scholarly journals Influence of N2 doping on photodective properties of p-typed Zn-N co-doped SnO2/n-Si heterojunction

2021 ◽  
Vol 5 (2) ◽  
pp. first
Author(s):  
Tran Le ◽  
Huu Phuc Dang
Keyword(s):  
Crystal Structure ◽  
Electrical Properties ◽  
Optical Sensors ◽  
High Sensitivity ◽  
Hole Mobility ◽  
X Ray Diffraction ◽  
Rutile Structure ◽  
X Ray ◽  
Co Doping ◽  
Co Doped

This work studied the effects of Zn and N co-doping on the crystal structure, electrical properties, and photoelectric effects of p-typed Zn-N co-doped SnO2/n-Si heterojunction. Zn and N co-doped SnO2 films (ZNTO) were deposited on n-type Si substrates at 300oC in different sputtering gas mixture Ar/N2 (% N = 0%, 30%, 50%, 60%, 70 % and 80%) from 5 wt% ZnO doped SnO2 target by the DC magnetron sputtering method. The crystal structure, surface morphology, chemical composition, electrical properties, and photoelectric effects of ZNTO films were investigated by measurements such as X-ray diffraction, FESEM, AFM, EDS, Hall, and I-V. The results showed that all films had a rutile structure, and the SnO2 (101) reflection was dominant on the optimal fabrication of 70% N2. Substitution of Sn4+ by Zn2+ and O2􀀀 by N3􀀀 were determined by the X-ray diffraction pattern (XRD) and X-ray energy scattering spectrum (EDS). The lowest resistivity for the ZNTO-5-70 film was r= 6.5010􀀀2 W.cmwith carrier concentration n = 1.461019 cm􀀀3 and hole mobility m = 6.52 cm2.V􀀀1.s􀀀1 respectively. I-V characteristics of the p – ZNTO – 5 – y/n – Si under the illumination condition showed the p-type electrical properties and their application as optical sensors. The ZNTO – 5 – y films' optical response current characteristic had high sensitivity and good reproducibility.

scholarly journals Influence of thickness on the structure and electrical, optical properties of N-doped SnO2 film

2020 ◽  
Vol 2 (4) ◽  
pp. 240-245
Author(s):  
Nguyen Thanh Tung ◽  
Phuc Huu Dang ◽  
Tran Le
Keyword(s):  
Refractive Index ◽  
Electrical Properties ◽  
Optical Sensors ◽  
Extinction Coefficient ◽  
Optical Constants ◽  
Hole Mobility ◽  
X Ray Diffraction ◽  
Mixed Gas ◽  
X Ray ◽  
P Type

N-doped SnO2 films with varying thickness (320, 420, 520, 620, and 720 nm) were deposited at 300oC in mixed – gas sputtering Ar/N (1:1) using DC magnetron sputtering. Influence of thickness on structure, optical constants (refractive index or extinction coefficient), and electrical properties were investigated by methods such as X-ray diffraction, Uv-Vis spectra, and Hall measurement. The results show that crystalline quality and optical constants improve with increasing thickness. Specifically, NTO – 620 film has the best crystal structure and maximum values ​​such as crystal size, refractive index, and carrier mobility, as well as the lowest extinction coefficient. Also, NTO films have a cubic structure with (111) peak as the preferred peak. Besides, the hole mobility increases with the increase of the thickness and reaches the maximum value of 14.95 cm2V-1s-1 for NTO – 620 films. The electrical properties of p-type NTO films were verified by X-ray electron spectroscopy (XPS) and I-V characteristic of p – NTO/n – Si heterojunction under illumination. P-type NTO – 620 films were fabricated on n-type Si substrate had a light-to-dark current ratio of 58 at - 6V, these results showed that p-type NTO films might have a promising future in optical sensors applications.

High-performance electrical properties of La-based perovskite ceramics for the functional phase of thick film resistors

2020 ◽  
Author(s):  
Yongcheng Lu ◽  
Yuanxun Li ◽  
Daming Chen ◽  
Rui Peng ◽  
Qinghui Yang ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Electrical Properties ◽  
Thick Film ◽  
High Performance ◽  
Composite Ceramics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Alternative Material ◽  
Perovskite Ceramics ◽  
Scanning Electron

Abstract In order to explore an economical functional phase alternative material for thick film resistors, the crystal structure, microstructure, and electrical properties of (1-x)LSCN + xLCNZ (x = 0.0–1.0) composite ceramics were studied through solid-state reaction experiments. The composite ceramics were characterized by x–ray diffraction, scanning electron microscopy, energy dispersive x–ray spectroscopy, and DC four–probe method. Results suggested that the main phases of LSCN and LCNZ were formed, along with a small part of impurity phases. The addition of LCNZ to LSCN decreased the electrical conductivity and changed the TCR from positive to negative. Zero TCR could be achieved around 0.6 < x < 0.8 and relatively low absolute TCR values could be obtained for the samples of 0.4 ≤ x ≤ 0.8. The ceramic of 0.6LSCN + 0.4LCNZ showed the optimal performances of conductivity = 1923 S/cm, TCR = 379.54 ppm/℃, and relative density = 95.05%.

