scholarly journals Estudo dos efeitos da dose total ionizante (TID) em um transistor comercial de lata mobilidade de elétrons (HEMT), baseado na hetroestrutura AIGaN/GaN

2020 ◽  
Author(s):  
◽  
A. C. Vilas Bôas
Keyword(s):  
High Electron Mobility Transistor ◽  
Harsh Environments ◽  
Particle Accelerators ◽  
High Electron ◽  
Electrical Characteristics ◽  
Electrical Parameters ◽  
X Ray ◽  
Gan Hemt ◽  
Gan Heterostructure ◽  
Temperature Test

This work presents a systematic study on a commercial high electron mobility transistor based on the AlGaN / GaN heterostructure (GaN HEMT). The study evaluates its robustness to different radiation doses, more specifically, its robustness to the effects of the total ionizing dose (TID) irradiated from an X-ray source with an effective energy of 10 keV. The accumulated dose varies from up to 350 krad (Si). Therefore, for this purpose, three tests were performed on the commercial transistor, GS61008T. First, the acquisition of parameters: threshold voltage (VTH), Transconductance (gm), off current (Ioff) and sub-threshold slope (S) before, during and after exposure to radiation. Then, the switching test, where the rise (tr) and fall (tf) times were aquired, pre and post irradiation, in two diffrent frequency, 100 Hz and 100 kHz. Moreover, the temperature test, where the sample varied from 223 K (-50ºC) to 348 K (75 ºC) to evaluate its robustness for the temperature variation after having accumulated 350 krad (Si). In addition, for a better understanding of the effects of TID on the sample, all tests were performed in two different polarization modes. The on mode (VGS = 3 V and VDS = 0 V), and the off mode (VGS = VDS = 0 V). The characteristic electrical parameters of the transistor were extracted using the characteristic curves IDxVD, IDxVG and IDxt. Curves, that were obtained using National Instrument’s PXI, with programmable sources and an X-ray diffractometer. The results showed that for the devices analyzed, for this GaN COTS the effects resulting from ionizing radiation (TID), with doses up to 350 krad (Si), are minimal, and also showed a quick and effective recovery of their electrical characteristics after annealing at room temperature, especially when irradiated polarized at on mode. Therefore, indicating that they are good candidates for use in harsh environments, as is the case of aerospace environments, particle accelerators environments and nuclear reactors

scholarly journals Study on Characteristics of Enhancement-Mode Gallium-Nitride High-Electron-Mobility Transistor for the Design of Gate Drivers

Electronics ◽  
2020 ◽  
Vol 9 (10) ◽  
pp. 1573
Author(s):  
Sheng-Yi Tang
Keyword(s):  
Gallium Nitride ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Experimental Results ◽  
High Electron ◽  
Electrical Characteristics ◽  
High Electron Mobility ◽  
Enhancement Mode ◽  
Gan Hemt ◽  
Source Voltage

An enhancement-mode gallium-nitride high-electron-mobility transistor (E-mode GaN HEMT) operated at high frequency is highly prone to current spikes (di/dt) and voltage spikes (dv/dt) in the parasitic inductor of its circuit, resulting in damage to the power switch. To highlight the phenomena of di/dt and dv/dt, this study connected the drain, source, and gate terminals in series with inductors (LD, LS, and LG, respectively). The objective was to explore the effects of di/dt and dv/dt phenomena and operating frequency (fS) on drain-to-source voltage (Vds), drain-to-source current (Ids), and gate-to-source voltage (Vgs). The experimental method comprised two projects: (1) establishment of a measurement system to assess the change of electrical characteristics of the E-mode GaN HEMT and (2) change of the fS and the inductances (i.e., LD, LS, and LG) in the circuit to measure the changes in Vds, Ids, and Vgs, thus summarizing the experimental results. According to the experimental results on electrical characteristics, a gate driver circuit may be designed to drive and protect the E-mode GaN HEMT while being actually applied to a 120-W synchronous buck converter with an output voltage of 12 V and an output current of 10 A.

scholarly journals Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps

Micromachines ◽  
2021 ◽  
Vol 12 (7) ◽  
pp. 751
Author(s):  
Yu-Lin Song ◽  
Manoj Kumar Reddy ◽  
Luh-Maan Chang ◽  
Gene Sheu
Keyword(s):  
Conduction Band ◽  
Computer Aided Design ◽  
Measurement Data ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Device Structure ◽  
Gan Hemt ◽  
Fixed Charges ◽  
Vertical Electric Field ◽  
Aided Design

