Physical Failure Analysis Techniques and Studies on Vertical Short Issue of 65nm Devices

2008 ◽  
Author(s):  
P.K. Tan ◽  
Z.H. Mai ◽  
S.L. Toh ◽  
E. Hendarto ◽  
Q. Deng ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Failure Mechanism ◽  
Semiconductor Devices ◽  
Nanoscale Devices ◽  
Nanometer Range ◽  
Analysis Techniques ◽  
Chemical Etch ◽  
Scaling Down

Abstract With the scaling down of semiconductor devices to nanometer range, physical failure analysis (PFA) has become more challenging. In this paper, a different method of performing PFA to identify a physical vertical short of intermetal layer in nanoscale devices is discussed. The proposed chemical etch and backside chemical etch PFA techniques have the advantages of sample preparation evenness and efficiency compared to conventional PFA. This technique also offers a better understanding of the failure mechanism and is easier to execute in identifying the vertical short issue.

Fault Isolation Techniques and Studies on Low Resistance Gross Short Failures

2012 ◽  
Author(s):  
P.K. Tan ◽  
Z.H. Mai ◽  
W.Y. Lee ◽  
Y.Z. Ma ◽  
R. He ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Semiconductor Devices ◽  
Fault Isolation ◽  
Nanoscale Devices ◽  
Nanometer Range ◽  
Low Resistance ◽  
Isolation Techniques ◽  
Different Types ◽  
Scaling Down

Abstract With the scaling down of semiconductor devices to nanometer range, fault isolation and physical failure analysis (PFA) have become more challenging. In this paper, different types of fault isolation techniques to identify gross short failures in nanoscale devices are discussed. The proposed cut/deprocess and microprobe/bench technique is an economical and simple way of identifying low resistance gross short failures.

The Influence of Optical Beams on Semiconductor Devices During Failure Analysis

2002 ◽  
Author(s):  
Charles Zhang ◽  
Matt Thayer ◽  
Lowell Herlinger ◽  
Greg Dabney ◽  
Manuel Gonzalez
Keyword(s):  
Failure Analysis ◽  
Semiconductor Devices ◽  
Laser Wavelength ◽  
Fault Isolation ◽  
Analysis Techniques ◽  
Cmos Transistor ◽  
Optical Beams

Abstract A number of backside analysis techniques rely on the successful use of optical beams in performing backside fault isolation. In this paper, the authors have investigated the influence of the 1340 nm and 1064 nm laser wavelength on advanced CMOS transistor performance.

Cutting-Edge Sample Preparation from FIB to Ar Concentrated Ion Beam Milling of Advanced Semiconductor Devices

2020 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
R. Li ◽  
M.L. Ray ◽  
P.E. Fischione ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
Specific Area ◽  
Cutting Edge ◽  
Preparation Technique ◽  
Ion Milling ◽  
Sample Preparation Technique

Abstract Fast and accurate examination from the bulk to the specific area of the defect in advanced semiconductor devices is critical in failure analysis. This work presents the use of Ar ion milling methods in combination with Ga focused ion beam (FIB) milling as a cutting-edge sample preparation technique from the bulk to specific areas by FIB lift-out without sample-preparation-induced artifacts. The result is an accurately delayered sample from which electron-transparent TEM specimens of less than 15 nm are obtained.

Case Study Failure Analysis of an Ultra-High Vacuum Enclosure Made of a Silicon Chip and Borosilicate Glass for the Cold Atom Laboratory

2017 ◽  
Author(s):  
Gil Garteiz ◽  
Javeck Verdugo ◽  
David Aveline ◽  
Eric Williams ◽  
Arvid Croonquist ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Failure Mechanism ◽  
Borosilicate Glass ◽  
High Vacuum ◽  
Cold Atom ◽  
Fault Isolation ◽  
Ultra High Vacuum ◽  
Liquid Bath

Abstract In this paper, a failure analysis case study on a custom-built vacuum enclosure is presented. The enclosure’s unique construction and project requirement to preserve the maximum number of units for potential future use in space necessitated a fluorocarbon liquid bath for fault isolation and meticulous sample preparation to preserve the failure mechanism during failure analysis.

The Application of Novel Failure Analysis Techniques and Defect Modeling in Eliminating Short Poly End-Cap Problem in Submicron CMOS Devices

1996 ◽  
Author(s):  
Y.E. Hong ◽  
M.T.T. We
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Leakage Current ◽  
Packing Density ◽  
Process Change ◽  
Defect Modeling ◽  
Functional Failure ◽  
Analysis Techniques ◽  
Post Process ◽  
First Time

Abstract As transistor dimension shrinks down below submicron to cater for higher speed and higher packing density, it is very important to characterize the shrinkage carefully to avoid unwanted parametric problems. Leakage current across short poly end-cap is a new failure mechanism that falls in this category and was for the first time, uncovered in submicron multilayered CMOS devices. This mechanism was responsible for a systematic yield problem; identified as the 'centre wafer striping' functional failure problem. This paper presents the advanced failure analysis techniques and defect modeling used to narrow down and identify this new mechanism. Post process change by loosening the marginal poly end-cap criteria eliminated the problem completely.

