scholarly journals Design and Analysis of CMOS and CNTFET based Ternary Operators for Scrambling

2019 ◽  
Vol 4 (5) ◽  
pp. 575-579
Author(s):  
Gudala Konica . ◽  
Sreenivasulu Mamilla .
Keyword(s):  
Energy Efficient ◽  
Field Effect ◽  
High Performance ◽  
Digital Circuits ◽  
Performance Metrics ◽  
Supply Voltage ◽  
Field Effect Transistors ◽  
Cmos Technology ◽  
Future Generations ◽  
Power Delay Product

As silicon technology scales down, it is a dominant choice to have high-performance digital circuits. As researchers investigated for high-performance digital circuits for future generations, Carbon Nanotube Field Effect Transistors (CNTFETs) is considered as the most promising technology due to their excellent current driving capability and proved to be an alternative to conventional CMOS technology. A CNTFET based energy efficient ternary operators are proposed for scrambling applications. The transistor-level implementations of operators namely Scrambling Operator1 (SOP1), Scrambling Operator2 (SOP2) and SUM operators are simulated with CMOS and CNTFET in 32 nm technology at 0.9 V supply voltage using Synopsys HSPICE. The performance metrics like Power, Delay and Power-delay product (PDP) are measured and a comparative analysis for CNTFET and CMOS technologies is carried out. The results demonstrate that CNTFET designs have better-optimized results in power, energy consumption, and reduced transistor count.

scholarly journals Growth of high-quality semiconducting tellurium films for high-performance p-channel field-effect transistors with wafer-scale uniformity

2022 ◽  
Vol 6 (1) ◽  
Author(s):  
Taikyu Kim ◽  
Cheol Hee Choi ◽  
Pilgyu Byeon ◽  
Miso Lee ◽  
Aeran Song ◽  
...  
Keyword(s):  
Field Effect ◽  
Physical Vapor Deposition ◽  
High Performance ◽  
Supply Voltage ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Three Dimensional ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Wafer Scale

AbstractAchieving high-performance p-type semiconductors has been considered one of the most challenging tasks for three-dimensional vertically integrated nanoelectronics. Although many candidates have been presented to date, the facile and scalable realization of high-mobility p-channel field-effect transistors (FETs) is still elusive. Here, we report a high-performance p-channel tellurium (Te) FET fabricated through physical vapor deposition at room temperature. A growth route involving Te deposition by sputtering, oxidation and subsequent reduction to an elemental Te film through alumina encapsulation allows the resulting p-channel FET to exhibit a high field-effect mobility of 30.9 cm2 V−1 s−1 and an ION/OFF ratio of 5.8 × 105 with 4-inch wafer-scale integrity on a SiO2/Si substrate. Complementary metal-oxide semiconductor (CMOS) inverters using In-Ga-Zn-O and 4-nm-thick Te channels show a remarkably high gain of ~75.2 and great noise margins at small supply voltage of 3 V. We believe that this low-cost and high-performance Te layer can pave the way for future CMOS technology enabling monolithic three-dimensional integration.

Dirac-source field-effect transistors as energy-efficient, high-performance electronic switches

Science ◽  
2018 ◽  
Vol 361 (6400) ◽  
pp. 387-392 ◽  
Author(s):  
Chenguang Qiu ◽  
Fei Liu ◽  
Lin Xu ◽  
Bing Deng ◽  
Mengmeng Xiao ◽  
...  
Keyword(s):  
Energy Efficient ◽  
Field Effect ◽  
Electron Density Distribution ◽  
High Performance ◽  
Room Temperature ◽  
Supply Voltage ◽  
Field Effect Transistors ◽  
State Of The Art ◽  
Electronic Devices ◽  
Electronic Switches

An efficient way to reduce the power consumption of electronic devices is to lower the supply voltage, but this voltage is restricted by the thermionic limit of subthreshold swing (SS), 60 millivolts per decade, in field-effect transistors (FETs). We show that a graphene Dirac source (DS) with a much narrower electron density distribution around the Fermi level than that of conventional FETs can lower SS. A DS-FET with a carbon nanotube channel provided an average SS of 40 millivolts per decade over four decades of current at room temperature and high device current I60 of up to 40 microamperes per micrometer at 60 millivolts per decade. When compared with state-of-the-art silicon 14-nanometer node FETs, a similar on-state current Ion is realized but at a much lower supply voltage of 0.5 volts (versus 0.7 volts for silicon) and a much steeper SS below 35 millivolts per decade in the off-state.

scholarly journals DESIGN OF ENERGY EFFICIENT HYBRID 1-BIT FULL ADDER FOR ARITHMETIC APPLICATIONS

2020 ◽  
Vol 4 (6) ◽  
pp. 15-18
Author(s):  
Haroon Rasheed S ◽  
Mohan Das S ◽  
Samba Sivudu Gaddam
Keyword(s):  
Energy Consumption ◽  
Energy Efficient ◽  
High Performance ◽  
Low Voltage ◽  
Supply Voltage ◽  
Full Adder ◽  
Cmos Technology ◽  
Internal Logic ◽  
Logic Cells ◽  
Power Delay Product

This paper presents an energy efficient 1-bit full adder designed with a low voltage and high performance internal logic cells which leads to have abridged Power Delay Product (PDP). The customized XNOR and XOR gates, a necessary entity, are also presented. The simulations for the designed circuits performed in cadence virtuoso tool with 45-nm CMOS technology at a supply voltage of 0.9 Volts. The proposed 1-bit adder cell is compared with various trendy adders based on speed, power consumption and energy (PDP). The proposed adder schemes with modified internal entity cells achieve significant savings in terms of delay and energy consumption and which are more than 77% and 40.47% respectively when compared with conventional “C-CMOS” 1-bit full adder and other counter parts.