This study proposes an analysis of the physics-based TCAD (Technology Computer-Aided Design) simulation procedure for GaN/AlGaN/GaN HEMT (High Electron Mobility Transistor) device structures grown on Si (111) substrate which is calibrated against measurement data. The presence of traps and activation energies in the device structure will impact the performance of a device, the source of traps and position of traps in the device remains as a complex exercise until today. The key parameters for the precise tuning of threshold voltage (Vth) in GaN transistors are the control of the positive fixed charges −5 × 1012 cm−2, donor-like traps −3 × 1013 cm−2 at the nitride/GaN interfaces, the energy of the donor-like traps 1.42 eV below the conduction band and the acceptor traps activation energy in the AlGaN layer and buffer regions with 0.59 eV below the conduction band. Hence in this paper, the sensitivity of the trap mechanisms in GaN/AlGaN/GaN HEMT transistors, understanding the absolute vertical electric field distribution, electron density and the physical characteristics of the device has been investigated and the results are in good agreement with GaN experimental data.

scholarly journals A New Study on the Temperature and Bias Dependence of the Kink Effects in S22 and h21 for the GaN HEMT Technology

Electronics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 353 ◽  
Author(s):  
Giovanni Crupi ◽  
Antonio Raffo ◽  
Valeria Vadalà ◽  
Giorgio Vannini ◽  
Alina Caddemi
Keyword(s):  
Short Circuit ◽  
Equivalent Circuit Model ◽  
Short Circuit Current ◽  
High Electron Mobility Transistor ◽  
Current Gain ◽  
Device Performance ◽  
High Electron ◽  
Gan Hemt ◽  
Temperature Conditions ◽  
Conventional Instrumentation

The aim of this feature article is to provide a deep insight into the origin of the kink effects affecting the output reflection coefficient (S22) and the short-circuit current-gain (h21) of solid-state electronic devices. To gain a clear and comprehensive understanding of how these anomalous phenomena impact device performance, the kink effects in S22 and h21 are thoroughly analyzed over a broad range of bias and temperature conditions. The analysis is accomplished using high-frequency scattering (S-) parameters measured on a gallium-nitride (GaN) high electron-mobility transistor (HEMT). The experiments show that the kink effects might become more or less severe depending on the bias and temperature conditions. By using a GaN HEMT equivalent-circuit model, the experimental results are analyzed and interpreted in terms of the circuit elements to investigate the origin of the kink effects and their dependence on the operating condition. This empirical analysis provides valuable information, simply achievable by conventional instrumentation, that can be used not only by GaN foundries to optimize the technology processes and, as a consequence, device performance, but also by designers that need to face out with the pronounced kink effects of this amazing technology.

Performance Enhancement of AlGaN/GaN HEMT by Optimization of Device Parameters Considering Nanometer Barrier Layer Thickness

2020 ◽  
Vol 19 (06) ◽  
pp. 2050011
Author(s):  
Yogesh Kumar Verma ◽  
Varun Mishra ◽  
Santosh Kumar Gupta
Keyword(s):  
Performance Enhancement ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Barrier Layer Thickness ◽  
Gan Hemt ◽  
Transfer Characteristics ◽  
Strong Inversion ◽  
Present Design ◽  
Device Geometry ◽  
Dimensional Electron Gas

The two-dimensional electron gas (2DEG) at the heterointerface of AlGaN and GaN is a complicated transcendental function of gate voltage, so an analytical charge control model for AlGaN/GaN high electron mobility transistor (HEMT) is presented accounting for all the three regions of operation (i.e., sub-threshold, moderate, and strong-inversion region). In addition to it, the performance of AlGaN/GaN HEMT is highly dependent on the device geometry. Therefore, to get the optimum performance of the device it is advisable to optimize the parameters governing the device geometry. Accordingly, the output and transfer characteristics, threshold voltage, ON current, OFF current, and transconductance are calculated using numerical computations. The present design is tested to calculate the voltage transfer characteristics (VTC) and transient characteristics of the invertor circuit, after the optimization of the device parameters.

A differential extended gate-AlGaN/GaN HEMT sensor for real-time detection of ionic pollutants

2019 ◽  
Vol 11 (31) ◽  
pp. 3981-3986 ◽  
Author(s):  
Lei Zhao ◽  
Xinsheng Liu ◽  
Bin Miao ◽  
Zhiqi Gu ◽  
Jin Wang ◽  
...  
Keyword(s):  
Real Time ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Real Time Detection

In this study, we propose a differential extended gate (DEG)-AlGaN/GaN high electron mobility transistor (HEMT) sensor to detect ionic pollutants in solution.

Effect of GaN Cap Layer on the Electrical Properties of AlGaN/GaN HEMT

2012 ◽  
Vol 217-219 ◽  
pp. 2393-2396 ◽  
Author(s):  
Han Guo ◽  
Wu Tang ◽  
Wei Zhou ◽  
Chi Ming Li
Keyword(s):  
Electrical Properties ◽  
Doping Concentration ◽  
Cutoff Frequency ◽  
High Electron Mobility Transistor ◽  
Current Gain ◽  
High Electron ◽  
Saturation Current ◽  
Gan Hemt ◽  
Cap Layer ◽  
Dimensional Electron Gas

