scholarly journals A Multi-Position Drum-Type Assembly for Simultaneous Film Deposition at Different Temperatures in a Single Sputter Cycle–Application to ITO Thin Films

Coatings ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 1076
Author(s):  
Akhmed K. Akhmedov ◽  
Abil S. Asvarov ◽  
Arsen E. Muslimov ◽  
Vladimir M. Kanevsky
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Film Deposition ◽  
Visible Range ◽  
Magnetron Deposition ◽  
Average Transmittance ◽  
Temperature Dependences ◽  
Different Temperatures ◽  
Ito Thin Films

The design of a multi-position drum-type assembly (MPDTA) for heating and positioning substrates with the possibility of individually setting and controlling the temperature of each substrate, which is applicable for laboratory-type sputtering setups, is described. The above design provides the possibility of the simultaneous deposition of thin films under identical conditions on several substrates at different temperatures, making it possible to explore the temperature dependences of the films’ morphology, structure, and functional characteristics in one single vacuum deposition cycle. As a case study, the possibility of investigating such dependencies for the magnetron deposition of transparent conducting indium–tin oxide (ITO) thin films was demonstrated using the MPDTA. The investigation results revealed that the functional performances of deposited ITO thin films (resistivity and average transmittance in the visible range) improved with increasing the substrate temperature, reaching values of 1.5 × 10−4 Ω·cm and over 80%, respectively, at 300 °C.

scholarly journals Effects of substrate temperature on the properties of the indium tin oxide thin films deposited by sputtering method

2018 ◽  
Vol 185 ◽  
pp. 00006
Author(s):  
Chia-Ching Wu ◽  
Chien-Chen Diao
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Deposition Temperature ◽  
Optical Transmittance ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Visible Range ◽  
Radio Frequency Sputtering ◽  
Ito Thin Films

High-quality transparent conductive indium tin oxide (ITO) thin films were deposited on glass substrates using radio frequency sputtering method. The structure and electrical and optical properties of the ITO thin films were mainly investigated. The ITO thin films showed strong diffraction peak having a preferred orientation along the [111] direction as the deposition temperature at 120 to 160 °C. In the transmission spectra, the optical transmittance increased in the visible range as the deposition temperature increased from RT to 160 °C. A minimum resistivity of 3.06×10-3 Ω-cm was obtained for the ITO thin film deposition at 160 °C.

scholarly journals Effect of Oxygen Flow Rate on Properties of Aluminum-Doped Indium-Saving Indium Tin Oxide (ITO) Thin Films Sputtered on Preheated Glass Substrates

Metals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1604
Author(s):  
Svitlana Petrovska ◽  
Ruslan Sergiienko ◽  
Bogdan Ilkiv ◽  
Takashi Nakamura ◽  
Makoto Ohtsuka
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Visible Range ◽  
Oxide Content ◽  
Glass Substrates ◽  
Ito Thin Films

Amorphous aluminum-doped indium tin oxide (ITO) thin films with a reduced indium oxide content of 50 mass% were manufactured by co-sputtering of ITO and Al2O3 targets in a mixed argon–oxygen atmosphere onto glass substrates preheated at 523 K. The oxygen gas flow rate and heat treatment temperature effects on the electrical, optical and structural properties of the films were studied. Thin films were characterized by means of a four-point probe, ultraviolet–visible-infrared (UV–Vis-IR) spectroscopy and X-ray diffraction. Transmittance of films and crystallization temperature increased as a result of doping of the ITO thin films by aluminum. The increase in oxygen flow rate led to an increase in transmittance and hindering of the crystallization of the aluminum-doped indium saving ITO thin films. It has been found that the film sputtered under optimal conditions showed a volume resistivity of 713 µΩcm, mobility of 30.8 cm2/V·s, carrier concentration of 2.9 × 1020 cm−3 and transmittance of over 90% in the visible range.

