In-SEM Fault Isolation Using Voltage Contrast, EBIC/EBAC and Resistive Contrast Imaging

2020 ◽  
Author(s):  
Lori L. Sarnecki ◽  
Caleb Daigneault
Keyword(s):  
Semiconductor Device ◽  
Photon Emission ◽  
Fault Localization ◽  
Spot Size ◽  
Fault Isolation ◽  
Contrast Imaging ◽  
Laser Signal ◽  
Signal Injection ◽  
Voltage Contrast ◽  
Optical Level

Abstract With the ever shrinking semiconductor device features coupled with the increasing circuit density, optical level fault localization techniques such as Photon Emission Microscopy (PEM), Laser Signal Injection Microscopy (LSIM) and Thermal Hotspot Localization (THS) can only get you so far due to these limitations: magnification, spot size and drop in detection sensitive at higher magnification. Using a 100x objective can put you in the ball park. Test data such as ATE & ATPG can point you to a specific block of circuitry but still far from defect localization. With in-SEM fault isolation and localization techniques such as Voltage Contrast (VC), Electron Beam Induced/Absorb Current (EBIC/EBAC) and Resistive Contrast Imaging (RCI), the nano-scale defect can be further localized due to the advantage of the magnification and spot size. This paper offers the combined techniques of optical level fault localization (PEM, LSIM & THS) and in- SEM or E-beam techniques (VC, EBAC, RCI) to successfully perform fault localization when challenged with the above scenarios.

Case Study in Fault Isolation of a Metal Short for Yield Enhancement

2010 ◽  
Author(s):  
Sarven Ipek ◽  
David Grosjean
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Photon Emission ◽  
Fault Isolation ◽  
Yield Enhancement ◽  
Analysis Technique ◽  
Laser Signal ◽  
Signal Injection ◽  
Microscopy Techniques

Abstract The application of an individual failure analysis technique rarely provides the failure mechanism. More typically, the results of numerous techniques need to be combined and considered to locate and verify the correct failure mechanism. This paper describes a particular case in which different microscopy techniques (photon emission, laser signal injection, and current imaging) gave clues to the problem, which then needed to be combined with manual probing and a thorough understanding of the circuit to locate the defect. By combining probing of that circuit block with the mapping and emission results, the authors were able to understand the photon emission spots and the laser signal injection microscopy (LSIM) signatures to be effects of the defect. It also helped them narrow down the search for the defect so that LSIM on a small part of the circuit could lead to the actual defect.

scholarly journals Creative Approaches for Thermal Hot Spot Identification on Analog IC

2021 ◽  
Author(s):  
Chun Haur Khoo ◽  
Zhi Jie Lau
Keyword(s):  
Hot Spot ◽  
Photon Emission ◽  
Fault Localization ◽  
Development Stage ◽  
Semiconductor Wafer ◽  
Initial Product ◽  
Analog Ic ◽  
Laser Signal ◽  
Semiconductor Wafer Fabrication ◽  
Signal Injection

Abstract With the increase in the complexity of semiconductor wafer fabrication processes, the timing in responding and discovering the failure mechanism to a product failure at the initial product development stage or at the end of production line becomes a crucial factor. Effectively utilization the fault localization technique such as Photon Emission Microscopy (PEM), Laser Signal Injection Microscopy (LSIM) and Thermal Hotspot Localization (THS) may be significantly shortened the cycle time in the fault localization process. This paper will illustrate the creative approaches for thermal hot spot identification using modulated THS technique coupled with modified external electrical connection.

scholarly journals Fault Isolation Approaches for Nanoscale TSV Interconnects in 3D Heterogenous Integration

2021 ◽  
Author(s):  
K.J.P. Jacobs ◽  
A. Jourdain ◽  
I. De Wolf ◽  
E. Beyne
Keyword(s):  
Photon Emission ◽  
Fault Isolation ◽  
Nanometer Scale ◽  
Induced Current ◽  
Contrast Imaging ◽  
Transmission Electron ◽  
Emission Microscopy ◽  
Open Defects ◽  
Voltage Contrast ◽  
Scanning Electron

Abstract We report optical and electron beam-based fault isolation approaches for short and open defects in nanometer scale through silicon via (TSV) interconnects (180×250 nm, 500 nm height). Short defects are localized by photon emission microscopy (PEM) and optical beam-induced current (OBIC) techniques, and open defects are isolated by active voltage contrast imaging in the scanning electron microscope (SEM). We confirm our results by transmission electron microscopy (TEM) based cross sectioning.

Advanced T-LSIM System Detections using Amplified External Isolated Source-Sense Unit

2018 ◽  
Author(s):  
Zhi Jie Lau ◽  
Chris Philips
Keyword(s):  
Fault Isolation ◽  
Isolation Technique ◽  
Laser Signal ◽  
Signal Injection ◽  
Sense Unit ◽  
Types Of Faults

Abstract Thermal-Laser Signal Injection Microscopy (T-LSIM) is a widely used fault isolation technique. Although there are several T-LSIM systems on the market, each is limited in terms of the voltage and current it can produce. In this paper, the authors explain how they incorporated an Amplified External Isolated Source-Sense (AxISS) unit into their T-LSIM platform, increasing its current sourcing capability and voltage biasing range. They also provide examples highlighting the types of faults and failures that the modified system can detect.