Electrical Properties of Multilayer Synthesized CuInSi Thin Film

2011 ◽  
Vol 383-390 ◽  
pp. 822-825
Author(s):  
Ping Luan ◽  
Jian Sheng Xie ◽  
Jin Hua Li
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Time Effect ◽  
X Ray Diffraction ◽  
Testing Instrument ◽  
X Ray ◽  
Conductivity Type

Using magnetron sputtering technology, the CuInSi thin films were prepared by multilayer synthesized method. The structure of CuInSi films were detected by X-ray diffraction(XRD), the main crystal phase peak is at 2θ=42.458°; The resistivity of films were measured by SDY-4 four-probe meter; The conductive type of the films were tested by DLY-2 conductivity type testing instrument. The results show that the annealing temperature and time effect on the crystal resistivity and crystal structure greatly.

Structural and Electrical Properties of (Cu, Co) Co-Doped ZnO Thin Film

2013 ◽  
Vol 774-776 ◽  
pp. 964-967
Author(s):  
Ping Cao ◽  
Yue Bai
Keyword(s):  
Electrical Properties ◽  
Sol Gel ◽  
Hall Effect Measurement ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Co Doping ◽  
Structural And Electrical Properties ◽  
Doped Zno ◽  
Cu Ions ◽  
Co Doped

Successful synthesis of Cu, Co co-doped ZnO film is obtained by sol-gel method. The structural and electrical properties of the sample were investigated. X-ray diffraction spectroscopy analyses indicate that the Co and Cu co-doping can not disturb the structure of ZnO. No additional peaks are observed in the Zn0.99Co0.01CuxO and Cu+ and Co2+ substitute for Zn2+ without changing the wurtzite structure. By Hall-effect measurement p-type conductivity was observed for the Cu co-doped film. XPS result confirmed Cu ions are univalent in the films.

scholarly journals Correlation of Electrical Properties With Defects in A Homoepitaxial Chemical-Vapor-Deposited Diamond

1995 ◽  
Vol 416 ◽  
Author(s):  
S. Han ◽  
G. Rodriguez ◽  
A. Taylori ◽  
M. A. Plano ◽  
M. D. Moyer ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Diamond Film ◽  
Carrier Transport ◽  
Defect Density ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Limiting Factor ◽  
X Ray Diffraction ◽  
Density Region ◽  
X Ray

ABSTRACTA high-quality, low-stress 200 gim epitaxial diamond film has been grown on a 400 μm thick high-temperature-high-pressure Ila diamond. X-ray diffraction images of the film indicate that a large region of the film is fairly defect free and individual dislocations have been imaged in this region. Depth-resolved Raman results indicate that the region of the film with a low density of defects also has lower stress than in the higher defect density region. Transient photoconductivity measurements were performed on the high and low line defect density regions of the homoepitaxial diamond film to determine the effects of the stress and defect density on the combined electron-hole mobility and carrier lifetime. The correlation between the electrical properties and the x-ray diffraction imaging suggests that line defects may not be the limiting factor in the carrier transport at the present film quality

Up-Conversion Luminescence Properties of Ho3+ Doped and Yb3+/Ho3+ Co-Doped Y2WO6 Phosphors

2017 ◽  
Vol 727 ◽  
pp. 618-622 ◽  
Author(s):  
Xue Dong Gao ◽  
Deng Hui Xu ◽  
Yao Hui Zhu ◽  
Zai Fa Yang ◽  
Jiang Nan Du ◽  
...  
Keyword(s):  
High Temperature ◽  
Pump Power ◽  
Energy Level ◽  
Visible Region ◽  
X Ray Diffraction ◽  
X Ray ◽  
Co Doping ◽  
Two Photon ◽  
Photon Process ◽  
Co Doped

In this article, Ho3+ doped and Yb3+/ Ho3+ co-doped Y2WO6 phosphors were successfully prepared via high temperature solid method. Their structures were investigated with X-ray diffraction, the up-conversion (UC) excitation from a 980 nm diode laser, and the developed phosphor shown two UC emission bands in the visible region 540 and 643 nm. Based on the result, the intensity of the frequency up-conversion emission was enhanced significantly through co-doping with Yb3+ ions in the Y2WO6: Ho3+ phosphor. The dependence of emission intensity on the pump power indicated that the up-conversion emission was a two-photon process. At last, the energy level diagrams was discussed. The results show that Y2WO6 is a promising host material for UC phosphors.

scholarly journals ENHANCED FERROELECTRICITY AND FERROMAGNETISM OF (Y, Ni) CO-DOPED BiFeO3 MATERIALS

2018 ◽  
Vol 56 (1A) ◽  
pp. 219
Author(s):  
Dao Viet Thang
Keyword(s):  
Ferroelectric Properties ◽  
Sol Gel ◽  
Rhombohedral Structure ◽  
Ferromagnetic Behavior ◽  
X Ray Diffraction ◽  
X Ray ◽  
Co Doping ◽  
Saturation Polarization ◽  
Perovskite Type ◽  
Co Doped