The electrical properties of AlGaN/GaN heterojunction high electron mobility transistor (HEMT) are simulated by using sentaurus software. This paper compares two structures, the HEMT with GaN cap layer and the HEMT without GaN cap layer. The sentaurus software simulates the DC and AC characteristics of the two AlGaN/GaN HEMT structures. The HEMT with GaN cap layer can increase the maximum transconductance gm from 177ms/mm to 399ms/mm when the doping concentration of the cap layer is 3×1018cm-3 compared with the other structure under the same conditions. The simulation results indicate that the HEMT with cap layer can increase maximum transconductance gm, saturation current Ids, current-gain cutoff frequency fT, maximum oscillation frequency fmax and reduce the series resistance of the drain to source compared with the HEMT without GaN cap layer. The large Ids of the HEMT with cap layer is attributed to the increase of the concentration of two dimensional electron gas (2DEG). Moreover, the change of the doping concentration of the cap layer will affect the gm and Ids.

Thermally stable transparent Ru-Si-O Schottky contacts for n-type GaN and AlGaN

2004 ◽  
Vol 831 ◽  
Author(s):  
E. Kaminska ◽  
A. Piotrowska ◽  
K. Golaszewska ◽  
R. Lukasiewicz ◽  
A. Szczesny ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
High Power ◽  
Schottky Contacts ◽  
Electrical Characteristics ◽  
Thermal Reliability ◽  
Uv Detectors ◽  
Gate Electrodes ◽  
Gan Hemt ◽  
Gan Heterostructure

ABSTRACTWe have developed the deposition and studied the electrical characteristics and thermal reliability of Ru-based contacts on n- type GaN as well as on AlGaN/GaN heterostructure. Amorphous, conducting and transparent RuSiO4 contacts with their extremely low reverse currents and thermal stability up to 900°C, show great potential for use as Schottky contacts to n-type GaN and gate electrodes for AlGaN/GaN HEMT in high temperature, high power applications as well as in UV detectors.

scholarly journals Highly sensitive extended gate-AlGaN/GaN high electron mobility transistor for bioassay applications

RSC Advances ◽  
2017 ◽  
Vol 7 (88) ◽  
pp. 55835-55838 ◽  
Author(s):  
Xiangzhen Ding ◽  
Bin Miao ◽  
Zhiqi Gu ◽  
Baojun Wu ◽  
Yimin Hu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Sensitivity ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Highly Sensitive

An extended gate-AlGaN/GaN high electron mobility transistor (EG-AlGaN/GaN HEMT) with a high sensitivity for bioassay has been developed.

scholarly journals Side Effects in a HEMT Performance with InAlN/GaN

2015 ◽  
Vol 15 (2) ◽  
pp. 249
Author(s):  
Z. Kourdi ◽  
B. Bouazza ◽  
A. Guen-Bouazza ◽  
M. Khaouani
Keyword(s):  
Side Effects ◽  
Current Density ◽  
High Frequency ◽  
Density Ratio ◽  
High Electron Mobility Transistor ◽  
Maximum Efficiency ◽  
High Electron ◽  
X Band ◽  
Cutting Frequency ◽  
Gan Heterostructure

<p class="Abstract">We present a simulation of a HEMT (high electron mobility transistor) structure. We extract the device characteristics through the analysis of DC, AC and high frequency regimes, as shown in this paper. This work demonstrates the optimal device with a gate length of 30<span style="text-decoration: underline;"> nm</span>, and InAlN/GaN heterostructure for minimizing side effects. The simulated with Silvaco software of the HEMT devices with the materials InAlN show very good scalability in different application. We have demonstrated an excellent current density, as high as 644 mA/mm, a peak extrinsic transconductance of 710 mS/mm at V<sub>DS</sub>=2 <span style="text-decoration: underline;">V</span>, and cutting frequency cutoffs of 385 GHZ, maximum frequency of 810 GHz, maximum efficiency of 23% for x-Band, maximum breakdown voltage of 365 <span style="text-decoration: underline;">V</span>, and an ON/OFF current density ratio higher than 8 x 10<sup>8</sup>. These values were determined through the simulation by hydrodynamics models, which makes that optimize the design is the future of this technology.</p>

scholarly journals High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN

Energies ◽  
2021 ◽  
Vol 14 (19) ◽  
pp. 6098
Author(s):  
Gwen Rolland ◽  
Christophe Rodriguez ◽  
Guillaume Gommé ◽  
Abderrahim Boucherif ◽  
Ahmed Chakroun ◽  
...  
Keyword(s):  
High Electron Mobility Transistor ◽  
Device Performance ◽  
High Electron ◽  
Chemical Beam Epitaxy ◽  
High Electron Mobility ◽  
Device Failure ◽  
Gan Hemt ◽  
Silvaco Atlas ◽  
P Type ◽  
The Impact

In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy). The impact of the p doping on the device performance is investigated using TCAD simulator (Silvaco/Atlas). With 4E17 cm−3 p doping, a Vth of 1.5 V is achieved. Four terminal breakdowns of the fabricated device are investigated, and the origin of the device failure is identified.

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