scholarly journals English Effect of Activated Variations Carbon from Oil Palm Empty Fruit Bunch to Solar Cell Efficiency p-n Junction Layer Cu2O-TiO2.

2020 ◽  
Vol 5 (1) ◽  
pp. 44-49
Author(s):  
Rahmawati ◽  
Saparudin ◽  
Teuku Andi Fadly
Keyword(s):  
Solar Cells ◽  
Activated Carbon ◽  
Solar Cell ◽  
Oil Palm ◽  
Short Circuit ◽  
Open Circuit ◽  
Empty Fruit Bunch ◽  
X Ray Diffraction ◽  
Solar Cell Efficiency ◽  
Cell Efficiency

Research about influence effect of activated activated carbon from oil palm empty fruit bunch to solar cell efficiency p-n junction layer Cu2O-TiO2 and direct of sunlight. The layer of Cu2O formed from copper (Cu) burned with temperature 550  ͦ C in 100 minutes. The solar cells are made with TiO2  layer composed of activated carbon from oil palm empty fruit bunch of 0%, 10%, 15%, dan 20%. The parameters of the solar cell can be obtained by measuring the short circuit (Isc), voltage open circuit (Voc), maximum power and Fill Factor (FF) with resitor value (R) 0-50 kΩ. The  composed of TiO2 /activated carbon from oil palm empty fruit bunch analyzed using X-Ray Diffraction (XRD) and and Fourier Transform Infrared (FTIR) Spectrocopy. As a result addition of activated carbon from oil palm empty fruit bunch to solar cell efficiency is increase in the value, voltage and efficiency of solar cells. The results of the measurement of the highest efficiency of solar cells using a sun simulator and sunlight are found in variations of activated carbon 20%, with each efficiency values 0,043% and 0,0018%.

scholarly journals CdTe-Based Thin Film Solar Cells: Past, Present and Future

Energies ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1684
Author(s):  
Alessandro Romeo ◽  
Elisa Artegiani
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Early Years ◽  
Solar Cell Efficiency ◽  
Cell Efficiency

CdTe is a very robust and chemically stable material and for this reason its related solar cell thin film photovoltaic technology is now the only thin film technology in the first 10 top producers in the world. CdTe has an optimum band gap for the Schockley-Queisser limit and could deliver very high efficiencies as single junction device of more than 32%, with an open circuit voltage of 1 V and a short circuit current density exceeding 30 mA/cm2. CdTe solar cells were introduced at the beginning of the 70s and they have been studied and implemented particularly in the last 30 years. The strong improvement in efficiency in the last 5 years was obtained by a new redesign of the CdTe solar cell device reaching a single solar cell efficiency of 22.1% and a module efficiency of 19%. In this paper we describe the fabrication process following the history of the solar cell as it was developed in the early years up to the latest development and changes. Moreover the paper also presents future possible alternative absorbers and discusses the only apparently controversial environmental impacts of this fantastic technology.

scholarly journals Junction Configuration Effects on the Photovoltaic Parameters of a-Si/CZTS Solar Cells

2022 ◽  
Author(s):  
H. Bitam ◽  
B. Hadjoudja ◽  
Beddiaf Zaidi ◽  
C. Shakher ◽  
S. Gagui ◽  
...  
Keyword(s):  
Renewable Energy ◽  
Solar Cells ◽  
Solar Cell ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Photovoltaic Devices ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Reported Study ◽  
Stated Problem

Due to increased energy intensive human activities resulting accelerated demand for electric power coupled with occurrence of natural disasters with increased frequency, intensity, and duration, it becomes essential to explore and advance renewable energy technology for sustainability of the society. Addressing the stated problem and providing a radical solution has been attempted in this study. To harvest the renewable energy, among variety of solar cells reported, a composite a-Si/CZTS photovoltaic devices has not yet been investigated. The calculated parameters for solar cell based on the new array of layers consisting of a-Si/CZTS are reported in this study. The variation of i) solar cell efficiency as a function of CZTS layer thickness, temperature, acceptor, and donor defect concentration; ii) variation of the open circuit current density as a function of temperature, open circuit voltage; iii) variation of open circuit voltage as a function of the thickness of the CZTS layer has been determined. There has been no reported study on a-Si/CZTS configuration-based solar cell, analysis of the parameters, and study to address the challenges imped efficiency of the photovoltaic device and the same has been discussed in this work. The value of the SnO2/a-Si/CZTS solar cells obtained from the simulation is 23.9 %.

