited films on glass substrate, while for silicon substrate, the intensity of peaks decreases, the results reveal that the grain size of the prepared thin film is approximately (73.75-109.88) nm various with increased of cerium content. With a surface roughness of (0.871–16.2) nm as well as root mean square of (1.06-19.7) nm for glass substrate, while for silicon (84.79-107.48) nm, for a pure CdO and doped with Ce (2, 4, and 6 Vol.%). The 300-nm-thin CdO films showed that the optical energy band gap equal 2.6 eV, and increases with increasing doping until reaches a maximum value of 3.25 eV when doping levels 6 Vol.%.

Synthesis and Atomic Force Microscopy Contact Current Images of Aluminum Doped ZnO Thin Films

2010 ◽  
Vol 644 ◽  
pp. 109-112
Author(s):  
N. Muñoz Aguirre ◽  
J. Eduardo Rivera-López ◽  
L. Martínez Pérez ◽  
Pedro A. Tamayo Meza
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Spray Pyrolysis Technique ◽  
Water Mist ◽  
Zno Thin Films ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Doped Zno

Aluminum doped ZnO thin films were synthesized by the water-mist assisted spray pyrolysis technique. The structural characterization by means of X-Ray diffraction measurements is reported. By means of Atomic Force Microscopy, the superficial electrical characteristics of the thin films are studied. Specifically, contact current images are shown and discussed. It is important to emphasize that in spite of no voltage is applied to the Atomic Force Microscopy contact conductive tip, current images are getting.

scholarly journals Оптические и фотоэлектрические свойства тонких пленок GaS и гетероструктуры GaS/InSe

2019 ◽  
Vol 126 (5) ◽  
pp. 538
Author(s):  
А.Г. Гусейнов ◽  
В.М. Салманов ◽  
Р.М. Мамедов ◽  
А.А. Салманова ◽  
Ф.М. Ахмедова
Keyword(s):  
Thin Films ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Silar Method ◽  
X Ray ◽  
Force Microscopy ◽  
Photoelectric Properties ◽  
Atomic Force ◽  
Current Voltage ◽  
Luminescence Characteristics

AbstractGaS thin films have been grown by the SILAR method, their structures have been analyzed, and their optical and photoelectric properties have been investigated. The internal structure of the samples obtained have been studied using X-ray diffraction (XRD) analysis, atomic force microscopy (AFM), energy-dispersive X-ray (EDX) spectroscopy, and scanning electron microscopy (SEM). The GaS band gap has been determined from the absorption spectrum. p -GaS/ n -InSe heterojunctions have been formed on the basis of GaS crystals and InSe thin films. Current–voltage, optical, photoelectric, and luminescence characteristics of p -GaS/ n -InSe heterojunctions have been experimentally investigated.

Effect of Deposition Voltage on the Composition, Morphology and Optical Properties of ZnS Thin Films Prepared by Cathodic Electrodeposition

2010 ◽  
Vol 105-106 ◽  
pp. 348-350
Author(s):  
Hui Zhu ◽  
Jian Feng Huang ◽  
Li Yun Cao ◽  
Yan Wang ◽  
Xie Rong Zeng
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Xrd Analysis ◽  
Zinc Sulphide ◽  
X Ray Diffraction ◽  
Cathodic Electrodeposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Voltage

Zinc sulphide (ZnS) thin films were deposited on the indium tin oxide (ITO) substrates by a novel, simple cathodic electrodeposition method under atmospheric pressure. These thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence spectrum (PL) at room temperature. The effects of deposition voltage on the phase composition, morphology and photoluminescence behavior of the thin films were investigated. XRD analysis shows that the deposited thin films is highly preferential growth along (200) orientation. Both AFM and XRD analyses indicate that the surface of the ZnS thin films is composed of uniform grains of around 50 nm in diameter. With the increase in the deposition voltages, the crystallization of the obtained thin films improves and the grain size of the ZnS thin films increases. Photoluminescence emission peaks are observed at at 475~490 nm and 500 ~530 nm at room temperature for an excitation of 210 nm.

scholarly journals Surface and Optical Properties of Gd-Doped ZrO2 Nano Films

2020 ◽  
Vol 4 (1) ◽  
pp. 4
Author(s):  
Ognian Dimitrov ◽  
Irina Stambolova ◽  
Sasho Vassilev ◽  
Katerina Lazarova ◽  
Silvia Simeonova
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Sol Gel ◽  
Earth Metal ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Average Roughness ◽  
Force Microscopy ◽  
Atomic Force ◽  
Skin Conditions