Influence of Annealing Atmosphere on the Characteristics of Sol-Gel Derived ITO Thin Films

2013 ◽  
Vol 684 ◽  
pp. 279-284 ◽  
Author(s):  
Yu Ming Peng ◽  
Yan Kuin Su ◽  
Ru Yuan Yang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Indium Tin Oxide ◽  
Sol Gel ◽  
Dip Coating ◽  
Visible Range ◽  
Annealing Atmosphere ◽  
Optical And Electrical Properties ◽  
Ito Thin Films ◽  
Ito Films

In this paper, the Indium Tin Oxide (ITO) thin films were prepared by a sol-gel dip coating method and then annealed at 600°C under different atmosphere (vacuum, N2 and 96.25%N2+3.75%H2). Their microstructure, optical and electrical properties were investigated and discussed. Suitable atmosphere can improve the crystalline of the ITO films, therefore the optical and electrical properties of the ITO films are improved. The uv-vis results showed the maximum of transmittance in the visible range (380-780 nm) of 85.6% and the lowest resistivity of 4.4×10-2 Ω-cm when the ITO films were annealed under 96.25% N2 with 3.75% H2 atmosphere.

Annealing effect on indium tin oxide thin films by DC magnetron sputtering for alkali vapor cell heating

2019 ◽  
Vol 33 (16) ◽  
pp. 1950178
Author(s):  
Jianhua Li ◽  
Zhiyuan Jiang ◽  
Pingwei Lin ◽  
Xinhua Chen ◽  
Lin Zhong ◽  
...  
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Annealing Effect ◽  
Vapor Cell ◽  
Glass Substrates ◽  
Ito Film ◽  
Different Temperatures ◽  
Ito Thin Films ◽  
Predominant Orientation ◽  
Ito Films

This paper reports the annealing effect on the DC sputter transparent conducting tin-doped indium oxide (ITO) films for the alkali vapor cell heater of the chip-scale atomic sensors. ITO films with a thickness of 140 nm were deposited on BF33 glass substrates at [Formula: see text], followed by an annealing process in N2 atmosphere for 2 h at different temperatures between [Formula: see text] and [Formula: see text]. The effect of annealing on the crystal structure, surface morphology, optical, and electrical properties of ITO films was characterized. The predominant orientation of crystal face of the as-deposited and annealed ITO thin films was (222) instead of (400). After annealing at [Formula: see text] the ITO film exhibits the highest transmittance ([Formula: see text][Formula: see text]90%) to the lights at the wavelength of 780 nm, 795 nm and 894 nm regarding the probe light in a chip scale atomic device. Besides, the lowest sheet resistance and resistivity were obtained as 27.8 [Formula: see text] and [Formula: see text] separately. The refractive index and extinction coefficients results verified the crystal orientation and the transmittance results. This thin ITO film was expected to be the best candidate for the transparent heater in the chip scale atomic devices.

Preparation and Physical Properties of ITO Thin Films by Spray Pyrolysis Method

2012 ◽  
Vol 465 ◽  
pp. 268-275 ◽  
Author(s):  
Yang Zhou ◽  
Guang Ming Wu ◽  
De Wen Gao ◽  
Guang Jian Xing ◽  
Yan Ying Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Spray Pyrolysis ◽  
Indium Tin Oxide ◽  
Visible Range ◽  
Spray Pyrolysis Method ◽  
Optimal Conditions ◽  
Photoelectric Properties ◽  
Ito Thin Films ◽  
Ito Films

Indium tin oxide (ITO) films were deposited on glass substrates by using the homemade spray pyrolysis system. Orthogonal test was designed to examine the optimal conditions for preparation of the ITO films. The results showed that the ITO thin films can be prepared by the homemade spray pyrolysis device successfully. The device is simple in structure and easy to use. The substrate temperature is the main factor on the photoelectric properties of the ITO films. The optimal conditions for preparing the ITO thin films were as following: the substrate temperature is 300oC, the carrier gas flow of the air was 1.5 L•min-1, the annealing temperature was 500oC, the proportion of the indium and tin was 10:1, the distance between substrate and nozzle was 8 cm, and the deposition time was 3.5 min. The average optical transmittance in the visible range and sheet resistance of the ITO film were 93% and 2786Ω/□, respectively.