scholarly journals Erythrosine and Rhodamine Dyes as a Solar Cell Concentrator

2019 ◽  
Vol 54 (4) ◽  
Author(s):  
Suhad Hassan Mohsen ◽  
Luma Hafedh Abed Oneizah ◽  
Warood Kream Alaarage
Keyword(s):  
Solar Cell ◽  
Fill Factor ◽  
Organic Dyes ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Photovoltaic Cell ◽  
Open Circuit ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Rhodamine Dyes

In this work, a solar and flash center was created by combining two organic dyes, erythrosine and rhodamine, with completely different concentrations. Throughout the spectra of fluorescence (F) and absorbance (A), the quantitative efficiency of the dye mixture was determined. It was manufactured from a panel of epoxy containing a mixture of the two dyes using open-circuit voltage (Voc), short-circuit current (Isc), fill factor (FF), and solar cell efficiency (η). It was found that a 1 mm thickness of the panel works best in increasing the efficiency of the photovoltaic cell.

scholarly journals Simulation Effect of Ga2O3 layer thickness on CdTe solar cell by SCAPS-1D

2019 ◽  
Vol 24 (6) ◽  
pp. 110
Author(s):  
Adnan Alwan Mouhammed ◽  
Ayed N. Saleh
Keyword(s):  
Optical Properties ◽  
Solar Cell ◽  
Oxide Layer ◽  
Gallium Oxide ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Open Circuit ◽  
Solar Cell Efficiency ◽  
Cell Efficiency

The effect of Ga2O3 thickness on CdTe cells was studied using the SCAPS-1D simulator. The best solar cell efficiency (14.65%) was found at the thickness of the gallium oxide layer (1-10nm) and the cell efficiency (η) decrease with an increase in the thickness of the oxide layer and the decrease of the fill factor, thus decreasing the voltage current (I-V) and decreasing the current of the short circuit (Isc). The value of the open circuit voltage (VOC) is approximately constant and at 0.76V. The optical properties of the cell of quantitative efficiency are 86% and decrease within 18nm   http://dx.doi.org/10.25130/tjps.24.2019.116

scholarly journals The Effects Of N-GaAs Substrate Orientations on The Electrical Performance of PANI/N-GaAs Hybrid Solar Cell Devices

2020 ◽  
Vol 8 (4) ◽  
pp. 149-153
Author(s):  
Haveen A. Mustafa ◽  
Dler A. Jameel ◽  
Hussien I. Salim ◽  
Sabah M. Ahmed
Keyword(s):  
Solar Cell ◽  
Current Density ◽  
Gaas Substrate ◽  
Room Temperature ◽  
Short Circuit ◽  
Open Circuit ◽  
Hybrid Solar Cell ◽  
Electrical Performance ◽  
Solar Cell Efficiency ◽  
Cell Efficiency

This paper reports the fabrication and electrical characterization of hybrid organic-inorganic solar cell based on the deposition of polyaniline (PANI) on n-type GaAs substrate with three different crystal orientations namely Au/PANI/(100) n-GaAs/(Ni-Au), Au/PANI/(110) n-GaAs/(Ni-Au), and Au/PANI/(311)B n-GaAs/(Ni-Au) using spin coating technique. The effect of crystallographic orientation of n-GaAs on solar cell efficiency of the hybrid solar cell devices has been studied utilizing current density-voltage (J-V) measurements under illumination conditions. Additionally, the influence of planes of n-GaAs on the diode parameters of the same devices has been investigated by employing current-voltage (I-V) characteristics in the dark conditions at room temperature. The experimental observations showed that the best performance was obtained for solar cells fabricated with the structure of Au/PANI/(311)B n-GaAs/(Ni-Au). The open-circuit voltage (Voc), short circuit current density (Jsc), and solar cell efficiency () of the same device were shown the values of 342 mV, 0.294 mAcm-2, 0.0196%, respectively under illuminated condition. All the solar cell characteristics were carried out under standard AM 1.5 at room temperature. Also, diode parameters of PANI/(311)B n-GaAs heterostructures were calculated from the dark I-V measurements revealed the lower reverse saturation current (Io) of 3.0×10-9A, higher barrier height () of 0.79 eV and lower ideality factor (n) of 3.16.