Detailed Analysis of Ultra Low Power Column Compression WALLACE and DADDA Multiplier in Sub-Threshold Regime

2016 ◽  
pp. 78-123
Author(s):  
Priya Gupta ◽  
Anu Gupta ◽  
Abhijit Asati
Keyword(s):  
Low Power ◽  
Energy Efficient ◽  
Performance Metrics ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Propagation Delay ◽  
Ultra Low Power ◽  
Ripple Carry Adder ◽  
Power Delay Product ◽  
Threshold Regime

In this chapter, the design and comparative analysis is done in between the most well-known column compression multipliers by Wallace and Dadda in sub-threshold regime. In order to reduce the hardware which ultimately reduces area, power and overall power delay product, an energy efficient basic modules of the multipliers like AND gates, half adders, full adders and partial product generate units have been analyzed for sub-threshold operation. At the last stage ripple carry adder is used in both multipliers. The performance metrics considered for the analysis of the multipliers are: power, delay and PDP. Simulation studies are carried out for 8x8-bit and 16x16-bit input data width. The proposed circuits show energy efficient results with Spectre simulations for the TSMC 180nm CMOS technology at 0.4V supply voltage. The proposed multipliers so implemented outperform its counterparts exhibiting low power consumption and lesser propagation delay as compared to conventional multipliers.

scholarly journals A Simulation Study of a Gate-All-Around Nanowire Transistor with a Core–Insulator

Micromachines ◽  
2020 ◽  
Vol 11 (2) ◽  
pp. 223 ◽  
Author(s):  
Yannan Zhang ◽  
Ke Han ◽  
and Jiawei Li
Keyword(s):  
Metal Oxide ◽  
Low Power ◽  
Energy Efficient ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Future Generation ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Ultra Low Power

Ultra-low power and high-performance logical devices have been the driving force for the continued scaling of complementary metal oxide semiconductor field effect transistors which greatly enable electronic devices such as smart phones to be energy-efficient and portable. In the pursuit of smaller and faster devices, researchers and scientists have worked out a number of ways to further lower the leaking current of MOSFETs (Metal oxide semiconductor field effect transistor). Nanowire structure is now regarded as a promising candidate of future generation of logical devices due to its ultra-low off-state leaking current compares to FinFET. However, the potential of nanowire in terms of off-state current has not been fully discovered. In this article, a novel Core–Insulator Gate-All-Around (CIGAA) nanowire has been proposed, investigated, and simulated comprehensively and systematically based on 3D numerical simulation. Comparisons are carried out between GAA and CIGAA. The new CIGAA structure exhibits low off-state current compares to that of GAA, making it a suitable candidate of future low-power and energy-efficient devices.

An Energy Efficient Logic Approach to Implement CMOS Full Adder

2017 ◽  
Vol 26 (05) ◽  
pp. 1750084 ◽  
Author(s):  
Pankaj Kumar ◽  
Rajender Kumar Sharma
Keyword(s):  
Energy Efficient ◽  
High Speed ◽  
Supply Voltage ◽  
Signal Integrity ◽  
Full Adder ◽  
Cmos Technology ◽  
Nand Gate ◽  
Common Environment ◽  
Logic Approach ◽  
Power Delay Product

An energy efficient internal logic approach for designing two 1-bit full adder cells is proposed in this work. It is based on decomposition of the full adder logic into the smaller modules. Low power, high speed and smaller area are the main features of the proposed approach. A modified power aware NAND gate, an essential entity, is also presented. The proposed full adder cells achieve 30.13% and improvement in their power delay product (PDP) metrics when compared with the best reported full adder design. Some of the popular adders and proposed adders are designed with cadence virtuoso tool with UMC 90[Formula: see text]nm technology operating at 1.2[Formula: see text]V supply voltage and UMC 55[Formula: see text]nm CMOS technology operating at 1.0[Formula: see text]V. These designs are tested on a common environment. During the experiment, it is also found that the proposed adder cells exhibit excellent signal integrity and driving capability when operated at low voltages.

DNA-directed nanofabrication of high-performance carbon nanotube field-effect transistors

Science ◽  
2020 ◽  
Vol 368 (6493) ◽  
pp. 878-881 ◽  
Author(s):  
Mengyu Zhao ◽  
Yahong Chen ◽  
Kexin Wang ◽  
Zhaoxuan Zhang ◽  
Jason K. Streit ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Self Assembly ◽  
Field Effect ◽  
High Performance ◽  
Performance Metrics ◽  
Field Effect Transistors ◽  
Model Systems ◽  
Large Area ◽  
Cnt Arrays ◽  
Semiconductor Arrays

Biofabricated semiconductor arrays exhibit smaller channel pitches than those created using existing lithographic methods. However, the metal ions within biolattices and the submicrometer dimensions of typical biotemplates result in both poor transport performance and a lack of large-area array uniformity. Using DNA-templated parallel carbon nanotube (CNT) arrays as model systems, we developed a rinsing-after-fixing approach to improve the key transport performance metrics by more than a factor of 10 compared with those of previous biotemplated field-effect transistors. We also used spatially confined placement of assembled CNT arrays within polymethyl methacrylate cavities to demonstrate centimeter-scale alignment. At the interface of high-performance electronics and biomolecular self-assembly, such approaches may enable the production of scalable biotemplated electronics that are sensitive to local biological environments.

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