scholarly journals Improving Performance of CIGS Solar Cells by Annealing ITO Thin Films Electrodes

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Chuan Lung Chuang ◽  
Ming Wei Chang ◽  
Nien Po Chen ◽  
Chung Chiang Pan ◽  
Chung Ping Liu
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Solar Cells ◽  
Indium Tin Oxide ◽  
Copper Indium Gallium Diselenide ◽  
Glass Substrates ◽  
Ito Film ◽  
Ito Thin Films ◽  
Cigs Solar Cells ◽  
Ito Films

Indium tin oxide (ITO) thin films were grown on glass substrates by direct current (DC) reactive magnetron sputtering at room temperature. Annealing at the optimal temperature can considerably improve the composition, structure, optical properties, and electrical properties of the ITO film. An ITO sample with a favorable crystalline structure was obtained by annealing in fixed oxygen/argon ratio of 0.03 at 400°C for 30 min. The carrier concentration, mobility, resistivity, band gap, transmission in the visible-light region, and transmission in the near-IR regions of the ITO sample were-1.6E+20 cm−3,2.7E+01 cm2/Vs,1.4E-03 Ohm-cm, 3.2 eV, 89.1%, and 94.7%, respectively. Thus, annealing improved the average transmissions (400–1200 nm) of the ITO film by 16.36%. Moreover, annealing a copper-indium-gallium-diselenide (CIGS) solar cell at 400°C for 30 min in air improved its efficiency by 18.75%. The characteristics of annealing ITO films importantly affect the structural, morphological, electrical, and optical properties of ITO films that are used in solar cells.

ITO Thin Films on Silicon Buffer by Sol Gel Method

2006 ◽  
Vol 514-516 ◽  
pp. 1155-1160 ◽  
Author(s):  
Talaat Moussa Hammad
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Optical Transmission ◽  
Sol Gel ◽  
Precursor Solution ◽  
Charge Carriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ito Thin Films ◽  
Uv Visible

Sol gel indium tin oxide thin films (In: Sn = 90:10) were prepared by the sol-gel dipcoating process on silicon buffer substrate. The precursor solution was prepared by mixing SnCl2.2H2O and InCl3 dissolved in ethanol and acetic acid. The crystalline structure and grain orientation of ITO films were determined by X-ray diffraction. The surface morphology of the films was characterized by scanning electron microscope (SEM). Optical transmission and reflectance spectra of the films were analyzed by using a UV-visible spectrophotometer. The transport properties of majority charge carriers for these films were studied by Hall measurement. ITO thin film with electrical resistivity of 7.6 ×10-3 3.cm, Hall mobility of approximately 2 cm2(Vs)-1 and free carrier concentration of approximately 4.2 ×1020 cm-3 are obtained for films 100 nm thick films. The I-V curve measurement showed typical I-V characteristic behavior of sol gel ITO thin films.

Near Infrared Photothermoelectric Effect in Transparent AZO/ITO/Ag/ITO Thin Films

2021 ◽  
Author(s):  
Catarina Bianchi ◽  
Ana Marques ◽  
Rui Silva ◽  
Tomas Calmeiro ◽  
Isabel Ferreira
Keyword(s):  
Indium Tin Oxide ◽  
Near Infrared ◽  
Thermal Control ◽  
High Energy ◽  
Visible Range ◽  
Azo Thin Film ◽  
Ito Thin Films ◽  
Aluminum Doped Zinc Oxide ◽  
Temperature Constant ◽  
20 Nm