Lock-in Thermography-Based Local Efficiency Analysis of Solar Cells

2012 ◽  
Author(s):  
Otwin Breitenstein
Keyword(s):  
Solar Cells ◽  
Short Circuit ◽  
Efficiency Analysis ◽  
Open Circuit ◽  
Local Defect ◽  
Whole Cell ◽  
Local Efficiency ◽  
Cell Efficiency ◽  
Lock In ◽  
Efficiency Data

Abstract The electronic properties of solar cells, particularly multicrystalline silicon-based ones, are distributed spatially inhomogeneous, where regions of poor quality may degrade the performance of the whole cell. These inhomogeneities mostly affect the dark current-voltage (I-V) characteristic, which decisively affects the efficiency. Since the grid distributes the local voltage homogeneously across the cell and leads to lateral balancing currents, local light beam-induced current methods alone cannot be used to image local cell efficiency parameters. Lock-in thermography (LIT) is the method of choice for imaging inhomogeneities of the dark I-V characteristic. This contribution introduces a novel method for evaluating a number of LIT images taken at different applied biases. By pixel-wise fitting the data to a two diode model and taking into account local series resistance and short circuit current density data, realistically simulated images of the other cell efficiency parameters (open circuit voltage, fill factor, and efficiency) are obtained. Moreover, simulated local and global dark and illuminated I-V characteristics are obtained, also for various illumination intensities. These local efficiency data are expectation values, which would hold if a homogeneous solar cell had the properties of the selected region of the inhomogeneous cell. Alternatively, also local efficiency data holding for the cell working at its own maximum power point may be generated. The amount of degradation of different cell efficiency parameters in some local defect positions is an indication how dangerous these defects are for degrading this parameter of the whole cell. The method allows to virtually 'cut out' certain defects for checking their influence on the global characteristics. Thus, by applying this method, a detailed local efficiency analysis of locally inhomogeneous solar cells is possible. It can be reliably predicted how a cell would improve if certain defects could be avoided. This method is implemented in a software code, which is available.

scholarly journals GaInP/GaAs/poly-Si Multi-Junction Solar Cells by in Metal Balls Bonding

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 726
Author(s):  
Ray-Hua Horng ◽  
Yu-Cheng Kao ◽  
Apoorva Sood ◽  
Po-Liang Liu ◽  
Wei-Cheng Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Low Temperature ◽  
Triple Junction ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Metal Line ◽  
Solar Simulator ◽  
Junction Solar Cell

In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.

17.8%-efficient Amorphous Silicon Heterojunction Solar Cells on p-type Silicon Wafers

2006 ◽  
Vol 910 ◽  
Author(s):  
Qi Wang ◽  
Matt P. Page ◽  
Eugene Iwancizko ◽  
Yueqin Xu ◽  
Yanfa Yan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
High Efficiency ◽  
Short Circuit ◽  
Open Circuit ◽  
Layer Growth ◽  
Surface Recombination Velocity ◽  
Back Contact ◽  
P Type