Nanosized coatings of ZrO2 were deposited on silicon substrates using sol-gel and spin coating techniques. The precursor solutions were prepared from ZrOCl2.8H2O with the addition of different percentage (0.5–5%) of rare earth Gd3+ ions as dopant. The thin films were homogeneous, with average thickness of 115 nm and refractive index (n) of 1.83. The X-ray diffraction analysis (XRD) revealed the presence of a varying mixture of monoclinic and tetragonal ZrO2 polycrystalline phases, depending on the dopant, all of which with nanosized crystallites. Scanning electron microscopy (SEM) as well as atomic force microscopy (AFM) methods were deployed to investigate the surface morphology and roughness of the thin films, respectively. They revealed a smooth, well uniform and crack-free surface with average roughness of 0.8 nm. It was established that the dopant concentration affects the photoluminescence (PL) properties of the samples. The undoped films exhibited broad violet-blue PL emission, while the addition of Gd3+ ions resulted in new narrow bands in both UV-B and visible light regions, characteristic of the rare earth metal. The intensive emission located at 313 nm can find useful application in medical lamps for treatment of different skin conditions.

On the Properties of Yttria-Stabilized Zirconia Thin Films Prepared by Sol-Gel Method

1970 ◽  
Vol 17 (2) ◽  
pp. 191-196
Author(s):  
Artūras ŽALGA ◽  
Brigita ABAKEVIČIENĖ ◽  
Aleksej ŽARKOV ◽  
Aldona BEGANSKIENĖ ◽  
Aivaras KAREIVA ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Xrd Analysis ◽  
Dip Coating ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Angle Measurements ◽  
Atomic Force ◽  
Contact Angle Measurements ◽  
Dip Coating Technique

The synthesis of nanostructured films of 20 mol% Y2O3 stabilized ZrO2 on corundum (Al2O3) substrates was performed from different sols using dip-coating technique. All obtained samples were repeatedly annealed at 800 °C temperature after each dipping procedure and fully characterized by X-ray diffraction (XRD) analysis. XRD data exhibited that at 800 °C temperature nano-sized Y0.2Zr0.8O2 thin films with cubic (Fm-3m) crystal structure have been formed. The morphological features of obtained coatings were investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The surface tension and hydrophility of the synthesized films were determined by contact angle measurements (CAM).http://dx.doi.org/10.5755/j01.ms.17.2.491

ANNEALING TIME EFFECT ON NANOSTRUCTURED n-ZnO/p-Si HETEROJUNCTION PHOTODETECTOR PERFORMANCE

2015 ◽  
Vol 22 (02) ◽  
pp. 1550027 ◽  
Author(s):  
NADIR. F. HABUBI ◽  
RAID. A. ISMAIL ◽  
WALID K. HAMOUDI ◽  
HASSAM. R. ABID
Keyword(s):  
Annealing Time ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Zno Nps ◽  
Force Microscopy ◽  
Atomic Force ◽  
Junction Type ◽  
P Type ◽  
Quartz Substrates ◽  
Two Peaks

In this work, n- ZnO /p- Si heterojunction photodetectors were prepared by drop casting of ZnO nanoparticles (NPs) on single crystal p-type silicon substrates, followed by (15–60) min; step-annealing at 600∘C. Structural, electrical, and optical properties of the ZnO NPs films deposited on quartz substrates were studied as a function of annealing time. X-ray diffraction studies showed a polycrystalline, hexagonal wurtizte nanostructured ZnO with preferential orientation along the (100) plane. Atomic force microscopy measurements showed an average ZnO grain size within the range of 75.9 nm–99.9 nm with a corresponding root mean square (RMS) surface roughness between 0.51 nm–2.16 nm. Dark and under illumination current–voltage (I–V) characteristics of the n- ZnO /p- Si heterojunction photodetectors showed an improving rectification ratio and a decreasing saturation current at longer annealing time with an ideality factor of 3 obtained at 60 min annealing time. Capacitance–voltage (C–V) characteristics of heterojunctions were investigated in order to estimate the built-in-voltage and junction type. The photodetectors, fabricated at optimum annealing time, exhibited good linearity characteristics. Maximum sensitivity was obtained when ZnO / Si heterojunctions were annealed at 60 min. Two peaks of response, located at 650 nm and 850 nm, were observed with sensitivities of 0.12–0.19 A/W and 0.18–0.39 A/W, respectively. Detectivity of the photodetectors as function of annealing time was estimated.