In this study, multiferroicMultiferroic Bi1-xYxFe0.975Ni0.025O3 (x = 0.00, 0.05, 0.10, and 0.15) called as (Y, Ni)                co-doped BiFeO3 materials were synthesized by a sol-gel method.  and characterized by X-ray diffraction diagrams and(XRD), energy-dispersive X-ray (EDX) and vibrating sample magnetization (VSM) measurements demonstrated. The result showed that Bi1-xYxFe0.975Ni0.025O3all investigated materials waspresent a single phase of the perovskite-type rhombohedral structure. Ferromagnetism and ferroelectricity of the Bi1-xYxFe0.975Ni0.025O3 materials have been investigated. Results showed that the co-doping by (Y, Ni) for (Bi, Fe)  have affected in enhancing by the (Y, Ni) co-doping, as a result the ferroelectric polarization and magnetization of BiFeO3. The magnetic characterization indicated that the ferromagnetic behavior wasthe initial BiFeO3 materialwere enhanced with increasing concentration of Y3+ for (Y, Ni) co-substituted of BiFeO3. Which could beion. It is attributed to the defferentdifference of the magnetic momentmoments of Ni2+ and Fe3+, and+ ions, as well as the Y3+-Fe3+,+ and Y3+-Ni2+ super-exchange interaction. Theinteractions. The characteristics of the investigated materials, such as remanent magnetization (Mr), saturation magnetization (Ms), remanent polarization (2Pr) and saturation polarization (2Ps) continuously increase upon increasing in the range of x from 0.00 to 0.15. When x = 0.15, the values of Mr and Ms are 0.078 and 0.794 emu/g, respectively. The values of 2Pr and 2Ps are 16.58 and 27.99 µC/cm2, respectively. Origin of ferromagnetic and ferroelectric properties of Bi1-xYxFe0.975Ni0.025O3 materials will be discussed in this paper.

STRUCTURE AND MAGNETIC PROPERTIES OF Co-DOPED SnO2 NANOWIRES

2011 ◽  
Vol 10 (04n05) ◽  
pp. 967-971 ◽  
Author(s):  
U. K. GOUTAM ◽  
SHASHWATI SEN ◽  
JAGANNATH ◽  
A. K. SINGH ◽  
R. MUKUND ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Magnetic Measurements ◽  
Ferromagnetic Behavior ◽  
Tubular Furnace ◽  
X Ray Diffraction ◽  
X Ray ◽  
Co Doping ◽  
Sno2 Nanowires ◽  
Tin Metal ◽  
Co Doped

Co -doped SnO2 nanowires were grown by thermal evaporation of a mixture of Tin metal powder and CoCl2 · 6H2O in a tubular furnace. The growth occurs by vapor–solid growth mechanism. Nanowires grew along the sidewall of the alumina boat placed in the tubular furnace and the diameter of these nanowires (as was evident from scanning electron microscopy), was found to be in the range of 50 nm to 200 nm. Co was successfully doped in SnO2 lattice as revealed by X-ray diffraction data and was found to be in Co2+ state in the nanowires as detected by X-ray Photoelectron Spectroscopy measurements. Room temperature magnetic measurements, carried out using Vibrating Sample Magnetometer, indicated ferromagnetic behavior of the nanowires indicating their potential for spintronics applications. With increasing Co doping (upto 1%), the lattice parameters of SnO2 decreased and the saturation magnetization increased, suggesting a strong structure-magnetic property relationship.

Effect of N and P codoping on ZnO properties

2013 ◽  
Vol 645 ◽  
pp. 64-67 ◽  
Author(s):  
Jin Zhong Wang ◽  
Elangovan Elamurugu ◽  
Hong Tao Li ◽  
Shu Jie Jiao ◽  
Lian Cheng Zhao ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Atomic Ratio ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Nitrogen And Phosphorus ◽  
X Ray ◽  
Co Doping ◽  
Glass Substrates ◽  
Doped Zno ◽  
Co Doped

Nitrogen and Phosphorus co-doped (N+P)- zinc oxide (ZnO) films were RF sputtered on corning glass substrates at 350 °C and comparatively studied with undoped, N-, and P- doped ZnO. X-ray diffraction spectra confirmed that the ZnO structure with a preferred orientation along direction. Scanning electron microscope analysis showed different microstructure for the N+P co-doping, and thus probably confirming the co-existence of both the dopants. X-ray photoelectron spectroscopy spectra revealed that the chemical composition in N+P co-doped ZnO are different from that found in undoped, N-, and P- doped ZnO. The atomic ratio of N and P in N+P co-doped ZnO is higher than that in single N or P doped ZnO. One broad ZnO emission peak around 420 nm is observed in photoluminescence spectra. The relative intensity of the strongest peak obtained from co-doped ZnO films is about twice than the P- doped and thrice than the pure and N- doped films.

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