AbstractWe have achieved an independently-confirmed 17.8% conversion efficiency in a 1-cm2, p-type, float-zone silicon (FZ-Si) based heterojunction solar cell. Both the front emitter and back contact are hydrogenated amorphous silicon (a-Si:H) deposited by hot-wire chemical vapor deposition (HWCVD). This is the highest reported efficiency for a HWCVD silicon heterojunction (SHJ) solar cell. Two main improvements lead to our most recent increases in efficiency: 1) the use of textured Si wafers, and 2) the application of a-Si:H heterojunctions on both sides of the cell. Despite the use of textured c-Si to increase the short-circuit current, we were able to maintain the same 0.65 V open-circuit voltage as on flat c-Si. This is achieved by coating a-Si:H conformally on the c-Si surfaces, including covering the tips of the anisotropically-etched pyramids. A brief atomic H treatment before emitter deposition is not necessary on the textured wafers, though it was helpful in the flat wafers. It is essential to high efficiency SHJ solar cells that the emitter grows abruptly as amorphous silicon, instead of as microcrystalline or epitaxial Si. The contact on each side of the cell comprises a thin (< 5 nm) low substrate temperature (~100°C) intrinsic a-Si:H layer, followed by a doped layer. Our intrinsic layers are deposited at 0.3-1.2 nm/s. The doped emitter and back-contact layers were deposited at a higher temperature (>200°C) and grown from PH3/SiH4/H2 and B2H6/SiH4/H2 doping gas mixtures, respectively. This combination of low (intrinsic) and high (doped layer) growth temperatures was optimized by lifetime and surface recombination velocity measurements. Our rapid efficiency advance suggests that HWCVD may have advantages over plasma-enhanced (PE) CVD in fabrication of high-efficiency heterojunction c-Si cells; there is no need for process optimization to avoid plasma damage to the delicate, high-quality, Si wafers.

Study of Photoelectrochemical Solar Cell Using WSe2 Crystal

2013 ◽  
Vol 665 ◽  
pp. 330-335 ◽  
Author(s):  
Ripal Parmar ◽  
Dipak Sahay ◽  
R.J. Pathak ◽  
R.K. Shah
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Fill Factor ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Electrical Energy ◽  
Open Circuit ◽  
Cell Parameters ◽  
Photoelectrochemical Solar Cell ◽  
Photoelectrochemical Solar Cells

The solar cells have been used as most promising device to convert light energy into electrical energy. In this paper authors have attempted to fabricate Photoelectrochemical solar cell with semiconductor electrode using TMDCs. The Photoelectrochemical solar cells are the solar cells which convert the solar energy into electrical energy. The photoelectrochemical cells are clean and inexhaustible sources of energy. The photoelectrochemical solar cells are fabricated using WSe2crystal and electrolyte solution of 0.025M I2, 0.5M NaI, 0.5M Na2SO4. Here the WSe2crystals were grown by direct vapour transport technique. In our investigations the solar cell parameters like short circuit current (Isc) and Open circuit voltage (Voc) were measured and from that Fill factor (F.F.) and photoconversion efficiency (η) are investigated. The results obtained shows that the value of efficiency and fill factor of solar cell varies with the illumination intensities.

Modeling of Abnormal Hysteresis in CsPbBr3 based Perovskite Solar Cells

2021 ◽  
Vol 34 (1) ◽  
pp. 01-08
Author(s):  
B GopalKrishna ◽  
Sanjay Tiwari
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Simulation Study ◽  
Open Circuit Voltage ◽  
Layer Structure ◽  
Short Circuit ◽  
Perovskite Solar Cells ◽  
Perovskite Solar Cell ◽  
Open Circuit ◽  
Perovskite Layer

Perovskite solar cells are emerging photovoltaic devices with PCE of above 25%. Perovskite are suitable light absorber materials in solar cells with excellent properties like appropriate band gap energy, long carrier lifetime and diffusion length, and high extinction coefficient. Simulation study is an important technique to understand working mechanisms of perovskites solar cells. The study would help develop efficient, stable PSCs experimentally. In this study, modeling of perovskite solar cell was carried out through Setfos software. The optimization of different parameters of layer structure of solar cell would help to achieve maximum light absorption in the perovskite layer of solar cell. Simulation study is based drift-diffusion model to study the different parameters of perovskite solar cell. Hysteresis is one of the factors in the perovskite solar cell which may influence the device performance. The measurement of abnormal hysteresis can be done by current-voltage curve during backward scan during simulation study. In backward scan, the measurement starts from biasing voltage higher than open circuit voltage and sweep to voltage below zero. The numerical simulation used to study the various parameters like open circuit voltage, short circuit current, fill factor, power conversion efficiency and hysteresis. The simulation results would help to understand the photophysics of solar cell physics which would help to fabricate highly efficient and stable perovskite solar cells experimentally.

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