Single Die 'Hands-Free' Layer-by-Layer Mechanical Deprocessing for Failure Analysis or Reverse Engineering

2008 ◽  
Author(s):  
Tony Moor ◽  
Eli Malyanker ◽  
Efrat Raz-Moyal
Keyword(s):  
Reverse Engineering ◽  
Failure Analysis ◽  
Competitive Analysis ◽  
Patent Protection ◽  
Semiconductor Device ◽  
Mechanical Polishing ◽  
Layer By Layer ◽  
Free Layer ◽  
Step Method ◽  
Computer Controlled

Abstract The idea behind Destructive Semiconductor Reverse Engineering (DSRE) is to investigate a device in part or as a whole using many of the techniques employed in the physical failure analysis (PFA) field. The device is usually examined for intellectual property/patent protection or competitive analysis purposes. This paper presents a technique for the full layer-by-layer deprocessing of a single semiconductor device using purely mechanical polishing for DSRE or FA. It describes a step-by-step method developed by Raw Science/Datel Design and Development and Gatan for the reliable, purely mechanical deprocessing of individual dice. The paper presents the two modifications made to the process to virtually eliminate the edge effects. A computer controlled mechanical polishing system coupled with a unique customized process allows for the investigation of those one of a kind samples as a whole with 100% success rate.

A New Deprocess Flow of Failure Analysis for MEMS Motion Sensor

2013 ◽  
Author(s):  
Chun-An Huang ◽  
Han-Yun Long ◽  
King-Ting Chiang ◽  
Li Chuang ◽  
Kevin Tsui
Keyword(s):  
Failure Analysis ◽  
Optical Microscopy ◽  
Motion Sensor ◽  
Thermal System ◽  
Layer By Layer ◽  
Sensor Failure ◽  
Process Flow ◽  
New Process ◽  
Cutting System ◽  
Successful Observation

Abstract This paper demonstrates a new de-process flow for MEMS motion sensor failure analysis, using layer by layer deprocessing to locate defect points. Analysis tools used in this new process flow include IR optical microscopy, thermal system, SEM and a cutting system to de-process of MEMS motion sensor and successful observation defect points.

Localization of a Complex Failure by Combining ATPG and Customer-Oriented Application Testing

2013 ◽  
Author(s):  
Kai Wang ◽  
Rhys Weaver ◽  
David Johnson
Keyword(s):  
Failure Analysis ◽  
Semiconductor Device ◽  
Digital Design ◽  
Radio Communication ◽  
Communication Failure ◽  
Systemic Analysis ◽  
Rf Communication ◽  
System On A Chip ◽  
Electrical Diagnostics ◽  
Failure Location

Abstract A systemic analysis was chosen to evaluate a real case Bluetooth (BT) radio failure in the aspects of RF communication, digital design, firmware, application software, semiconductor device physics and processing, and failure analysis. This paper explores the range of testing, including customer application testing, required to confirm and localize a BT RF communication failure. It shows that the radio communication failure was not, as expected, caused by faulty radio hardware; it was rather linked to problematic encryption hardware at the assistance of the Synergy BT to mobile application. The paper also explores that the digital fault can only be detected by the timing sensitive transition fault scan patterns and how to obtain the physical failure location. Thus, the combination of ATPG and application testing provides a consistency between electrical diagnostics which yields a higher success rate at subsequent physical failure analysis of complex modern RF System on a Chip.

Legal and Economic Justifi cation for Software Protection

2011 ◽  
pp. 328-339
Author(s):  
Bruno de Vuyst
Keyword(s):  
Reverse Engineering ◽  
Open Source ◽  
Open Source Software ◽  
Copyright Protection ◽  
Patent Protection ◽  
Computer Programs ◽  
Property Law ◽  
Software Protection ◽  
National Patent ◽  
The U.S

This chapter discusses legal and economic rationale in regards to open source software protection. Software programs are, under TRIPS1, protected by copyright (reference is made to the Berne Convention2). The issue with this protection is that, due to the dichotomy idea/expression that is typical for copyright protection, reverse engineering of software is not excluded, and copyright is hence found to be an insufficient protection. Hence, in the U.S., software makers have increasingly turned to patent protection. In Europe, there is an exclusion of computer programs in Article 52 (2) c) EPC (EPO, 1973), but this exclusion is increasingly narrowed and some call for abandoning the exclusion altogether. A proposal by the European Commission, made in 2002, called for a directive to allow national patent authorities to patent software in a broader way, so as to ensure further against reverse engineering; this proposal, however, was shelved in 2005 over active opposition within and outside the European parliament. In summary, open source software does not fit in any proprietary model; rather, it creates a freedom to operate. Ultimately, there is a need to rethink approaches to property law so as to allow for viable software packaging in both models.