Abstract A new concept of oxide-metal-oxide structures that combine photothermoelectric effect with high reflectance (~80%) at wavelengths in the infrared (> 1100 nm) and high transmittance in the visible range is reported here. This was observed in optimized ITO/Ag/ITO structure, 20 nm of Siver (Ag) and 40 nm of Indium Tin Oxide (ITO), deposited on Aluminum doped Zinc Oxide (AZO) thin film. These layers show high energy saving efficiency by keeping the temperature constant inside a glazed compartment under solar radiation, but additionally they also show a photothermoelectric effect. Under uniform heating of the sample a thermoelectric effect is observed (S = 40 μV/K), but when irradiated, a potential proportional to the intensity of the radiation is also observed. Therefore, in addition to thermal control in windows, these low emission coatings can be applied as transparent photothermoelectric devices.

Multi-Component ZnO-In2O3-SnO2Thin Films Deposited by RF Magnetron Co-Sputtering

2007 ◽  
Vol 124-126 ◽  
pp. 119-122 ◽  
Author(s):  
Chang Sik Son ◽  
Jae Sung Hur ◽  
Byoung Hoon Lee ◽  
Sang Yul Back ◽  
Jeong Seop Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Visible Range ◽  
Rf Power ◽  
Working Pressure ◽  
Average Transmittance ◽  
Sno2 Thin Films ◽  
Ar Gas ◽  
Sputtering System ◽  
High Chemical Stability

Multi-component ZnO-In2O3-SnO2 thin films have been prepared by RF magnetron co-sputtering using targets composed of In4Sn3O12(99.99%) [1] and ZnO(99.99%) at room temperature. In4Sn3O12 contains less In than commercial ITO, so that it lowers cost. Working pressure was held at 3 mtorr flowing Ar gas 20 sccm and sputtering time was 30 min. RF power ratio [RF1 / ( RF1 + RF2 )] of two guns in sputtering system was varied from 0 to 1. Each RF power was varied 0~100W respectively. The thicknesses of the films were 350~650nm. The composition concentrations of the each film were measured with EPMA and AES. The low resistivity of 1-2 × 10-3 and an average transmittance above 80% in the visible range were attained for the films over a range of δ (0.3 ≤ δ ≤ 0.5). The films also showed a high chemical stability with time and a good uniformity.

scholarly journals Different electrode anodes used in OLED devices Diferentes eletrodos anodos usados em dispositivos OLEDs

2021 ◽  
Author(s):  
Emerson Roberto Santos ◽  
Thiago de Carvalho Fullenbach ◽  
Marina Sparvoli Medeiros ◽  
Luis da Silva Zambom ◽  
Roberto Koji Onmori ◽  
...  
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Threshold Voltage ◽  
Indium Tin Oxide ◽  
Light Emitting Diode ◽  
Electrical Current ◽  
High Threshold ◽  
Diamond Coatings ◽  
Ito Thin Films ◽  
Order Of Magnitude

Transparent conductive oxides (TCOs) known as indium tin oxide (ITO) and fluorine tin oxide (FTO) deposited on glass were compared by different techniques and also as anodes in organic light-emitting diode (OLED) devices with same structure. ITO produced at laboratory was compared with the commercial one manufactured by different companies: Diamond Coatings, Displaytech and Sigma-Aldrich, and FTO produced at laboratory was compared with the commercial one manufactured by Flexitec Company. FTO thin films produced at laboratory presented the lowest performance measured by Hall effect technique and also by I-V curve of OLED device with low electrical current and high threshold voltage. ITO thin films produced at laboratory presented elevated sheet resistance in comparison with commercial ITOs (approximately one order of magnitude greater), that can be related by a high number of defects as discontinuity of the chemical lattice or low crystalline structure. In the assembly of OLED devices with ITO and FTO produced at laboratory, neither presented luminances. ITO manufactured by Sigma-Aldrich company presented better electrical and optical characteristics, as low electrical resistivity, good wettability, favorable transmittance, perfect physicalchemical stability and lowest threshold voltage (from 3 to 4.5 V) for OLED devices.

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