Fault Isolation of MOL and FEOL Buried Defects Using Conductive Atomic Force Microscopy as a Complement to Passive Voltage Contrast Imaging

2017 ◽  
Author(s):  
Lucile C. Teague Sheridan ◽  
Linda Conohan ◽  
Chong Khiam Oh
Keyword(s):  
Atomic Force Microscopy ◽  
Cmos Technology ◽  
Fault Isolation ◽  
Contrast Imaging ◽  
Conductive Atomic Force Microscopy ◽  
Isolation Technique ◽  
Conductive Afm ◽  
Force Microscopy ◽  
Atomic Force ◽  
Voltage Contrast

Abstract Atomic force microscopy (AFM) methods have provided a wealth of knowledge into the topographic, electrical, mechanical, magnetic, and electrochemical properties of surfaces and materials at the micro- and nanoscale over the last several decades. More specifically, the application of conductive AFM (CAFM) techniques for failure analysis can provide a simultaneous view of the conductivity and topographic properties of the patterned features. As CMOS technology progresses to smaller and smaller devices, the benefits of CAFM techniques have become apparent [1-3]. Herein, we review several cases in which CAFM has been utilized as a fault-isolation technique to detect middle of line (MOL) and front end of line (FEOL) buried defects in 20nm technologies and beyond.

Fault Localization of Power-Ground Short via Signal Injection and Oscilloscope Technique

2010 ◽  
Author(s):  
Binh Nguyen
Keyword(s):  
Low Cost ◽  
Short Circuit ◽  
Fault Localization ◽  
Fault Isolation ◽  
Test Apparatus ◽  
Good Working ◽  
Signal Injection ◽  
Set Up ◽  
Non Destructive ◽  
Short Circuit Condition

Abstract For those attempting fault isolation on computer motherboard power-ground short issues, the optimal technique should utilize existing test equipment available in the debug facility, requiring no specialty equipment as well as needing a minimum of training to use effectively. The test apparatus should be both easy to set up and easy to use. This article describes the signal injection and oscilloscope technique which meets the above requirements. The signal injection and oscilloscope technique is based on the application of Ohm's law in a short-circuit condition. Two experiments were conducted to prove the effectiveness of these techniques. Both experiments simulate a short-circuit condition on the VCC3 power rail of a good working PC motherboard and then apply the signal injection and oscilloscope technique to localize the short. The technique described is a simple, low cost and non-destructive method that helps to find the location of the power-ground short quickly and effectively.

A Sample Preparation on Decapsulation Methodology for Effective Failure Analysis on Thin Small Leadless (TSLP) Flip Chip Package with Copper Pillar (CuP) Bump Interconnect Technology

2014 ◽  
Author(s):  
Gwee Hoon Yen ◽  
Ng Kiong Kay
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Flip Chip ◽  
Fault Localization ◽  
Cost Effective ◽  
Fault Isolation ◽  
Voltage Contrast ◽  
Interconnect Technology

Abstract Today, failure analysis involving flip chip [1] with copper pillar bump packaging technologies would be the major challenges faced by analysts. Most often, handling on the chips after destructive chemical decapsulation is extremely critical as there are several failure analysis steps to be continued such as chip level fault localization, chip micro probing for fault isolation, parallel lapping [2, 3, 4] and passive voltage contrast. Therefore, quality of sample preparation is critical. This paper discussed and demonstrated a quick, reliable and cost effective methodology to decapsulate the thin small leadless (TSLP) flip chip package with copper pillar (CuP) bump interconnect technology.

Verification of DLS Data by LVP in Case of Marginal Failure

2016 ◽  
Author(s):  
Keonil Kim ◽  
Sungjin Kim ◽  
Kunjae Lee ◽  
Kyeongju Jin ◽  
Yunwoo Lee ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Fault Location ◽  
Photon Emission ◽  
Fault Localization ◽  
Fault Isolation ◽  
The Real ◽  
Defect Isolation ◽  
The Relationship ◽  
Non Destructive

Abstract In most of the non-destructive electrical fault isolation cases, techniques such as DLS, Photon Emission, LIT, OBIRCH indicate a fault location directly. But relying on just one of these techniques for marginal failure mechanism is not enough for better fault localization. When Failure Analysis (FA) engineers encounter high NDF (No Defect Found) rates, by using only one of the techniques, they may need to consider the relationship between the responded locations by different techniques and fail phenomenon for better defect isolation. This paper talks about how a responded DLS location does not always indicate a fault location and how LVP data collected using DLS location can pin point the real defect location.

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