scholarly journals Mechanical Behavior of Differently Oriented Electron Beam Melting Ti–6Al–4V Components Using Digital Image Correlation

2018 ◽  
Vol 141 (1) ◽  
Author(s):  
Edel Arrieta ◽  
Mohammad Haque ◽  
Jorge Mireles ◽  
Calvin Stewart ◽  
Cesar Carrasco ◽  
...  
Keyword(s):  
Electron Beam ◽  
Digital Image Correlation ◽  
Failure Analysis ◽  
Digital Image ◽  
Electron Beam Melting ◽  
Measuring Method ◽  
Image Correlation ◽  
Layer By Layer ◽  
Strain Fields ◽  
Shear Effects

Mechanical properties of additive manufactured metal components can be affected by the orientation of the layer deposition. In this investigation, Ti–6Al–4V cylindrical specimens were fabricated by electron beam melting (EBM) at four different build angles (0 deg, 30 deg, 60 deg, and 90 deg) and tested as per ASTM E8 Standard Test Methods for Tension Testing of Metallic Materials. With the layer-by-layer fabrication suggesting granting anisotropic properties to the builds, strain fields were recorded by digital image correlation (DIC) in the search for shear effects under uniaxial loads. For the validation of this measuring method, axial strains were measured with a clip extensometer and a virtual extensometer, simultaneously. Failure analysis of the specimens at different orientations was conducted to evidence the recording of shear strain fields. The failure analysis included fractography, optical micrographs of the microstructure distribution, and failure profiles displaying different failure features associated with the layering orientation. Additionally, an experimental study case of how the failure mode of components can potentially be designed from the fabrication process is presented. At the end, remarks about the shear effects found, and an insight of the possibility of designing components by failure for safer structures are discussed.

Comparison of Precision XTEM Specimen Preparation Techniques for Semiconductor Failure Analysis

1997 ◽  
Vol 3 (S2) ◽  
pp. 357-358
Author(s):  
C. Amy Hunt
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Mechanical Polishing ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Tem Analysis ◽  
The Past ◽  
Preparation Techniques

The demand for TEM analysis in semiconductor failure analysis is rising sharply due to the shrinking size of devices. A well-prepared sample is a necessity for getting meaningful results. In the past decades, a significant amount of effort has been invested in improving sample preparation techniques for TEM specimens, especially precision cross-sectioning techniques. The most common methods of preparation are mechanical dimpling & ion milling, focused ion beam milling (FIBXTEM), and wedge mechanical polishing. Each precision XTEM technique has important advantages and limitations that must be considered for each sample.The concept for both dimpling & ion milling and wedge specimen preparation techniques is similar. Both techniques utilize mechanical polishing to remove the majority of the unwanted material, followed by ion milling to assist in final polishing or cleaning. Dimpling & ion milling produces the highest quality samples and is a relatively easy technique to master.

Binder-free heat dissipation films assembled with reduced graphene oxide and alumina nanoparticles for simultaneous high in-plane and cross-plane thermal conductivities

2019 ◽  
Vol 7 (30) ◽  
pp. 9380-9388 ◽  
Author(s):  
Sunghwan Hong ◽  
Seong Soo Yoo ◽  
Pil J. Yoo
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Heat Dissipation ◽  
Alumina Nanoparticles ◽  
Layer By Layer ◽  
Free Layer ◽  
Reduced Graphene ◽  
Binder Free ◽  
Thermal Conductivities

Binder-free layer-by-layer assembled multilayers consisting of reduced graphene oxide and alumina nanoparticles are prepared for implementing heat dissipation films with outstandingly high in-plane and cross-plane thermal conductivities.

Complete Characterization of AlxGa1-xN/InxGa1-xN/GaN Devices by Sims

1997 ◽  
Vol 468 ◽  
Author(s):  
C. Huang ◽  
S. Mitha ◽  
J. W. Erickson ◽  
R. Clark-Phelps ◽  
Jack Sheng ◽  
...  
Keyword(s):  
Growth Rate ◽  
Reverse Engineering ◽  
Failure Analysis ◽  
Concurrent Engineering ◽  
Alloy Composition ◽  
Electronic Devices ◽  
Complete Characterization ◽  
Sims Analysis

ABSTRACTSIMS analysis was applied to the characterization of GaN, AlGaN/GaN and InGaN/GaN grown by MOCVD. Such characterization enables the control of purity and doping, and the determination of growth rate and alloy composition. The analysis can be performed on finished optoelectronic and electronic devices and this makes SIMS technique a powerful tool for failure analysis, reverse engineering, and concurrent engineering.

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