Residual Photoresist Identified as Cause for Frequency-Dependent Signal-to-Noise Failure After Autoclave Stress Testing

1999 ◽  
Author(s):  
Martin J. McVeigh
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Failure Mode ◽  
High Speed ◽  
Stress Testing ◽  
Signal To Noise ◽  
Analysis Techniques ◽  
Dependent Signal ◽  
Voltage Swing ◽  
Maximum Voltage

Abstract A case history is presented for the failure analysis of a 0.5u CMOS A/D converter in which high fallout occurred after autoclave stressing. The observed failure mode of degraded signal-to-noise distortion (SINAD) ratio (measured in dB) was found to affect devices within a specific bandwidth centered around 5MHz. From a circuit designer’s viewpoint, an explanation for this unique failure mode did not readily present itself. Yet, using straightforward failure analysis techniques, involving laser ablation of photoresist and selective etching of passivation, the specific failing circuit block was isolated. Crosssectional analysis, scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS) found evidence of residual photoresist at topography related voids in the nitride passivation layer. The photoresist reacts with moisture in the autoclave, resulting in increased capacitance at minimum-spaced top layer metal lines. This failure mechanism correlates with the observed maximum SINAD degradation around 5MHz: at this frequency the signals along the affected metal lines are at their maximum voltage swing. This failure mechanism is potentially an issue for any similar high-speed, high-resolution designs.

Analysis of Delta Iddq Soft Fails on Pass Chips

2006 ◽  
Author(s):  
I. Österreicher ◽  
S. Eckl ◽  
B. Tippelt ◽  
S. Döring ◽  
R. Prang ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mode ◽  
Photon Emission ◽  
Complete Analysis ◽  
Functional Tests ◽  
Analysis Techniques ◽  
Atomic Force ◽  
Current Consumption ◽  
Emission Microscopy ◽  
Failure Localization

Abstract Depending on the field of application the ICs have to meet requirements that differ strongly from product to product, although they may be manufactured with similar technologies. In this paper a study of a failure mode is presented that occurs on chips which have passed all functional tests. Small differences in current consumption depending on the state of an applied pattern (delta Iddq measurement) are analyzed, although these differences are clearly within the usual specs. The challenge to apply the existing failure analysis techniques to these new fail modes is explained. The complete analysis flow from electrical test and Global Failure Localization to visualization is shown. The failure is localized by means of photon emission microscopy, further analyzed by Atomic Force Probing, and then visualized by SEM and TEM imaging.

The Application of Novel Failure Analysis Techniques and Defect Modeling in Eliminating Short Poly End-Cap Problem in Submicron CMOS Devices

1996 ◽  
Author(s):  
Y.E. Hong ◽  
M.T.T. We
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Leakage Current ◽  
Packing Density ◽  
Process Change ◽  
Defect Modeling ◽  
Functional Failure ◽  
Analysis Techniques ◽  
Post Process ◽  
First Time

Abstract As transistor dimension shrinks down below submicron to cater for higher speed and higher packing density, it is very important to characterize the shrinkage carefully to avoid unwanted parametric problems. Leakage current across short poly end-cap is a new failure mechanism that falls in this category and was for the first time, uncovered in submicron multilayered CMOS devices. This mechanism was responsible for a systematic yield problem; identified as the 'centre wafer striping' functional failure problem. This paper presents the advanced failure analysis techniques and defect modeling used to narrow down and identify this new mechanism. Post process change by loosening the marginal poly end-cap criteria eliminated the problem completely.

Study of Thermal Cycle Induced CPI Failure Mode in a Lidded FC-BGA Package

2019 ◽  
Author(s):  
Muhammad Monzur Morshed ◽  
Esther Chen ◽  
Anita Madan
Keyword(s):  
Failure Analysis ◽  
Failure Mode ◽  
Failure Modes ◽  
Material Selection ◽  
Interfacial Stress ◽  
Analysis Techniques ◽  
Bga Package ◽  
Induced Defects ◽  
Fatigue Failures ◽  
Insight Into

Abstract Dissimilarities of thermal expansion coefficient between chip and package materials results in stress and strain at the solder interconnect leading to fatigue failures. Underfill is used between chip and package to reduce the interfacial stress and hence increase reliability. In this work, four flipchip package test vehicles underwent thermal cycling to accelerate the stress and were investigated systematically with different failure analysis techniques to study their failure modes. The prevalent failure mode was observed to be at the corner area between the chip and package using different advanced failure analysis techniques. This work demonstrates the technical complexity of analyzing stress induced defects and provides insight into CPI-based material selection.

