Electrical Characteristics of Different Gate Geometry of FinFET
2016 ◽
Vol 705
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pp. 174-178
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Keyword(s):
This paper proposed to the electrical characteristics of difference gate geometry of FinFET. Four of difference gate structure have been designed and simulated by GTS Framework TCAD software which is simulation the characteristics of FinFET device include drain current-voltage, threshold voltage and subthreshold swing. Then, the electrical characteristics was compared. From the result found that the drain current depend on gate geometry of FinFET. The largest gate geometry of FinFET device was the rectangle shape with gate width at 66 nm, IDS about 19.8 mA and VTH = 0.5 V and the smallest gate geometry, the triangle shape with gate width at 52 nm and give IDS about 8.5 mA and Vth = 0.5 V.
2012 ◽
Vol 717-720
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pp. 1059-1064
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Keyword(s):
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2010 ◽
Vol 645-648
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pp. 681-684
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Keyword(s):
2009 ◽
Vol 615-617
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pp. 753-756
Keyword(s):
2015 ◽
Vol 15
(10)
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pp. 7467-7471
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