Nanocrystalline Solutions as Precursors to The Spray Deposition of Cdte Thin Films

1995 ◽  
Vol 382 ◽  
Author(s):  
Martin Pehnt ◽  
Douglas L. Schulz ◽  
Calvin J. Curtis ◽  
Helio R. Moutinho ◽  
Amy Swartzlander ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Grain Size ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Cdte Nanoparticles ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Cdte Thin Films

ABSTRACTIn this article we report the first nanoparticle-derived route to smooth, dense, phase-pure CdTe thin films. Capped CdTe nanoparticles were prepared by injection of a mixture of Cd(CH3)2, (n-C8H17)3 PTe and (n-C8H17)3P into (n-C8H17)3PO at elevated temperatures. The resultant nanoparticles 32-45 Å in diameter were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, thermogravimetric analysis and energy dispersive x-ray spectroscopy. CdTe thin film deposition was accomplished by dissolving CdTe nanoparticles in butanol and then spraying the solution onto SnO2-coated glass substrates at variable susceptor temperatures. Smooth and dense CdTe thin films were obtained using growth temperatures approximately 200 °C less than conventional spray pyrolysis approaches. CdTe films were characterized by x-ray diffraction, UV-Vis spectroscopy, atomic force microscopy, and Auger electron spectroscopy. An increase in crystallinity and average grain size as determined by x-ray diffraction was noted as growth temperature was increased from 240 to 300 °C. This temperature dependence of film grain size was further confirmed by atomic force microscopy with no remnant nanocrystalline morphological features detected. UV-Vis characterization of the CdTe thin films revealed a gradual decrease of the band gap (i.e., elimination of nanocrystalline CdTe phase) as the growth temperature was increased with bulk CdTe optical properties observed for films grown at 300 °C.

Studies of Nanomechanical Properties of Pulsed Laser Deposited NbN films on Si Using Nanoindentation

2012 ◽  
Vol 1424 ◽  
Author(s):  
M. A. Mamun ◽  
A. H. Farha ◽  
Y. Ufuktepe ◽  
H. E. Elsayed-Ali ◽  
A. A. Elmustafa
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Niobium Nitride ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Force Microscopy ◽  
Atomic Force ◽  
Wide Range ◽  
Pile Up ◽  
Average Modulus

ABSTRACTNanomechanical and structural properties of pulsed laser deposited niobium nitride thin films were investigated using X-ray diffraction, atomic force microscopy, and nanoindentation. NbN film reveals cubic δ-NbN structure with the corresponding diffraction peaks from the (111), (200), and (220) planes. The NbN thin films depict highly granular structure, with a wide range of grain sizes that range from 15-40 nm with an average surface roughness of 6 nm. The average modulus of the film is 420±60 GPa, whereas for the substrate the average modulus is 180 GPa, which is considered higher than the average modulus for Si reported in the literature due to pile-up. The hardness of the film increases from an average of 12 GPa for deep indents (Si substrate) measured using XP CSM and load control (LC) modes to an average of 25 GPa measured using the DCM II head in CSM and LC modules. The average hardness of the Si substrate is 12 GPa.

scholarly journals Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

Epitaxial BaTiO3 Thin Films on Different Substrates for Optical Waveguide Applications

1999 ◽  
Vol 597 ◽  
Author(s):  
M. Siegert ◽  
Judit G. Lisoni ◽  
C. H. Lei ◽  
A. Eckau ◽  
W. Zander ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Waveguides ◽  
Rutherford Backscattering Spectrometry ◽  
Optical Data ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Atomic Force ◽  
Transmission Electron

AbstractIn the process of developing thin film electro-optical waveguides we investigated the influence of different substrates on the optical and structural properties of epitaxial BaTiO3 thin films. These films are grown by on-axis pulsed laser deposition (PLD) on MgO(100), MgAl2O4(100), SrTiO3(100) and MgO buffered A12O3(1102) substrates. The waveguide losses and the refractive indices were measured with a prism coupling setup. The optical data are correlated to the results of Rutherford backscattering spectrometry/ion channeling (RBS/C). X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM). BaTiO3 films on MgO(100) substrates show planar waveguide losses of 3 dB/cm and ridge waveguide losses of 5 dB/cm at a wavelength of 633 nm.

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