An Application of Breakthrough Failure Analysis Techniques in Eliminating Silicon Dislocation Problem in Sub-Micron CMOS Devices

1997 ◽  
Author(s):  
E. H. Yeoh ◽  
W. M. Mak ◽  
H. C. Lock ◽  
S. K. Sim ◽  
C. C. Ooi ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Packing Density ◽  
Failure Mechanisms ◽  
Potential Solution ◽  
Critical Dimensions ◽  
Functional Failure ◽  
Analysis Techniques ◽  
Root Cause ◽  
First Time

Abstract As device interconnect layers increase and transistor critical dimensions decrease below sub-micron to cater for higher speed and higher packing density, various new and subtle failure mechanisms have emerged and are becoming increasingly prevalent. Silicon dislocation is a new failure mechanism that falls in this category and was for the first time, uncovered in submicron multilayered CMOS devices. This mechanism was responsible for a systematic yield problem; identified as the 'centre GFA wafer' functional failure problem. In this paper, several breakthrough failure analysis techniques used to narrow down and identify this new mechanism will be presented. Root cause determination and potential solution to this problem will also be discussed.

Techniques for Identification of Silver Migration in Plastic Encapsulated Devices Assembled with Molding Compound Containing Red Phosphorus Flame Retardant Material

2008 ◽  
Author(s):  
Ronald R. Hylton
Keyword(s):  
Failure Analysis ◽  
Flame Retardant ◽  
Failure Mechanism ◽  
Red Phosphorus ◽  
Molding Compound ◽  
Molding Compounds ◽  
Analysis Techniques

Abstract This paper describes the electrical signatures and failure analysis techniques used to identify plastic encapsulated devices that have failed due to silver migration. This migration, which produces resistive leakages between adjacent pins, has been associated with molding compounds that utilize red phosphorous as a flame retardant material. A description of the failure mechanism is also presented.

Physical Failure Analysis Techniques and Studies on Vertical Short Issue of 65nm Devices

2008 ◽  
Author(s):  
P.K. Tan ◽  
Z.H. Mai ◽  
S.L. Toh ◽  
E. Hendarto ◽  
Q. Deng ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Failure Mechanism ◽  
Semiconductor Devices ◽  
Nanoscale Devices ◽  
Nanometer Range ◽  
Analysis Techniques ◽  
Chemical Etch ◽  
Scaling Down

Abstract With the scaling down of semiconductor devices to nanometer range, physical failure analysis (PFA) has become more challenging. In this paper, a different method of performing PFA to identify a physical vertical short of intermetal layer in nanoscale devices is discussed. The proposed chemical etch and backside chemical etch PFA techniques have the advantages of sample preparation evenness and efficiency compared to conventional PFA. This technique also offers a better understanding of the failure mechanism and is easier to execute in identifying the vertical short issue.

Single Device Characterization by Nano-probing to Identify Failure Root Cause

2005 ◽  
Author(s):  
Chao-Chi Wu ◽  
Jon C. Lee ◽  
Jung-Hsiang Chuang ◽  
Tsung-Te Li
Keyword(s):  
Failure Analysis ◽  
Success Rate ◽  
Failure Mechanism ◽  
Fault Isolation ◽  
Device Characterization ◽  
Nano Technology ◽  
Analysis Techniques ◽  
Root Cause ◽  
Visual Defects ◽  
Lower Success Rate

Abstract In general failure analysis cases, a less invasive fault isolation approach can be utilized to resolve a visual root cause defect. In the case of nano technology, visual defects are not readily resolved, due to an increase in non-visible defects. The nonvisible defects result in a lower success rate since conventional FA methods/tools are not efficient in identifying the failure root cause. For the advanced nanometer process, this phenomenon is becoming more common; therefore the utilization of advanced techniques are required to get more evidence to resolve the failure mechanism. The use of nanoprobe technology enables advanced device characterization h order to obtain more clues to the possible failure mechanism before utilizing the traditional physical failure analysis techniques.