Characterization and Failure Analysis of Wafer Bonded Devices and Unfilled Through-Silicon-Vias (TSVs)

2008 ◽  
Author(s):  
C. Cassidy ◽  
J. Kraft ◽  
G. Koppitsch ◽  
E. Brandlhofer ◽  
M. Steiner ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Semiconductor Devices ◽  
3D Integration ◽  
Through Silicon Vias ◽  
Silicon Vias

Abstract This paper is concerned with characterization and failure analysis challenges posed by 3D integration of semiconductor devices, with a particular focus on wafer bonded components and Through Silicon Vias (TSV). Requirements for sample preparation are discussed, along with advantages and limitations exhibited by various different techniques. Analysis examples with real devices are presented, along with successful sample preparation solutions enabled by a precision polishing toolset.

An Application of Breakthrough Failure Analysis Techniques in Eliminating Silicon Dislocation Problem in Sub-Micron CMOS Devices

1997 ◽  
Author(s):  
E. H. Yeoh ◽  
W. M. Mak ◽  
H. C. Lock ◽  
S. K. Sim ◽  
C. C. Ooi ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Packing Density ◽  
Failure Mechanisms ◽  
Potential Solution ◽  
Critical Dimensions ◽  
Functional Failure ◽  
Analysis Techniques ◽  
Root Cause ◽  
First Time

Abstract As device interconnect layers increase and transistor critical dimensions decrease below sub-micron to cater for higher speed and higher packing density, various new and subtle failure mechanisms have emerged and are becoming increasingly prevalent. Silicon dislocation is a new failure mechanism that falls in this category and was for the first time, uncovered in submicron multilayered CMOS devices. This mechanism was responsible for a systematic yield problem; identified as the 'centre GFA wafer' functional failure problem. In this paper, several breakthrough failure analysis techniques used to narrow down and identify this new mechanism will be presented. Root cause determination and potential solution to this problem will also be discussed.

Failure Analysis of Advanced Microprocessors through Backside Approaches

1998 ◽  
Author(s):  
D. Davis ◽  
O. Diaz de Leon ◽  
L. Hughes ◽  
S. V. Pabbisetty ◽  
R. Parker ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Flip Chip ◽  
Preparation Methods ◽  
Analysis Techniques ◽  
Analytical Approaches ◽  
Sample Preparation Methods ◽  
New Devices

Abstract The advent of Flip Chip and other complex package configurations and process technologies have made conventional failure analysis techniques inapplicable. This paper covers the ways in which conventional techniques have been modified to meet the FA challenges presented by these new devices – specifically, by forcing analysis to be done from the backside of the device. Modifications to the traditional FA process steps, including new sample preparation methods, changes in hardware, and alterations to physical failure analysis processes are described. To demonstrate the use of backside analytical approaches, some examples of applications and a case study are also included.

High Throughput and Multiple Length Scale Sample Preparation for Characterization and Failure Analysis of Advanced Semiconductor Devices

2019 ◽  
Author(s):  
C. S. Bonifacio ◽  
P. Nowakowski ◽  
M. L. Ray ◽  
P. E. Fischione ◽  
C. Downing
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
High Throughput ◽  
Semiconductor Devices ◽  
Specific Area ◽  
Length Scale ◽  
Ion Milling ◽  
20 Nm ◽  
Argon Ion ◽  
Multiple Length Scale

Abstract Failure analysis of advanced semiconductor devices demands fast and accurate examination from the bulk to the specific area of the defect. Consequently, nanometer resolution and below is critical for finding defects. This work presents the use of argon ion milling methods for multiple length scale sample preparation, micrometer to sub-ångström, without sample preparation- induced artifacts for correlative SEM and TEM failure analysis. The result is an accurately delayered sample from which electron-transparent TEM specimens of less than 20 nm are obtained.

Techniques for Identification of Silver Migration in Plastic Encapsulated Devices Assembled with Molding Compound Containing Red Phosphorus Flame Retardant Material

2008 ◽  
Author(s):  
Ronald R. Hylton
Keyword(s):  
Failure Analysis ◽  
Flame Retardant ◽  
Failure Mechanism ◽  
Red Phosphorus ◽  
Molding Compound ◽  
Molding Compounds ◽  
Analysis Techniques

Abstract This paper describes the electrical signatures and failure analysis techniques used to identify plastic encapsulated devices that have failed due to silver migration. This migration, which produces resistive leakages between adjacent pins, has been associated with molding compounds that utilize red phosphorous as a flame retardant material. A description of the failure mechanism is also presented.

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