Qualification of SiP Products: Quasi-Static Cyclic Mechanical Bending

2007 ◽  
Author(s):  
D. Farley ◽  
Y. Zhou ◽  
A. Dasgupta ◽  
J. F. J. Caers ◽  
J. W. C. de Vries
Keyword(s):  
Solder Joint ◽  
Failure Analysis ◽  
Failure Mode ◽  
Stress Testing ◽  
Flip Chip ◽  
Failure Mechanisms ◽  
Physics Of Failure ◽  
Static Mechanical ◽  
Mechanical Bending ◽  
Solder Joint Fatigue

An LGA (Land Grid Array) laminate-based epoxy-molded RF SiP (system-in-package) containing four wirebonded and three flip-chip dice is qualified for quasi-static mechanical flexure using a PoF (Physics-of-Failure) approach. The process includes: design and execution of accelerated stress testing; failure analysis to identify the failure mode and mechanism; and mechanistic simulations to assess acceleration factors for extrapolation of the failures to field environments for selected failure mechanisms. Illustrative qualification results are presented for solder joint fatigue.

ESD Failure Analysis and Robustness Design in Vertical-Diffused MOS Transistors

2014 ◽  
Vol 926-930 ◽  
pp. 456-461
Author(s):  
Shen Li Chen ◽  
Wen Ming Lee ◽  
Chi Ling Chu
Keyword(s):  
Failure Analysis ◽  
Oxide Layer ◽  
Failure Mode ◽  
Epitaxial Layer ◽  
Gate Oxide ◽  
The Other ◽  
Mos Transistors ◽  
Oxide Breakdown ◽  
Analysis Techniques ◽  
Silicon Epitaxial Layer

This paper deals with a detailed study of ESD failure mode and how to strengthen of the VDMOS used for power applications. The ESD post-zapped failure of power VDMOS transistors due to HBM, MM, and CDM stresses are examined in this work. Through standard failure analysis techniques by using EMMI and SEM were applied to identify the failure locations. The MM failure mode in this power MOSFET was caused by the gate oxide breakdown near n+ region in the source end as an ESD zapping. And, the ESD failure damage under HBM and CDM stresses were caused by the gate material molten near the gate pad and tunneled through the oxide layer into silicon epitaxial layer. Furthermore, the ESD robustness designs of power VDMOS transistors are also addressed in this work. The first ESD incorporated design is Zener diodes back-to-back clamping the gate-to-source pad, and on the other hand, another one excellent design contains two Zener diodes clamping the gate-to-source and gate-to-drain terminals of a VDMOS, respectively.

Localized Fatigue Failure Analysis of Aluminium Crewboats due to Propeller Pulse Loads: A Case Study

2014 ◽  
Vol 891-892 ◽  
pp. 1041-1046
Author(s):  
Trevor M. Leacy ◽  
Roberto Ojeda
Keyword(s):  
Quality Control ◽  
Failure Analysis ◽  
Fatigue Failure ◽  
High Speed ◽  
Design Standards ◽  
Analysis Techniques ◽  
Construction Methods ◽  
Analysis Methods ◽  
Marine Industry

Marine grade alloys are extensively being used in high speed vessels such as patrol crafts, ferries and crew boats, where a reduction of the structural weight is critical to achieve higher speeds [1]. The use of aluminium has forced marine industry engineers to develop methods to design against fatigue failure. This has largely been addressed by the development of design standards, analysis techniques and the improvement of quality control and construction methods [2]. Nevertheless, even with these advancements there is a continued need for the development and improvement of aluminium analysis methods and guidelines [3].

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